AGR09180EF

180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Introduction Table 1. Thermal Characteristics

Parameter Sym Value Unit
The AGR09180EF is a high-voltage, gold-metalized,
Thermal Resistance,
laterally diffused metal oxide semiconductor
Junction to Case R JC 0.35 °C/W
(LDMOS) RF power transistor suitable for cellular
band, code-division multiple access (CDMA), global
Table 2. Absolute Maximum Ratings*
system for mobile communication (GSM), enhanced
data for global evolution (EDGE), and time-division Parameter Sym Value Unit
multiple access (TDMA) single and multicarrier class Drain-source Voltage VDSS 65 Vdc
AB wireless base station amplifier applications. This Gate-source Voltage VGS –0.5, +15 Vdc
device is manufactured on an advanced LDMOS
Total Dissipation at TC = 25 °C PD 500 W
technology, offering state-of-the-art performance,
Derate Above 25 ˇC — 2.86 W/°C
reliability, and thermal resistance. Packaged in an
industry-standard CuW package capable of deliver- Operating Junction Tempera- TJ 200 °C
ing a minimum output power of 180 W, it is ideally ture
suited for today's RF power amplifier applications. Storage Temperature Range TSTG –65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.

Table 3. ESD Rating*

AGR09180EF Minimum (V) Class
HBM 500 1B
Figure 1. AGR09180EF (flanged) Package
MM 50 A
CDM 1000 4
Features * Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
Typical performance ratings are for IS-95 CDMA, during all handling, assembly, and test operations. PEAK
Agere Devices
employs a human-body model (HBM), a machine model (MM),
pilot, sync, paging, traffic codes 8—13: and a charged-device model (CDM) qualification requirement in
— Output power (POUT): 38 W. order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
— Power gain: 18.25 dB. circuit parameters used in each of the models, as defined by
— Efficiency: 27%. JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
— Adjacent channel power ratio (ACPR) for
Caution: MOS devices are susceptible to damage from elec-
30 kHz bandwidth (BW): trostatic charge. Reasonable precautions in han-
(750 kHz offset: –45 dBc) dling and packaging MOS devices should be
observed.
(1.98 MHz offset: –60 dBc).
— Input return loss: 10 dB.
High-reliability, gold-metalization process.
High gain, efficiency, and linearity.
Integrated ESD protection.
Si LDMOS.
Industry-standard packages.
180 W minimum output power.
AGR09180EF
180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.

Table 4. dc Characteristics (Measurements made on ½ of device)

Parameter Symbol Min Typ Max Unit

Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 400
300 µA) V(BR)DSS 65 — — Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS — — 6 µAdc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) IDSS — — 16
200 µAdc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1.0 A) GFS — 12 — S
Gate Threshold Voltage (VDS = 10 V, ID = 600 µA) VGS(TH) — — 4.8 Vdc
Gate Quiescent Voltage (VDS = 28 V, IDQ = 2 x 850 mA) VGS(Q) — 3.8 — Vdc
Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) VDS(ON) — 0.06 — Vdc

Table 5. RF Characteristics

Parameter Symbol Min Typ Max Unit

Dynamic Characteristics (Measurements made on ½ of device)
Output Capacitance COSS — 46 — pF
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance CRSS — 2.4 — pF
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (in Supplied Test Fixture)
Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain GL 17.5 18.25 — dB
(VDS = 28 V, POUT = 38 W, IDQ = 2 x 850 mA)
Output Power P1dB 180 210 — W
(VDS = 28 V, 1 dB compression, IDQ = 2 x 850 mA)
Drain Efficiency — 58 — %
(VDS = 28 V, POUT = P1dB, IDQ = 2 x 850 mA)
Third-order Intermodulation Distortion IMD — –30 — dBc
(100 kHz spacing, VDS = 28 V, POUT = 180 WPEP,
IDQ = 2 x 850 mA)
Input VSWR VSWRI — 2:1 — —
Ruggedness — No degradation in output power.
(VDS = 28 V, POUT = 180 W, IDQ = 2 x 850 mA, f = 880 MHz,
VSWR = 10:1, all angles)
 AGR09180EF
180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Test Circuit Illustrations

R5
VDD

VGG R7 FB1

C28 C29 C30 C31 C32 C33 C34 C35

R3 Z11
C1 C2 C3 C4 C5 C6 C7 C8 Z29 COAX2
C49
R1 C45
RF INPUT C24 C23 C22 C44 Z33 Z35
C18 Z27 Z31
Z4 Z5 Z7 Z9 Z13 Z15 Z17 Z19 Z21
Z1 2A 1A
Z38
Z23 Z25 Z37
C20 C21 3 DUT
C19 C46 C47 C48 RF OUTPUT
2B
1B
Z2 Z22 Z24
COAX1 Z3 Z6 Z8 Z12 Z14 Z16 Z18 Z20
C17 C51 Z26 Z30
C26 Z32 Z34 Z36
R6 R2
C27 C25
Z28 C52
VGG R8 FB2 C50
VDD
PINS:
Z10 1A. DRAIN
R4 1B. DRAIN
C9 C10 C11 C12 C13 C14 C15 C16 2A. GATE C36 C37 C38 C39 C40 C41 C42 C43
2B. GATE
3. SOURCE

