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T.Arslan
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• Core Area
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1
Physical Block Attributes
Block
abstract
Power
rings
Block’s core
(cells 65%
routing 35%) Hierarchical
pin
H
P
L W
Area=(L+2W+2P) * (H+2W+2*P)
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Speed, Power ?
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Clocking Strategy
• Clock planning should be employed
early during the design process.
• Based on the analysis of constituent
blocks a global clock frequency need to
be chosen. +
• Selection of appropriate clocking
structure , and whether to
• Use PLLs, and how.
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2
Clock Parameters
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Issues
3
Clocking Structures
•
• …
•
•
•
…
H-tree
Balanced Grid
tree
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HTree
Grid
BTree
Load
4
Clock Tree and Block Hardening
Skew Insertion_delay
•
•
+
Optimisation
Block’s core
(cells 65%
routing 35%)
Full Layout
OR
{Accurate Model}
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Hierarchical Verilog
DP
Routed DEF
Partitioning
Block 1 Block 2
Top level DEF Lib LEF
LEF
DP
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5
Parasitic Extraction
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PP
uses the Parallel Plate mode for
extraction. This mode gives you the most
control over the extraction, by using the
capacitance and edge capacitance values
from your LEF file in the following
formula:
Capacitance (wire) =
(L*W) + Capacitance + 2 * (L+W) *
EdgeCapacitance (where L=Length and
W=Width)
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6
Extraction Models cont.
VDMF
uses the Van Der Meijs Fokkema (VDMF)
formula mode for extraction. This mode
gives you less control over the extraction
because Report RC will just use the
following formula:
Extraction formats
RSPF
reports in the Reduced Standard Parasitic
Format. This is simply a reduced format, much
more simplified than the more detailed DSPF
report format.
DSPF
reports in the Detailed Standard Parasitic
Format. This format reports every resistor and
capacitor in your design, producing a very
large, detailed report.
GE/SE
reports in the old GE/SE format. This format
used to be called "Standard" and contains the
same information as the new RSPF format, but
presented in a different format.
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7
Hierarchical Parasitic Extraction:
RSPF
-Useful for accurate cross coupling parasitics for crosstalk analysis
-Performed for all routed full chip
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8
Sample File
*|RSPF 1.5
*|DESIGN "chip"
*|DATE "27 February 2000, 16:40:27"
*|VENDOR "Cadence Design Systems,
Inc."
*|PROGRAM "Silicon Ensemble"
*|VERSION "5.2.9"
*|DIVIDER /
*|DELIMITER :
*|BUSBIT []
*
* Resistance Units : 1 ohms
* Capacitance Units : 1 pico farads
*
*
.SUBCKT chip OUT IN
*
*|GROUND_NET VSS
*
* TIMING.CAPACITANCE.MODEL = PP
*
* rst_s2 is a one-pin net.
*
*|NET CRF/Mem\[10\]\[7\] .012641PF
*
*|DRIVER CRF/Mem\[10\]_reg_7:Q CRF/Mem
\[10\]_reg_7 Q
*|S (CRF/Mem\[10\]_reg_7:Q:OUTP1 0.0
0.0)
*
R2 CRF/Mem\[10\]_reg_7:Q CRF/Mem\[10\]
_reg_7:Q:OUTP1 2.473233
C1 CRF/Mem\[10\]_reg_7:Q:OUTP1 VSS
.012088PF
C2 CRF/Mem\[10\]_reg_7:Q VSS .000553PF
*|LOAD CRF/i_873:A CRF/i_873 A
*|S (CRF/i_873:A:INP1 0.0 0.0)
E1 CRF/i_873:A:INP1 VSS CRF/Mem\[10\]
_reg_7:Q VSS 1.0
R3 CRF/i_873:A:INP1 CRF/i_873:A .032478
C3 CRF/i_873:A VSS 1.0PF
*
*|NET CRF/Mem\[10\]\[6\] .015852PF
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T.Arslan
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9
Floor plan considerations
Analog
Vss metal shielding Digital hndb lndb AB Power
Power rails
10
Guard Rings & Noise filtering
Internal Peripheral
guard ring
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Digital
guard Digital
resistor
capacitor
Resistor guard
Cap guard ring
ring
analog
Analog
guard
ring
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11
AMS Virtual Component Packaging
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-.
LEF Block
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12
Netlist View Generation
Tool
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Transistor netlist
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13
Static Timing Model Generation
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14
IP Block Authoring: Signal
Integrity Issues in
Block Authoring
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15
Signal and design Integrity in DSM
Block Design
• Signal
-Crosstalk: errors+ Timing
-IR drop: power supplies
• Design
• Electromigration on power wires
• Hot Electron effects on devices
• Wire Self Heat on clocks and signals
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Wire R
Driver R
Grounded C
VW
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16
Crosstalk Effects - Timing Delays
Driver
R Grounded Coupling C
C
AW
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17
Cross talk Modeling
in TLF and LEF Files
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Timing depends
on power pin
Voltage Drop
Pad limits
Components with high activity have poor supply hence act slower.
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18
Supply Electromigration
Current limit
related to
Wire width
Pad
High current causes degradation of the wire. This causes failure during the
lifetime of the product.
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19
Wire Self Heat
•Typically occurs at clock nets and other with high switching frequency.
•A wire (metal) expands and contracts due to switching activity, but oxide
does not.
⇒Wire will break or pass signal with reduced efficiency.
Oxide Metal
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Analysis: Compare slew with that of adjacent cells if not close, then
either:
-insert buffer (with better s-characteristics)
-upsize Rsource
Rwire
Rsource
Cwire
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20
Dealing with Wire Self Heat within Block
Rwire
Rsource
Cwire
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Shielded
Buffer
Routing
Insertion
Rsource
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21
Hot Electron: Slow input + Large Load
Fixes:
•Downsize effected driver, or
•Upsize driver on upstream logic to speed up input transition time
•insert driver on driver et to reduce output
Sketch the waveform profile !
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delete
Fixes:
•Upsize effected driver to reduce input transition rate,
•Remove intermediate buffer on driver net to increase load
capacitance
22
Conclusions
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Conclusions
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23