Roll No.

: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
Amrita Vishwa Vidyapeetham
Amrita School of Engineering, Coimbatore
B.Tech. Second Assessment Examinations – August 2019
Third Semester
Electrical & Electronics Engineering
15EEE201 Analog Electronic Circuits
Answer Key
Time: Two hours Maximum: 50 Marks
CO Course Outcomes
CO01 Identify the symbols and structure of BJTs and MOSFETs and understand their characteristics.
CO02 Develop small signal models and analyze the frequency response of BJTs and MOSFETs.
CO03 Design and develop simple clipper, clamper and multivibrator circuits.
CO04 Design and analysis of linear voltage, IC regulators, feedback amplifiers and oscillators.
CO05 Analyze the different classes of power amplifiers.

Answer all questions

1. State any two reasons why differential amplifier is superior over single stage amplifiers? CO02
Solution: (2 marks) BTL : L2
 Noise suppression/rejection capability
 Gain is high at low frequencies
2. Consider the circuit shown below where VD1 = 4 V and ID1 = 0.4 mA. Assume that Q1 and CO01
2
Q2 are identical with W/L = 2, µn Cox = 100 µA/V . Find the drain current and voltage of
BTL : L4
Q2. Assume λ = 0. (3 marks)

Solution:
Q1 and Q2 are identical and have equal VGS. (1 mark)
Assuming that Q2 is operating in saturation mode, its drain
current will be identical. ID2 = 0.4 mA (1 mark)

VD2 = 10 – 0.4m x 10k = 6 V (1 mark)

3. The NMOS transistor shown below operates with ID =I =1 mA, Vt=1.2V, µnCox =0.5mA/V2, CO01
and W/L = 1. The channel length modulation is small i.e. λ is negligible. Determine VDS BTL : L3
and VGS. (3 marks)
Solution:
ID = k’n (VGS – VT)2
1 = 0.5 x 0.5 m (VGS – 1.2)2
4 = (VGS – 1.2)2 (1 mark)
VGS = 3.2 V (1 mark)
VGS = VDS = 3.2 V (1 mark)
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4. Mathematically express how channel-length modulation affects the drain current in the CO01
MOSFET. (3 marks)
BTL : L2
Solution:
The phenomenon that the channel length is reduced from L to L-ΔL is known as channel-
length modulation.

(2 marks)

(1 mark)

5. An N-channel MOSFET is biased in its linear region for use as a voltage-controlled CO01
resistor. Derive an expression for rDS when VDS is small. Also determine the value of the
BTL : L3
resistance using the following parameters: Vt = 0.5 𝑉, VGS = 2.0 𝑉, VDS = 5 𝑉, W/L = 100,
Cox = 10−8 F/cm2 and µn = 800 cm2/V-s. (4 marks)
Solution:

(1 mark)

(2 marks)

rDS = 833.33 Ω (1 mark)

6. Circuit below is designed to operate at zero bias voltage at the gate of Q1 and Q2 (Q1 & Q2 CO02
are matched and λ = 0). The practical circuit, however, includes a slight mismatch of RD1 =
BTL : L4
RD − 0.5 ∆RD and RD2 = RD + 0.5 ∆RD (∆RD /RD is small). If v1 = v2 = 0, derive the
expression for differential DC voltage at the output vo = vo2 − vo1. (4 marks)
Solution:

Since transistors are matched and VGS1 = VGS2 (1 mark)

(1 mark)

(1 mark)
(1 mark)

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7. Design the circuit shown below so that the transistor operates at ID = 0.4 mA and VD = 1V. CO01
The NMOS transistor has Vt = 2 V, µnCox = 20 mA/V2, L = 10 µm and W = 400 µm.
BTL : L3
Assume λ = 0. (4 marks)
Solution:
Since VD = 1 V, assume the transistor is in saturation region.
ID = k’n (VGS – VT)2
Vov2 = 0.001 => VGS = 2.0316 V (2 marks)
Since gate is grounded, potential at source must be VS = – 2.0316 V
RS = VS – VSS/ID = 7.42 kΩ (1 mark)
RD = VDD – VD/ID = 10 kΩ (1 mark)

8. Compare the power amplifiers with respect to the following features: a) circuit diagram, CO05
b) conduction angle, c) power conversion efficiency and d) output waveform (4 marks)
BTL : L2
Solution:

9. Derive the power conversion efficiency of a class A power amplifier? (4 marks) CO05
Solution: BTL : L2
(1 mark)

(1 mark)

(1 mark)

(1 mark)
10. For the MOSFET shown in figure, assume aspect ratio= 2, VDD =2 V, µn Cox =100 µA/V2 CO01
and Vt = 0.5 V. Find the input voltage Vin which switches the transistor from saturation
BTL : L4
region to linear region. (5 marks)
Solution:
ID = ½ kn [Vov]2 (1 mark)
Since VGS – Vt = VDS = Vout
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 ID = 100 x 10-6 VDS2 (1 mark)

In eqn, VDD = IDRD + VDS substituting the value of ID

VDD = 10 k x 100 x 10-6 VDS2 + VDS
=> 2 = VDS2 + VDS (1 mark)
VDS = (-1 + 3)/2 = 1 or -2 V (1 mark)
VDS = VGS – Vt => VGS = 1.5 V (1 mark)

11. An NMOS differential amplifier is operated at a bias current of I = 0.4 mA and has a W/L CO02
ratio of 32, µnCox = 200 µA/V2, VA = 10 V, RD = 5 kΩ and RSS = 25 kΩ. Find the
BTL : L3
differential gain, the common-mode gain and the common-mode rejection ratio if the output
is taken differentially. (6 marks)
Solution:

(1 mark)

(1 mark)

(1 mark)

(1 mark)

Acm =0, CMRR = ∞ (2 marks)

12. A discrete common source MOSFET amplifier with drain-to-gate feedback biasing CO02
arrangement is shown below. The transistor has Vt = 1.5 V, µnCox(W/L) = 0.25 mA/V2, and
BTL : L3
VA = 50 V.
a) Find the operating point of the biasing arrangement. (2 marks)
b) Draw the small signal equivalent circuit and determine its parameters. (4 marks)
c) Determine the small signal voltage gain. (2 marks)
Solution:
a) ID = 0.125(VD – 1.5)2
VD = 15 – 10ID
Solving gives, ID = 1.06 mA, VD = 4.4 V (2 marks)
b)

(2 marks)

= 0.25(4.4 – 1.5) = 0.725 mA/V (1 mark)

ro = VA/ID = 50/1.06 = 47 kΩ (1 mark)
c)

(2 marks)
_______________
Bloom's Taxonomy Level (BTL): L1 – Remember, L2 – Understand, L3 – Apply, L4 – Analyze, L5 - Evaluate
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