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E4318 - Microwave Circuit Design

Columbia University

Spring 2005

Yves Baeyens
Outline of Lecture 4

Š Short recap of lecture 3 (TL’s), power capacity


Š HW1
Š Network analysis
„ Impedance and admittance matrix
„ Scattering matrix
„ Calculating S-parameters, signal flow graphs
Š Impedance matching and tuning
„ Matching with lumped elements

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 2/46


Announcements

Š CVN has no room available for an extended lecture, so we


will have the rescheduled class Next Tuesday (2/22)at
4:10-6:40PM also in Mudd 1024. Please let me know if this
is a problem for any of you (will be taped)
Š Midterm exam: Thursday 3/3, will provide formula-sheet by
next week,

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 3/46


Calendar

Š Course: Th 4:10-6:40 PM, 1024 Mudd


„ 03/10
„ 01/20
„ 03/17 Spring Holidays
„ 01/27
„ 03/24
„ 02/03 rescheduled
„ 03/31
„ 02/10
„ 04/07
„ 02/17
„ 04/14
„ 02/22 lecture 5
„ 04/21
„ 02/24
„ Final
„ 03/03 Midterm

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 4/46


Recap practical transmission lines
Š TEM: β = ω µε = k kc = 0 vp = c εr

„ the transverse fields of TEM wave are same as static fields,

2 or more conductors needed, no TEM in closed conductor


„ voltage, current and impedance well-defined

Š TE or TM:
„ closed conductor or higher order modes TEM

„ propagation constant β dependent frequency & geometry

β = k 2 − k c2 k =ω µε = 2 π λ

Š quasi-TEM (different εr under and above line)


„ leads to concept of effective dielectric constant

ω
β = =ω µ 0ε 0ε e = ε e k0 vp = c εe
vp

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 5/46


Recap practical transmission lines (2)
Š Attenuation in transmission lines
α = αd + αc αc ~ Rs
Rs =
1
=
ωµ
σδ s 2σ

k 2 tan δ
αd ≅ Np/m (TE or TM waves)

k tan δ
≅ Np/m (TEM waves)
2

Coaxial line:
Š TEM mode, use from DC-to mm-waves
Š EM-fields from static fields using cylindrical coordinates
Š First higher order mode is TE11, cutoff frequency approx.
2 ck c
kc ≅ fc =
a+b 2π εr

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 6/46


Recap (3): Waveguides, (micro)stripline, CPW

Š Rectangular waveguide has limited bandwidth


1
Š dominant mode is TE10: f c 10 = β = k 2 − (π a )2
2 a µε
Š For f<fc, β is imaginary, all field components will decay
exponentially: cut-off or evanescent modes
Š Higher order modes: TE10 , for normal case a>2b waveguide
BW typically factor of two

Š Strip-line: integrated, TEM, low dispersion and loss


Š Microstrip: integrated, quasi-TEM, most used, requires via
Š Coplanar Waveguide: integrated, quasi-TEM, more recent, no
via-holes

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 7/46


Power capacity of TL’s
Š Power in TL’s is limited by voltage breakdown, for air
occurring at breakdown electric field Ed=3x106 V/m
Š Calculation of capacity requires knowledge of E-field
Š For air-filled coax: E ρ = V0 (ρ ln b a ) this is max. for ρ=a
Vmax = Ed a ln b a
and maximum power capacity becomes:
2
Vmax πa 2 Ed2 b
Pmax = = ln
2 Z0 η0 a
Š As expected power capacity increases for larger diameter
cable, limit is cut-off frequency of higher order mode TE11
2 2
0.025 ⎛ cEd ⎞ ⎛ E ⎞
Pmax = ⎜⎜ ⎟⎟ = 5.8 × 1012 ⎜⎜ d ⎟⎟ @10GHz = 520kW
η0 ⎝ fmax ⎠ ⎝ fmax ⎠

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 8/46


Power capacity of waveguides
Š For air-filled rectangular waveguide: E y = Eo sin(πx a ) this is
max. Eo at x=a/2 and maximum power capacity becomes:
abEo2 abEd2
Pmax = =
4Zw 4Zw

Š As expected, power capacity increases for guide size, for


most waveguides b ≅ a/2, to avoid TE20 mode, a<c/fmax, with
fmax the maximum operating frequency. Maximum power
capacity of guide can be shown:
2 2
0.11 ⎛ cEd ⎞ ⎛ E ⎞
Pmax = ⎜⎜ ⎟⎟ = 2.6 × 1013 ⎜⎜ d ⎟⎟ @10GHz = 2300kW
η0 ⎝ fmax ⎠ ⎝ fmax ⎠

Š In practice, safety factor of two + some care for reflections


(for |Γ|=1, max. voltage can double)
Š Higher breakdown using inert gas or dielectric
Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 9/46
Microwave Circuit Analysis

Š Circuit dimensions << wavelength


„ Lumped passive and active components.

