1 Diode Characteristics 16–3

16–74, fig. (a): Assuming than diode is ON, its voltage drop is VD ≈ 0.7V and we expect
a positive ID . Then,
5 − 0.7 − 8 3.7
5 = 10 · ID + 0.7 + 8 7→ =− 60
10 10
Since the current is negative, this is inconsistent with the diode’s characteristics. There-
fore, the diode is OFF, i.e. reversed biased.
16–74, fig. (b): Assuming than diode is ON, its voltage drop is VD ≈ 0.7V and we expect
a positive ID . Then,
100 + 0.7
−0.7 − 100 + 56 · ID = 0 7→ ID = >0
56
A positive current ID is consistent with the assumption that the diode is ON. Therefore,
it is forward biased.
16–74, fig. (c): Let’s assume that the diode is reversed biased, i.e. OFF. Therefore, ID = 0
and the voltage VD across the diode is the same voltage that drops across the 4.7kΩ
connected to ground. This voltage VD is equal to
4.7k
VD = 30 ≈ 19.58V > 0.7V
1k + 1.5k + 4.7k
Therefore, the (VD ; ID ) point does not fall on the diode’s characteristics. This result is
inconsistent with the OFF assumption: therefore, the diode is forward biased, or ON.
16–74, fig. (d): Let’s assume that the diode is reversed biased, i.e. OFF, since this facil-
itates the solution of the problem (there would be a third voltage source if the diode
was ON). Note that the anode of the diode is connected to ground, therefore VD is
represented by an arrows pointing to ground: if the voltage VN at the node between
the 2 resistors is negative, then the diode would be ON. Let’s calculate the voltage VN
then by considering the current I that flows out of the 10V voltage source through the
resistors under the assumption of OFF diode:
10 + 20
10 − 10k · I − 10k · I + 20 = 0 7→ I = = 1.5mA
10k + 10k
The voltage VN at the common node is
VN = 10 − 10k · I = 10 − 15 = −5V
and the voltage across the diode is
VD = 0 − VN = +5V
The point (VD ; ID ) = (5V ; 0A) does not fall on the diode’s characteristics. Therefore,
the assumption of OFF diode is inconsistent with the results – which means that the
diode is forward biased, or ON.

1
16–75, fig. (a): The diode is open since the voltmeter would measure 0.7V if it was ON.
However, the diode ought to be ON and the diode is not working properly1 .

16–75, fig. (b): The diode ought to be ON2 but the voltmeter measures the voltage pro-
vided by the source: the diode is open and it’s not working properly.

16–75, fig. (c): The diode ought to be OFF3 but the voltmeter measures half the voltage
provided by the source. Therefore, the diode is ON and it’s not working properly.

16–75, fig. (d): The diode is OFF4 and no current flows through either the diode or the
resistor. The diode is working properly.

2 DC Operations of BJTs 17–1

Responses to problems #1 to #11, section 17–1

1. Collector current IC = IE − IB = 5.34mA − 0.475mA = 4.865mA

IC 8.23mA
2. Recombination factor αDC = = ≈ 0.947
IE 8.69mA
IC 25mA
3. Current gain βDC = = = 500
IB 0.2mA
4. Base current IB = 0.02 · IE = 0.02 · 30mA = 600µA; collector current IC = IE − IB =
30mA − 0.6mA = 29.4mA

5. With reference to Figure 17–70, assuming that VBE ≈ 0.7V ,

VBB = VBE + RE · IE

where IE is the current through IE . Therefore,

VBB − VBE 2 − 0.7
IE = = = 1.3mA
RE 1000
Since αDC = 0.98, then IC = αDC IE = 0.98 · 1.3mA = 1.274mA and IB = IE − IC =
1.3mA − 1.274mA = 26µA. As a check, IC = βDC · IB = 49 · 26µA = 1.274mA

6. The current IE is the same as above since VBE ≈ 0.7V is independent of the transistor.
Note that
αDC
βDC = = 49
1 − αDC
1
Solve the circuit to prove that the diode is ON.
2
Solve the circuit to prove that the diode is ON.
3
Solve the circuit to prove that the diode is OFF.
4
Solve the circuit to prove that the diode is OFF.

2
 is the nominal value. Since βDC = 100, it means that the value
βDC 100
αDC = = ≈ 0.99
1 + βDC 101
corresponds to a process variations (i.e. the transistor was made and random variations
made αDC turn out 0.99 instead of 0.98, a difference of about (0.99 − 0.98)/0.98 ≈ 1%).
So, instead of using αDC , let’s use βDC :
IE 1.3mA
IE = (1 + βDC ) · IB 7→ IB = = ≈ 12.9µA
1 + βDC 1 + 100
and
IC = βDC · IB ≈ 100 · 12.9µA = 1.29mA
7. The emitter voltage is
VE = RE · IE = 1kΩ · 1.3mA = 1.3V

8. With reference to figure (a), and assuming VBE = 0.7V ,

VBB − VBE 10 − 0.7
IE = = = 930µA
RE 10kΩ
IE 930µA
IB = = ≈ 18.2µA
1 + βDC 50
IC = βDC · IB = 50 · 18.2 ≈ 910µA
VB = VBB = VBE + RE · IE = 10V
VC = VCC = 20V
VE = RE · IE = 10kΩ · 930µA = 9.3V
VCE = VC − VE = 20 − 9.3 = 10.7V
VBC = VB − VC = 10 − 20 = −10V
.
With reference to figure (b), and assuming VBE = 0.7V ,
VBB − VBE 4 − 0.7
VBB = RB · IB + VBE 7→ IB = = ≈ 7µA
RB 4700
IC = βDC · IB ≈ 50 · 7 = 350µA
VE = 0V
VB = VBB − RB · IB = 4 − 4.7kΩ · 7µA ≈ 3.97V
VC = VCC − RC · IC = 24 − 430 · 350µA ≈ 23.85V
VCE = VC − VE ≈ 23.85 − 0 = 23.85V
VBC = VB − VC ≈ 3.97 − 23.85 = −19.88V

3
 9. Assuming VBE ≈ 0.7V ,
VBB − VBE 1 − 0.7
VBB = RB · IB + VBE 7→ IB = = ≈ 13.6µA
RB 22kΩ
IC = βDC · IB ≈ 50 · 13.6µA = 680µA
IE = IB + IC = 13.6 + 680 = 693.6µA

10. With reference to figure 17–73, the equivalent Thevenin of the circuit connected at the
base of the transistor is
R2 10
VBB = VCC = 12 = 3.75V
R1 + R2 10 + 22
R1 R2 10k 22k
RBB = = = 6.875kΩ
R1 + R2 10k + 22k
Then, remembering that IE = (1 + βDC ) IB ,

VBB = RBB IB + VBE + RE (1 + βDC ) IB

from which IB can be calculated to be

VBB − VBE 3.75 − 0.7
IB = = ≈ 180µA
RBB + (1 + βDC ) RE 6.875k + 101 · 100

IE = (1 + βDC ) IB ≈ 101 · 180µA ≈ 18.2mA

IC = βDC IB ≈ 100 · 180µA ≈ 18mA
VB = VBB − RBB IB ≈ 3.75 − 6875 · 180µA ≈ 2.5V
VC = VCC − RC IC ≈ 12 − 470 · 18mA ≈ 3.54V
VE = RE IE ≈ 100 · 18.2mA ≈ 1.82V

11. From the results found above,

VCE = VC − VE ≈ 3.54 − 1.82 ≈ 1.72V

The Q–point coordinates are

(VCE ; IC ) = (1.72V ; 18mA)