NTF2955, NVF2955

MOSFET – Power, Single,

P-Channel, SOT-223
-60 V, -2.6 A
Features
• Design for low RDS(on) http://onsemi.com

• Withstands High Energy in Avalanche and Commutation Modes

V(BR)DSS RDS(on) TYP ID MAX
• AEC−Q101 Qualified − NVF2955
−60 V 145 mW @ −10 V −2.6 A
• These Devices are Pb−Free and are RoHS Compliant
P−Channel
Applications
• Power Supplies D

• PWM Motor Control

• Converters
• Power Management G

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) S

Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS −60 V
MARKING DIAGRAM AND
PIN ASSIGNMENT
Gate−to−Source Voltage VGS ±20 V 4 Drain

Continuous Drain Steady ID A 4

TA = 25°C −2.6
Current (Note 1) State 12
TA = 85°C −2.0 3 AYW
2955G
Power Dissipation Steady TA = 25°C PD 2.3 W SOT−223 G
(Note 1) State CASE 318E
STYLE 3 1 3
2
Continuous Drain Steady TA = 25°C ID −1.7 A Gate Drain
Source
Current (Note 2) State
TA = 85°C −1.3
A = Assembly Location
Power Dissipation TA = 25°C PD 1.0 W Y = Year
(Note 2) W = Work Week
G = Pb−Free Package
Pulsed Drain Current tp = 10 ms IDM −17 A
(Note: Microdot may be in either location)
Operating Junction and Storage Temperature TJ, −55 to °C
TSTG 175

Single Pulse Drain−to−Source Avalanche EAS 225 mJ ORDERING INFORMATION

Energy (VDD = 25 V, VG = 10 V, IPK = 6.7 A,
L = 10 mH, RG = 25 W) Device Package Shipping†

Lead Temperature for Soldering Purposes TL 260 °C NTF2955T1G SOT−223 1000 /Tape & Reel
(1/8” from case for 10 seconds) (Pb−Free)

THERMAL RESISTANCE RATINGS NVF2955T1G SOT−223 1000/ Tape & Reel

(Pb−Free)
Parameter Symbol Max Unit
†For information on tape and reel specifications,
Junction−to−Tab (Drain) − Steady State (Note 2) RqJC 14 including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Junction−to−Ambient − Steady State (Note 1) RqJA 65 °C/W Brochure, BRD8011/D.
Junction−to−Ambient − Steady State (Note 2) RqJA 150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127
in2 [1 oz] including traces)

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

May, 2019 − Rev. 7 NTF2955/D
 NTF2955, NVF2955

2. When surface mounted to an FR4 board using the minimum recommended

pad size (Cu. area = 0.341 in2)

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 NTF2955, NVF2955

ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −60 V
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ 66.4 mV/°C
Temperature Coefficient
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C −1.0 mA
VDS = −60 V
TJ = 125°C −50
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −1.0 mA −2.0 −4.0 V
Drain−to−Source On Resistance RDS(on) VGS = −10 V, ID = −0.75 A 145 170 mW
VGS = −10 V, ID = −1.5 A 150 180
VGS = −10 V, ID = −2.4 A 154 185
Forward Transconductance gFS VGS = −15 V, ID = −0.75 A 1.77 S

CHARGES AND CAPACITANCES

Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, 492 pF
VDS = 25 V
Output Capacitance COSS 165
Reverse Transfer Capacitance CRSS 50
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 30 V, 14.3 nC
ID = 1.5 A
Threshold Gate Charge QG(TH) 1.2
Gate−to−Source Charge QGS 2.3
Gate−to−Drain Charge QGD 5.2

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time td(ON) VGS = 10 V, VDD = 25 V, 11 ns
ID = 1.5 A, RG = 9.1 W
Rise Time tr RL = 25 W 7.6
Turn−Off Delay Time td(OFF) 65
Fall Time tf 38

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C −1.10 −1.30 V
IS = 1.5 A
TJ = 125°C −0.9
Reverse Recovery Time tRR 36
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 20 ns
Discharge Time tb IS = 1.5 A 16
Reverse Recovery Charge QRR 0.139 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.

