Escolar Documentos
Profissional Documentos
Cultura Documentos
Kanazawa University
Microelectronics Research Lab.
Akio Kitagawa
0. Introduction
2
Growing information technology toward
a real world and an daily life
Keywords: Wireless, Battery-less, Sensor integration.
An analog mixed signal (AMS) LSI is fundamental to advanced electronic systems.
Regional Information
Disaster
prevention
Distribution
Intelligent system
transport systems
Maintenance of Nursing-care
buildings
Cultivation Information in a virtual reality
Environment
conservation
Medical services
Home safety and
automation Health care
3
Information in a real world and an actual life
Stage of circuit design
Analog Digital
Function
Transfer function Block diagram
Verilog-A Verilog-D
①
Circuit Analog circuit Logic circuit
(Element circuit) (Logic gate)
Circuit Element
Analog circuit Digital circuit
② (Transistor circuit) (Transistor circuit)
7
History of analog mixed signal
LSI development
Bio-sensor, Battery-less
Emerging Devices,
Analog Functions
ISDN MODEM
Over Sampling
Mobile Phone
SCF MODEM
CMOS RF
Bipolar ICs
Base band
741 OPA (1996)
SPICE (1973)
• Analog implementation
– There are some functions which can not implement in the digital circuit.
• High frequency
• High sensitivity
• Continuous time processing
• Ultra low power
• Sensor integration
– System performance is influenced by the insertion point of the analog-
to-digital converter (ADC) and digital-to-analog converter (DAC).
– The accuracy of analog circuits can enhanced by digital compensation
technique. 12
Wave forms in mixed signal circuits
Continuous time Discrete time
value DSM
(Pulse width, Delay time)
13
DSM: Delta-Sigma Modulation
Overview of analog design flow
Block diagram of system architecture Specification sheet for analog block
PHS PHS 規格値 設計値
DAC Wave DBP 項目 条件 単位
RFU IFU Min. Typ. Max. Min. Typ. Max.
Form I/F 電源電圧 1.8 3.3 3.5 1.8 2.1 3.3 V
GEN 消費電流 ― ― 2.2 mA
User 利得 ― 15 ― dB
Quad DSP
Mode ADC 周波数 300 426 475
Damed I/F 雑音指数(NF) ― 2 ― dB
IFU
1dBコンプレッションレベル ― 0 ― dBm
GPS GPS CLK GPS インタセプトポイント(IIP3) ― 9.6 ― dB
ADC 入力インピーダンス ― 50 ― Ω
RFU IFU GEN I/F
出力インピーダンス ― 500 ― Ω
端子間アイソレーション(OUT→IN) 20 dB
ETC ETC GPS PHS
RFU IFU Correrator I/F
M15
5/2
M14
M5 M6
5/2 M8 M9
5/2 5/2
5/2 Vbias 5/2
M3 M4
10.24/2 10.24/2
3.5kΩ 0.5pF 0.5pF
Vout- Vin+ M1 M2 Vin- Vout+
8.56/2 8.56/2
M16
8/2 M10 M7 M11
8/2 8/2 8/2
14
5/2 5/2 5/2 5/2
Vcm
gnd
Choice of Process technology
• CMOS (MOSFET)
– Current driving ability is rather low.
– High speed (SOI-CMOS is better for very high speed circuits)
– In the case of integration with large scale digital circuits, there is not
the choice else.
• Bipolar
– Current driving ability is high (good characteristic for power
amplifiers)
– SiGe HBT (Hetero Bipolar Transistor) can perform in high frequency.
• HEMT (High Electron Mobility Transistor)
– Very low noise (good characteristic for low noise amplifiers)
– Very high speed
15
Application Spectrum
GaAs MHEMT
InP HBT, HEMT
SiGe HBT, BiCMOS
Si RF-CMOS GaAs HBT, HEMT
contact L Weff
tOX WB
n-Si n-Si
p-Si
SiO2 p-Si n-Si
n-Si substrate
Bipolar
180nm
250nm
CMOS Amp., Mixer (20dB)
10
350nm
WLAN 802.11a
CMOS ADC, Small Digital
CDMA
1
Cellular Peak Transition Frequency:
The frequency for the current gain h21 = 1 (0dB)
of the transistor.
0.1
1996 2000 2004 2008 2012 2016 2020
1G
Sampling Frequency (Hz)
HDD DVD
Digital TV
100M Digital IF
VDSL
Flash Digital Camera
10M LAN
ADC Pipeline ADC
ADSL
1M
Motor Servo GSM, PDC
100k
SAR ADC Σ-Δ ADC
10k CD/MD
Celluar Phone
1k
4 6 8 10 12 14 16 18 20 22 24
Resolution (bit) 19
Advantages and disadvantages of
technology scaling
1
Integration 2
L
Performance (Log)
1
Speed 1.5 (Constant ID)
L
Signal Swing
Dynamic Range
Noise Mismatch
Scaling
1/(Design Rule) (Log)
20
Figure of merit (FOM) of analog
circuits
• Before ITRS2004 edition: G IIP3 f
FOM LNA
FOM was defined for each category ( NF 1) P
2
of circuits. f0 1
FOM VCO
– LNA: Low noise amplifier f L{f } P
– VCO: Voltage controlled
oscillator FOMPA Pout Gp PAE f 2
– PA: Power amplifier
(2 ENOB0 ) f S
– ADC: Analog-to-Digital FOM ADC
converter P
P : Power consumption
• After ITRS2005 edition: IIP3: Third Order Input Intercept Point
NF : Noise figure
fT, fmax, NFmin, s(VT) is a successor of L: Spurious power
the FOM of analog circuit trend, PAE: Power efficiency
ENOB0: Effective number of bits
fS : Sampling frequency
21
Quiz: Speed = Accuracy = Gain?
Effective Number of Bits for Oversampling ADC
M
SNRmax [dB] 6.02 N 1.76 20 log[ ] (20 M 10) log OSR
2 M 1
fS Sampling frequency fS
OSR
2 f0
Maximum frequency of signal fo
1(bit ) 6.02(dB)