ME253 – Basic Electronics Lab Dept.

of ME

II/IV B.Tech (ECE)

ME253 – Basic Electronics Laboratory

LIST OF EXPERIMENTS

S.No. Name of the experiment

1. Characteristics of Silicon and Germanium diodes

2. Characteristics of Zener diode

3. Half-wave Rectifier

4. Characteristics of JFET

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ME253 – Basic Electronics Lab Dept. of ME

1. CHARACTERISTICS OF Si/Ge DIODES

Aim:
To obtain forward and reverse bias characteristics of silicon and germanium
diodes. From the characteristics to find i) cut-in voltage ii) static forward
resistance iii) Dynamic forward resistance.

Circuit Diagram:

Apparatus:

1. Silicon diode -- IN 4001 -- 1 No.

2. Germanium diode – 0A82 -- 1 No.
3. Multimeter -- 1 No.
4. DC ammeters 0-25mA, 0-500 micro amperes -- 1 No. each
5. Regulated 0-30V DC power supply -- 1 No.
6. Resistor, 1 Kohms 1/4 watt -- 1 No.

Procedure:

I. Forward Bias Characteristic:

1. Connect the circuit diagram as per Fig – 1 using silicon diode.

2. Keep the regulated supply in zero volts.
3. Connect the multimeter as 2 volts DC voltmeter across the diode.
4. Now increase the voltage across the diode by varying the dc supply, in steps of
0.1V from zero volts and note down the resulting current through the diode in the
Table – 1.
5. Take readings until a diode current of 20mA.
6. Repeat the same by replacing the silicon. Diode with a germanium diode.
7. Draw the graphs voltage across diode Vs current through diode.

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ME253 – Basic Electronics Lab Dept. of ME

II. Reverse Bias Characteristics:

1. Keep the DC supply ON and zero volts position.

2. Connect the circuit diagram as per Fig. 2 using silicon diode.
3. Connect the multimeter as 30V DC voltmeter across the diode.
4. Now vary the DC supply such that the voltage across the diode increases in steps of
1V, and note down the corresponding diode current against each voltage in the table
-2.
5. Continue upto a voltage of 20Vacross the diode.
6. Draw graph between voltage across diode Vs current through diode.

Table - 1
Forward bias characteristics

S.No. Silicon diode Germanium diode

Voltage Current Voltage Current

across the through across the through
diode (volts) diode (mA) diode diode (mA)
(volts)

Table - 2
Reverse bias characteristics

S.No. Silicon diode Germanium diode

Voltage Current Voltage Current

across the through across the through
diode (volts) diode diode diode
(micro (volts) (micro
Amps) Amps)

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ME253 – Basic Electronics Lab Dept. of ME

Expected characteristics:

CALCULATIONS :

1. Cut in voltage:- Draw a tangent to the forward bias characteristic as in Fig – 3

from the link touching most of the points of the curve. Where the tangent cuts the
x-axis is the cut – in voltage.
V
2. Static forward resistance :- R=
I
V
3. Dynamic forward resistance :- rf=
I

RESULTS:

Results as in table are studied

1. Cut-in voltage, Si=

Ge=
2. Static forward resistance R for , Si=
Ge=

3. Dynamic forward resistance r for , Si=

Ge=

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ME253 – Basic Electronics Lab Dept. of ME

PRECAUTIONS:

1. Check the wires for continuity before use.

2. Keep the power supplies at zero volts before start.
3. Check no loose connections exist.

VIVA QUESTIONS:

1. Draw the circuit symbol of the diode

2. What is the material used for anode?
3. What is the material used for cathode?
4. Draw ideal diode V-I characteristics
5. What is cut-in voltage?
6. What is a static resistance?
7. What is a dynamic resistance?
8. Explain the working of diode as a switch
9. What is space charge?
10. What is diffusion capacitance?
11. What are minority and majority carrier of p-material?
12. What are minority and majority carriers of n-material?
13. What are the specifications of a diode?
14. What is PIV?
15. Why leakage current is more for germanium diodes?
16. What is work function?
17. What is the current equation of the diode?

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ME253 – Basic Electronics Lab Dept. of ME

2. ZENER DIODE CHARACTERISTICS

AIM:
I) To obtain forward and reverse bias characteristics of a Zener diode.
II) To obtain load regulation characteristic, and
III) To find the Zener break down voltage from the characteristics.

APPARATUS:

1. DC regulated power supply -- 1 No.

2. Zener diode FZ 9.1 -- 1 No.
3. Resistor = 1 kohms,1/4 watt -- 1 No.
4. DC ammeter = 0-25mA -- 1 No.
5. Multimeter -- 1 No.
6. Decade resistance box (DRB) -- 1 No.