„ Negligible phase change throughout the circuit.

„ Circuit theory — Kirchhoff’s laws and Ohm’s law.

Š Circuit dimensions ≈ wavelength


„ Distributed passive and active components.

„ Phase depends on position. Components are characterized


by their dimensions, propagation constants and
characteristic impedances.
„ Microwave network theory.

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 10/46


Impedance, voltage and current

Š The voltage, current and characteristic impedance of


transmission lines are defined as:

V = Φ+ − Φ− = ∫ E ⋅dl
+
I = ∫ H ⋅dl
C+
V
Z0 =
I

Š TEM-type TL have unique V, I and Z0 because:


„ The lines have well defined terminal pairs.

„ The above integrations are independent of path.

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 11/46


Characteristics & calculations non-TEM lines
Š Non TEM-type transmission lines such as rectangular
waveguide do not have unique V, I and Z0 values because:
„ The lines DO NOT have well defined terminal pairs.

„ The above integrations are path dependent.

Š For the dominant TE10 mode in rectangular waveguide,


voltage from the transverse fields can be written as:

− j ωµ a π x − jβ z
V = A ⋅ sin e ∫ dy
π a y

Š The above voltage depends on the position, x, as well as the


length of the integration contour along the y-direction.
Š For non-TEM: equivalent I, V & Z used (not discussed here)

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 12/46


An arbitrary N-port Microwave Network

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 13/46


Impedance Matrix

Š Two-terminal pair ⇒ Port.


Š V and I ⇒ Equivalent V and I.
„ Reference planes are defined to provide a phase reference for the
(equivalent) V and I phasors.
„ At the nth reference plane, the total voltage and current are:
V n = V n+ + V n− I n = I n+ − I n−

Š The impedance matrix relates these voltages and currents:

[V ] = [Z ][I ], Z ij =
Vi
Ij
I k = 0 for k ≠ j

Zii: input impedance


Zij: transfer impedance between ports i and j, i≠j

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 14/46


Admittance Matrix

Š The admittance matrix is defined as:

[I ] = [Y ][V ], Y ij =
Ii
Vj
V k = 0 for k ≠ j

Yii: input admittance


Yij: transfer admittance between ports i and j, i≠j

Š For reciprocal networks (no active devices, ferrites,..), the


impedance and admittance matrices are symmetric: Zij=Zji
and Yij=Yji
Š If the network is lossless, Zij and Yij are purely imaginary

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 15/46


Example: evaluation of impedance parameters
ŠExample: Find Z-parameters two-port T-network
ŠSolution:
„ Z11: input impedance port 1 when port 2 is open circuited
V
Z11 = 1 = Z A + ZC
I1 I =0
2

„ Transfer impedance Z12: measure open-circuit voltage at


port 1 when current I2 applied at port 2:
V V ZC
Z12 = 1 = 2 = ZC
I 2 I = 0 I 2 Z B + ZC
1

„ Z12=Z21 and Z22 can be found:


V
Z 22 = 2 = Z B + ZC
I 2 I =0
1

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 16/46


The Scattering Matrix (S-parameters)
Š Impedances and admittances are easy to work with; however
these parameters cannot be measured easily:
„ VSWR, non-TEM complicate measurement

„ Short and open circuits are difficult to achieve over a

broad-band of microwave frequencies.


„ Active devices, such as power transistors, very often are

not open- or short-circuit stable


Š Scattering parameters deal directly with incident,reflected
and transmitted voltage waves.
Š Scattering parameters can be measured directly with a vector
network analyzer (VNA).
Š Conversion from scattering parameters to other matrix
parameters can be easily done.

