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December 2000 Issue Artech Books Email article Print Article Contact Editor
Technical Feature
Jwo-Shiun Sun
Department of Electronic Engineering
National Taipei University of Technology
Taiwan, ROC
Jier-Chih Hsieh
Department of Engineering and System Science
National Tsing Hua University
Taiwan, ROC
Due to its desirable properties such as small size, low cost and good
temperature stability, a DR not only acts as a frequency determination
element but also offers high stability. 1,2 Analysis methods of the inner
electromagnetic properties of applied DR devices such as the perfect
magnetic conducting wall method,3 the moment method based on the
surface integral techniques4,5 and general mode matching approaches6,7
have been studied. Although the E-field and H-field attributes inside a
microwave DRF are hard to observe, an accurate analysis of the
overall inhomogeneous structure is inevitably required for practical
design and application considerations.
With the advancement of computer hardware and software, numerical
techniques enable us to perform more rigorous and complicated
analysis on 3D structures. Two- and three-dimensional finite-element
methods applied for microwave DRF simulation have been previously
reported.8,9 In those articles, DRFs coupled by coaxial probes were
numerically simulated in the TM01* mode with a cylindrical DR placed
along the central axis. In addition, a 3D FEM simulation of a DR
coupled to microstrip lines in a DRF was studied by Chuang, et al. 10
for various dielectric constants.
This article deals with excitation in the TE01* mode, the highest Q
value among all resonant modes of a cylindrical DR coupled to
microstrip lines. The Ansoft ® 3D FEM CAD tool of the high
frequency structure simulator (HFSS) was used to compute the 3D
structure of the DRF.
The top view of the DRF, shown in Figure 1, indicates two DRs
coupled to two straight microstrip lines in a rectangular metallic
enclosure. The parameters of the designed DRF are listed in Table 1.
Element values of the designed DRF are g0 = 1.0000, g1 = 1.0378, g2 =
0.6745 and g3 = 1.5386 with coupling parameters of Qe in = 58.38, k12 =
0.02125 and Qe out = 58.38,2 where Qe in , Qe out and k12 are the external
Q factors at the input and output ports and the coupling coefficient
between two DRs, respectively.
DRF 3D FEM SIMULATIONS
References
2. J.S. Sun and Y.L. Huang, "Design and Implementation of an X-Band DR Bandpass Filter," Microwave
Journal, Vol. 42, No. 11, September 1999, pp. 92103.
3. Okaya and Barash, "The Dielectric Microwave Resonator," Proceedings of the IRE, Vol. 50, October
1962, pp. 20812092.
4. A.W. Glisson, D. Kajfez and J. James, "Evaluation of Modes in Dielectric Resonators Using a Surface
Integral Equation Formulation," IEEE Transactions on Microwave Theory and Techniques, Vol. 31,
December 1983, pp. 10231029.
5. A.W. Glisson and D.R. Wilton, "Simple and Efficient Numerical Methods for Problems of
Electromagnetic Radiation and Scattering from Surfaces," IEEE Trans. Antennas Propagat., Vol. 28,
September 1980, pp. 593603.
6. J. Van Bladel, "On the Resonances of a Dielectric Resonator of Very High Permittivity," IEEE
Transactions on Microwave Theory and Techniques, Vol. 23, February 1979, pp. 195208.
7. M. Verplanken and J. Van Bladel, "The Electric Dipole Resonances of Ring Resonances of Very High
Permittivity," IEEE Transactions on Microwave Theory and Techniques, Vol. 24, February 1976, pp. 108-
112.
8. J. Cousty, S. Verdeyme, M. Aubourg and P. Guillon, "Finite Elements for Microwave Device
Simulation: Application to Microwave Dielectric Resonator Filters," IEEE Transactions on Microwave
Theory and Techniques, Vol. MTT-40, No. 5, May 1992, pp. 925932.
9. D. Baillargent, S. Verdeyme, M. Aubourga and P. Guillon, "CAD Applying the Finite-element Method
for Dielectric Resonator Filters," IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-
46, No.1, January 1998, pp. 1017.
10. H.R. Chuang, J.W. Huang, C.C. Wei and J.C. Chang, "3D DEM Simulation and Experimental
Measurements of Microstrip Dielectric Resonator Filters," Microwave and Optical Technology Letters,
Vol. 8, No. 4, March 1995, pp. 196200.
Jwo-Shiun Sun received his BS degree in Electrical Engineering from National Cheng
Kung University (NCKU) in 1983. After graduation, he served in the army as a
communications officer for two years. He received the MS degree and PhD degree in EE
from NCKU in 1988 and in 1992, respectively. Sun is currently a professor with the
Dept. of Electronic Engineering in National Taipei University of Technology, Taipei,
Taiwan. His research interests are in the fields of microwave devices and circuits,
microwave dielectric materials, EM-wave and analyses, and satellite mobile
communication.
Jier-Chih Hsieh was born in Taipei, Taiwan, R.O.C, in 1972. He received the BS and MS
EECS degrees from National Chiao Tung University in 1994 and 1996, respectively. He
was a circuit design engineer for Motorola, Taipei, in 1997. He is now a PhD program
student in the Dept. of Engineering and System Science, National Tsing Hua University.
His studies involve microwave circuit devices and their applications in
telecommunication systems.