CIRCUIT DIAGRAM:

PROCEDURE

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ME253 – Basic Electronics Lab Dept. of ME

I. FORWARD BIAS CHARACTERISTICS

1. Connect the circuit diagram as per fig 1.

2. Start the DC supply from zero volts.
3. Increase the DC supply and note the voltage across the diode in steps of 0.1V and
note down the corresponding diode current against the voltage in the
table – 1.
4. Take the readings upto a diode current of 20mA.
5. Draw graph between voltage across diode Vs current through diode in first quadrant
as in fig. 4.

II.REVERSE BIAS CHARACTERISTICS

1. Connect the circuit diagram as per fig 2.

2. Start the DC supply form zero volts.
3. Increase the DC supply and note the voltage across the diode in steps of 1V and note
down the corresponding diode current against the voltage in the table – 2
4. Take the readings upto a diode current of 20mA.
5. Draw graph between voltage across diode Vs current through diode in third quadrant
as in fig. 4.

III. LOAD REGUALTION CHARACTERISTICS

1. Connect the circuit diagram as per fig 3.

2. Keep the DC supply at a fixed value of 15V for 9.IV Zener diode and 20V for 12V
zener diode.
3. Keep the load resistance DRB at a low value of 100 ohms and note down the
corresponding load current and load voltage in the table – 3.
4. Now go on increasing the load resistance in proper steps of 10 to 15 values upto 50
kohms and note down the corresponding load current and load voltage.
5. Note down each reading in the tabular form- 3.
6. Draw graph between load current Vs load voltage .

TABULAR FORMS:

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ME253 – Basic Electronics Lab Dept. of ME

TABLE – 1 TABLE – 2

FORWARD BIAS REVERSE BIAS

CHARACTERISTICS CHARACTERISTICS

S.No. Voltage Curren S.No. Voltage Current

across t across through
diode throug diode diode
(volts) h (volts) (mA)
diode
(mA)

TABLE -3
LOAD REGULATION CHARACTERISITCS

S.N Load resistance in (ohms) Load voltage Load current

o. in volts in mA

EXPECTED CHARACTERISTICS :

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ME253 – Basic Electronics Lab Dept. of ME

RESULTS:

Zener Break Down Voltage:- Draw a tangent on the reverse bias characteristic of the
zener diode starting from the link and touching most of the points of the curve. The
point where the tangent intercepts the –x axis is the zener break down voltage Vz.

PRECUATIONS :

1. Check the wires for continuity before use.

2. Keep the power supplies at zero volts before start.
3. All the contacts must be in tact and no loose connection must exist.

VIVA QUESTIONS:

1. Draw circuit symbol of zener diode

2. What is zener break down?
3. What is avalaunch break down?
4. What is the difference in construction of zener diode with rectifier diode?
5. Draw the ideal characteristic of the zener diode.
6. What is zener break down voltage?
7. Can a zener diode be used as a rectifier diode?
8. What is a zener regulator?
9. What are the specifications of the zener diode?

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ME253 – Basic Electronics Lab Dept. of ME

3. STUDY OF RECTIFIERS: HALF WAVE RECTIFIER

AIM:

To conduct experiment on half wave rectifier with and without capacitor filter and to find out its
ripple factor and percentage regulation.

CIRCUIT DIAGRAM :

APPARATUS:

1. 9-0-9V / 500mA transformer --- 1 No.

2. Diode 1N 4001 --- 1 No.
3. Capacitor, 10 MFD / 16V, 470 MFD / 25V --- 1 No.
4. Decade resistance box (DRB) --- 1 No.
5. Multimeter --- 1 No.
6. Test board --- 1 No.

PROCEDURE:

I. Without Filter:

1. Connect the circuit as per fig – I.

2. Keep the load resistance (DRB) at 100 ohms.
3. Apply AC and take readings of Vdc and Vac.
4. Repeat the above step with various values of load resistance in steps of 100 ohms upto 1000
ohms and note down Vdc and Vac in the table – 1 form for each step.
5. Now disconnect DRB and note VDC No load by connecting an analog 0-30V DC voltmeter
in place of DRB.
6. Calculate ripple factor = Vac/Vdc , and
Vdc n1  Vdc load
Percentage Regulation =
Vdc n1
II. With capacitor Filter:-
1. Connect the circuit diagram as per fig – 2.
2. Repeat the method followed in (I) and tabulate readings in table – 2.