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 17/46


Scattering Matrix
Š The scattering matrix of a N-port network with the same
characteristic impedance at all ports is defined as:
⎡V1− ⎤ ⎡ S11 S12 L S1 N ⎤ ⎡V1+ ⎤
⎢ −⎥ ⎢ ⎢ ⎥
⎢V2 ⎥ = ⎢ S 21 S 22 S 2 N ⎥ ⎢V2+ ⎥

⎢ M ⎥ ⎢ M O M ⎥⎢ M ⎥
⎢ −⎥ ⎢ ⎥⎢ ⎥
⎣⎢V N ⎦⎥ ⎣ S N 1 SN 2 L S NN ⎦ ⎣⎢V N+ ⎦⎥

− + Vi −
V = S ⋅V Sij =
V j+
Vk + = 0 for k ≠ j

Š Vn+ and Vn- are the amplitudes of the incident and reflected
voltage waves at the nth port
Š Sij is found by driving port j with incident wave of voltage
Vj+and measuring the reflected wave amplitude Vi-, coming
out of port i, incident waves on all other ports set ot zero,
terminated with matched load
Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 18/46
Example: evaluation of S-parameters
ŠExample: Find S-parameters 3-dB attenuator network
ŠSolution:
„ Sii: reflection coefficient into port i with other ports terminated
„ Sij: transmission coefficient from port j to i, other terminated
„ So, S11: reflection coefficient port 1 when port 2 is terminated in matched
load (Z0=50Ω) − (1)
V Z − Z0
S11 = 1 = Γ (1) + = in
V1+ V + = 0 V2 = 0 Z (1) + Z
in 0 Z on port 2
2 0
(1)
Z in = 8.56 + [141.8(8.56 + 50 )] (141.8 + 8.56 + 50 ) = 50Ω
„ For S21:
z apply incident wave at port 1, V1+
z measure outcoming wave at port 2, V2-

V2−
S21 =
V1+ V + = 0
2 3-db attenuator
Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 19/46
Example: evaluation of S-parameters
Š S11=S22=0, so V1-=0 if port 2 terminated in 50 Ω (V2+=0) ⇒V1+=V1 & V2-=V2
Š So applying V1 and calculating V2 (2x voltage division) :
⎛ 141.8 // 58.56 ⎞⎛ 50 ⎞
V2− = V2 = V1 ⎜ ⎟⎜ ⎟ = 0.707V1
⎝ 141.8 // 58.56 + 8.56 ⎠⎝ 50 + 8.56 ⎠
⎡ 0 0.707⎤
Š So, S21=S12=0.707 S=⎢
⎣0.707 0 ⎥⎦
+2
Š If input power is V1 2 Z0 then output power is:

−2 +2 2 +2 +2
V2 2 Z 0 = S21V1 2 Z 0 = S21 V1 2 Z 0 = V1 4 Z0

so attenuator effectively attenuates with 3-dB


(half power put into 2-port is transmitted,
other half is dissipated in resistors)

3-db attenuator
Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 20/46
Determination [S] from [Z] or [Y] (Z0n equal)
Š Total voltage and current at nth port (and set Z0n=1):
V n = V n+ + V n− I n = I n+ − I n− = V n+ − V n−

Š then: [ Z ][ I ] = [ Z ][V + ] − [ Z ][V − ] = [V ] = [V + ] + [V − ]

Š rewritten as: ([ Z ] + [U ])[V − ] = ([ Z ] − [U ])[V − ]


with [U] the unit or identity matrix,
Š [S] can be determined as: [ S ] = ([ Z ] + [U ])−1 ([ Z ] − [U ])

z −1
Š for one-port this becomes: S11 = 11 in agreement with
z11 + 1
reflection coefficient
Š For [Z] as function of [S] [ Z ] = ([U ] + [ S ])([U ] − [ S ])−1

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 21/46


Generalized scattering Matrix

Š The scattering matrix of a N-port network with characteristic


impedance Z0n at the nth port is defined as:
⎡ b1 ⎤ ⎡ S11 S12 L S1n ⎤ ⎡ a1 ⎤ an = Vn+ Z 0n
⎢b ⎥ ⎢ S S 22 S 2 n ⎥ ⎢ a2 ⎥
⎢ 2 ⎥ = ⎢ 21 ⎥⎢ ⎥ bn = Vn− Z 0n
⎢M⎥ ⎢ M O M ⎥⎢ M ⎥
⎢ ⎥ ⎢ ⎥⎢ ⎥ Z 0n = Z 0 at port n
⎣bn ⎦ ⎣ S n1 Sn2 L Snn ⎦ ⎣an ⎦

b Vi − Z 0 j
[b] = [ S ] ⋅ [a ] Sij = i =
aj +
Vk = 0 for k ≠ j
V j + Z0i
Vk + = 0 for k ≠ j

