PC851

High Collector-emitter Voltage

PC851 Type Photocoupler
❈ Lead forming type ( I type ) and taping reel type ( P type ) are also available. ( PC851I/PC851P )

■ Features ■ Outline Dimensions ( Unit : mm )

1. High collector-emitter voltage
Internal connection
( VCEO : 300V) 2.54 ± 0.25
diagram
2. High isolation voltage between input and 4 3 4 3
output ( Viso : 5 000V rms )

PC851

6.5 ± 0.5
Anode mark
3. Compact dual-in-line package
4. Recognized by UL, file No. E64380
1 2
■ Applications 1 2
1 Anode 3 Emitter
1. ON-OFF switching for transmission/reception 0.9 ± 0.2
2 Cathode 4 Collector
1.2 ± 0.3
circuit for telephone
2. Interface to various power supply circuits, 4.58 ± 0.5
7.62 ± 0.3
power patch boards

0.5TYP.
3.5 ± 0.5
3. Copiers, facsimiles
4. Output section for numerical control machines
5. Controller for SSRs, DC motors 3.0 ± 0.5

0.5 ± 0.1 θ θ
0.26 ± 0.1
θ = 0 to 13 ˚

■ Absolute Maximum Ratings ( Ta = 25˚C )

Parameter Symbol Rating Unit
Forward current IF 50 mA
*1
Peak forward current I FM 1 A
Input
Reverse voltage VR 6 V
Power dissipation P 70 mW
Collector-emitter voltage V CEO 300 V
Emitter-collector voltage V ECO 6 V
Output
Collector current IC 50 mA
Collector power dissipation PC 150 mW
Total power dissipation P tot 200 mW
*2
Isolation voltage V iso 5 000 V rms
Operating temperature T opr - 25 to + 100 ˚C
Storage temperature T stg - 55 to + 125 ˚C
*3
Soldering temperature T sol 260 ˚C
*1 Pulse width <=100µs, Duty ratio : 0.001
*2 40 to 60% RH, AC for 1 minute
*3 For 10 seconds

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
 PC851

■ Electro-optical Characteristics ( Ta = 25˚C )

Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage VF I F = 20mA - 1.2 1.4 V
Input Reverse current IR V R = 4V - - 10 µA
Terminal capacitance Ct V = 0, f = 1kHz - 30 250 pF
Output Collector dark current I CEO V CE = 200V, I F = 0 - - 10 - 6 A
Current transfer ratio CTR I F = 5mA, V CE = 5V 40 80 - %
Collector-emitter saturation voltage V CE(sat) I F = 20mA, I C = 1mA - 0.1 0.3 V
Transfer Isolation resistance R ISO DC500V, 40 to 60% RH 5 x 1010 1011 - Ω
charac- Floating capacitance Cf V = 0, f = 1MHz - 0.6 1.0 pF
teristics Cut-off frequency fC V CE = 5V, I C = 2mA, R L = 100 Ω, - 3dB - 50 - kHz
Rise time tr V CE = 2V, I C = 2mA - 4 10 µs
Response time
Fall time tf R L = 100 Ω - 5 12 µs

Fig. 1 Forward Current vs. Fig. 2 Collector Power Dissipation vs.

Ambient Temperature Ambient Temperature
60 200
Collector power dissipation P C ( mW )
50
150
Forward current I F ( mA )

40

30 100

20
50
10

0
0
- 25 0 25 50 75 100 125 - 25 0 25 50 75 100 125

Ambient temperature T a ( ˚C ) Ambient temperature T a ( ˚C )

Fig. 3 Peak Forward Current vs. Duty Ratio Fig. 4 Forward Current vs. Forward Voltage

10 000
Pulse width <=100µs 500
T a = 75˚C
5 000 T a = 25˚C
200
50˚C 25˚C
2 000
Peak forward current I FM ( mA )

100 0˚C
1 000
Forward current I F ( mA )

50 - 25˚C
500
20
200
100 10

50 5

20 2
10 1
5
5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Duty ratio Forward voltage V F ( V )

 PC851

Fig. 5 Current Transfer Ratio vs. Fig. 6 Collector Current vs.

Forward Current Collector-emitter Voltage
100
VCE = 5V I F = 30mA T a = 25˚C
20
T a = 25˚C A
25m P C ( MAX. )
Current transfer ratio CTR ( % )

A
20m

Collector current I C ( mA )
15mA

50
10 10mA

5mA

0 0
1 2 5 10 20 50 100 0 5 10
Forward current I F ( mA ) Collector-emitter voltage V CE ( V )

Fig. 7 Relative Current Transfer Ratio vs. Fig. 8 Collector-emitter Saturation Voltage
Ambient Temperature vs. Ambient Temperature
150 0.16
I F = 5mA I F = 20mA
V CE = 5V I C = 1mA
0.14
Collector-emitter saturation voltage V CE(sat) ( V )
Relative current transfer ratio ( % )

0.12
100
0.10

0.08

0.06
50
0.04

0.02

0 0
- 25 0 25 50 75 100 - 25 0 25 50 75 100
Ambient temperature T a ( ˚C ) Ambient temperature T a ( ˚C )

Fig. 9 Collector Dark Current vs. Fig.10 Response Time vs. Load Resistance
Ambient Temperature
10 -5
500
V CE = 200V V CE = 2V
-6
200 I C = 2mA
10
100 T a = 25˚C
Collector dark current I CEO ( A )

50
-7
Response time ( µ s )

10
tr
20
tf
-8 10
10 td
5

10 -9
2
ts
1
10 - 10 0.5

0.2
10 - 11
0.1
- 25 0 25 50 75 100 0.01 0.1 1 10 50
Ambient temperature T a ( ˚C )
Load resistance RL ( k Ω )
 PC851

Fig.11 Frequency Response

Test Circuit for Response Time
V CE = 5V
I C = 2mA
0
T a = 25˚C
VCC Input

Voltage gain A v ( dB )
Output 100 Ω
Input RD RL Output 10%
RL = 10k Ω 1k Ω
- 10
90%
td ts
tr tf

- 20

0.5 1 2 5 10 20 50 100 200 500

Frequency f ( kHz )

Fig.12 Collector-emitter Saturation

Voltage vs. Forward Current Test Circuit for Frepuency Response
6
T a = 25˚C
Collector-emitter saturation voltage V CE(sat) ( V )

5
7mA
VCC
4 5mA
RD RL
3mA Output
3

1mA
2
I C = 0.5mA
1

0
0 2 4 6 8 10 12 14 16 18 20

Forward current I F ( mA )

● Please refer to the chapter “ Precautions for Use ”