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ON Semiconductor

General Purpose Transistor


NPN Silicon MPS3904

MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 40 Vdc
Collector–Base Voltage VCBO 60 Vdc
Emitter–Base Voltage VEBO 6.0 Vdc 1
2
3
Collector Current — Continuous IC 100 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW CASE 29–04, STYLE 1
Derate above 25°C 5.0 mW/°C TO–92 (TO–226AA)
Total Power Dissipation @ TA = 60°C PD 450 mW
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C COLLECTOR
Operating and Storage Junction TJ, Tstg –55 to +150 °C 3
Temperature Range
2
THERMAL CHARACTERISTICS
BASE
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 200 °C/W 1
Thermal Resistance, Junction to Case RJC 83.3 °C/W EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)


Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1) V(BR)CEO 40 — Vdc
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage V(BR)CBO 60 — Vdc
(IC = 10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 6.0 — Vdc
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current ICEX — 50 nAdc
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)
Base Cutoff Current IBL — 50 nAdc
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:


November, 2001 – Rev. 3 MPS3904/D
MPS3904

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)


Characteristic Symbol Min Max Unit

ON CHARACTERISTICS(1)
DC Current Gain hFE —
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 —
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 —
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 —
(IC = 100 mAdc, VCE = 1.0 Vdc) 30 —
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) — 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.3
Base–Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) — 1.1

SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product fT 300 — MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance Cobo — 4.0 pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — 8.0 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie 1.0 10 kΩ
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio hre 0.5 8.0 X 10–4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain hfe 100 400 —
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance hoe 1.0 40 µmhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure NF — 5.0 dB
(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE(off) = –0.5
0.5 Vdc, td — 35 ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr — 50 ns
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, ts — 900 ns
Fall Time IB1 = IB2 = 1.0 mAdc) tf — 90 ns

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

EQUIVALENT SWITCHING TIME TEST CIRCUITS

+3.0 V +3.0 V
10 < t1 < 500 µs t1
300 ns 275 +10.9 V 275
+10.9 V DUTY CYCLE = 2%
DUTY CYCLE = 2%
10 k 10 k
-0.5 V 0
<1.0 ns CS < 4.0 pF* CS < 4.0 pF*
-9.1 V 1N916
<1.0 ns

*Total shunt capacitance of test jig and connectors

Figure 1. Turn–On Time Figure 2. Turn–Off Time

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MPS3904

TYPICAL NOISE CHARACTERISTICS


(VCE = 5.0 Vdc, TA = 25°C)

20 100
IC = 1.0 mA BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
50
RS = 0 IC = 1.0 mA RS ≈ ∞
300 µA 20 300 µA
en, NOISE VOLTAGE (nV)

In, NOISE CURRENT (pA)


10
10 100 µA

7.0 5.0
100 µA
2.0
5.0
1.0
10 µA
30 µA 0.5 30 µA
3.0
0.2 10 µA

2.0 0.1
10 20 50 100 200 500 1k 2k 5k 10k 10 20 50 100 200 500 1k 2k 5k 10k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)

Figure 3. Noise Voltage Figure 4. Noise Current

NOISE FIGURE CONTOURS


(VCE = 5.0 Vdc, TA = 25°C)
500k 1M
200k BANDWIDTH = 1.0 Hz 500k BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

100k 200k
50k 100k
20k 50k
10k 20k
5k 10k
2.0 dB 1.0 dB
2k 5k
3.0 dB 4.0 dB
1k 2k 2.0 dB
6.0 dB 3.0 dB
500 10 dB
1k
500 5.0 dB
200
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
IC, COLLECTOR CURRENT (µA) IC, COLLECTOR CURRENT (µA)

Figure 5. Narrow Band, 100 Hz Figure 6. Narrow Band, 1.0 kHz

500k
10 Hz to 15.7 kHz
200k
RS , SOURCE RESISTANCE (OHMS)

100k
50k
Noise Figure is defined as:
20k
10k NF  20 log10 en2  4KTR S  In RS 
4KTRS
2 2 12

5k 1.0 dB
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
2k 2.0 dB In = Noise Current of the Transistor referred to the input. (Figure 4)
1k 3.0 dB K = Boltzman’s Constant (1.38 x 10–23 j/°K)
500 T = Temperature of the Source Resistance (°K)
5.0 dB
200 RS = Source Resistance (Ohms)
8.0 dB
100
50
10 20 30 50 70 100 200 300 500 700 1k
IC, COLLECTOR CURRENT (µA)

Figure 7. Wideband

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MPS3904

TYPICAL STATIC CHARACTERISTICS

400
TJ = 125°C
h FE, DC CURRENT GAIN

200 25°C

-55°C
100
80
MPS3904
60 VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

1.0 100
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

MPS3904 TA = 25°C
IB = 500 µA
TJ = 25°C PULSE WIDTH = 300 µs
IC, COLLECTOR CURRENT (mA)

