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User Manual TV Power

Demoboard TEA8818DB1440
TEA8818 + TEA1995 130W 13V and 90V power supply
Rev. 0.01— 23 june 2016

Document information
Info Content
Keywords TEA88181T, TEA88182T, TEA1995T, 130W, LLC, resonant, half bridge,
PFC, controller, converter, burst mode, power supply, demo board, high
efficiency.
Abstract The TEA88181T is a digital resonant LLC controller and the TEA88182T
is a PFC converter, both connected via digital link as combo devices.
Optionally these two IC’s together can be combined with the SR controller
TEA1995T for the low voltage output of secondary side, which results in a
high efficiency resonant converter.
This document describes such a resonant power supply design, with
nominal output power of 130 W (13V/5A + 90V/0.7A).
It operates in normal mode for high and medium power levels, in low
power mode at medium and low power levels and in burst mode at (very)
low power levels.
Low power mode and burst mode operation provides a reduction of
power losses, resulting in a higher efficiency at lower output power levels.
Power levels for switching over from one mode to another mode can be
selected by the end customer by adjusting component values.
The efficiency at nominal power is well above 88%.
No load power consumption is well below 100 mW.
At 250mW (on 13V) output power, the input power is lower than 500 mW
(complies with EuPlot6).
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Revision history
Rev Date Description
0.0 11-04-2016 First draft
0.1 23-06-2016 Second draft

Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
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1. Introduction

Fig 1. General warning

1.1 Scope of this document


This document describes a 130 W power supply board using the TEA88181, TEA88182
and TEA1995. A functional description is given, supported by a set of preliminary
measurements to show the main characteristics.

1.2 TEA88181T and TEA88182T


The TEA88181T is a half bridge resonant converter (HBC) and the TEA88182 is a
controller for Power Factor Correction (PFC).
Both IC’s provide drive functionality for the related discrete MOSFET(s).
The resonant controller part (TEA88181T) is a high voltage controller for zero voltage
switching LLC resonant converter. The resonant controller includes a high voltage level
shift circuit, high voltage internal starting up switch and several protection features such
as over current protection, open loop protection, capacitive mode protection and a
general purpose latched protection input.
In addition to the resonant controller, the TEA88182T contains a Power Factor Correction
(PFC) controller. The efficient operation of the PFC is obtained by functions such as
quasi-resonant operation at high power levels and quasi-resonant operation with valley
skipping at lower power levels. Over current protection, overvoltage protection and
demagnetization sensing, ensures safe operation in all conditions.
The TEA88181T and TEA88182 are working together in close cooperation; in this way it
is possible to improve the overall performance even further.
Using the TEA1995 as synchronized rectifier controller at the secondary side allows
MOSFET’s instead of rectifying diodes, the overall efficiency of the complete system will
benefit even more.
The combination of PFC, resonant controller and SR controller makes these devices very
suitable for all kind of applications, especially when a high efficiency is required over the
whole power range, from no load to maximum output load.

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Fig 2. Pin configuration of the TEA88181T (HBC) and the TEA88182T (PFC)

1.3 TEA1995T
The TEA1995T is the first product of a new generation of Synchronous Rectifier (SR)
controller ICs for switched mode power supplies. It incorporates an adaptive gate drive
method for maximum efficiency at any load.
The TEA1995T is a dedicated controller IC for synchronous rectification on the
secondary side of resonant converters. It has two driver stages for driving the SR
MOSFETs, which rectify the outputs of the central tap secondary transformer windings.
The two gate driver stages have their own sensing inputs and operate independently.

Fig 3. Pin configuration of the TEA1995T (SR)

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1.4 Setup of the TEA8818DB1440 130W 13V/90V power supply

Fig 4. TEA88181T, TEA88182T and TEA1995T prototype demo board 130W

The board can operate at a mains input voltage between 90V and 264V (universal
mains).
The evaluation board contains two sub-circuits:
• A Power Factor Converter (PFC) of BCM-type
• A Half Bridge Converter (HBC) of resonant LLC-type
Both converter controllers are working together in order to optimize the total supply
behavior.
The purpose of the board is to show the operation of the combination of converters
(TEA88181, TEA88182 and TEA1995) in a multiple output supply including all modes.
The performance passes general standards including the EuP lot6 requirements and can
be used a starting point for further development.