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 NTF2955, NVF2955

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

10 10
VGS = −6 V VDS ≥ 10 V
TJ = −55°C
−ID, DRAIN CURRENT (AMPS)

−ID, DRAIN CURRENT (AMPS)

VGS = −10 V to −7 V TJ = 125°C
TJ = 25 °C 8
8 TJ = 25°C
VGS = −5.5 V

6 6

VGS = −5 V
4 4

VGS = −4.5 V
2 2

VGS = −3.8 V
0 0
0 1 2 3 4 5 6 7 8 9 10 2 4 6 8 10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.4 0.25
VGS = −10 V TJ = 25°C
0.225

0.3 0.2
TJ = 125°C
0.175
VGS = −10 V
0.2 0.15
TJ = 25°C
0.125 VGS = −15 V

0.1 TJ = −55°C 0.1

0.075

0 0.05
0 2 4 6 8 10 0 2 4 6 8 10
−ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current
and Temperature and Gate Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

2 1000
ID = −1.5 A VGS = 0 V
1.8
VGS = −10 V
1.6 TJ = 150°C
−IDSS, LEAKAGE (nA)

1.4
1.2
1 100
0.8 TJ = 125°C

0.6
0.4
0.2
0 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 35 40 45 50 55 60
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current

Temperature versus Voltage

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 NTF2955, NVF2955

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1200 12 60
VDS = 0 V VGS = 0 V TJ = 25°C
QT
1000 Ciss 10 50
C, CAPACITANCE (pF)

800 8 VGS 40
Crss QGS QGD
600 6 30
Ciss

400 4 20
VDS
200 Coss 2 ID = −1.5 A 10
Crss TJ = 25°C
0 0 0
10 5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16
−VGS −VDS Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 8. Gate−to−Source and
Figure 7. Capacitance Variation Drain−to−Source Voltage versus Total Charge

1000 5
VDD = −25 V −IS, SOURCE CURRENT (AMPS) VGS = 0 V
ID = −1.5 A TJ = 25°C
VGS = −10 V 4

100
t, TIME (ns)

td(off) 3
tf
2
10 td(on)

tr 1

1 0
1 10 100 0 0.25 0.5 0.75 1 1.25 1.5 1.75
RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus Current
versus Gate Resistance

100 250
EAS, SINGLE PULSE DRAIN−TO−SOURCE

VGS = −20 V IPK = −6.7 A

SINGLE PULSE
−ID, DRAIN CURRENT (AMPS)

TC = 25°C 10 ms 200
AVALANCHE ENERGY (mJ)

10
100 ms
1 ms 150
10 ms
1
dc 100

0.1
RDS(on) LIMIT 50
THERMAL LIMIT
PACKAGE LIMIT
0.01 0
0.1 1 10 100 25 50 75 100 125 150 175
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Safe Operating Area Starting Junction Temperature

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 NTF2955, NVF2955

r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 100

D = 0.5
0.2
10 0.1
RESISTANCE (NORMALIZED)

0.05
0.02
1
0.01

0.1

Single Pulse
0.01

Cu area − 727 mm2, 1 oz. thick traces

0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, TIME (s)

Figure 13. Thermal Response

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 NTF2955, NVF2955

PACKAGE DIMENSIONS

SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.

4 MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
HE E A 1.50 1.63 1.75 0.060 0.064 0.068
1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
b D 6.30 6.50 6.70 0.249 0.256 0.263
E 3.30 3.50 3.70 0.130 0.138 0.145
e1 e 2.20 2.30 2.40 0.087 0.091 0.094
e e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20 −−− −−− 0.008 −−− −−−
C L1 1.50 1.75 2.00 0.060 0.069 0.078
q HE 6.70 7.00 7.30 0.264 0.276 0.287
A q 0° − 10° 0° − 10°
0.08 (0003) STYLE 3:
A1 L PIN 1. GATE
L1 2. DRAIN
3. SOURCE
4. DRAIN

SOLDERING FOOTPRINT*
3.8
0.15

2.0
0.079

6.3
2.3 2.3
0.248
0.091 0.091

2.0
0.079

1.5 SCALE 6:1 ǒinches

mm Ǔ
0.059
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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