0.8 80 DUTY CYCLE ≤ 2.0% 400 µA

IC = 1.0 mA 10 mA 50 mA 100 mA 300 µA


0.6 60

200 µA
0.4 40

100 µA
0.2 20

0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
IB, BASE CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 9. Collector Saturation Region Figure 10. Collector Characteristics

1.4 1.6
*APPLIES for IC/IB ≤ hFE/2
θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C
1.2
0.8
25°C to 125°C
V, VOLTAGE (VOLTS)

1.0
*VC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 -55°C to 25°C

0.6 -0.8
VBE(on) @ VCE = 1.0 V
0.4 25°C to 125°C
-1.6
0.2 VB for VBE -55°C to 25°C
VCE(sat) @ IC/IB = 10
0 -2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages Figure 12. Temperature Coefficients

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MPS3904

TYPICAL DYNAMIC CHARACTERISTICS

300 1000
200 VCC = 3.0 V
700
IC/IB = 10 500
TJ = 25°C ts
100 300
70 200
50
t, TIME (ns)

t, TIME (ns)
30 tr 100 tf
20 70
td @ VBE(off) = 0.5 Vdc 50
10 30 VCC = 3.0 V
7.0 IC/IB = 10
20 IB1 = IB2
5.0
TJ = 25°C
3.0 10
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 13. Turn–On Time Figure 14. Turn–Off Time


T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

500 10
TJ = 25°C TJ = 25°C
f = 100 MHz 7.0 f = 1.0 MHz
300
VCE = 20 V Cib
5.0
C, CAPACITANCE (pF)

200 5.0 V
Cob
3.0

100 2.0

70

50 1.0
f,

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Current–Gain — Bandwidth Product Figure 16. Capacitance

20 200
VCE = 10 Vdc VCE = 10 Vdc
hoe, OUTPUT ADMITTANCE ( mhos)

10 f = 1.0 kHz 100 f = 1.0 kHz


MPS3904
TA = 25°C TA = 25°C
hie , INPUT IMPEDANCE (k Ω )

7.0 hfe ≈ 200 @ IC = 1.0 mA 70


5.0 50 MPS3904
3.0 30 hfe ≈ 200 @ IC = 1.0 mA
2.0 20

1.0 10
0.7 7.0
0.5 5.0
0.3 3.0
0.2 2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 17. Input Impedance Figure 18. Output Admittance

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MPS3904

1.0
r(t) TRANSIENT THERMAL RESISTANCE 0.7
D = 0.5
0.5

0.3
0.2
0.2
(NORMALIZED)

0.1
0.1
FIGURE 20
0.07 0.05 DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
0.05 P(pk) PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
0.02 ZJA(t) = r(t)  RJA
0.03 t1
TJ(pk) – TA = P(pk) ZJA(t)

0.02 0.01
SINGLE PULSE t2

0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
t, TIME (ms)

Figure 19. Thermal Response

104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA


VCC = 30 Vdc
103 A train of periodical power pulses can be represented by
IC, COLLECTOR CURRENT (nA)

the model as shown in Figure 20. Using the model and the
102 ICEO device thermal response the normalized effective transient
thermal resistance of Figure 19 was calculated for various
101 duty cycles.
To find ZθJA(t), multiply the value obtained from Figure
100 ICBO 19 by the steady state value RθJA.
AND Example:
ICEX @ VBE(off) = 3.0 Vdc
10-1 The MPS3904 is dissipating 2.0 watts peak under the follow-
ing conditions:
10-2 t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
-40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
TJ, JUNCTION TEMPERATURE (°C) reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
Figure 21.
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Applica-
tion Note AN569/D, available from the Literature Distribu-
tion Center or on our website at www.onsemi.com.

400
100 µs
The safe operating area curves indicate IC–VCE limits
1.0 ms of the transistor that must be observed for reliable operation.
200
IC, COLLECTOR CURRENT (mA)

10 µs Collector load lines for specific circuits must fall below the
100 TC = 25°C 1.0 s limits indicated by the applicable curve.
dc The data of Figure 22 is based upon TJ(pk) = 150°C; TC or
60 TA = 25°C TA is variable depending upon conditions. Pulse curves are
40 dc
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
20 TJ = 150°C may be calculated from the data in Figure 19. At high case
or ambient temperatures, thermal limitations will reduce the
10 CURRENT LIMIT power that can be handled to values less than the limitations
THERMAL LIMIT imposed by second breakdown.
6.0
SECOND BREAKDOWN LIMIT
4.0
2.0 4.0 6.0 8.0 10 20 40
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 22.

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MPS3904

PACKAGE DIMENSIONS

CASE 029–04
(TO–226AA)
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A Y14.5M, 1982.
B 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
1 N P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
N V 0.135 --- 3.43 ---

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

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MPS3904

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