PD - 93755B

IRLML6402
HEXFET® Power MOSFET
l Ultra Low On-Resistance
D
l P-Channel MOSFET
l SOT-23 Footprint VDSS = -20V
l Low Profile (<1.1mm)
l Available in Tape and Reel G
RDS(on) = 0.065Ω
l Fast Switching
S
Description
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.

A thermally enhanced large pad leadframe has been incorporated

into the standard SOT-23 package to produce a HEXFET Power Micro3
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.7
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.2 A
IDM Pulsed Drain Current  -22
PD @TA = 25°C Power Dissipation 1.3
W
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
EAS Single Pulse Avalanche Energy„ 11 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambientƒ 75 100 °C/W

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IRLML6402

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, I D = -1mA ‚
––– 0.050 0.065 VGS = -4.5V, ID = -3.7A ‚
RDS(on) Static Drain-to-Source On-Resistance Ω
––– 0.080 0.135 VGS = -2.5V, ID = -3.1A ‚
VGS(th) Gate Threshold Voltage -0.40 -0.55 -0.95 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 6.0 ––– ––– S VDS = -10V, ID = -3.7A ‚
––– ––– -1.0 VDS = -20V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
Qg Total Gate Charge ––– 8.0 12 ID = -3.7A
Qgs Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -5.0V ‚
td(on) Turn-On Delay Time ––– 350 ––– VDD = -10V
tr Rise Time ––– 48 ––– ID = -3.7A
ns
td(off) Turn-Off Delay Time ––– 588 ––– RG = 89Ω
tf Fall Time ––– 381 ––– RD = 2.7Ω
Ciss Input Capacitance ––– 633 ––– VGS = 0V
Coss Output Capacitance ––– 145 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -1.3

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -22
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V ‚
trr Reverse Recovery Time ––– 29 43 ns TJ = 25°C, IF = -1.0A
Qrr Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/µs ‚

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
„ Starting TJ = 25°C, L = 1.65mH
RG = 25Ω, IAS = -3.7A.

** For recommended footprint and soldering techniques refer to application note #AN-994.
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 IRLML6402

100 VGS
100 VGS
TOP -7.00V TOP -7.00V
-5.00V -5.00V
-4.50V -4.50V
-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

-3.50V -3.50V
-3.00V -3.00V
-2.70V -2.70V
-2.50V -2.50V
BOTTOM -2.25V BOTTOM -2.25V

10 10
-2.25V
-2.25V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 150 °C
1 1
0.1 1 10 100 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
ID = -3.7A
RDS(on) , Drain-to-Source On Resistance
-I D , Drain-to-Source Current (A)

TJ = 25 ° C 1.5
(Normalized)

TJ = 150 ° C
1.0

0.5

V DS = -15V
20µs PULSE WIDTH VGS = -4.5V
10 0.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRLML6402

1000 10
VGS = 0V, f = 1 MHZ ID = -3.7A
Ciss = Cgs + Cgd, Cds SHORTED

-VGS , Gate-to-Source Voltage (V)

VDS =-10V
Crss = Cgd
800 8
Coss = Cds + Cgd
C, Capacitance(pF)

Ciss
600 6

400 4

Coss
200 2
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
0 0
0 3 6 9 12
1 10 100
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)

-IID , Drain Current (A)

10us
10 10

100us
TJ = 150 ° C

1ms
1 1
TJ = 25 ° C
10ms
TC = 25 ° C
TJ = 150 ° C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100
-VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRLML6402

4.0 25
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP -1.7A
-3.0A
20 BOTTOM -3.7A
3.0
-ID , Drain Current (A)

15

2.0

10

1.0
5

0.0 0
25 50 75 100 125 150 25 50 75 100 125 150
TC , Case Temperature ( °C) Starting TJ , Junction Temperature ( °C)

Fig 9. Maximum Drain Current Vs. Fig 10. Maximum Avalanche Energy
Case Temperature Vs. Drain Current

1000
Thermal Response (Z thJA )

100
D = 0.50

0.20
0.10
10
0.05
PDM
0.02
0.01 t1
1 SINGLE PULSE
(THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLML6402

RDS ( on ) , Drain-to-Source On Resistance ( Ω )

0.14 0.20
RDS(on) , Drain-to -Source Voltage ( Ω )