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ME253 – Basic Electronics Lab Dept. of ME

3. Calculate ripple factor and % regulation.

TABULAR FORMS:

TABLE – I

Without filter:

Vdc no load =

S.No. Load resistance in Vdc (volts) Vac Ripple % Regulation

ohms (volts) factor Vdc n1  Vdc load
Vac/ Vdc Vdc n1

TABLE – 2

With capacitor filter:

Vdc no load =

S.No. Load resistance in ohms Vdc (volts) Vac Ripple % Regulation

(volts) factor Vdc n1  Vdc load
Vac/ Vdc Vdc n1

RESULTS:

1. Results as per table are studied

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ME253 – Basic Electronics Lab Dept. of ME

PRECAUTIONS:

1. All connections must be tight, no loose and dry connection must exist.
2. Check the continuity of wires used before hand.

VIVA QUESTIONS:

1. What is a rectifier?
2. What is the importance of PIV in a rectifier?
3. Draw half wave rectified wave form
4. Draw voltage waveform across capacitor at the output of the half wav e rectifier circuit.
5. What is ripple factor?
6. Is a low ripple factor is good or a higher ripple factor.
7. What is regulation?
8. What is the efficiency of the half wave rectifier?
9. What is the max theoretical ripple factor of a half wave rectifier?
10. Draw the circuit of a voltage doubler.

4. CHARACTERISTICS OF JFET

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ME253 – Basic Electronics Lab Dept. of ME

AIM:
To conduct an experiment on a given JFET and obtain its
I) Drain characteristics
ii) Transfer characteristics. Also from the characteristics to find rd, gm and µ

CIRCUIT DIAGRAM:

APPARATUS :

1. Dual regulated 0-30V DC power supply -- 1 No.

2. JFET BFW 10 or 11 -- 1 No.
3. DC ammeter 0-25mA -- 1 No.
4. Multimeter -- 1 No.

PROCEDURE:

DRAIN CHARACTERISTICS:

1. Connect the circuit diagram as per Fig-1.

2. Start with VGG and VDD keeping at zero volts.
3. Keep VGG such that VGS=0V
4. Now vary VDD such that VDS varies in steps of IV upto 10V and note down the
corresponding drain current ID and tabulate in table – 1.
5. Repeat the above experiment with VGS= -1V and -2V and tabulate the readings.
6. Draw a graph VDS Vs ID against VGS as parameter on a graph as in fig – 2.
7. From the graph calculate rd.

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ME253 – Basic Electronics Lab Dept. of ME

TRANSFER CHARACTERISTICS:

8. Set VGG and VDD at zero volts.

9. Keep VDS =1V.
10. Vary VGG such that VGS varies in steps of 0.5V and note down the corresponding
drain current ID and tabulate the readings.
11. Repeat the above experiment for VDS=3V and 5V and tabulate the readings in table
– 2.
12. Draw graph VGS Vs ID as VDS parameter as in fig – 3.
13. From the graph find gm.
14. Now µ=gm x rd.

TABULAR FORMS:

TABLE – 1

DRAIN CHARACTERISTICS

S.No. VDS VGS=0V VGS=-1V VGS=-2V

(volts) ID(mA) ID(mA) ID(mA)

TABLE – 2

TRANSFER CHARACTERISTICS

S.No. -VGS(Volts) VDS=1V VDS=3V VDS=5V

ID(mA) ID(mA) ID(mA)

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ME253 – Basic Electronics Lab Dept. of ME

CALCULATIONS:

1. Calculation of rd :-
Construct a triangle on one of the output characteristics for a particular VGS in the
active region. Find ΔVDS and Δ ID, now
VDS
rd= / VGS  cons tan t
I D
2. Calculation of gm :-
Construct a triangle on one of the transfer characteristics for a particular VDS. Find
ΔVGS and ΔID
I D
Now gm= / VDS  cons tan t
VGS
3. Calculation of µ
Now µ=gm x rd

RESULTS:
1. Drain resistance rd =
2. Transfer conductance gm =
3. Gain factor: µ=rd x gm

PRECAUTIONS:

1. Test the wires for good continuity before use

2. All the connections must be very tight and no loose connection must exist
3. All the readings must be noted with fine control and accurately
4. For a good JFET ID will be 7 to 11mA at VGS=0V. If not change the JFET.

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ME253 – Basic Electronics Lab Dept. of ME

VIVA QUESTIONS :

1. What are the advantages of FET over BJT?

2. Why input resistance in FET amplifiers are more than BJT amplifiers?
3. What is a unipolar Device?
4. What is Pinchoff voltage?
5. Draw the equivalent circuit for low frequencies to JFET
6. Write the mathematical relation for gm interms of gmo.
7. Write the equation of FET ID interms of VGS and VP.

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