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SILICON MULTI-EPITAXIAL

NPN TRANSISTOR

2N6277
• High VCEO.
• High DC Current Gain, hFE.
• Low Collector-Emitter Saturation Voltage, VCE(sat).
• Fast Switching.
• Hermetic TO3 Metal package.
• Ideally suited for Power Amplifier and Switching Applications.
• Screening Options Available

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


VCBO Collector – Base Voltage 180V
VCEO Collector – Emitter Voltage 150V
VEBO Emitter – Base Voltage 6V
IC Continuous Collector Current 50A
ICM Peak Collector Current 100A
IB Base Current 20A
PD Total Power Dissipation at TC = 25°C 250W
Derate Above 25°C 1.43W/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C

THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJC Thermal Resistance, Junction To Case 0.7 °C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8537
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Issue 1
Page 1 of 3
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6277
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min. Typ Max. Units
V(BR)CEO
(1) Collector-Emitter IC = 10mA 150 V
Breakdown Voltage
ICEO Collector Cut-Off Current VCE = 75V IB = 0 50
µA
VCE = 180V VBE = -1.5V 10
ICEX Collector Cut-Off Current
TA = 150°C 1.0 mA
IEBO Emitter Cut-Off Current VEB = 6V IC = 0 100
µA
ICBO Collector Cut-Off Current VCB = 180V IE = 0 10
IC = 1.0A VCE = 4V 50
IC = 20A VCE = 4V 30 120
hFE
(1) Forward-current transfer
ratio TA = -55°C 10
IC = 50A VCE = 4V 10
IC = 20A IB = 2A 1.0
VCE(sat)
(1) Collector-Emitter Saturation
Voltage IC = 50A IB = 10A 3.0
IC = 20A IB = 2A 1.8 V
VBE(sat)
(1) Base-Emitter Saturation
Voltage IC = 50A IB = 10A 3.5
VBE(on) Base-Emitter On Voltage IC = 20A VCE = 4V 1.8

DYNAMIC CHARACTERISTICS
Small signal forward-current IC = 1.0A VCE = 10V
| hfe | 2 12
transfer ratio f = 10MHz
VCB = 10V IE = 0
Cobo Output Capacitance 600 pF
f = 1.0MHz
IC = 20A VCC = 80V
ton Turn-On Time 0.5
IB1 = 2A
µs
IC = 20A VCC = 80V
toff Turn-Off Time 1.6
IB1 = - IB2 = 2A

Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8537
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Issue 1
Page 2 of 3
SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6277
MECHANICAL DATA
Dimensions in mm (inches)

3 9 .9 5 (1 .5 7 3 )
m a x .

3 0 .4 0 (1 .1 9 7 )
3 0 .1 5 (1 .1 8 7 )

1 7 .1 5 (0 .6 7 5 )
1 6 .6 4 (0 .6 5 5 )

4 .0 9 (0 .1 6 1 )
3 .8 4 (0 .1 5 1 )
d ia .
2 p lc s .
2

2 6 .6 7 (1 .0 5 0 )
1 1 .1 8 (0 .4 4 0 )
1 0 .6 7 (0 .4 2 0 )

m a x .
1

2 0 .3 2 (0 .8 0 0 )
1 8 .8 0 (0 .7 4 0 )
d ia . 7 .8 7 (0 .3 1 0 )
6 .9 9 (0 .2 7 5 )
1 .7 8 (0 .0 7 0 )
1 .5 2 (0 .0 6 0 )

1 2 .0 7 (0 .4 7 5 )
1 1 .3 0 (0 .4 4 5 )

1 .5 7 (0 .0 6 2 )
1 .4 7 (0 .0 5 8 )
d ia .
2 p lc s .

TO3 (TO-204AE)

Pin 1 - Base Pin 2 - Emitter Case - Collector

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 8537
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Issue 1
Page 3 of 3