MICROWAVE CORPORATION

v01.0604 HMC441LP3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz

Typical Applications Features

8 The HMC441LP3 is a medium PA for: Gain: 14 dB
• Point-to-Point Radios Saturated Power: +20 dBm @ 20% PAE
• Point-to-Multi-Point Radios Single Supply Voltage:
AMPLIFIERS - SMT

• VSAT +5.0 V w/ Optional Gate Bias

• LO Driver for HMC Mixers 50 Ohm Matched Input/Output
• Military EW & ECM 3 x 3 x 1 mm QFN SMT Package

Functional Diagram General Description

The HMC441LP3 is a broadband GaAs PHEMT
MMIC Medium Power Amplifier which operates
between 6.5 and 13.5 GHz. The leadless plastic
QFN surface mount packaged amplifier provides
14 dB of gain, +20 dBm saturated power at 20%
PAE from a +5.0 V supply voltage. An optional
gate bias is provided to allow adjustment of gain,
RF output power, and DC power dissipation. This
50 Ohm matched amplifier does not require any
external components making it an ideal linear
gain block or driver for HMC SMT mixers.

Vgg1, Vgg2: Optional Gate Bias

Electrical Specifications, TA = +25° C, Vdd = 5V, Vgg1 = Vgg2 = Open

Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units

Frequency Range 6.5 - 8.0 8.0 - 11.0 11.0 - 13.5 GHz

Gain 10 13 12 14 10 13 dB

Gain Variation Over Temperature 0.02 0.025 0.02 0.025 0.02 0.025 dB/ °C

Input Return Loss 12 15 14 dB

Output Return Loss 12 15 13 dB

Output Power for 1 dB Compression (P1dB) 13 16 15 18 14 17 dBm

Saturated Output Power (Psat) 18.5 20 19.5 dBm

Output Third Order Intercept (IP3) 23 26 26 29 26 29 dBm

Noise Figure 5.0 4.5 4.75 dB

Supply Current (Idd) 80 80 80 mA

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
8 - 204
Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0604 HMC441LP3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz

Broadband Gain & Return Loss

20
Gain vs. Temperature
20
8
15 18

10 16
14
RESPONSE (dB)

AMPLIFIERS - SMT
5

GAIN (dB)
S21 12
0
S11
10
-5 S22
8
-10
6
+25 C
-15 4 +85 C
-20 -40 C
2
-25 0
4 5 6 7 8 9 10 11 12 13 14 15 16 6 7 8 9 10 11 12 13 14
FREQUENCY (GHz) FREQUENCY (GHz)

Input Return Loss vs. Temperature Output Return Loss vs. Temperature
0 0

+25 C
-5 +85 C -5
+25 C
RETURN LOSS (dB)

RETURN LOSS (dB)

-40 C
+85 C
-10 -10 -40 C

-15 -15

-20 -20

-25 -25
6 7 8 9 10 11 12 13 14 6 7 8 9 10 11 12 13 14
FREQUENCY (GHz) FREQUENCY (GHz)

P1dB vs. Temperature Psat vs. Temperature

24 24
22 22
20 20
18 18
P1dB (dB)

16 16
Psat (dB)

14 14
12 12
10 10
+25 C +25 C
8 +85 C 8 +85 C
-40 C -40 C
6 6
4 4
6 7 8 9 10 11 12 13 14 6 7 8 9 10 11 12 13 14
FREQUENCY (GHz) FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 8 - 205
Order Online at www.hittite.com
 MICROWAVE CORPORATION
v01.0604 HMC441LP3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz

Power Compression @ 10 GHz Output IP3 vs. Temperature

8 22 36
20 34
Pout (dBm), GAIN (dB), PAE (%)

18 32
16 30
AMPLIFIERS - SMT

14

OIP3 (dBm)
28
12
26
10
24
8
22
6 Pout +25 C
4 Gain 20 +85 C
PAE 18 -40 C
2
0 16
-10 -8 -6 -4 -2 0 2 4 6 8 10 6 7 8 9 10 11 12 13 14
INPUT POWER (dBm) FREQUENCY (GHz)

