How does a MOSFET work?

a) Draw a n-channel MOSFET. Explain how it works.

Applying a voltage between the gate and the body

(VG) will change the charge density of free
electrons at the oxide-semiconductor-interface.
Thus a thin conducting channel between the
Source and Drain contact is formed, this way VG
can modulate the conductivity.

The Gate contact is isolated from the conduction

channel by a thin oxide layer; Source and Drain
have ohmic contacts. Indicated in red there is also
a heavy doped p+ region between the Bulk contact
and the substrate.

If a bias is applied between Source and Drain, a current will flow in the active channel. The current is
determined by free charge carriers and hence by VG.

b) How are the contacts made at the source, drain, gate, and body?
• For an n-channel MOSFET a p-type Si wafer is needed. The wafer is a single crystal with a
(100) surface.
• The orientation of the silicon is important for the second step where the cleaned wafer gets
an oxide layer (SiO2). This layer will work as the Gate oxide, the quality of this layer is very
important.
• On top of the oxide, the Gate (a conductor) is deposited. The Gate defines the distance
between the Source and the Drain, it is also used as a mask for etching away the silicon oxide
to implement the Source and Drain contacts.
• For making n+ regions at Source and Drain donors are implemented. (f.e. P) After the
implementation, an annealing step is done to heal damages done by the implantation and to
make the n+ regions diffuse partially underneath the Gate (self-aligned process).

c) Draw the depletion regions and the electric fields.

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d) Draw the charge density in the channel when the saturation voltage is applied.

e) How would you calculate the drain current?

In the saturation regime the MOSFET acts as a current source (ID) controlled by the applied voltage
(VGS).

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f) What are short channel effects?

In very small devices, the transistor characteristics are destroyed due to the decreased channel
length. The Source to Drain depletion area can become a significant part of the channel length and
the Gate voltage does not control the charge in those regions anymore. Also, there is a Threshold-
voltage shift, a lack of pinch-off, an increased leakage current and an increased output conductance.

One solution is to use a thinner semiconductor, so the electric field lines in a very small device will
look more like the ones in a bigger device.

g) For which applications are MOSFETs used? Why?

Switch for signal processing, in memories or microprocessors. They are fast and have low power
dissipation.