Intrinsic & Doped-

Doped-
Semiconductor

Instructor : Prof. Dr. Ir. Djoko Hartanto,

Hartanto, M.Sc.
: Arief Udhiarto
Udhiarto,, S.T,
ST M M.T
T
: Dr. Ratno Nuryadi,
Nuryadi, M. Eng.
Eng.
Source : Professor Nathan Cheung, U.C. Berkeley
 Si crystal

Covalent bond

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 Electric Field
Electric field
Electric field
hole

electron
hole

time electron

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Influence of thermal energy on Si crystal

electron

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 Carrier Concentrations of Pure
((“intrinsic”)
intrinsic ) Semiconductor
z For each electron in the
conduction band (i.e. an
occupied state in CB),
there must be a hole in
the valence band (i.e.
unoccupied state in VB)
Therefore n= p which can
defined as an intrinsic
concentration ni

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Intrinsic Carrier Concentration
versus Temperature

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Fermi Energy (Ei) of Intrinsic
Semiconductor

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 Doping
z By substituting a Si atom with a special impurity atom
(C l
(Column V or Column
C l III element),
l t) a conduction
d ti electron
l t
or hole is created.

Dopant concentrations typically range from 1014 cm-3 to 1020 cm-3

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 Phospor--doped Si
Phospor

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 Energy Band
Conduction band
Energy gap
Valence band

electron
Ionized donor
CB

Neutral donor Donor level

VB

electron Electric field

hole
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 Boron--doped Si
Boron

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 Energy Band

CB

EG
VB

CB
neutral
acceptor Ionized acceptor
Acceptor
p level

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CB
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Electric field
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Energy Band Description of Electrons and Holes
Contributed byy Donors and Acceptors
p

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Charge Neutrality Condition

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 Charge neutrality relationship

The net charge in a small portion of a uniformly doped

semiconductor should be zero
zero. Otherwise
Otherwise, there will be a net flow of
charge from one point to another resulting in current flow (that is
against out assumption of thermal equilibrium).
Charge/cm3 = q p – q n + q ND+ − q NA − = 0 or
p – n + ND+ − NA− = 0
where ND+ = # of ionized donors/cm3 and NA − = # of ionized
acceptors per cm3.
Assuming total ionization of dopants, we can write:

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 Carrier concentration calculations

Assume a non-degenerately doped semiconductor and assume total ionization of

dopants Then,
dopants. Then

n p = ni2 ; electron concentration × hole concentration = ni2

p − n + ND − NA = 0; net charge in a given volume is zero.

We get:
g
(ni2 / n) − n + ND − NA = 0
n2 − n (ND − NA) − ni2 = 0

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 Special cases
z Intrinsic semiconductor:
ND= 0 and NA = 0 → p = n = ni

z Doped semiconductors where | ND − NA | >> ni

n = ND − NA ; p = ni2 / n if ND > NA
p = NA − ND ; n = ni2 / p if NA > ND
z Compensated semiconductor

n = p = ni when ni >> | ND − NA |

When | ND − NA | is comparable to ni,, we need to use the charge neutrality

equation to determine n and p.

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Dependence of Fermi Level with Doping
Concentration

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Majority-carrier temperature-dependence

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 Equations to remember

Note: Our interest was in determining n and p. Free carriers strongly influence
the properties of semiconductors.

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