Š Vn+ and Vn- are the amplitudes of the incident and reflected
voltage waves at the nth port

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 22/46


Power Power Delivered
Š an and bn can be expressed in terms of Vn and In:
an = Vn+ Z 0n = Z 0n I n+ bn = Vn− Z 0n = Z 0n I n−

an + bn = Vn Z0n an − bn = Z 0n I n

an =
1
[Vn + Z0n I n ] bn =
1
[Vn − Z0n I n ]
2 Z 0n 2 Z 0n

Š Average power delivered to the port n is:


⎧ *⎫
1
{ }
Pn = Re Vn I n*
2
1 ⎪ +
= Re⎨ Vn + Vn−
2 ⎪
( )
⎛ Vn+ − Vn− ⎞

⎜ Z




⎩ ⎝ 0n ⎠ ⎪⎭

1 ⎪⎧ ⎛ ⎞
a −b ⎪
*⎫
= Re⎨ Z0n (an + bn )⎜⎜ n n ⎟⎟ ⎬
2 ⎪ ⎝ Z0n ⎠ ⎪⎭ incident

{ ( )}
2 2
1 2 2 a b
= Re an − bn + bnan* − bn*an = n − n
reflected
2 2 2
Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 23/46
Reciprocal and lossless networks

Š For reciprocal networks (no active elements, ferrites),


[Z] and [Y] are symmetric.
Š Similarly, [S]-matrix of reciprocal network is symmetric:
[S]=[S]t ([S]t is transpose matrix)

Š For lossless networks, [Z] and [Y] are purely imaginary


Š The S-parameters of a lossless network form a unitary matrix:
[S]t[S]*=[U], product any column [S] with own conjugate gives
unity, product with conjugate different column gives zero
N
∑ Ski Ski = 1
*
k =1
N
∑ S ki Skj = 0 for i ≠ j
*
k =1

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 24/46


Application of S-parameters
⎡ 0.1∠ 0 0.8∠ 90° ⎤
Š Measured S-parameters 2-port: [S ] = ⎢ ⎥
⎢⎣0.8∠ 90° 0.2∠ 0 ⎥⎦
Š Determine if 2-port is reciprocal or lossless, calculate
return loss at port1 for short at port 2
Š Solution:
„ [S] is symmetric, so 2-port is reciprocal
Not lossless: evaluation 1st row: S11 + S12 = (0.1)2 + (0.8 )2 = 0.65 ≠ 1
2 2
„

„ Calculation reflection coefficient for shorted port 2


(V2+= -V2-) from definition S-parameters:
V1− = S11V1+ + S12V2+ = S11V1+ − S12V2−
V2− = S 21V1+ + S22V2+ = S21V1+ − S22V2−

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 25/46


Application of S-parameters (2)

S21
Š From last equation: V2− = V1+
1 + S 22

Š Dividing 1st equation by V1+, inserting V2-:


V1− S12 S21
Γ= = S11 −
V1+ 1 + S22
( j 0.8)( j 0.8)
= 0.1 − = 0.633
1 + 0.2
Š So return loss becomes:

RL = −20 log Γ = 3.97dB

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 26/46


Shift in Reference Planes

Š Phase reference planes needed


for each port of network
Š S-parameters transformed
when reference planes moved
from original locations
Š For original & new reference:
[V − ] = [ S ] ⋅ [V + ]
[V ′ − ] = [ S ′] ⋅ [V ′ + ]

Š From transmission line theory:


Vn′ + = Vn+ e jθ n
Vn′ − = Vn− e − jθ n

Š With θn=βnln electrical length of outward shift reference plane


Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 27/46
Shift in Reference Planes
Š Writing S-parameter equation in matrix form:
⎡ e jθ 1 0 ⎤ ⎡ e − jθ 1 0 ⎤
⎢ ⎥ ⎢ ⎥
⎢ e jθ 2 ⎥[V ′ − ] = [ S ]⎢ e − jθ 2 ⎥[V ′ + ]
⎢ O ⎥ ⎢ O ⎥
⎢ 0 jθ n ⎥ ⎢ 0 − jθ n ⎥
⎣ e ⎦ ⎣ e ⎦
Š Multiplying with inverse matrix on left:
⎡ e − jθ 1 0 ⎤ ⎡ e − jθ 1 0 ⎤
⎢ ⎥ ⎢ ⎥