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2. Power supply specification

Table 1. Input specification


Symbol Description Condition Specification Units

Vi input voltage - 90 to 264 V

fi input frequency - 47 to 64 Hz

Pi(no load) no load input power at 230 V , 50 Hz < 100 mW

Table 2. Output specification


Symbol Description Condition Specification Unit

VOUT1 output voltage - 13 V

IOUT1 continuous output See Error! Reference source not 0 to 5 A


current ound.

IOUT1(max) max output current without OPP protection at nominal 7.4 A


POUT2 (90V x 700mA)

IOUT1(peak) peak output current During less than 50ms at nominal > 10 A
POUT2 (90V x 700mA)

VOUT2 output voltage - 90 V

IOUT2 continuous output See Error! Reference source not 0 to 700 mA


current ound.

tholdup hold-up time at 115 V , 60 Hz, Full load >10 ms

tstartup startup time at 115 V , 60 Hz ≤ 0.5 s

η Efficiency Average ≥ 88 %

Remark on circuit design: The PFC converter design can be further optimized to fit the
130W requirements. For example a smaller value of the boost capacitor (C116, C117)
can be chosen (82 F for example).
The output capacitors at Vout1 and Vout2 are coupled, improving response on load steps
especially during Burst Mode transitions.
Vout1 rectification has been implemented by SR driver TEA1995 and power Mosfets.
This improves the efficiency for higher loads. As alternative solution rectifier diodes can
be used. A provision for these rectifier diodes has been made in the board layout.

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3. Measurements
3.1 Test facilities
1. Oscilloscope: Yokogawa DL9505L
2. AC Power Source: Agilent 6812B
3. Electronic load: Agilent 6063B + Chroma 63108
4. Digital power meter: Yokogawa WT210

3.2 Efficiency
Efficiency measurements were taken after the system is stable. The output voltage and
current were measured directly at the PCB connector. Measurements were performed for
115 V; 60 Hz and 230 V; 50 Hz.
For these measurements the load percentage is valid for both outputs. For example 50%
load: VOUT1 (13V) = 2.5A and VOUT2 (90V) = 350 mA.
Although the CoC requirement is valid for external power supplies (adapters) and not for
internal power supplies it is used as a reference for comparison.

Table 3. Efficiency results

Condition CoC
Efficiency average
Average 25% 50% 75% 100%
requirement (%)
load load load load

115 V, 60 Hz >89 88.8 84.3 88.8 90.6 91.4

230 V, 50 Hz >89 89.8 84.9 89.8 91.7 92.7

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Fig 5. Efficiency at input voltage 115Vrms and 230Vrms

3.3 No load and low load power consumption


Power consumption performance of the total application board at low load was measured
with a Yokogawa WT210 digital power meter. The integration time function was used to
measure the power consumption over a long time.
Measurements were performed for 100 V; 60 Hz, 230 V; 50 Hz.

Table 4. Input power consumption: no load


Condition No load power
consumption (mW)

100 V; 60 Hz 60

230 V; 50 Hz 90

Table 5. Input power consumption: 250mW load (EuPlot6 standby)


Condition 250mW load power
consumption (mW)

115 V; 60 Hz 400

230 V; 50 Hz 430

Requirement: < 500mW

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Table 6. Input power consumption: 125mW load (EuPlot6 standby)


Condition 125mW load power
consumption (mW)

115 V; 60 Hz 230

230 V; 50 Hz 260

Requirement: < 250mW

3.4 Startup time and output voltage rise

Fig 6. Startup time at nominal output load

Fig 7. Startup time at no output load

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Table 7.
Startup time
Condition Startup time (ms)

115 V; 60 Hz 367

230 V; 50 Hz 289

Requirement < 500ms

3.5 Operation mode transitions


The mode transitions is related to the total power in the converter. It is a combination of
the power to VOUT1 and VOUT2.

Table 8. Mode transitions


Transition Power level (W) VOUT1 VOUT2

HP-LP 45 13V x 1.5A 90V x 200mA

LP-BM 25.5 13V x 1.57A 90V x 0mA

BM-LP 25.5 13V x 1.57A 90V x 0mA

LP-HP 47 13V x 1.7A 90V x 200mA

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3.6 Output voltage ripple


3.6.1 VOUT1

Fig 8. Maximum VOUT1 voltage ripple in BM at 50% duty cycle

Maximum VOUT1 voltage ripple: 240 mVpp

3.6.2 VOUT2

Fig 9. Maximum VOUT2 voltage ripple at nominal output power

Maximum VOUT2 voltage ripple:


Mains related part: 100 mVpp
Conversion related part: 150 mVpp
Total maximum voltage ripple = 100 + 150 = 250 mVpp

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3.7 Overpower protection level (OPP) and peak power

Fig 10. Over Power Protection at 159W longer than 50ms. Peak power > 220W

Over Power Protection (duration > 50ms) at 159W (13V x 7.4A + 90V x 0.7A)
Peak power (duration < 50ms) > 220W (13V x 13A + 90V x 0.7A)

3.8 Dynamic load


The output voltage was measured at the end of the board.

