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TO-247 (IXFH)
Symbol Test Conditions Maximum Ratings
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns G = Gate D = Drain
S = Source TAB = Drain
TJ ≤ 150°C, RG = 4 Ω
PD TC = 25°C 600 W Features
TJ -55 ... +150 °C
z
TJM 150 °C International standard packages
z
Tstg -55 ... +150 °C Unclamped Inductive Switching (UIS)
rated
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C z
Low package inductance
- easy to drive and to protect
Md Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-264 10 g Advantages
z
Symbol Test Conditions Characteristic Values Easy to mount
z
(TJ = 25°C, unless otherwise specified) Min. Typ. Max. Space savings
z
High power density
VDSS VGS = 0 V, ID = 250 µA 300 V
Ciss 6300 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 950 pF
C rss 190 pF
td(on) 25 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 24 ns Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
td(off) RG = 3.3 Ω (External) 96 ns
tf 25 ns Dim. Millimeter Inches
Min. Max. Min. Max.
Qg(on) 180 nC A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 44 nC A2 2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
Qgd 90 nC b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
RthJC 0.21 K/W C .4 .8 .016 .031
RthCK (TO-247) 0.21 K/W D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
(TO-264) 0.15 K/W
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
Source-Drain Diode Characteristic Values ∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
(TJ = 25°C, unless otherwise specified)
R 4.32 5.49 .170 .216
Symbol Test Conditions Min. typ. Max. S 6.15 BSC 242 BSC
IS VGS = 0 V 88 A
TO-264 AA Outline
ISM Repetitive 220 A
t rr IF = 25 A 100 200 ns
-di/dt = 100 A/µs
QRM VR = 100 V 600 nC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
IXFH 88N30P
IXFK 88N30P
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
90 200
VGS = 10V VGS = 10V
80 180
9V 9V
8V 160
70
140 8V
60
I D - Amperes
I D - Amperes
120
50
100 7V
7V
40
80
30
60
20 6V 40 6V
10 20
5V 5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 18 20
V D S - Volts V D S - Volts
60 7V 2.2
I D - Amperes
2
50
1.8
I D = 88A
40 1.6
6V 1.4 I D = 44A
30
1.2
20 1
5V 0.8
10
0.6
0 0.4
0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150
V D S - Volts TJ - Degrees Centigrade
2.6 TJ = 125ºC 70
I D - Amperes
2.4 60
2.2
50
2
1.8 40
1.6 30
1.4
20
1.2 TJ = 25ºC
10
1
0.8 0
0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150
I D - Amperes TC - Degrees Centigrade
90
140
TJ = -40ºC
80
120 25ºC
70 125ºC
g f s - Siemens
I D - Amperes
100 60
80 50
40
60
TJ = 125ºC 30
40 25ºC
20
-40ºC
20 10
0 0
4 4.5 5 5.5 6 6.5 7 7.5 8 0 20 40 60 80 100 120 140 160 180
V G S - Volts I D - Amperes
9 VDS = 150V
240
I D = 44A
8
I G = 10mA
200 7
I S - Amperes
VG S - Volts
6
160
5
120
4
TJ = 125ºC 3
80
TJ = 25ºC 2
40
1
0 0
0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 180
V S D - Volts Q G - nanoCoulombs
25µs
I D - Amperes
100 100µs
C oss 1ms
1000
10ms
10 DC
f = 1MHz C rss
100 1
0 5 10 15 20 25 30 35 40 10 100 1000
V D S - Volts V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 88N30P
IXFK 88N30P
1.00
R(th) J C - ºC / W
0.10
0.01
1 10 1 00 1000
Puls e W idth - millis ec onds