Power electronics

Students: Rafael Baruch Hernandez Guerra

Dagoberto Sánchez González
ID:
149172
148497
Date: 02 de marzo de 2018
Title:
Pulse generator applied in a MOSFET

Objectives
● Generate pulses with a device that creates a frequency of 25kHz and a
Duty Cycle around 50%.
● Understand the operation of the mosfet switching.
● Get it in resistance 1 A.

Summary
In the following document we wrote how to create a pulse generator capable of
reaching a frequency of 25KHz and a duty cycle of 50% with a 555 timer. This
pulse generator is connected to a MOSFET to create a switch with pulses of 5V
amplitude. The main objective is that with the aforementioned requirements we
achieve one ampere in the resistance.

Introduction
MOSFET stands for metal-oxide semiconductor field-effect transistor. It is a
special type of field-effect transistor (FET). Unlike BJT which is ‘current
controlled’, the MOSFET is a voltage controlled device. The MOSFET has “gate“,
“Drain” and “Source” terminals instead of a “base”, “collector”, and “emitter”
terminals in a bipolar transistor. By applying voltage at the gate, it generates an
electrical field to control the current flow through the channel between drain and
source, and there is no current flow from the gate into the MOSFET.

A MOSFET may be thought of as a variable resistor, where the Gate-Source

voltage difference can control the Drain-Source Resistance. When there is no
applying voltage between the Gate-Source , the Drain-Source resistance is very
high, which is almost like a open circuit, so no current may flow through the
Drain-Source. When Gate-Source potential difference is applied, the Drain-
Source resistance is reduced, and there will be current flowing through Drain-
Source, which is now a closed circuit.

A MOSFET is controlled by the Gate-Source voltage applied (which regulates the

electrical field across a channel), like pinching or opening a straw and stopping or
allowing current flowing. Because of this property, FETs are great for large

current flow, and the MOSFET is commonly used as a switch.

Figure 1. MOSFET switch off.

To use a MOSFET as a switch, you have to have its gate voltage (Vgs) higher
than the source. If you connect the gate to the source (Vgs=0) it is turned off.

Figure 2. MOSFET switch on.

MOSFETs come in four different types. There are three main categories we need
to know.
● N-Channel (NMOS) or P-Channel (PMOS)
● Enhancement or Depletion mode
● Logic-Level or Normal MOSFET

N-Channel: For an N-Channel MOSFET, the source is connected to ground. To

turn the MOSFET on, we need to raise the voltage on the gate. To turn it off we
need to connect the gate to ground. P-Channel: The source is connected to the
power rail (Vcc). In order to allow current to flow the Gate needs to be pulled to
ground. To turn it off the gate needs to be pulled to Vcc.
Depletion Mode: It requires the Gate-Source voltage ( Vgs ) applied to switch the
device “OFF”. Enhancement Mode: The transistor requires a Gate-Source
voltage ( Vgs ) applied to switch the device “ON”.

The 555 timer is capable of being used in astable and monostable circuits. In an
astable circuit, the output voltage alternates between VCC and 0 volts on a
continual basis.

Figure 3. Period, time high and time low of a signal.

We used an astable circuit shown in figure 4, by selecting values for R1, R2 and
C we can determine the period/frequency and the duty cycle. The period is the
length of time it takes for the on/off cycle to repeat itself, whilst the duty cycle is
the percentage of time the input is on.

Figure 4. Astable circuit for the 555 timer.

With this circuit, if we increase the capacitor will increase the cycle time and
hence reduce the frequency, if we increase R1 will increase time high and will
leave the time low unaffected and if we increase R2 will increase time high and
increase time low and decrease the duty cycle.
Mathematical analysis
We used a function generator with an square signal and the values of the
resistors and capacitors was decided by the help of a internet calculator for the
Timer 555, which suggested to use a C1 = 0.001 uF, an R1 = 3.3 KΩ and an R2
= 27 KΩ, this configuration gave us a period of 51%, followed by the connection
of the circuit. The configuration that was used to generate the desired signal, was
correct, and the result we obtained between the input signal, which comes from
the function generator and the output signal, and shows us the comparison
between Gate-Source and Source to Drain of the MOSFET, so the output signal
between Drain and Source is the inverse to the input signal that was our
objective and the ampere that our circuit consumes of 0.98 A.

Results obtained

Figure 5.Final circuit.

Figure 6. Vds and Vgs

 Figure 7. Ampere on the resistance

Conclusion
With the use of a MOSFET, power diodes and designing pulse generators, we
conclude that the obtained results are the ones we were waiting for, because the
previous analysis for the values of the circuit elements like the Timer LM555.
MOSFET, resistors and capacitors. The obtained results of the signal in the
Gate-Source and Source to Drain was correct for the expected frequency and
duty cycle to achieve the flow of the current through the resistor from the voltage
yields.

Bibliography
Erickson, R. W., & Maksimovic, D. (2007). Fundamentals of power electronics.
Springer Science & Business Media.

Hoffmann, K. F., & Karst, J. P. (2005, September). High frequency power switch-
improved performance by MOSFETs and IGBTs connected in parallel. In Power
Electronics and Applications, 2005 European Conference on (pp. 11-pp). IEEE.

Hart, D. W. (2011). Power electronics. Tata McGraw-Hill Education.