Table 9. Minimum and maximum output voltage at min-max load steps


Condition Load Output voltage min-max (V)

Standby IOUT1: 0A – 5A 12.95 – 13.54

Operation IOUT1: 1A – 5A 13.93 – 13.47

Fig 11. Output voltage during dynamic load VOUT1

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Fig 12. Output voltage during dynamic load VOUT1

3.9 Hold-up time


Definition of the hold-up time is defined as the time between the following moments:
1. After mains switch off; the moment that the lowest bulk cap voltage during a
mains cycle is crossed.
2. The moment that the output voltage starts to drop.
The hold-up time is measured for 115 V; 60 Hz under full load (13V x 5A + 90V x 0.7A)
condition. Output voltage duration was measured directly at the output connector.

Table 10. Hold-up time


Condition Hold-up time (ms)

115V; 60Hz 51

Requirement > 10ms

Remark: A smaller value of the Vboost capacitor (C115) can be used for sufficient
performance. For example 82 F.

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Fig 13. Hold-up time at Vmains = 115Vac and nominal output load

3.10 EMC
The conducted EMI of the DB1440 board was measured under the following conditions:

• Vout1=13V Vout2=90V Iout1=5A Iout2=0.7A


• V_LINE = 115V/60Hz

The conducted EMI was measured both in the Line as well as in the Neutral.
Product complies with the EMC standard.

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NXP Semiconductors RBW 9 kHz


04.Mar 16 15:13 MT 1 s
Att 10 dB PREAMP OFF

dBµV 100 1 MHz 10 MHz


LIMIT CHECK PASS

90
SGL
1 PK
CLRWR
80

2 AV
TDF
CLRWR
70

EN55022Q

60

EN55022A

50

6DB
40

30

20

10

150 kHz 30 MHz

Date: 4.MAR.2016 15:13:05

Fig 14. Measured in the “Line” at Vline = 115Vrms

NXP Semiconductors RBW 9 kHz


04.Mar 16 15:19 MT 1 s
Att 10 dB PREAMP OFF

dBµV 100 1 MHz 10 MHz


LIMIT CHECK PASS

90
SGL
1 PK
CLRWR
80

2 AV
TDF
CLRWR
70

EN55022Q

60

EN55022A

50

6DB
40

30

20

10

150 kHz 30 MHz

Date: 4.MAR.2016 15:19:55

Fig 15. Measured in the “Neutral” at Vline = 115Vrms

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4. Circuit diagram

Fig 16. Circuit diagram TEA8818 130W 13V and 90V power supply PFC part

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Fig 17. Circuit diagram TEA8818 130W 13V and 90V power supply HBC part
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Fig 18. Circuit diagram TEA8818 130W 13V and 90V power supply SR part
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5. PCB layout

Fig 19. PCB Layout TEA8818DB1440

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6. Bill of Materials (BOM)