Gain, Power & OIP3 Gain, Power & Idd

vs. Supply Voltage @ 10 GHz vs. Gate Voltage @ 10 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)

32 35 210
30 Gain
GAIN (dB), P1dB (dBm), Psat (dBm)

P1dB Idd 180

30 Psat
28
26 25 150
Gain
24 P1dB
Psat 20 120

Idd (mA)
22 OIP3
20 90
15
18
16 10 60

14
5 30
12
10 0 0
3 3.5 4 4.5 5 5.5 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0
Vdd Supply Voltage (Vdc) Vgg1, Vgg2 Gate Volltage (Vdc)

Noise Figure vs. Temperature Reverse Isolation vs. Temperature

10 0
9
+25 C +25 C
8 +85 C -10 +85 C
NOISE FIGURE (dB)

-40 C -40 C
7
ISOLATION (dB)

6 -20
5
4 -30
3
2 -40
1
0 -50
6 7 8 9 10 11 12 13 14 6 7 8 9 10 11 12 13 14
FREQUENCY (GHz) FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
8 - 206
Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0604 HMC441LP3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz

Absolute Maximum Ratings Typical Supply Current vs. Vdd

Drain Bias Voltage (Vdd) +6.0 Vdc Vdd (V) Idd (mA)
8
Gate Bias Voltage (Vgg1,Vgg2) -8.0 to 0 Vdc +5.5 81

AMPLIFIERS - SMT
RF Input Power (RFin)(Vdd = +5.0 Vdc) +20 dBm +5.0 80

Channel Temperature 150 °C +4.5 79

Continuous Pdiss (T = 85 °C) +3.3 72

0.65 W
(derate 10 mW/°C above 85 °C)
+3.0 71
Thermal Resistance
100 °C/W
(channel to ground paddle) Note: Amplifier will operate over full voltage range shown above

Storage Temperature -65 to +150 °C

Operating Temperature -40 to +85 °C

Outline Drawing

NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 8 - 207
Order Online at www.hittite.com
 MICROWAVE CORPORATION
v01.0604 HMC441LP3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz

Pin Descriptions
8 Pin Number Function Description Interface Schematic

1, 3-5, 8-10,
N/C This pin may be connected to RF/DC ground.
12-14, 16
AMPLIFIERS - SMT

This pin is AC coupled and matched to 50 Ohms from

2 RF IN
6.5 - 13.5 GHz.

Optional gate control for amplifier. If left open, the amplifier

6, 7 Vgg1, Vgg2 will run at standard current. Negative voltage applied will
reduce current.

This pin is AC coupled and matched to 50 Ohms from

11 RF OUT
6.5 -13.5 GHz.

Power Supply Voltage for the amplifier. An external bypass

15 Vdd
capacitor of 100 pF is required.

GND Package bottom must be connected to RF/DC ground.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
8 - 208
Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.0604 HMC441LP3
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.5 - 13.5 GHz

Evaluation PCB
8

AMPLIFIERS - SMT
List of Material
Item Description
The circuit board used in the final application should use RF
circuit design techniques. Signal lines should have 50 ohm
J1 - J2 PC Mount SMA Connector
impedance while the package ground leads and exposed
J3 - J7 DC Pin paddle should be connected directly to the ground plane
C1 4.7 µF Capacitor, Tantalum similar to that shown. A sufficient number of VIA holes
C2 - C4 100 pF Capacitor, 0402 Pkg. should be used to connect the top and bottom ground
planes. The evaluation board should be mounted to an
U1 HMC441LP3 Amplifier
appropriate heat sink. The evaluation circuit board shown is
PCB* 106639 Evaluation PCB, 10 mils
available from Hittite upon request.
* Circuit Board Material: Rogers 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 8 - 209
Order Online at www.hittite.com
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