2014 International Conference on Electronics and Communication Systems (lCECS -2014), Feb.

13 -14, 2014, Coimbatore, INDIA

PERFORMANCE AND
CHARACTERISTIC ANALYSIS OF
DOUBLE GATE MOSFET OVER SINGLE
GATE MOSFET

A. Monisha R.S Suriavel Rao

Electronics and Communication engineering Electronics and Communication engineering
Karunya University Karunya university
Coimbatore, India Coimbatore, India
monishaa89@karunya.edu.in suriavelrao@karunya.edu

Abstract- In modern world, low power portable devices B. Double Gate MOSFET
requires more devices to be integrated on a single chip In double gate MOSFET the gate
since single gate MOSFET occupies large space due to is surrounded by the electrode on both the sides. The
its design construction, therefore in order to reduce the operation of the double Gate MOSFET is when a
size of the device, to obtain high speed and reduction in voltage is applied to the gate it will control the
cost we go for double gate MOSFET and analysis of
electric field and determine the flow of the current
characteristic parameters such as (drain current,
through the channel. This has a common operation
capacitance, gate/control voltage, on-resistance, power
that both the gates can operate simultaneously.
or voltage gain, thickness of oxide layer and resistance
Another mode of operation is switching only one gate
of poly/gate are discussed.
at a time and applying bias to the next gate (or) the
Keywords-single gate MOSFET; double gate MOSFET; second gate it is called as back gate.

nanometric C. Advantages of double gate MOSFETs over single

I. INTRODUCTION gate MOSFETs
The double gate MOSFETs has better control of
A MOSFET is a semiconductor device which short channel effect (SCEs). When there is a
is used in many electronic devices for amplifying and reduction in the short channel effect it causes
switching electrical signals. It is a high speed, high increase in the Ioff because of drain induced barrier
integration density and low power high scalable lowering effect. DIBL is referred as the threshold
element in very large scale integrated circuits. There reduction of a transistor when it is at high drain
are various types of MOSFETs but here we discuss voltage. Most common method of reducing the short
about single gate MOSFETs and double gate channel effect is modeling the device with ultra thin
MOSFETs. silicon film and which will give the possibility of
scaling down the CMOS devices into nanometric
A. Single Gate MOSFET
scale. The extremely thin silicon film uses the
A single gate MOSFET is a device with concept of "volume inversion" technique. The double
four terminals they are source, drain, gate and body. gate MOSFET maintains good electrical
Which has two operating modes; they are the characteristics by two factors, they have high Ion/Ioff
enhancement mode and depletion mode, in ratio and sharp IN slope. And it will keep the
enhancement mode when there is a voltage drop fabrication process very simple. Double gate
across the oxide produces a conducting channel
MOSFETs allows high drive current also the
between the source and drain. In the depletion mode
undoped channel reduces the impurity scattering and
the channels consist of carriers in a surface impurity
it has a better leakage current reduction [1].
layer of opposite type of the substrate and
conductivity is decreased by application of a field Double gate and single gate MOSFETs are
that depletes carriers from this surface layer. compared in terms of the thermal noise. There is an
improvement in the noise figure of the double gate
2014 International Conference on Electronics and Communication Systems (lCECS -2014), Feb.13 -14, 2014, Coimbatore, INDIA

MOSFET is achieved by increase in the cross co­ meaning [5]. The drain acts as the output and the
relation of the drain and the gate currents. It is proved source acts as the input, the blue color represents the
by the presence of residual undesired charged metal and green represents the n-diffusion and red for
impurity in the DG MOSFETs [2]. The noise due to poly silicon.
the thermal radiation is generated by the carrier
The performance analyzing of the double gate and
velocity fluctuation it is established by MONTE
single gate MOSFET is achieved by applying a gate
CARLO device simulation. The carrier velocity
voltage of about 1.2 V with the start time, rise time,
fluctuation is higher in the double gate MOSFETs.
pulse time and fall time respectively. This design
Noise figure is the amount of degradation of the noise
includes the poly drain and the source. The source
to signal ratio which is caused by various
and the drain have equal capacitances and
components in the radio frequency signal chain. The
resistances.
noise figure ratio is lower for double gate MOSFETs.
Double gate and single gate MOSFET sensitivity due
to the distribution of residual discrete doping in the
channel as follows, the double gate which is less
sensitive to doping perturbation than the single gate
MOSFET. The reduction of IOIl reaches about 10% in
single gate and 6.5% in double gate MOSFETs.
Using doped channel in the device will increase the
transport properties of the device; this property
makes the device less sensItive to doping
perturbation. The transport in the channel is achieved
with the help of 3D MONTE CARLO simulation; the
single gate MOSFETs shows poor sub-threshold
voltage due to its form factor which is very small for
controlling the short channel effect, but the double
gate MOSFETs shows better sub-threshold voltage
[3]. Figure I. Layout of SO MOSFET

