477
A Novel Approach for Effective Import
Characteristics into CAD for Large Signal
Hao Qi. Johannes Benedikt and Paul Tasker
School of Engineering, Cardiff University, Cardiff,
Abstract - This paper introduces a new approach allowing
for the direct utilization of large signal measurement data in the
PA CAD design process. A model, which we term as "truth look-
up model", has been developed to import non-linear
measurement data into a non-linear CAD simulator. Its
implementation in Agilent ADS simulator has been verified on
several different types of high frequency transistors. Through
correct formulation of the "truth look-up model" data sets it has
been found that this approach can accurately predict the
nonlinear behavior of devices under CW excitations, even when
interpolation or extrapolation of measured data is required.
Furthermore, the model also demonstrates its potential for
predicting the behavior of devices under multi-tone signal
excitations.
Index Terms - Design automation, measurement system data
handling, microwave measurements, nonlinear systems, power
amplifiers.
I. INTRODUCTION
Nonlinear models suitable for large signal power amplifier
design have been researched for quite a long time. Many types
of models, such as empirical models, Volterra models and
table-based model, have been proposed. However, large-signal
models still struggle to achieve the right balance between
accuracy, complexity, and the time required to develop them.
Consequently, the employment of large-signal models is still
lacking the enormous success of small-signal models.
Recent advances in nonlinear large-signal RF measurement
systems [I]-[2] have allowed the direct measurement of
nonlinear currents and voltages. How to use the nonlinear data
in CAD tools or models for power amplifier design has
become a hot topic for research. One approach, proposed by
Verspecht [3]-[4], shows that the large signal S-parameters
can be calculated as a function of input power by using large
signal measurement data. More recently T-parameters have
been introduced to account for the dependence of the
behaviour on the load impedance. However, the approach
shown in [3] doesn't provide a generalized way to utilize the
nonlinear measurement data in the CAD design, because the
formulation of the dependence of the parameters on the load
impedance is merely an approximation. Actually the extracted
large signal 5- and T-parameters are still found to be a weak
function of load. Therefore, the Verspecht' s approach in [3]
will become complex when dealing with measurement data
covering a large area of the Smith Chart -for accurate
prediction of performance the dependence of model
parameters on the load impedance has to be taken into account.
0-7803-9542-5/06/$20.00 ©2006 IEEE
of Nonlinear Device
Power Amplifier Design
CF24 3TF, UK. Email QIH@cf.ac.uk
Hence, an alternative approach is required for power amplifier
design applications in which the load impedance should be
varying -the device large signal behaviour needs to be
accurately predicted at each load impedance point.
This paper introduces a new approach for the direct
utilization of large-signal measurement data, overcoming the
limitations in Verspecht' s approach. A model termed as "truth
look-up model" has been developed for importing non-linear
data into a non-linear CAD simulator. The truth model
employs the load impedance as one of independent input
variables to look up model coefficients and consequently
provide excellent accuracy for simulations at each load
impedance point. The truth look-up model also has the ability
to accurately predict the large signal behaviour of the device
off the measurement grid by interpolation and extrapolation.
II. APPROACH DESCRIPTION
The nonlinear large-signal measurement data comprises the
full non-linear response of the device under test and therefore
can be directly utilized for CAD based design.
The "truth look-up model" has been developed for
formulating and importing the measurement data into CAD
tools. The model is defined within frequency domain.
VIN(fl TruthModel VOUTMO~ RLOAD
Fig. 1. Definition of the truth model in frequency domain
For specific load impedance ZLOAD, the current components
at both ports are defined as
I, (ct) = AO dG(co) +IA, V.J7(co)) dG(ct- 2zr n. fo) (1)
n=l
(2)
Where the VIN is the input CW stimulus, n is the order of
harmonics, fj,s the fundamental frequency. A,, and B,, are the
DC components.
As shown in (1) - (2), coefficients A,, and B.1 are defined to
relate the current spectra I1 and 12 to the input voltage stimulus.

