TD304BH

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

30V 9mΩ @VGS = 10V 57A

TO-252

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
TC = 25 °C 57
Continuous Drain Current ID
TC = 100 °C 37
1
A
Pulsed Drain Current IDM 150
Avalanche Current IAS 29
Avalanche Energy L = 0.1mH EAS 40 mJ
TC = 25 °C 54
Power Dissipation PD W
TC = 100 °C 21
Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 2.3 °C / W
1
Pulse width limited by maximum junction temperature.

REV 1.2 1 2015/1/28

TD304BH
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.2 1.6 2.8
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 20V, VGS = 0V , TJ = 125 °C 10
Drain-Source On-State VGS = 4.5V, ID = 20A 11.5 18
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 20A 7.5 9
Forward Transconductance1 gfs VDS = 5V, ID = 20A 35 S
DYNAMIC
Input Capacitance Ciss 900
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 185 pF
Reverse Transfer Capacitance Crss 120
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω
2 Qg
Total Gate Charge 22
2
VDS = 0.5V(BR)DSS, VGS = 10V
Gate-Source Charge Qgs 5 nC
ID = 20A
2 Qgd
Gate-Drain Charge 6.5
2 td(on)
Turn-On Delay Time 15
2 tr
Rise Time VDS = 15V, 25
nS
Turn-Off Delay Time 2 td(off) ID @ 20A, VGS = 10V, RGEN = 6Ω 60
Fall Time2 tf 18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 57 A
1 VSD IF = 20A, VGS = 0V
Forward Voltage 1.3 V
Reverse Recovery Time trr 23 nS
IF = 20A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 15 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

REV 1.2 2 2015/1/28

TD304BH
N-Channel Enhancement Mode MOSFET

REV 1.2 3 2015/1/28

TD304BH
N-Channel Enhancement Mode MOSFET

REV 1.2 4 2015/1/28

TD304BH
N-Channel Enhancement Mode MOSFET

REV 1.2 5 2015/1/28