BT139-800G (4q-Triac)

BT139-800G
B
20A
-2
TO 4Q Triac
27 September 2013 Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78 (T0-220AB) plastic package intended
for use in applications requiring high bidirectional transient and blocking voltage
capability and high thermal cycling performance.
2. Features and benefits

• High voltage capability
• Least sensitive gate for highest noise immunity
• High minimum IGT for guaranteed immunity to gate noise
• Planar passivated for voltage ruggedness and reliability
• Triggering in all four quadrants
3. Applications
• General purpose motor controls
• General purpose switching
4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off- - - 800 V
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; - - 155 A
state current tp = 20 ms; Fig. 4; Fig. 5
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1; - - 16 A
Fig. 2; Fig. 3
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - 5 50 mA
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-; - 8 50 mA

Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-; - 10 50 mA

Tj = 25 °C; Fig. 7
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NXP Semiconductors BT139-800G
4Q Triac

VD = 12 V; IT = 0.1 A; T2- G+; - 22 100 mA
Tj = 25 °C; Fig. 7
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1 mb
T2 T1
2 T2 main terminal 2 G
sym051
3 G gate
mb T2 mounting base; main
terminal 2
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BT139-800G TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78
hole; 3-lead TO-220AB
BT139-800G All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 27 September 2013 2 / 13

4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; Fig. 1; - 16 A
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C; - 155 A
current tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; - 170 A

tp = 16.7 ms
2
I t I2t for fusing tp = 10 ms; SIN - 120 2
A s
dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs
T2+ G+
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; - 50 A/µs
T2+ G-
T2- G-
T2- G+
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C
Tj junction temperature - 125 °C

4Q Triac
001aab090 001aab091
50 20
IT(RMS) IT(RMS)
(A) (A) (1)
40
15
30
10
20
5
10
0 0
10- 2 10- 1 1 10 - 50 0 50 100 150
surge duration (s) Tmb (°C)
f = 50 Hz; Tmb = 99 °C (1) Tmb = 99 °C

Fig. 1. RMS on-state current as a function of surge Fig. 2. RMS on-state current as a function of mounting
duration; maximum values base temperature; maximum values
001aab093
25 95
Ptot α= Tmb(max)
(W) 180 (°C)
20 101
120
90
15 60 107
30
10 113
α
5 α 119
0 125
0 5 10 15 20
IT(RMS) (A)
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values.

4Q Triac
001aab102
160
ITSM IT ITSM
(A)
120
T
t
Tj(initial) = 25 °C max
80
40
0
1 10 102 103
n
f = 50 Hz; n = number of cycles

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
001aab092
103
ITSM
(A)
102
(1)
IT ITSM
(2)
T
t
Tj(initial) = 25 °C max
10
10- 2 10- 1 1 10 102
T (ms)
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values

4Q Triac
8. Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance half cycle; Fig. 6 - - 1.7 K/W
from junction to full cycle; Fig. 6 - - 1.2 K/W
mounting base
Rth(j-a) thermal resistance in free air - 60 - K/W
from junction to
ambient
001aab098
10
Zth(j-mb)
(K/W)
(1)
1
(2)
10- 1
PD
10- 2
tp t
10- 3
10- 5 10- 4 10- 3 10- 2 10- 1 1 10
tp (s)
(1) Unidirectional (half cycle)

(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width

4Q Triac
9. Characteristics
Table 6. Characteristics
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - 5 50 mA
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-; - 8 50 mA

Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-; - 10 50 mA

Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+; - 22 100 mA

Tj = 25 °C; Fig. 7
IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; - 7 60 mA

Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-; - 20 90 mA

Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-; - 8 60 mA

Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+; - 10 90 mA

Tj = 25 °C; Fig. 8
IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 6 60 mA
VT on-state voltage IT = 20 A; Tj = 25 °C; Fig. 10 - 1.2 1.6 V
VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1 V

Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C; 0.25 0.4 - V
Fig. 11
ID off-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state VDM = 536 V; Tj = 125 °C; (VDM = 67% 200 250 - V/µs
voltage of VDRM); exponential waveform; gate
open circuit
dVcom/dt rate of change of VD = 400 V; Tj = 95 °C; dIcom/dt = 7.2 A/ 10 20 - V/µs
commutating voltage ms; IT = 16 A; gate open circuit
tgt gate-controlled turn-on ITM = 20 A; VD = 800 V; IG = 0.1 A; dIG/ - 2 - µs

time dt = 5 A/µs

4Q Triac
001aab448 001aab100
3 3
IGT (Tj) IL
IGT(25°C) (1) IL(25°C)
(2)
2 (3) 2
(4)
1 1
0 0
- 50 0 50 100 150 - 50 0 50 100 150
Tj (°C) Tj (°C)
(1) T2- G+ Fig. 8. Normalized latching current as a function of

(2) T2+ G- junction temperature
(3) T2- G-
(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
001aab099 001aab094
3 50
IT
IH (A) (1) (2) (3)
IH(25°C) 40
2
30
20
1
10
0 0
- 50 0 50 100 150 0 1 2 3
Tj (°C) VT (V)
Fig. 9. Normalized holding current as a function of Vo = 1.195 V; Rs = 0.018 Ω

junction temperature (1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage

4Q Triac
001aab101
1.6
VGT
VGT(25°C)
1.2
0.8
0.4
- 50 0 50 100 150
Tj (°C)
Fig. 11. Normalized gate trigger voltage as a function of junction temperature