Table 11. Bill of materials


TEA8818 + TEA1995 130W Power supply prototype
Position Description Mounted
BD101 Bridge Rect.; 600 V; 8 A
C103 Capacitor; 1 uF; 10 %; 450 V; PET; THT NM
C104 Capacitor; 470 nF; 10 %; 450 V; PET; THT
C105 Capacitor; 470 nF; 10 %; 450 V; PET; THT NM
C106 Capacitor; 1 uF; 10 %; 450 V; PET; THT
C107 Capacitor; 47 pF; 5 %; 1 kV; C0G; 1206
C108 Capacitor; 100 pF; 10 %; 50 V; X7R; 0603
C109 Capacitor; 150 nF; 10 %; 50 V; X7R; 0603
C110 Capacitor; 470 nF; 10 %; 50 V; X7R; 0805
C113 Capacitor; 100 nF; 10 %; 50 V; X7R; 0603
C114 Capacitor; 4.7 nF; 10 %; 50 V; X7R; 0603
C115 Capacitor; 47 nF; 10 %; 630 V; X7R; 1210 NM
C116 Capacitor; 82 uF; 20 %; 450 V; ALU; THT
C117 Capacitor; 82 uF; 20 %; 450 V; ALU; THT
C201 Capacitor; 330 pF; 5 %; 1 kV; C0G; 1206
C202 Capacitor; 330 pF; 5 %; 1 kV; C0G; 1206
C203 Capacitor; 47 pF; 10 %; 50 V; X7R; 0805
C204 Capacitor; 470 nF; 10 %; 50 V; X7R; 0805
C206 Capacitor; 47 µF; 20 %; 35 V; ALU; THT
C207 Capacitor; 2.7 nF; 5 %; 50 V; COG; 0603
C208 Capacitor; 33 pF; 5 %; 1 kV; C0G; 1206
C209 Capacitor; 1 nF; 5 %; 1 kV; C0G; 1812
C210 Capacitor; 2.2 nF; 10 %; 50 V; X7R; 0603
C211 Capacitor; 47 nF; 20 %; 1 kV; MKP
C212 Capacitor; 33 nF; 10 %; 50 V; X7R; 0603
C213 Capacitor; 330 nF; 10 %; 50 V; X7R; 0805
C214 Capacitor; 1 µF; 10 %; 50 V; X7R; 0805
C215 Capacitor; 10 µF; 20 %; 63 V; ALU; THT
C216 Capacitor; 10 nF; 10 %; 500 V; X7R; 1812
C218 Capacitor; 680 pF; 10 %; 50 V; X7R; 0603
C219 Capacitor; 1.2 nF; 5 %; 50 V; COG; 0603
C220 Capacitor; 47 nF; 5 %; 1 kV; MKP NM
C221 Capacitor; 10 nF; 10 %; 50 V; X7R; 1206
C222 Capacitor; 120 pF; 5 %; 50 V; C0G; 0603 NM
C301 Capacitor; 1.5 nF; 10 %; 50 V; X7R; 0603
C302 Capacitor; 47 nF; 10 %; 50 V; X7R; 0603
C303 Capacitor; 470 µF; 20 %; 16 V; ALU; THT
C304 Capacitor; 470 µF; 20 %; 16 V; ALU; THT
C306 Capacitor; 470 µF; 20 %; 16 V; ALU; THT
C307 Capacitor; 470 µF; 20 %; 16 V; ALU; THT
C308 Capacitor; 100 µF; 20 %; 160 V; ALU; THT
C309 Capacitor; 100 µF; 20 %; 160 V; ALU; THT

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C311 Capacitor; 100 µF; 20 %; 160 V; ALU; THT


C312 Capacitor; 100 nF; 10 %; 50 V; X7R; 0603
C319 Capacitor; 100 nF; 10 %; 50 V; X7R; 0603 NM
C320 Capacitor; 100 nF; 10 %; 200 V; X7R; 1206 NM
CN301 Header; Straight; 1x6-way; 2.54mm
CN302 Header; Straight; 1x5-way; 2.54mm
CX101 Capacitor; 470 nF; 20 %; 310 VAC; MKP; THT
CX102 Capacitor; 470 nF; 20 %; 310 VAC; MKP; THT
CY101 Capacitor; 2.2 nF; 20 %; 310 VAC; MKP; THT
CY102 Capacitor; 2.2 nF; 20 %; 310 VAC; MKP; THT
CY201 Capacitor; 2.2 nF; 20 %; 250 V; CER; THT
D101 Diode; 1kV; 3A
D102 Diode; 600 V; 3 A
D105 Diode; 100 V; 250 mA
D201 Diode; 100 V; 250 mA
D202 Diode; 100 V; 250 mA
D203 Diode; 100 V; 250 mA
D204 Diode; 140 V; 1 A
D205 Diode; 140 V; 1 A
D206 Diode; 600 V; 1 A
D207 Diode; 100 V; 250 mA NM
D208 Diode; 100 V; 250 mA NM
D301 Diode; 280 V; 5 A;
D302 Diode; 280 V; 5 A;
D303 Diode; Schottky; Dual; 100 V; 10 A NM
D306 Diode; 280 V; 5 A;
D307 Diode; 280 V; 5 A;
D308 Diode; Schottky; Dual; 100 V; 10 A NM
D309 Diode; 100 V; 250 mA
D310 Diode; Zener; 3.3 V; 300 mA
E101 Wire Hole; AWG15
E102 Wire Hole; AWG15
E103 Wire Hole; AWG15
E104 Wire Hole; AWG18
E301 Wire Hole; AWG18
F101 Fuse; 300 VAC; 4 A; Slow Blow
GDT1 Gas Discharge Tube; 200 V; THT NM
GDT2 Gas Discharge Tube; 200 V; SMT NM
GDT3 Gas Discharge Tube; 200 V; THT NM
GDT4 Gas Discharge Tube; 200 V; SMT
GDT5 Gas Discharge Tube; 200 V; THT NM
GDT6 Gas Discharge Tube; 200 V; SMT
HS101 Heatsink; Primary
HS102 Heatsink; TO220; 24 °C/W
HS301 Heatsink NM
L103 Inductor; 100 uH; 5 A
L104 Inductor; QP-2916
L301 Inductor; 900 nH NM
L302 Inductor; 900 nH NM