A. Schematic

Parts List:
Kemet® 1206 size chip capacitor:
C3, C4, C11, C12, C32, C40: 0.1 µF,
C1206C104KRAC7800.
Murata ® 0805: C5, C13, C31, C39:
0.01 µF, GRM40X7R103K100AL.
Sprague ® tantalum chip capacitor, 35 V:
C1, C2, C9, C10, C33, C34, C41, C42:
10 µF; C35, C43: 22 µF.
Johanson Giga-Trim® variable capaci-
tors, 27291SL: C19, C48:0.8 pF—8.0 pF.
ATC® chip capacitor: C7, C15, C20, C22,
C25, C29, C37, C47: 10 pF, 100B100JW;
C8, C16, C17, C18, C28, C36, C49, C50:
47 pF, 100B470JW;
C21: 3.9 pF, 100B3R9BW;
C23, C26: 6.8 pF, 100B6R8BW;
C24, C27: 4.7 pF, 100B4R7BW;
C44, C51: 12 pF 100B120JW;
C45, C52: 2.0 pF, 100B2R0BW;
C46: 5.6 pF 100B5R6BW.
0603 size chip capacitors:
C6, C14, C30, C38: 220 pF.
UT-141A: Coax1, Coax2: 50 , semi-rigid
coaxial cable.
Kreger® ferrite bead: FB1, FB2:
2743D19447.
Taconic ® ORCER RF-35: board material,
1 oz. copper, 30 mil thickness, r = 2.55.

Microstrip line: Z1, Z38 0.572 in. x 0.084 in.; Z2, Z4, Z36, Z37 1.834 in. x 0.084 in.; Z3, Z5, Z34, Z35 0.106 in. x 0.110 in.;
Z6, Z7 0.0785 in. x 0.110 in.; Z8, Z9 0.782 in. x 0.110 in.; Z10, Z11 1.182 in. x 0.060 in.; Z12, Z13 0.128 in. x 0.700 in.;
Z14, Z15 0.209 in. x 0.700 in.; Z16, Z17, Z18, Z19, Z24, Z25 0.100 in. x 0.700 in.; Z20, Z21, Z26, Z27 0.050 in. x 0.700 in.;
Z22, Z23 0.498 in. x 0.700 in.; Z28, Z29 1.715 in. x 0.065 in.; Z30, Z31 0.651 in. x 0.110 in.; Z32, Z33 0.100 in. x 0.110 in.
1206 size chip resistor, 0.25 W: R1, R2: 51 , RM73B2B510J; R3, R4: 56 k , RM73B2B563J; R5, R6: 12 , RM73B2B120J;
R7, R8: 1.2 k , RM73B2B122J.

B. Component Layout
Figure 2. Test Circuit
AGR 09180 EF
180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Typical Performance Characteristics

0.12 0.13
0.11 0.14
0.38 0.37 0.15
0.1 0.39 0.36
90
0.4 100 80 0.35
0.09

45
50
0.4
1 110 40 70

1.0
0.9

1.2
.08

55

0.8
0 35

1.4
2
0.4

0.7
0
12

0.6 60
Yo)
07 jB/
0. E (+
43 NC
0. TA 0.2
EP
0 SC

5 65
13 SU
V E

06
I

0.
T
CI

0.

44
PA

0.
CA

70
R
,O 0.4
o)
0
5

14
4
0.
0.0

Z
5

X/
0.4

j
(+
T
75

EN
0.6
N
PO
4
0.0

6
0

0.3
M
0.4
15

CO

0.8
>

CE
80
RÐ

N
TO

TA

0
1.
AC
ERA

7
0.4

RE

0
f1

1.
GEN

160

0.2
85

IVE

Z0 = 7 Ω
U CT
A RD

8
0.