4Q Triac
10. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E A
p A1
q mounting
D1 base
L1(1) L2(1)
Q
b1(2)
L (3×)
b2(2)
(2×)
1 2 3
b(3×) c
e e
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
L2(1)
UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) p q Q
max.
4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6
mm 2.54 3.0
4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
08-04-23
SOT78 3-lead TO-220AB SC-46
08-06-13
Fig. 12. Package outline TO-220AB (SOT78)

4Q Triac
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punitive, special or consequential damages (including - without limitation -
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or replacement of any products or rework charges) whether or not such
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
Document Product Definition customer for the products described herein shall be limited in accordance
status [1][2] status [3] with the Terms and conditions of commercial sale of NXP Semiconductors.
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[short] data the objective specification for product make changes to information published in this document, including without
sheet development. limitation specifications and product descriptions, at any time and without
Preliminary Qualification This document contains data from the notice. This document supersedes and replaces all information supplied prior
[short] data preliminary specification. to the publication hereof.
sheet
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Product Production This document contains the product authorized or warranted to be suitable for use in life support, life-critical or
[short] data specification. safety-critical systems or equipment, nor in applications where failure or
sheet malfunction of an NXP Semiconductors product can reasonably be expected
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completing a design. inclusion and/or use of NXP Semiconductors products in such equipment or
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changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on Quick reference data — The Quick reference data is an extract of the
the Internet at URL http://www.nxp.com. product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these

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representation or warranty that such applications will be suitable for the
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Short data sheet — A short data sheet is an extract from a full data sheet damage, costs or problem which is based on any weakness or default
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Product specification — The information and data provided in a Product Limiting values — Stress above one or more limiting values (as defined in
data sheet shall define the specification of the product as agreed between the Absolute Maximum Ratings System of IEC 60134) will cause permanent
NXP Semiconductors and its customer, unless NXP Semiconductors and damage to the device. Limiting values are stress ratings only and (proper)
customer have explicitly agreed otherwise in writing. In no event however, operation of the device at these or any other conditions above those
shall an agreement be valid in which the NXP Semiconductors product given in the Recommended operating conditions section (if present) or the
is deemed to offer functions and qualities beyond those described in the Characteristics sections of this document is not warranted. Constant or
Product data sheet. repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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11.3 Disclaimers products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
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responsibility for the content in this document if provided by an information
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No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the

4Q Triac
grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
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automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
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Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
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Notice: All referenced brands, product names, service names and
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Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
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QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

4Q Triac
12. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Limiting values .......................................................3
8 Thermal characteristics .........................................6
9 Characteristics ....................................................... 7
10 Package outline ................................................... 10
11 Legal information .................................................11
11.1 Data sheet status ............................................... 11
11.2 Definitions ...........................................................11
11.3 Disclaimers .........................................................11
11.4 Trademarks ........................................................ 12
© NXP N.V. 2013. All rights reserved

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 September 2013

This datasheet has been downloaded from:
www.DatasheetCatalog.com
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2. Features and benefits

4. Quick reference data

VD = 12 V; IT = 0.1 A; T2+ G-; - 8 50 mA

VD = 12 V; IT = 0.1 A; T2- G-; - 10 50 mA

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet 27 September 2013 2 / 13

full sine wave; Tj(init) = 25 °C; - 170 A

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.5 W

Tstg storage temperature -40 150 °C

Tj junction temperature - 125 °C

Product data sheet 27 September 2013 3 / 13

f = 50 Hz; Tmb = 99 °C (1) Tmb = 99 °C

Product data sheet 27 September 2013 4 / 13

f = 50 Hz; n = number of cycles

Product data sheet 27 September 2013 5 / 13

(1) Unidirectional (half cycle)

Product data sheet 27 September 2013 6 / 13

VD = 12 V; IT = 0.1 A; T2+ G-; - 8 50 mA

VD = 12 V; IT = 0.1 A; T2- G-; - 10 50 mA

VD = 12 V; IT = 0.1 A; T2- G+; - 22 100 mA

IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; - 7 60 mA

VD = 12 V; IG = 0.1 A; T2+ G-; - 20 90 mA

VD = 12 V; IG = 0.1 A; T2- G-; - 8 60 mA

VD = 12 V; IG = 0.1 A; T2- G+; - 10 90 mA

IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 6 60 mA

VT on-state voltage IT = 20 A; Tj = 25 °C; Fig. 10 - 1.2 1.6 V

VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.7 1 V

tgt gate-controlled turn-on ITM = 20 A; VD = 800 V; IG = 0.1 A; dIG/ - 2 - µs

Product data sheet 27 September 2013 7 / 13

(1) T2- G+ Fig. 8. Normalized latching current as a function of

Fig. 9. Normalized holding current as a function of Vo = 1.195 V; Rs = 0.018 Ω

Product data sheet 27 September 2013 8 / 13

Fig. 11. Normalized gate trigger voltage as a function of junction temperature

Product data sheet 27 September 2013 9 / 13

10. Package outline

OUTLINE REFERENCES EUROPEAN

Fig. 12. Package outline TO-220AB (SOT78)

Product data sheet 27 September 2013 10 / 13

In no event shall NXP Semiconductors be liable for any indirect, incidental,

Applications — Applications that are described herein for any of these

Terms and conditions of commercial sale — NXP Semiconductors

Product data sheet 27 September 2013 11 / 13

grant, conveyance or implication of any license under any copyrights, patents

Export control — This document as well as the item(s) described herein

Non-automotive qualified products — Unless this data sheet expressly

Translations — A non-English (translated) version of a document is for

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Product data sheet 27 September 2013 12 / 13

© NXP N.V. 2013. All rights reserved

Product data sheet 27 September 2013 13 / 13

Datasheets for electronic components.

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