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LF102 Inductor; Common Mode; 6.1 mH; 3.3 A


MH1 Mounting Hole; Plated; 3.5 MM
MH2 Mounting Hole; Plated; 3.5 MM
Q101 MOSFET-N; 560 V; 11.6 A
Q201 MOSFET-N; 550 V; 0.28 O; 13 A
Q202 MOSFET-N; 550 V; 0.28 O; 13 A
Q204 MOSFET-N; D2PAK NM
Q205 MOSFET-N; D2PAK NM
Q301 MOSFET-N; 40 V; 100A
Q302 MOSFET-N; 40 V; 100 A
R101 Resistor; 10 MOhm; 1 %; 250 mW; 1206
R102 Resistor; 10 MOhm; 1 %; 250 mW; 1206
R103 Resistor; 4.7 Ohm; 1 %; 63 mW; 0603
R104 Resistor; 20 Ohm; 1 %; 63 mW; 0603
R106 Resistor; 1 kOhm; 1 %; 63 mW; 0603
R107 Resistor; 0.05 Ohm; 1 %; 1 W; 2512
R108 Resistor; 0.2 Ohm; 1 %; 1 W; 2512
R110 Resistor; 5.1 kOhm; 1 %; 63 mW; 0603
R111 Resistor; 3.6 kOhm; 1 %; 63 mW; 0603 NM
R112 Resistor; 33 kOhm; 1 %; 100 mW; 0603
R114 Resistor; 750 kOhm; 1 %; 250 mW; 1206
R115 Resistor; 7.5 MOhm; 1 %; 250 mW; 1206
R116 Resistor; 7.5 MOhm; 1 %; 250 mW; 1206
R118 Resistor; 100 kOhm; 1 %; 63 mW; 0603
R121 Resistor; 360 kOhm; 1 %; 63 mW; 0603 NM
R192 Resistor; 510 kO; 1 %; 250 mW; 1206
R193 Resistor; 510 kO; 1 %; 250 mW; 1206
R194 Resistor; 510 kO; 1 %; 250 mW; 1206
R195 Resistor; 510 kO; 1 %; 250 mW; 1206
R196 Resistor; 0 Ohm; jumper; 250 mW; 1206
R197 Resistor; 0 Ohm; jumper; 250 mW; 1206
R198 Resistor; 0 Ohm; jumper; 250 mW; 1206
R199 Resistor; 0 Ohm; jumper; 250 mW; 1206
R201 Resistor; 22 Ohm; 1 %; 63 mW; 0603
R202 Resistor; 10 Ohm; 1 %; 63 mW; 0603
R203 Resistor; 22 Ohm; 1 %; 63 mW; 0603
R204 Resistor; 10 Ohm; 1 %; 63 mW; 0603
R205 Resistor; 180 kOhm; 1 %; 63 mW; 0603
R206 Resistor; 56 kOhm; 1 %; 63 mW; 0603
R207 Resistor; 10 kOhm; 1 %; 63 mW; 0603
R208 Resistor; 2.2 MOhm; 1 %; 250 mW; 1206
R209 Resistor; 2.7 MOhm; 1 %; 250 mW; 1206
R210 Resistor; 10 Ohm; 1 %; 63 mW; 0603
R211 Resistor; 6.8 kOhm; 1 %; 63 mW; 0603
R212 Resistor; 82 kOhm; 1 %; 63 mW; 0603
R213 Resistor; 6.2 kOhm; 1 %; 250 mW; 1206
R214 Resistor; 6.2 kOhm; 1 %; 250 mW; 1206
R215 Resistor; 47 kOhm; 1 %; 63 mW; 0603
R229 Resistor; 0 Ohm; jumper; 63 mW; 0603

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R231 Resistor; 6.2 kOhm; 1 %; 250 mW; 1206


