PHOTODIODE

GaAsP photodiode
Diffusion type
Photodiode for visible light detection

Features Applications
l Low dark current l Analytical instrument
l High stability l Color identification

■ General ratings / Absolute maximum ratings

Absolute maximum ratings
Dimensional Effective
Active area Reverse Operating Storage
outline/ active
Type No. Package size voltage temperature temperature
Window area
VR Max. Topr Tstg
material *
(mm) (mm2) (V) (°C) (°C)
G1115 ➀/K TO-18 1.3 × 1.3 1.66
G1116 ➁/K TO-5 2.7 × 2.7 7.26
G1117 ➂/K TO-8 5.6 × 5.6 29.3
G1118 ➃/R Ceramic 1.3 × 1.3 1.66 5 -30 to +80 -40 to +85
G1120 ➄/R Ceramic 5.6 × 5.6 29.3
G3067 ➅/L TO-18 1.3 × 1.3 1.66
G2711-01 ➆/R Plastic 1.3 × 1.3 1.66

■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity Temp. Terminal
Spectral Peak Short circuit Dark Rise time Shunt
S coefficient capacitance
response sensitivity current current tr resistance
(A/W) Isc ID of Ct NEP
range wavelength VR=0 V Rsh
Type No. I D V R=0 V
λ λp GaP He-Ne 100 lx Max.
TCID
RL=1 kΩ VR=10 mV
f=10 kHz
λp LED laser
Min. Typ. V4=10 mV V4=1 V Min. Typ.
560 nm 633 nm
(nm) (nm) (µA) (µA) (pA) (pA) (times/°C) (µs) (pF) (GΩ) (GΩ) (W/Hz1/2)
G1115 0.12 0.15 1 10 1 300 10 80 1.5 × 10-15
G1116 0.45 0.6 2.5 25 4 1400 4 30 2.5 × 10-15
G1117 2 2.5 5 50 15 6000 2 15 3.5 × 10-15
G1118 300 to 680 640 0.3 0.29 0.29 0.12 0.15 1 10 1.07 1 300 10 80 1.5 × 10-15
G1120 2 2.5 5 50 15 6000 2 15 3.5 × 10-15
G3067 0.75 0.95 1 10 1 300 10 80 1.5 × 10-15
G2711-01 0.15 0.18 1 10 1 300 10 80 1.5 × 10-15
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
 GaAsP photodiode Diffusion type
■Spectral response ■Photo sensitivity temperature characteristic
(Typ. Ta=25 ˚C) (Typ.)
0.5 +1.5

TEMPERATURE COEFFICIENT (%/˚C)

0.4
PHOTO SENSITIVITY (A/W)

+1.0

0.3

+0.5

0.2

0
0.1

0 -0.5
200 400 600 800 200 400 600 800

WAVELENGTH (nm) WAVELENGTH (nm)

KGPDB0019EA KGPDB0020EA

■Rise time vs. load resistance ■Dark current vs. reverse voltage
(Typ. Ta=25 ˚C, VR=0 V) (Typ. Ta=25 ˚C)
10 ms 1 nA

G1117, G1120
1 ms
G1116 100 pA
DARK CURRENT
RISE TIME

100 µs G1117, G1120

10 pA G1116

10 µs G1115, G1118
G3067, G2711-01

1 pA
1 µs
G1115, G1118
G2711-01, G3067

100 ns 2 100 fA
3 4 5 6 0.001 0.01 0.1 1 10
10 10 10 10 10

LOAD RESISTANCE (Ω) REVERSE VOLTAGE (V)

KGPDB0021EA KGPDB0022EA

■Shunt resistance vs. ambient temperature ■Short circuit current linearity

(Typ. VR=10 mV) (Typ. Ta=25 ˚C, A light source fully illuminated)
10 TΩ 100
G1115, G1118
G3067, G2711-01 10-2
1 TΩ RL=100 Ω

G1116 -4
OUTPUT CURRENT (A)

10
SHUNT RESISTANCE

100 GΩ
10-6

10 GΩ 10-8

-10
10
1 GΩ G1117, G1120
10-12
100 MΩ
10-14
Refer to NEP value in characteristic table.
10 MΩ 10-16 -16 -14 -12 -10 -8 -6 -4 -2 0
-20 0 20 40 60 80 10 10 10 10 10 10 10 10 10

AMBIENT TEMPERATURE (˚C) INCIDENT LIGHT LEVEL (lx)

KGPDB0023EA KGPDB0008EA
 GaAsP photodiode Diffusion type
■Dimensional outlines (unit: mm)

➀ G1115 ➁ G1116

5.4 ± 0.2 9.1 ± 0.2

WINDOW WINDOW
4.7 ± 0.1 8.1 ± 0.1

3.55 ± 0.2
3.0 ± 0.2 5.9 ± 0.1

4.1 ± 0.2
2.9
PHOTOSENSITIVE PHOTOSENSITIVE
2.4

SURFACE SURFACE
0.45

20
0.45 LEAD
14

LEAD

5.08 ± 0.2
2.54 ± 0.2

CONNECTED CONNECTED
TO CASE TO CASE Borosilicate glass window may extend a
Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper
maximum of 0.1 mm beyond the upper surface of the cap.
surface of the cap.

KGPDA0012EA KGPDA0013EA

➂ G1117 ➃ G1118

13.9 ± 0.2 CATHODE

WINDOW TERMINAL MARK 6.0 ± 0.2
10.5 ± 0.1 12.35 ± 0.1
5.0 ± 0.2

ACTIVE AREA
5.0 ± 0.2

PHOTOSENSITIVE
SURFACE
1.9

0.45
1.5 ± 0.2

PHOTOSENSITIVE
15

LEAD SURFACE
0.6

7.5 ± 0.2
14

MARK ( 1.4)
0.45
LEAD

3.0 ± 0.2

CONNECTED
TO CASE Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.

KGPDA0014EA KGPDA0002EA
 GaAsP photodiode Diffusion type

➄ G1120 ➅ G3067

2.15 ± 0.3
10.1 ± 0.1 5.4 ± 0.2
4.65 ± 0.1
ACTIVE AREA

8.9 ± 0.1

4.5 ± 0.2
2.0 ± 0.1

PHOTOSENSITIVE

2.4
SURFACE
0.65
0.3

0.45

14
LEAD
10.5

0.5
LEAD
2.54 ± 0.2

9.2 ± 0.3
7.4 ± 0.2
ANODE
TERMINAL MARK
8.0 ± 0.3

CONNECTED
TO CASE
Coating resin may extend a maximum
of 0.1 mm beyond the upper surface
of the package.

KGPDA0008EA KGPDA0009EA

➆ G2711-01

4.6 ± 0.2
(INCLUDING BURR)
0.5
0.7
(INCLUDING BURR)
5.6 ± 0.2

2.54
5.4

5.5
10˚

3˚

4.5 0.6
1.0
5.75 ± 0.2 PHOTOSENSITIVE 2.0
SURFACE
5˚

ANODE
CATHODE
NC
4.5 ± 0.4

CATHODE
0.25
3˚

7.5 ± 5˚

KGPDA0003EA

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KGPD1002E01
Apr. 2001 DN