Since the current and voltage spectra will vary as the external
conditions such as VIN, ZLOAD and bias (i.e. VDC IN and VDCOUT)
change, the coefficients A1 and B. can be considered as a
function of magnitude of stimulus voltage, complex load
impedance, and bias point. If we consider each harmonic
individually, two matrices can be derived:
I 4 0 0 Of 1 I201 Bo
II I 0 40 0 VfV 21J 0
Ir2 0° 4 0 VIN2 I22 0
LI0~J[ °- _°
° _VIN3_
_l0 I23 V0 0
V 3
,
Regarding the I, in the matrices, k is the port index and n is
the harmonic index. A1 and B1 can be expressed as:
(J)IV (
j=I n |VNf rLd
Bn = I2h(nfo
/ (f)) _F V v
F2(|VIN|,FLoad,VDC
The A11 and B1 are calculated by using measurement data
and then will be saved into a data table linking to the CAD
simulator. For any given stimulus voltage, load, and any given
bias point, the simulator should be able to look up or
interpolate the corresponding A11 and B1 and consequently
work out the port currents by using (1) - (2). Therefore, it can
be considered that our approach looks up the port currents
indirectly through A1 and B1 as a function of input voltage,
load impedance, and bias.
Please note voltage and current waves are chosen instead of
scattered waves to define the coefficients A. and B1 in the
truth model. In fact a truth model using scattered waves has
been generated for investigation purpose. The resultant A'.
and B3'. are calculated and the coefficient surfaces over the
load impedance plane are compared to those of A1 and B.. We
have found that the surface smoothness generally looks similar,
which implies that theoretically the truth model should be able
to give the same accuracy regardless of whether v&i waves or
a&b waves were chosen. However when the truth model is
being implemented in ADS, the model using v&i waves has
an advantage due to the easier transformation into a FDD
component. FDD components work with current and voltage
components in frequency domain, which make it a perfect
option for the realization of the truth model using v&i waves.
But for models employing a&b waves extra conversions are
needed.
Another point worthy of mentioning is that the coefficients
A1 or B., which are I1(nfo)/VIN', are looked up instead of 11(nf0)
in the model. Theoretically our approach should give the same
results if 11(nf0) is looked up directly. However, in practice,
scaling the In with the n" power of fundamental input voltage
will smooth the table data significantly and thus make
interpolation function of the truth model more robust. The
significant smoothing effect can be observed by comparing the
478
curves in Fig. 2. Another reason for using 11(nf0)/V1NN is to
make the model coefficients A11 and B. independent of the
reference phase of input stimulus.
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0.06 - co
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111
B3 VS3 30 32 34 36 38 40 42
Input RF power I dBm
Fig. 2. The smoothing effect of scaling the In with the nth power of
VIN' The graph compares the real part of 12(2fo) (dot) with I2(2fo)/VIN2
(solid) obtained on a 100w LDMOS device.
VDC IN X VDC(OUT)
The direct use of non-linear data guarantees an accurate
IN vVDC OUT)). (5) representation of the device characteristics within the CAD
environment, hence increasing the likelihood of a first pass
design - provided the device is simulated under exactly the
same conditions. This requires the stimulus signal and the
impedance environment, presented to the DUT, to match the
ones used during the measurement. It is also worth noting that
by using this approach, the large signal data can be utilized
without any complex post processing or model extraction. It
can be employed within a CAD environment directly after the
large-signal device characterization.
The excessive amount of measurement data to correctly
represent the DUT for all stimuli and impedance conditions is
readily avoided by taking the final application into account.
For instance, LDMOS devices within base station amplifiers
utilize bias conditions which are well specified and known
prior the commencement of the design. Also, often the design
specifications force to design a specific power amplifier mode
of operation, e.g. class-AB, hence allowing the impedance
environment to be narrowed down over which the device
needs to be measured. An important aspect of the direct use of
non-linear data is that the resulting truth look-up model is an
on-demand element, that is, its capabilities are readily
expanded through additional measurements.
III. APPROACH IMPLEMENTATION
This approach has been used to import nonlinear data into
ADS. The nonlinear data in terms of voltage and current
waveforms are obtained from time-domain measurement
system developed at Cardiff University. The DUT is
characterized using a single-tone signal and fundamental
active load pull has been conducted with input power sweeps.
The resultant measurement waveforms are then converted into
spectra in frequency domain. The obtained spectra are used to
directly calculate the coefficients A1 and B1 for different
external conditions. The extracted coefficients are then saved
2
 479