R232 Resistor; 6.2 kOhm; 1 %; 250 mW; 1206
R233 Resistor; 180 kO; 5 %; 63 mW; 0603
R234 Resistor; 0 O; Jumper; 63 mW; 0603
R296 Resistor; 0 Ohm; jumper; 250 mW; 1206
R297 Resistor; 0 Ohm; jumper; 250 mW; 1206
R298 Resistor; 0 Ohm; jumper; 250 mW; 1206
R299 Resistor; 0 Ohm; jumper; 250 mW; 1206
R301 Resistor; 3.3 kO; 1 %; 63 mW; 0603
R302 Resistor; 2.7 kO; 1 %; 250 mW; 1206
R304 Resistor; 20 O; 1 %; 63 mW; 0603
R305 Resistor; 47 kO; 1 %; 100 mW; 0603
R306 Resistor; 9.1 kO; 1 %; 63 mW; 0603
R307 Resistor; 51 Ohm; 1 %; 63 mW; 0603
R308 Resistor; 39 kOhm; 1 %; 63 mW; 0603
R309 Resistor; 39 kOhm; 1 %; 63 mW; 0603
R310 Resistor; 0 O; jumper; 63 mW; 0603
R311 Resistor; 0 O; jumper; 63 mW; 0603
R312 Resistor; 0 O; jumper; 63 mW; 0603
R313 Resistor; 0 O; jumper; 63 mW; 0603
R314 Resistor; 0 O; Jumper; 250 mW; 1206
R315 Resistor; 0 O; Jumper; 250 mW; 1206
SG1 Spark gap; 6.0 mm
T201 Transformer; ETD34
U101 PFC controller; TEA88182
U201 LLC controller; TEA88181T
U202 Optocoupler; NPN; 80 V; 60 mA
U301 Regulator; AS431
U302 Sync. Rec. Cntrl.; Dual; TEA1995T
WB101 Wirebridge; 0.8mm; P=15.24mm
WB102 Wirebridge; 0.8mm; P=5.08mm
WB103 Wirebridge; 0.8mm; P=15.24mm
WB201 Wirebridge; 0.8mm; P=20.32mm
WB202 Wirebridge; 0.8mm; P=7.62mm
WB203 Wirebridge; 0.8mm; P=7.62mm
WB205 Wirebridge; 0.8mm; P=25.40mm
WB206 Wirebridge; 0.8mm; P=12.10mm
WB208 Wirebridge; 0.8mm; P=7.62mm
WB209 Wirebridge; 0.8mm; P=15.24mm NM
WB301 Wirebridge; 0.8mm; P=12.10mm
WB302 Wirebridge; 0.8mm; P=15.24mm
WB303 Wirebridge; 0.8mm; P=12.10mm
WB304 Wirebridge; 0.8mm; P=12.10mm
WB305 Wirebridge; 0.8mm; P=10.16mm
WB306 Wirebridge; 0.8mm; P=12.10mm

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7. Transformer data
7.1 PFC coil data

Fig 20. PFC coil data QP2914

7.2 HBC transformer data

Fig 21. HBC Transformer data

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8. Abbreviations
Table 12. Abbreviations
Acronym Description
BCM Boundary conduction Mode
BM Burst mode operation
HP High power mode
LP Low power mode
MOSFET Metal-Oxide Semiconductor Field-Effect Transistor
OPP OverPower Protection
OVP OverVoltage Protection
PCB Printed-Circuit Board
QR Quasi Resonant
RMS Root Mean Square
SR Synchronous Rectification

9. References
[1] TEA88181T — draft data sheet HBC controller–
[2] TEA88182T — draft data sheet PFC controller –
[3] ANxxxxx — draft application note TEA88181T and TEA88182T
[4] TEA1995T — data sheet - GreenChip synchronous rectifier controller
http://www.nxp.com/documents/data_sheet/TEA1995T.pdf

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10. Legal information


particular purpose. The entire risk as to the quality, or arising out of the use or
10.1 Definitions performance, of this product remains with customer.

In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer
Draft — The document is a draft version only. The content is still under internal review
for any special, indirect, consequential, punitive or incidental damages (including without
and subject to formal approval, which may result in modifications or additions. NXP
limitation damages for loss of business, business interruption, loss of use, loss of data or
Semiconductors does not give any representations or warranties as to the accuracy or
information, and the like) arising out the use of or inability to use the product, whether or
completeness of information included herein and shall have no liability for the
not based on tort (including negligence), strict liability, breach of contract, breach of
consequences of use of such information.
warranty or any other theory, even if advised of the possibility of such damages.

