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PolarHTTM HiPerFET IXFH 88N30P VDSS = 300 V

IXFK 88N30P ID25 = 88 A


Power MOSFET
RDS(on) = 40 mΩΩ
trr ≤ 200 ns
N-Channel Enhancement Mode
Fast Intrinsic Diode

Preliminary Data Sheet

TO-247 (IXFH)
Symbol Test Conditions Maximum Ratings

VDSS TJ = 25°C to 150°C 300 V


VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V

VGS Transient ±20 V D (TAB)


VGSM Continuous ±30 V

ID25 TC = 25°C 88 A TO-264 (IXFK)


ID(RMS) External lead current limit 75 A
IDM TC = 25°C, pulse width limited by TJM 220 A
IAR TC = 25°C 60 A
EAR TC = 25°C 60 mJ G
D (TAB)
EAS TC = 25°C 2.0 J S

dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns G = Gate D = Drain
S = Source TAB = Drain
TJ ≤ 150°C, RG = 4 Ω
PD TC = 25°C 600 W Features
TJ -55 ... +150 °C
z
TJM 150 °C International standard packages
z
Tstg -55 ... +150 °C Unclamped Inductive Switching (UIS)
rated
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C z
Low package inductance
- easy to drive and to protect
Md Mounting torque 1.13/10 Nm/lb.in.

Weight TO-247 6 g
TO-264 10 g Advantages

z
Symbol Test Conditions Characteristic Values Easy to mount
z
(TJ = 25°C, unless otherwise specified) Min. Typ. Max. Space savings
z
High power density
VDSS VGS = 0 V, ID = 250 µA 300 V

VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V

IGSS VGS = ±20 VDC, VDS = 0 ±100 nA

IDSS VDS = VDSS 25 µA


VGS = 0 V TJ = 125°C 250 µA

RDS(on) VGS = 10 V, ID = 0.5 ID25 40 mΩ


Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

© 2004 IXYS All rights reserved DS99216(12/04)


IXFH 88N30P
IXFK 88N30P
TO-247 AD Outline
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 50 S
1 2 3

Ciss 6300 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 950 pF
C rss 190 pF

td(on) 25 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 24 ns Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
td(off) RG = 3.3 Ω (External) 96 ns
tf 25 ns Dim. Millimeter Inches
Min. Max. Min. Max.
Qg(on) 180 nC A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 44 nC A2 2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
Qgd 90 nC b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
RthJC 0.21 K/W C .4 .8 .016 .031
RthCK (TO-247) 0.21 K/W D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
(TO-264) 0.15 K/W
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
Source-Drain Diode Characteristic Values ∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
(TJ = 25°C, unless otherwise specified)
R 4.32 5.49 .170 .216
Symbol Test Conditions Min. typ. Max. S 6.15 BSC 242 BSC

IS VGS = 0 V 88 A
TO-264 AA Outline
ISM Repetitive 220 A

VSD IF = IS, VGS = 0 V, 1.5 V


Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t rr IF = 25 A 100 200 ns
-di/dt = 100 A/µs
QRM VR = 100 V 600 nC

Dim. Millimeter Inches


Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
IXFH 88N30P
IXFK 88N30P
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
90 200
VGS = 10V VGS = 10V
80 180
9V 9V
8V 160
70
140 8V
60
I D - Amperes

I D - Amperes
120
50
100 7V
7V
40
80
30
60
20 6V 40 6V
10 20
5V 5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 18 20
V D S - Volts V D S - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Norm alized to 0.5 ID25


@ 125ºC Value vs. Junction Tem perature
90 3
VGS = 10V 2.8
80 VGS = 10V
9V
2.6
70 8V
2.4
R D S (on) - Normalized

60 7V 2.2
I D - Amperes

2
50
1.8
I D = 88A
40 1.6
6V 1.4 I D = 44A
30
1.2
20 1

5V 0.8
10
0.6
0 0.4
0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150
V D S - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case


0.5 ID25 Value vs. ID Tem perature
3.4 100
3.2 VGS = 10V 90
3
80
2.8
R D S (on) - Normalized

2.6 TJ = 125ºC 70
I D - Amperes

2.4 60
2.2
50
2
1.8 40

1.6 30
1.4
20
1.2 TJ = 25ºC
10
1
0.8 0
0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150
I D - Amperes TC - Degrees Centigrade

© 2004 IXYS All rights reserved


IXFH 88N30P
IXFK 88N30P

Fig. 7. Input Adm ittance Fig. 8. Transconductance


160 100

90
140
TJ = -40ºC
80
120 25ºC
70 125ºC

g f s - Siemens
I D - Amperes

100 60

80 50

40
60
TJ = 125ºC 30
40 25ºC
20
-40ºC
20 10

0 0
4 4.5 5 5.5 6 6.5 7 7.5 8 0 20 40 60 80 100 120 140 160 180
V G S - Volts I D - Amperes

Fig. 9. Source Current vs.


Fig. 10. Gate Charge
Source-To-Drain Voltage
280 10

9 VDS = 150V
240
I D = 44A
8
I G = 10mA
200 7
I S - Amperes

VG S - Volts

6
160
5
120
4
TJ = 125ºC 3
80

TJ = 25ºC 2
40
1

0 0
0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 180
V S D - Volts Q G - nanoCoulombs

Fig. 12. Forw ard-Bias


Fig. 11. Capacitance Safe Operating Area
10000 1000
TJ = 150ºC
R DS(on) Limit TC = 25ºC
C iss
Capacitance - picoFarads

25µs
I D - Amperes

100 100µs

C oss 1ms
1000
10ms

10 DC

f = 1MHz C rss

100 1
0 5 10 15 20 25 30 35 40 10 100 1000
V D S - Volts V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 88N30P
IXFK 88N30P

Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce

1.00
R(th) J C - ºC / W

0.10

0.01
1 10 1 00 1000
Puls e W idth - millis ec onds

© 2004 IXYS All rights reserved

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