SM7506NF/SM7506NFP ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

• 75V/170A**,
RDS(ON)= 4.3mΩ(max.) @ VGS= 10V
• Reliable and Rugged S S
D D
• Lead Free and Green Devices Available G G
(RoHS Compliant) Top View of TO-220 Top View of TO-220-FP

Applications
G
• Synchronous Rectification.
• Power Management in Inverter Systems.

N-Channel MOSFET

Ordering and Marking Information

SM7506N Package Code

F : TO-220 FP : TO-220-FP
Assembly Material Operating Junction Temperature Range
Handling Code C : -55 to 175 oC
Handling Code
Temperature Range TU : Tube
Assembly Material
Package Code G : Halogen and Lead Free Device

SM7506N F/FP : SM7506N XXXXX - Date Code

XXXXX

Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. A.4 - August, 2012
SM7506NF/SM7506NFP ®

Absolute Maximum Ratings

Symbol Parameter Rating Unit
Common Ratings (TA =25°C Unless Otherwise Noted)
V DSS Drain-Source Voltage 75
V
V GSS Gate-Source Voltage ±25
TJ Maximum Junction Temperature 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Diode Continuous Forward Current TC =25°C 80 A
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested TC =25°C 480* A
TC =25°C 170**
ID Continuous Drain Current(Silicon Limited) A
TC =100°C 130**
TC =25°C 120
ID Continuous Drain Current(Wire Bond Limited) A
TC =100°C 120
TC =25°C 300
PD Maximum Power Dissipation W
TC =100°C 150
R θJC Thermal Resistance-Junction to Case 0.5
°C/W
RθJA Thermal Resistance-Junction to Ambient 62.5
E AS Avalanche Energy, Single Pulsed L=1mH 1.3 J
Note：* Pulse width limited by safe operating area.
** Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation
current is 120A.

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

SM7506NF/NFP
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 75 - - V
ΔBVDSS /ΔTJ Breakdown Voltage Temp. Coefficient VGS=0V, IDS=250µA - 0.07 - V/°C
VDS=60V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2 3 4 V
IGSS Gate Leakage Current VGS=±25V, V DS=0V - - ±100 nA
a
RDS(ON) Drain-Source On-state Resistance VGS=10V, I DS=40A - 3.5 4.3 mΩ

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Rev. A.4 - August, 2012
SM7506NF/SM7506NFP ®

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

SM7506NF/NFP
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Diode Characteristics
VSDa Diode Forward Voltage ISD =20A, VGS=0V - 0.8 1.1 V
t rr Reverse Recovery Time - 75 - ns
IDS=40A, dlSD /dt=100A/µs
Q rr Reverse Recovery Charge - 160 - nC
b
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS =0V,F=1MHz - 1.5 - Ω
Ciss Input Capacitance - 3200 4200
VGS=0V,
C oss Output Capacitance VDS =30V, - 1100 - pF
Frequency=1.0MHz
C rss Reverse Transfer Capacitance - 450 -
td(ON) Turn-on Delay Time - 20 36
Tr Turn-on Rise Time VDD =30V, RL =30Ω, - 25 45
IDS=1A, V GEN=10V, ns
td(OFF) Turn-off Delay Time R G=6Ω - 72 130
Tf Turn-off Fall Time - 85 153
b
Gate Charge Characteristics
Qg Total Gate Charge - 100 150
VDS =30V, VGS =10V,
Q gs Gate-Source Charge - 19 - nC
IDS=40A
Qgd Gate-Drain Charge - 30 -
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.

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Rev. A.4 - August, 2012
SM7506NF/SM7506NFP ®

Typical Operating Characteristics

Power Dissipation Drain Current

350 140

300 120

250 100

ID - Drain Current (A)

Ptot - Power (W)

200 80

150 60

100 40

50 20
o o
T C=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

1000 3
Normalized Transient Thermal Resistance

1
Duty = 0.5
it
im

10ms
L

100
n)

0.2
s(o

100ms
ID - Drain Current (A)

Rd

0.1
0.1 0.05
1s
10
0.02
DC
0.01
0.01
1

Single Pulse
Mounted on minimum pad
o o
TC=25 C RθJA : 62.5 C/W
0.1 1E-3
0.01 0.1 1 10 100 500 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Rev. A.4 - August, 2012
SM7506NF/SM7506NFP ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