Notwithstanding any damages that customer might incur for any reason whatsoever
10.2 Disclaimers (including without limitation, all damages referenced above and all direct or general
Limited warranty and liability — Information in this document is believed to be accurate damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and
and reliable. However, NXP Semiconductors does not give any representations or customer’s exclusive remedy for all of the foregoing shall be limited to actual damages
warranties, expressed or implied, as to the accuracy or completeness of such information incurred by customer based on reasonable reliance up to the greater of the amount
and shall have no liability for the consequences of use of such information. actually paid by customer for the product or five dollars (US$5.00). The foregoing
limitations, exclusions and disclaimers shall apply to the maximum extent permitted by
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive,
applicable law, even if any remedy fails of its essential purpose.
special or consequential damages (including - without limitation - lost profits, lost savings,
business interruption, costs related to the removal or replacement of any products or Safety of high-voltage evaluation products —The non-insulated high voltages that are
rework charges) whether or not such damages are based on tort (including negligence), present when operating this product, constitute a risk of electric shock, personal injury,
warranty, breach of contract or any other legal theory. death and/or ignition of fire. This product is intended for evaluation purposes only. It shall
be operated in a designated test area by personnel that is qualified according to local
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP
requirements and labor laws to work with non-insulated mains voltages and high-voltage
Semiconductors’ aggregate and cumulative liability towards customer for the products
circuits.
described herein shall be limited in accordance with the Terms and conditions of
commercial sale of NXP Semiconductors. The product does not comply with IEC 60950 based national or regional safety standards.
NXP Semiconductors does not accept any liability for damages incurred due to
Right to make changes — NXP Semiconductors reserves the right to make changes to
inappropriate use of this product or related to non-insulated high voltages. Any use of this
information published in this document, including without limitation specifications and
product is at customer’s own risk and liability. The customer shall fully indemnify and hold
product descriptions, at any time and without notice. This document supersedes and
harmless NXP Semiconductors from any liability, damages and claims resulting from the
replaces all information supplied prior to the publication hereof.
use of the product.
Suitability for use — NXP Semiconductors products are not designed, authorized or
Non-automotive qualified products — Unless this data sheet expressly states that this
warranted to be suitable for use in life support, life-critical or safety-critical systems or
specific NXP Semiconductors product is automotive qualified, the product is not suitable
equipment, nor in applications where failure or malfunction of an NXP Semiconductors
for automotive use. It is neither qualified nor tested in accordance with automotive testing
product can reasonably be expected to result in personal injury, death or severe property
or application requirements. NXP Semiconductors accepts no liability for inclusion and/or
or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or
use of non-automotive qualified products in automotive equipment or applications.
use of NXP Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk. In the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall use the
Applications — Applications that are described herein for any of these products are for
product without NXP Semiconductors’ warranty of the product for such automotive
illustrative purposes only. NXP Semiconductors makes no representation or warranty that
applications, use and specifications, and (b) whenever customer uses the product for
such applications will be suitable for the specified use without further testing or
automotive applications beyond NXP Semiconductors’ specifications such use shall be
modification.
solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for
Customers are responsible for the design and operation of their applications and products any liability, damages or failed product claims resulting from customer design and use of
using NXP Semiconductors products, and NXP Semiconductors accepts no liability for the product for automotive applications beyond NXP Semiconductors’ standard warranty
any assistance with applications or customer product design. It is customer’s sole and NXP Semiconductors’ product specifications.
responsibility to determine whether the NXP Semiconductors product is suitable and fit for
the customer’s applications and products planned, as well as for the planned application
and use of customer’s third party customer(s). Customers should provide appropriate 10.3 Licenses
design and operating safeguards to minimize the risks associated with their applications
Purchase of NXP <xxx> components
and products.
<License statement text>
NXP Semiconductors does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s applications or
products, or the application or use by customer’s third party customer(s). Customer is 10.4 Patents
responsible for doing all necessary testing for the customer’s applications and products
using NXP Semiconductors products in order to avoid a default of the applications and Notice is herewith given that the subject device uses one or more of the following patents
the products or of the application or use by customer’s third party customer(s). NXP does and that each of these patents may have corresponding patents in other jurisdictions.
not accept any liability in this respect. <Patent ID> — owned by <Company name>
Export control — This document as well as the item(s) described herein may be subject
to export control regulations. Export might require a prior authorization from national
authorities.
10.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks are
Evaluation products — This product is provided on an “as is” and “with all faults” basis
property of their respective owners.
for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers
expressly disclaim all warranties, whether express, implied or statutory, including but not <Name> — is a trademark of NXP B.V.
limited to the implied warranties of non-infringement, merchantability and fitness for a