Non-overlapping technique in single and double

gate MOSFETs for short channel immunity are The drain and the source capacitances are 0.19fF
discussed below, the technique of ratio evaluation of and 211m thickness and resistance of 80 ohm. The
natural length to the effective channel length for layout can be drawn by selecting the appropriate
minimizing the short channel effect is proposed, and material from the palette of layers and drawing in the
one of the major reasons for short channel effect is window editor. After fmishing the device can be run
high permittivity channel materials such as and the output is verified.
germanium. Channel engineering is one of the main
technologies to improve the performance of the
device non-overlapping technique is one of the
concepts of channel engineering. Double gate devices
are preferred for its suppression of short channel
effect, low leakage current and better sub-threshold
characteristics. The germanium on insulator based
devices has high degree of short channel effect than
the silicon on insulator based MOSFETs [4].

II. CHARACTERISTIC ANALYSIS OF DOUBLE

GATE MOSFET OVER SINGLE GATE MOSFET

The layout of the MOSFET is drawn with the

length of 90 nm and the width of 120 nm; the double
gate MOSFET has a resistance of 67 ohm and
Figure 2. Layout of DO MOSFET
thickness of 3nm. The resistances present in the
layout because of the metal connections. The single
For a double gate MOSFET when the output
gate MOSFET has a resistance of 32 ohm and
voltage is high both the drain voltage as well as the
thickness of 2nm. The MOSFET characteristics are
gate voltages are high for duration of 1.0- 1.2 ns, the
achieved with the help of the MICROWIND 3.0
sample output voltage obtained for the double gate
version tool. The coding of the color has different
2014 International Conference on Electronics and Communication Systems (lCECS -2014), Feb.13 -14, 2014, Coimbatore, INDIA

MOSFET is 3.0 V. For a single gate MOSFET the I,. � ,

simulated output is 0.90 V for the same duration. For

I
I \1 !
determining the drain current the following equation !I
II
is used. •

, jI
(1) I
I ,
I, .
I
!
The metal gate work function impacts on the !I
double gate MOSFET is considered and the threshold I
""
voltage and the leakage current can be determined !I
when the work function of the metal gate is raised the I
!
Ioff decreases and the threshold voltage get increased i ,
I, .
rapidly. For maintaining the Ioff as low the metal
!
work function must be increased as well as the on !I
resistance should be low as possible. I

III. RESULTS
..
!I +
I II
-----'"
!
I I
•
13
" " II � "
i
,
15 1I
1 15 " -' ,�

I
I

i
,
Figure 4. Output voltage with gate and control voltage for double

I gate MOSFET
-
:m

13

I I Figure 3&4 shows that the output voltage of the

I I
I double gate MOSFET is high when both the gate
", I
I voltage and the drain voltages are high, and the
,
I , output voltage obtained is 0.03V for a duration of
:m
13
I-- - 1.0 - 1.2 ns, for the same duration the output voltage

i.
obtained for the single gate MOSFET is 0.90V.
..
Hence the conventional charge can be found out by

j
the equation as follows

I
" (2)

This equation will give the accurate charge of the

Figure 3. Output voltage with gate and control voltage for single
charge carriers; with this calculated charge value the
gate MOSFET drain current can be determined.

I I I I
..
lj..
lD"
". IN"'1)1I";
". I I I I
". I I I I
".

". I I I I
If' I I f\ I I
,,'
". I I - - I I
lf�
,�
(I"l
,� -"

,� � I "
".-
-

II.
I
'" I�
,� �

'10 I"
,�

l,
10
I" I
�100 " " " " " " " !mtQ!,
2014 International Conference on Electronics and Communication Systems (lCECS -2014), Feb.13 -14, 2014, Coimbatore, INDIA

Figure 5. Current of a SG MOSFET with output voltage REFERENCES

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IV CONCLUSION

The various comparisons for the characteristics of

double gate MOSFETs and single gate MOSFETs
has been analyzed by the layout simulation. The
parameters such as output voltage, drain current,
capacitances, threshold voltage, oxide thickness,
resistances at switch ON condition, number of bulk
capacitors, resistance of poly-silicon and power or
voltage gain are simulated. From this discussion it is
shown that DG MOSFETs are better compared to the
SG MOSFETs.