[V ′ ] = ⎢ e − jθ 2 ⎥[ S ]⎢ e − jθ 2 ⎥[V ′ + ]
⎢ O ⎥ ⎢ O ⎥
⎢ 0 − jθ n ⎥ ⎢ − jθ n ⎥
⎣ e ⎦ ⎣ 0 e ⎦
Š Gives expression for new S-parameter matrix
⎡ e − jθ 1 0 ⎤ ⎡ e − jθ 1 0 ⎤
⎢ ⎥ ⎢ ⎥
[ S ′] = ⎢ e − jθ 2 ⎥[ S ]⎢ e − jθ 2 ⎥
⎢ O ⎥ ⎢ O ⎥
⎢ 0 − jθ n ⎥ ⎢ − jθ n ⎥
⎣ e ⎦ ⎣ 0 e ⎦

Š Note: Snń=e-2jθn, phase twice shifted by electrical length of


shift in terminal plane n (wave travels twice along length)
Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 28/46
The Vector Network Analyzer

Critical component is directional coupler (will see later)


Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 29/46
The transmission (ABCD) Matrix

Š Used to calculate cascade connection of networks by


multiplying ABCD matrices of individual two-ports
I2 flowing out port 2!
Š Defined as:
V1 = AV2 + BI 2
I1 = CV2 + DI 2

⎡V1 ⎤ ⎡ A B ⎤ ⎡V2 ⎤
⎢ I ⎥ = ⎢C D ⎥ ⎢ I ⎥
⎣ 1⎦ ⎣ ⎦⎣ 2 ⎦

Š Cascade connection:
⎡V1 ⎤ ⎡ A1 B1 ⎤ ⎡V2 ⎤ ⎡V2 ⎤ ⎡ A2 B2 ⎤ ⎡V3 ⎤
⎢ I ⎥ = ⎢C D1 ⎥⎦ ⎢⎣ I 2 ⎥⎦ ⎢ I ⎥ = ⎢C D2 ⎥⎦ ⎢⎣ I 3 ⎥⎦
⎣ 1⎦ ⎣ 1 ⎣ 2⎦ ⎣ 2
⎡V1 ⎤ ⎡ A1 B1 ⎤ ⎡ A2 B2 ⎤ ⎡V3 ⎤
So: ⎢ I ⎥ = ⎢C D1 ⎥⎦ ⎢⎣C 2 D2 ⎥⎦ ⎢⎣ I 3 ⎥⎦
⎣ 1⎦ ⎣ 1
Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 30/46
ABCD-parameters of some useful 2-ports
Š Library building blocks
Š Not commutative
Š Example 1st network:
V1
A = =1
V2 I2 =0

V1 V1
B = = = Z
I2 V2 = 0
V1 Z

I1
C = = 0
V2 I2 =0

I1 I1
D = = =1
I2 V2 = 0
I1

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 31/46


Relation Transmission and Impedance Matrix
Š Z-parameters (consistent with sign convention I2 ABCD):
V1 = I1 Z11 − I 2 Z12
V2 = I1 Z 21 − I 2 Z 22
Š Results in calculation ABCD:
V1 I1 Z11 Z11
A= = =
V2 I2 =0
I1 Z 21 Z 21
V1 I1 Z11 − I 2 Z12 I1 Z11
B= = = − Z12
I2 V I2 I2 V
2 =0 V 2 =0 2 =0
I1 Z 22 Z Z − Z12 Z 21
= Z11 − Z12 = 11 22
I1 Z 21 Z 21
I I1 1
C= 1 = =
V2 I = 0 I1 Z 21 Z 21
2
I1 Z 22
D= =
I2 V Z 21 Reciprocal: AD-BC=1
2 =0

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 32/46


Conversions between 2-port parameters (p.211)

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 33/46


Equivalent circuits for two-ports

Š Discontinuity: storage
electrical-magnetic energy:
results in reactances
Š Example: coax-to-µstrip
transition representation:
„ Black-box S-parameters

„ Equivalent circuit with #

idealized components

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 34/46


T and π-equivalent networks reciprocal 2-ports

Š For reciprocal networks, six


independent parameters needed
(real, imag. 3 matrix elements)
Š Leads to two possible
equivalent networks:
„ using impedance: T
„ using admittance: π
Š Lossless networks: elements
purely reactive

