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I. INTRODUCTION
Gordon Moore in 1965 stated that the number of transistors
per unit area had doubled approximately every two years. For
40 years Moore’s law served as guiding principle. After
downscaling the MOSFET for 40 years, we now finally able
reduce the chip size, thereby increasing the number of
transistors and also the computing speed.
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Fig. 6. transconductance of the GAA-TFET is for the channel Fig. 8.Transconductance of the GAA-TFET is for the channel
length 30nm with a diameter variation of 9nm and 10nm is length 50nm with a diameter variation of 9nm and 10nm is
increased. increased.
IV. CONCLUSION
REFERENCES
Fig. 7. transconductance of the GAA-TFET is for the channel
[1] R.S. Muller, T.I. Kamins, and M. Chan, “Device Electronics for
length 40nm with a diameter variation of 9nm and 10nm is Integrated Circuits,” New York, NY, USA: Wiley, pp. 443–445, 2003.
increased. [2] J. Appenzeller, Y. M. Lin, J. Knoch and P. Avouris, “Band-to-Band
Tunneling in Carbon Nanotube Field-Effect Transistors,” Phy. Rev. Lett,
vol. 93, pp. 196805, 2004.
[3] S.O. Koswatta, M.S. Lundstrom and D.E. Nikonov, “Performance
comparison between p-i-n tunneling transistors and conventional
MOSFETs,” IEEE transactions on Electronic Device, vol. 56, pp.
456-465, 2009.
[4] Ajith Ravindran*a, Abraham Georgeb, Praveen C Sc, Nisha Kuruvillac
,“Gate All Around Nanowire TFET with High ON/OFF Current
Ratio”,ScienceDirect Materials Today: Proceedings 4 (2017) 10637–
10642
[5] Sidhartha Dasha, Girija Shankar Sahoob, Guru Prasad Mishrab*,
“Improved cut-off frequency for cylindrical gate TFET using source
delta doping”, Global Colloquium in Recent Advancement and Effectual
Researches in Engineering, Science and Technology (RAEREST 2016)
[6] Jong-Wook Lee, “Improvement of On-State Current of Tunnel
FET(Field-Effect Transistor) by Design of Channel Doping Profile”,
International Journal of Applied Engineering Research ISSN 0973-4562
Volume 11, Number 13 (2016) pp 8019-8023
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