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11. List of figures

Fig 1. General warning................................................ 3


Fig 2. Pin configuration of the TEA88181T (HBC) and
the TEA88182T (PFC) ...................................... 4
Fig 3. Pin configuration of the TEA1995T (SR) ........... 4
Fig 4. TEA88181T, TEA88182T and TEA1995T
prototype demo board 130W............................. 5
Fig 5. Efficiency at input voltage 115Vrms and
230Vrms............................................................ 8
Fig 6. Startup time at nominal output load .................. 9
Fig 7. Startup time at no output load ........................... 9
Fig 8. Maximum VOUT1 voltage ripple in BM at 50%
duty cycle ........................................................ 11
Fig 9. Maximum VOUT2 voltage ripple at nominal output
power .............................................................. 11
Fig 10. Over Power Protection at 159W longer than
50ms. Peak power > 220W ............................. 12
Fig 11. Output voltage during dynamic load VOUT1 ...... 12
Fig 12. Output voltage during dynamic load VOUT1 ...... 13
Fig 13. Hold-up time at Vmains = 115Vac and nominal
output load ...................................................... 14
Fig 14. Measured in the “Line” at Vline = 115Vrms ..... 15
Fig 15. Measured in the “Neutral” at Vline = 115Vrms 15
Fig 16. Circuit diagram TEA8818 130W 13V and 90V
power supply PFC part ................................... 16
Fig 17. Circuit diagram TEA8818 130W 13V and 90V
power supply HBC part ................................... 17
Fig 18. Circuit diagram TEA8818 130W 13V and 90V
power supply SR part ...................................... 18
Fig 19. PCB Layout TEA8818DB1440 ........................ 19
Fig 20. PFC coil data QP2914 .................................... 24
Fig 21. HBC Transformer data .................................... 24

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12. List of tables

Table 1. Input specification ............................................. 6


Table 2. Output specification .......................................... 6
Table 3. Efficiency results ............................................... 7
Table 4. Input power consumption: no load .................... 8
Table 5. Input power consumption: 250mW load (EuPlot6
standby) ............................................................ 8
Table 6. Input power consumption: 125mW load (EuPlot6
standby) ............................................................ 9
Table 7. Startup time..................................................... 10
Table 8. Mode transitions.............................................. 10
Table 9. Minimum and maximum output voltage at min-
max load steps ................................................ 12
Table 10. Hold-up time.................................................... 13
Table 11. Bill of materials................................................ 20
Table 12. Abbreviations .................................................. 25

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13. Contents

1. Introduction ......................................................... 3 12. List of tables ......................................................28


1.1 Scope of this document ...................................... 3 13. Contents ............................................................. 29
1.2 TEA88181T and TEA88182T ............................. 3
1.3 TEA1995T .......................................................... 4
1.4 Setup of the 130W 13V/90V power supply ......... 5
2. Power supply specification ................................ 6
3. Measurements ..................................................... 7
3.1 Test facilities ...................................................... 7
3.2 Efficiency ............................................................ 7
3.3 No load and low load power consumption .......... 8
3.4 Startup time and output voltage rise ................... 9
3.5 Operation mode transitions .............................. 10
3.6 Output voltage ripple ........................................ 11
3.6.1 VOUT1 ................................................................ 11
3.6.2 VOUT2 ................................................................ 11
3.7 Overpower protection level (OPP) and peak
power ............................................................... 12
3.8 Dynamic load ................................................... 12
3.9 Hold-up time ..................................................... 13
3.10 EMC ................................................................. 14
4. Circuit diagram .................................................. 16
5. PCB layout ......................................................... 19
6. Bill of Materials (BOM) ...................................... 20
7. Transformer data ............................................... 24
7.1 PFC coil data.................................................... 24
7.2 HBC transformer data ...................................... 24
8. Abbreviations .................................................... 25
9. References ......................................................... 25
10. Legal information .............................................. 26
10.1 Definitions ........................................................ 26
10.2 Disclaimers....................................................... 26
10.3 Licenses ........................................................... 26
10.4 Patents ............................................................. 26
10.5 Trademarks ...................................................... 26
11. List of figures..................................................... 27

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in the section 'Legal information'.

© NXP B.V. 2015. All rights reserved.


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 30 September 2015


Document identifier: UMxxxxx

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