VGS = -2.5V
0.12
0.16

0.10
0.12
0.08

Id = -3.7A 0.08
0.06 VGS = -4.5V

0.04
0.04

0.02 0.00
2.0 3.0 4.0 5.0 6.0 7.0 0 5 10 15 20 25 30
-VGS, Gate -to -Source Voltage ( V ) -I D , Drain Current ( A )

Fig 12. Typical On-Resistance Vs. Fig 13. Typical On-Resistance Vs.
Gate Voltage Drain Current

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 IRLML6402

Package Outline
Micro3ä
Dimensions are shown in millimeters (inches)

D LEAD ASSIGNMENTS INCHES MILLIMETERS

3 DIM
-B- 1 - GATE MIN MAX MIN MAX
2 - SOURCE A .032 .044 0.82 1.11
3 - DRAIN A1 .001 .004 0.02 0.10

3 3 B .015 .021 0.38 0.54

E H
C .004 .006 0.10 0.15
-A- 0.20 ( .008 ) M A M
1 2 D .105 .120 2.67 3.05
e .0750 BASIC 1.90 BASIC
e1 .0375 BASIC 0.95 BASIC
e E .047 .055 1.20 1.40
H .083 .098 2.10 2.50
e1
L .005 .010 0.13 0.25
θ 0° 8° 0° 8°
A θ
MINIMUM RECOMMENDED FOOTPRINT
-C- 0.008 (.003) 0.80 ( .031 )
A1 L C 3X
B 3X
3X 3X 0.90
0.10 (.004) M C AS B S ( .035 ) 2.00
3X ( .079 )

NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH. 0.95 ( .037 )
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. 2X

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IRLML6402
Part Marking Information
Micro3ä
Notes : T his part marking information applies to devices produced before 02/26/2001
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
EXAMPLE: T HIS IS AN IRLML6302
WORK
YEAR Y WEEK W
2001 1 01 A
PART NUMBER
2002 2 02 B
2003 3 03 C
1994 4 04 D
DATE 1995 5
CODE 1996 6
1997 7
1998 8
1999 9
2000 0 24 X
PART NUMBER CODE REFERENCE:
25 Y
1A = IRLML2402 26 Z
1B = IRLML2803
WW = (27-52) IF PRECEDED BY A LETT ER
1C = IRLML6302
1D = IRLML5103 WORK
YEAR Y WEEK W
1E = IRLML6402
1F = IRLML6401 2001 A 27 A
2002 B 28 B
1G = IRLML2502
2003 C 29 C
1H = IRLML5203 1994 D 30 D
1995 E
1996 F
DAT E CODE EXAMPLES: 1997 G
1998 H
YWW = 9503 = 5C 1999 J
YWW = 9532 = EF 2000 K 50 X
51 Y
52 Z

Notes : T his part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECE DED BY LAS T DIGIT OF CALENDAR YEAR
WORK
Y = YEAR YEAR Y WEEK W
W = WEEK 2001 1 01 A
PART NUMBER
2002 2 02 B
2003 3 03 C
1994 4 04 D
1995 5
LOT
1996 6
CODE
1997 7
1998 8
1999 9
2000 0 24 X
PART NUMBER CODE REFERENCE:
25 Y
A= IRLML2402 26 Z
B= IRLML2803 W = (27-52) IF PRECEDED BY A LETTER
C= IRLML6302
D= IRLML5103 WORK
YEAR Y WEEK W
E= IRLML6402
F= IRLML6401 2001 A 27 A
2002 B 28 B
G= IRLML2502
2003 C 29 C
H= IRLML5203 1994 D 30 D
1995 E
1996 F
1997 G
1998 H
1999 J
2000 K 50 X
51 Y
52 Z

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 IRLML6402
Tape & Reel Information
Micro3ä
Dimensions are shown in millimeters (inches)
2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )
1.95 ( .077 ) 1.5 ( .060 )
1.85 ( .072 ) 1.12 ( .045 )
4.1 ( .161 )
3.9 ( .154 ) 1.65 ( .065 )

TR 3.55 ( .139 ) 8.3 ( .326 )

3.45 ( .136 ) 7.9 ( .312 )

FEED DIRECTION 4.1 ( .161 )

3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )
0.9 ( .036 ) 0.25 ( .010 )

178.00
( 7.008 )
MAX.

9.90 ( .390 )
8.40 ( .331 )

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/03
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