200 4.4

180 VGS= 5.5,6,7,8,9,10V 4.2

RDS(ON) - On - Resistance (mΩ)

160
4.0
140
ID - Drain Current (A)

3.8
5V
120
3.6 VGS=10V
100
3.4
80
3.2
60
4.5V
40 3.0

20 2.8
4V
0 2.6
0 1 2 3 4 5 0 20 40 60 80 100 120
VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

18 1.6
IDS=40A IDS =250µA

1.4
15
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)

1.2
12

1.0
9
0.8

6
0.6

3
0.4

0 0.2
3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 175
VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.4 - August, 2012
SM7506NF/SM7506NFP ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.2 100
VGS = 10V
2.0 IDS = 40A

1.8
Normalized On Resistance

IS - Source Current (A)

Tj=150 C
1.6 10

1.4
o
Tj=25 C
1.2

1.0 1

0.8

0.6
o
RON@T j=25 C: 3.5m Ω
0.4 0.1
-50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

6000 10
Frequency=1MHz VDS= 30V
9
IDS= 40A
5000
8
VGS - Gate-source Voltage (V)

7
C - Capacitance (pF)

4000
6
Ciss
3000 5

4
2000
3
Coss
Crss 2
1000
1

0 0
0 15 30 45 60 75 0 20 40 60 80 100

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.4 - August, 2012
SM7506NF/SM7506NFP ®

Avalanche Test Circuit and Waveforms

VDS
L
VDSX(SUS)
tp
DUT
VDS

IAS
RG
VDD

VDD
tp IL
EAS
0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS
RD

DUT VDS
90%
VGS
RG
VDD

tp
10%
VGS
td(on) tr td(off) tf

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Rev. A.4 - August, 2012
SM7506NF/SM7506NFP ®

Package Information
TO-220
E A
E/2 A1 E1
Q

H1
P

D2
D
D1
L1
L

b e c A2
b2

S
Y
TO-220 RECOMMENDED LAND PATTERN
M MILLIMETERS INCHES
B
O MIN. MAX. MIN. MAX.
L
A 3.56 4.83 0.140 0.190 2.54
52
A1 0.51 1.40 0.020 0.055 R0.
A2 2.03 2.92 0.080 0.115
b 0.38 1.02 0.015 0.040
b2 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.22 16.51 0.560 0.650
D1 8.38 9.02 0.330 0.355 UNIT: mm
D2 12.19 13.65 0.480 0.537
E 9.65 10.67 0.380 0.420
E1 6.86 8.89 0.270 0.350
e 2.54 BSC 0.100 BSC
H1 5.84 6.86 0.230 0.270
L 12.70 14.73 0.500 0.580
L1 6.35 0.250
P 3.53 4.09 0.139 0.161
Q 2.54 3.43 0.100 0.135

Note: Follow JEDEC TO-220 AB.

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Rev. A.4 - August, 2012
SM7506NF/SM7506NFP ®

Package Information
TO-220-FP
E A

A1

d1
D
L1
L

b e c A2

b2

S
Y
TO-220FP RECOMMENDED LAND PATTERN
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
2.54
A 4.20 4.80 0.165 0.189
45
A1 2.60 3.20 0.102 0.126 R0.
A2 2.10 2.90 0.083 0.114
b 0.50 1.00 0.020 0.039
b2 0.90 1.90 0.035 0.075
c 0.30 0.80 0.012 0.031
UNIT: mm
D 8.10 9.10 0.319 0.358
d1 14.50 16.50 0.571 0.650
d2 12.10 12.90 0.476 0.508
E 9.70 10.70 0.382 0.421
e 2.54 BSC 0.100 BSC
L 13.00 14.50 0.512 0.570
L1 1.60 4.00 0.063 0.157
P 3.00 3.60 0.118 0.142

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Rev. A.4 - August, 2012
SM7506NF/SM7506NFP ®

Devices Per Unit

Package Type Unit Quantity

TO-220 Tube 50
TO-220-FP Tube 50

Classification Profile

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Rev. A.4 - August, 2012
SM7506NF/SM7506NFP ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
3 3
Package Volume mm Volume mm
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm 3 Volume mm 3
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050

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Rev. A.4 - August, 2012