ZL
IN D
0.48
S TOW

90

f3
0.6
N GTH

170

0.1
0.4
0.0 Ð > W A V EL E

0.49

0.2
0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0
± 180
0.0

RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)

D <Ð

0.2
RD L OA
0.49

0.4
-170

0.1
TOW A

0.6
-90
TH S

f3
0.48

o)
jB/ Y
EN G

8
0.
ZS
E (-

f1
-160
L

-85

0.2
NC
V E

0
1.
WA

TA
7

MHz (f) ZS Ω ZL Ω
(Complex Source Impedance) (Complex Optimum Load Impedance)
(f1) 0.7 – j1.46 3.32 + j2.44
(f2) 0.7 – j1.54 3.34 + j2.36
(f3) 0.7 – j1.64 3.38 + j2.28
Note: Measured drain to drain and gate to gate, respectively.
DRAIN (1)
GATE (2)

ZS ZL
SOURCE (3)

INPUT MATCH DUT OUTPUT MATCH

Figure 3. Series Equivalent Input and Output Impedances

 AGR09180EF
180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Typical Performance Characteristics (continued)

0
-5
-10
-15
-20
-25
-30
ACPR (dBc)Z

-35 ACP+
-40 ACP-
-45
-50
-55 ACP1+
-60 ACP1-
-65
-70
-75
-80
3 8 13 18 23 28 33 38 43 48 53 58 63 68 73 78 83
POUT (W)ZZ

Test Conditions:
VDD = 28 Vdc, IDQ = 1700 mA, TC = 30 °C, IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8—13,
FREQUENCY = 880 MHz, OFFSET 1 = 750 kHz, 30 kHz BW, OFFSET 2 = 1.98 MHz, 30 kHz BW.

Figure 4. ACPR vs. POUT

20 0.0

19 POUT = 38 W -2.0

18 -4.0

INPUT RETURN LOSS (dB)Z

17 POWER GAIN -6.0
POWER GAIN (dB)Z

POUT = 220 W
16 -8.0

15 -10.0

14 -12.0

13 -14.0

12 -16.0
RETURN LOSS
11 -18.0

10 -20.0
860 865 870 875 880 885 890 895 900
FREQUENCY (MHz)Z
Test Conditions:
VDD = 28 Vdc, IDQ = 1700 mA, TC = 30 °C, WAVEFORM = CW.

Figure 5. Power Gain and Return Loss vs. Frequency

AGR09180EF
180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Typical Performance Characteristics (continued)

22
20
18
POWER GAIN (Pg) (dB) Z

16
14 865 MHz
880 MHz
12
895 MHz
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200 220 240

POUT (W)

Test Conditions:
VDD = 28 Vdc, IDQ = 1700 mA, TC = 30 °C, WAVEFORM = CW.

Figure 6. Power Gain vs. Power Out

100
240 95
220

DRAIN EFFICIENCY (Eff.) (%)Z

90
200 865 MHz 85
POUT 80
180 880 MHz 75
160 895 MHz 70
POUT (W)Z

140 65
120 60
55
100 865 MHz 50
80 880 MHz 45
60 895 MHz 40
40 35
EFFICIENCY
30
20 25
0 20
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

PIN (W)Z

Test Conditions:
VDD = 28 Vdc, IDQ = 1700 mA, TC = 30 °C, WAVEFORM = CW.

Figure 7. Power Out and Drain Efficiency vs. Input Power

 AGR09180EF
180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Typical Performance Characteristics (continued)

20.5
IDQ = 2300 mA
20.0 IDQ = 2000 mA

19.5
POWER GAIN (Pg) (dB)Z

19.0

18.5

18.0
IDQ = 1400 mA
17.5 IDQ = 1700 mA

17.0 IDQ = 1100 mA

16.5
0 20 40 60 80 100 120 140 160 180 200 220 240

OUTPUT POWER (POUT) (W)Z

Test Conditions:
VDD = 28 V, FREQUENCY = 880 MHz.

Figure 8. Power Gain vs. Power Out

330
310
290 865 MHz
270 880 MHz
250 895 MHz
230
POUT (W)Z

210
190
170
150
130
110
90
70
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
PIN (W)Z

Test Conditions:
VDD = 28 V, IDQ = 1700 mA, TC = 30 °C.
PULSE WIDTH = 8 µs, DUTY FACTOR = 10%.

Figure 9. Power Out vs. Input Power

AGR09180EF
180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Typical Performance Characteristics (continued)

0.0
-5.0
-10.0 IM3-
-15.0 IM3+
-20.0
-25.0 IM5-
IMD dBcZ

-30.0 IM5+
-35.0
-40.0
-45.0
-50.0 IM7-
-55.0 IM7+
-60.0
-65.0
20 40 60 80 100 120 140 160 180 200 220 240 260 280 300
OUTPUT POWER (POUT) WPEPZ

Test Conditions:
VDD = 28 V, IDQ = 1700 mA, TC = 30 °C.
F1 = 880 MHz and F2 = 880.1 MHz.

Figure 10. Third-order Intermodulation Distortion vs. Power Out

 AGR09180EF
180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.

PINS:
1A. DRAIN
1B. DRAIN
2A. GATE
1A 1B 2B. GATE
3. SOURCE
PEAKAGERE
DEVICES 3
AGR19K180U
AGR09180EF
YYWWLL XXXXX
XXXX
ZZZZZZZ

2A 2B

XXXX - 4 Digit Trace Code

Agere Systems Inc.