in multi-dimensional mdf file format. The generated mdf table and Marker2 (Both points are indicated in Fig. 3). Fig. 6 and
has five dimensions which correspond to bias, load impedance Fig. 7 show the simulated and measured fundamental output
and the magnitude of input stimulus respectively. characteristics of the device. In addition, it shows the
The "truth look-up model" is realized in ADS using the simulated and measured output second and third harmonic
user-defined FDD component. The tabulated mdf data file is components. Please note for the input power range from 29 to
linked with the model by utilizing the DAC component. The 42 dBm only 7 measured points were used to generate the
implemented model in ADS has the ability to determine the truth model. All these comparisons show very good agreement
impedance of any type of load at the beginning of simulation. between simulated and measured results, which therefore
verify the accuracy of the approach and its robustness to
IV. APPROACH VALIDATION interpolation and extrapolation.
This approach has been successfully validated using CW SimuLlate-d and measure-d OIP voltiage wavefOrM~at M2
large signal measurement data. The validations have been
done on a number of different devices; e.g. 4W pHEMT, 30W
LDMOS and 100W LDMOS devices. Specifically, the
measured and simulated results obtained on a Freescale 100W
LDMOS device will be presented in this section.
The 100W device has been measured by using impedance
transformer in our time domain measurement system [5]. Both
input power sweeps and fundamental load sweeps have been
done at multiple bias conditions for characterizing the device Time Inszec
and the resultant measurement data has been collected. Only a
The clotted grid shbows they-,
small portion of measured Fig. 5. The measured (dot) and simulated (solid) VO. at m2.
measuLred IlbacpII point data
A was used to generate
Used to genebratethe truth the truth model, allowing, Ampolitude bf butpuit harMonics
in this case, the use of the E
mbl6 remaining data set for w
interpolation verification 0
purposes. Simulations on 20 nd...... harmonics..

the dotted measurement 1 0-

grid (Fig. 3) were by 0 3rd harm'onics
default always accurate. -lii0
Fig. 3. Two simulation points: 28 30 32 34 36 38 40 42
mlI &m2. The reference Z0 of Hence only the simulations
Smith Chart is 7.1 ohm off the dotted measurement Fndh-AMental Inpuit Pbowerld8m
data grid (i.e. through cubic spline function) will be
considered in order to investigate the robustness of the Fig. 6. The measured (dot) and simulated (solid) harmonic power
versus fundamental input power.
approach.

80
Simnulaed and measure-d OFP voltage wavefo~rms at Ml 400-
Phase of output harmonics

60- a)
1stharrronics
-0
7-
3rd harmonies
.-.

0
-200- Tdhrmnc
28 30 3'2 I314 3'6 3 40 42
Timeb Insec Fundamental Input Powver IdBm
Fig. 4. The measured (dot) and simulated (solid) Vou at ml.
Fig. 7. The measured (dot) and simulated (solid) harmonic phase
versus fundamental input power.
Fig. 4 (interpolation) and Fig. 5 (extrapolation) compare the
simulated and measured output voltage waveforms when the
device was excited by about 39 dBm input power at Markerl

3
 480

V. APPROACH EXPANDABILITY Another possible way to expand the "truth look-up model"
approach is through increasing the dimensionality of the
This approach can be expanded for broader applications in
model table. For example, the second harmonic load pull data
different ways. Apart from simulations of large signal
can be utilized in the model by increasing the number of table
behaviours under single tone excitation, the "truth look-up
dimensions by two.
model" also has the ability to predict large signal behaviour of
devices under multi-tone excitations. An example of using
"truth look-up model" in two-tone simulations is shown below. VI. CONCLUSION
First, the "truth look-up model" was generated by using the
A novel approach for utilizing nonlinear large signal
approach described in this paper. However, in this case, the
measurement data in CAD tools has been proposed and
CW nonlinear data used to generate the model was obtained
validated through measurement data on several devices under
from a Freescale LDMOS MET model [6] - [7]. The "truth
single-tone excitation. This approach makes it possible to
look-up mode" was then directly utilized in two-tone
rapidly use the measurement data in CAD based power
simulations in ADS. The two-tone simulation results including
amplifier design without any complex data processing
fundamental carrier and IM components were then compared
procedure. The concept developed, termed "truth look-up
to the results obtained directly from MET model simulation
model", has demonstrated its capability for accurate
(Fig. 8 -Fig. 9).
interpolation and extrapolation of measurement data.
A 11'
4
Moreover, the "truth look-up model" has also shown its
potential for correctly predicting the non-linear device
l-

m
E 20- FUrnd~mnhtaI F2 behaviour under modulated stimulus conditions. Further
r- expendabilities of this approach have been shown such as the
utilization of harmonic load-pull data.
0- ........................I.....

1M3 High
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under two-tone signal excitation.