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 35/46


Example: equivalent network spiral inductor
Π-equivalent circuit spiral inductor
L R

C1 C2

⎛ 1 ⎞ ⎛ 1 ⎞
L = − Im ⎜⎜ ⎟⎟ ω R = − Re ⎜⎜ ⎟⎟
⎝ Y 12 ⎠ ⎝ Y 12 ⎠ 5 50

Im (Y 11 + Y 12 ) Im (Y 22 + Y 12 )

Extracted groundcapacitance [fF]


C1 = C2 =

Extracted inductance [nH] & R [ž]


4 40
ω ω C1

Extraction procedure: 3 C2 30

R
Š Measure S-parameters (well- 2 20

defined reference planes) 1


L
10

Š Calculate L,R,C,.. afo frequency 0 0


1 10 50
Š Take average where constant Frequency [GHz]

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 36/46


Signal flow graphs

Š Technique for analysis of microwave networks in terms of


transmitted and reflected waves
Š Construction of signal flow graph: primary components are
nodes and branches
„ Nodes: each port I of microwave network has two nodes

ai and bi. Node ai is identified with wave entering port i,


bi with wave reflected from port I
„ Branches: directed path between a-node and b-node

representing signal flow, each branch has associated S-


parameter or reflection coefficient

See also Agilents application note on S-parameters posted on website


Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 37/46
Signal flowgraph of two-port

Wave a1 incident at port 1 split, part through S11 and out port 1
as reflected wave, part transmitted through S21 to node b2. At
node b2 wave goes out port 2, can be partly reflected by load
re-enter two-port at a2 , reflected back out port 2 through S22,
part transmitted out port 1 through S12
Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 38/46
Network for one-port network and source

Š Signal flow graph of microwave network can be solved for


ration of combination wave amplitudes using decomposition
rules (or using Mason’s rule control system theory)

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 39/46


Decomposition rules signal flow graphs
Š Series rule
V3 = S 32V2 = S32 S 21V1

Š Parallel rule
V2 = SaV1 + SbV1 = ( Sa + Sb )V1

Š Self-loop rule
V2 = S 21V1 + S 22V2
S21
V2 = V1
1 − S 22

Š Splitting rule

V4 = S42V2 = S 21 S42V1

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 40/46


Example signal flow graph (1)

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 41/46


Example signal flow graph (2)

a2 = Γl b2 so S 22a2 collapsed to S 22Γl b2

Another example in book involves application of signal flow


graphs to determine error boxes of TRL-calibration VNA
Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 42/46
Impedance Matching and Tuning
Š Matching network: lossless (ideally) network matching
arbitrary load impedance (non-zero real part) to a TL

Š Maximum power is delivered when the load and generator


are matched to the line.
Š Proper input impedance transformation of sensitive receiver
components (antenna, LNA, etc.) improves the S/N ratio
Š For power amplifier often transformation load to optimum
load line needed to increase power output active device
Š Impedance matching in a power distribution network (such
as antenna array feed network) will reduce amplitude and
phase errors.
Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 43/46
Transforming Network Selection Criteria

Š Complexity — A simpler impedance transformation


network is usually cheaper, more reliable, and less lossy
than a more complex design.
Š Bandwidth — typical matching network gives only match
at single frequency, larger BW → increase in complexity
(for instance multi-section transformers).
Š Implementation — Short-circuited stubs in coax and
waveguide (shorting stubs easy to implement in waveguide).
Open-circuited stubs in stripline and microstrip.
Š Adjustability — some applications may require adjustments
(tuning stubs with micrometer in waveguides).

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 44/46


Lossless Matching Network
ΓL
Z0

Š In general, for network matching an arbitrary load


impedance to a transmission line:
„ To avoid unnecessary power loss, matching network is

ideally lossless.
„ The impedance looking in to the matching network is Z0.

„ Reflections are eliminated on the transmission line to the

left of the matching network.


„ There will be multiple reflections between the matching

network and the load.

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 45/46


Homework & next lecture!!

Š Pozar, “Microwave Engineering” (3rd Ed.!) Will put


on site!
„ 4.10
„ 4.16

Š Due date: 2/24

Š Next week we’ll review finish impedance matching


and review HW2

Dr. Y. Baeyens E4318-Microwave Circuit Design L.4 – 46/46

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