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a. Please answer all of the questions in the spaces provided. If you need additional space,
use the backs of the sheets.
b. Partial credit is achievable, so include all of your calculations and clearly
indicate what you are trying to do.
c. Note that you have modicum of choice in the first question.
d. The relative credit assigned to each question is indicated as a prudent time
allocation. That is, there is a possible total credit of 180.
a. In the space below, plot the net charge density (sign and magnitude) and the
built-in electric field as a function of position along a line which intersects a pn
homojunction at right angles. The n-side of the junction has a doping level that is 10
times that of the p-side (i.e., ND = 10 N A). Label and/or note important features.
E(x)
Q+
qN(x)
Q-
SAMPLE FINAL EXAMINATION PAGE-2
b. Suppose that a particular BJT has the following collector current characteristic curve:
Using this characteristic, find the common emitter current gain (CECG) and the
common base current gain (CBCG) of the transistor when it is operated in the
“active mode.” Also find the Early voltage (VA) of the transistor.
c. What does the circuit illustrated below do ? Explain how it does it..
Vc n-channel MOSFET
- Vc p-channel MOSFET
−
+
i.) What is meant by the “input offset voltage” of an op amp? How is it measured?
+V O
+V supply
−
'
+V O RL
+
+
Vin -V supply
−
f. For a diode with the characteristic depicted below, calculate the effective or small-signal
resistance at a forward bias of 0.5 volts.
Slope Method:
∆V 0.7 V
reff = = = 4.5 kΩ
∆ I 155 µA
Analytic Method:
V V
Assume that I (V1 ) = I0 exp − 1 ≈ I 0 exp
VT VT
1 d V I (V ) V1 − V2
therefore = I0 exp = where VT =
reff dV VT VT I (V )
ln 1
I (V2 )
From graph: I (0.50 V ) = 45.5 µA; I (0.66 V ) =100 µA; I (0.76 V ) = 200 µA
V −V 0.76 − 0.66 0.10
VT = 1 2 = = = 0.144 V
I (V1 ) 200 .693
ln ln
I(V2 ) 100
1 I (V ) 45.5 µA 1
= = =
reff VT 144 mV 3.2 kΩ
SAMPLE FINAL EXAMINATION PAGE-6
g. In the space below, sketch a complete small signal equivalent circuit of a MOS
transistor (assume that the body is not connected to the source). Identify each
element of the equivalent circuit and give a “ball park” estimate of its magnitude.
h. In the space below, draw a cascode amplifier stage and briefly describe the
advantages this configuration offers in circuit design.
s 1
A( s) = 10 2
s + 2π × 10 1 + s /2 π × 10
2 5
In the space below sketch a Bode plot for its magnitude and specify the midband
gain, the lower 3-dB frequency and the upper 3-dB frequency.
ω /2π × 10 2 1
A (ω) = 10
2
1 + (ω /2π × 10 ) 1+ (ω /2π × 10 )
2 2 5 2
f
20 log A( f ) = 40 + 20 log − 20 log 1+ ( f /10 2 ) − 20log 1 + ( f /10 5 )
2 2
10
2
SAMPLE FINAL EXAMINATION PAGE-7
60 dB 20 log A ( f )
Midband Gain
40 dB
20 dB
0 dB
-20 dB
0.1 1.0 10
2
10
3
10
4
10
5
10
6
10
7
f = ω/2π
-40 dB
f
20 log 2
10 2 2
20 log 1 + ( f /102 ) 20 log 1 + ( f /105 )
junction diode
Rs
−
vout
vs
+
ideal op amp
SAMPLE FINAL EXAMINATION PAGE-8
V
Assume that I (V ) = I 0 exp − 1
n kT
VS VOUT
therefore = I0 exp − 1
RS n k T
VOUT
so that T=
V
n k ln S + 1
I 0 RS
k. Consider the three Zener diode circuits illustrated below. In the spaces provide, sketch
a representation of the time dependent output signal for each of the three cases
SAMPLE FINAL EXAMINATION PAGE-9
l. In the following circuit, find vo in terms of vs1 and vs2 using the ideal op amp model.
VS1 − VS 2 V −V V + 2 VS2
V+ = VS2 +2 k Ω = VS1 - 4 k Ω S1 S 2 = S1
6 kΩ 6 kΩ 3
1
V− = V
9 OUT
therefore VOUT = 3 (VS1 + 2 VS2 )
n. The following important characteristic curves for a particular BJT which tells us a
good deal about that device performance.
Briefly discuss the physics of this curve. What is the origin of this current? Why
does have the shape that it does? What does it tell us about the given transistor‘s
performance?
R2
R1
−
+
R3
+
+ + VO
V1 V2 R4
− −
v- − v1 v0 − v - R2 R1
= ⇒ v- = v1 + v
R1 R2 R1 + R2 R1 + R2 0
R4
v+ = v
R3 + R4 2
R4 R2 R1
v+ = v- ⇒ v2 = v1 + v
R3 + R4 R1 + R2 R1 + R2 0
R1 + R2 R4 R2
v0 = v − v
R1 R3 + R4 2
R1 + R2
1
R1 + R2 R4 vd R2 vd
= v + − v −
R1 R3 + R4 2 R1 + R2 2
cm cm
vd R2 R4 (R1 + R2 ) R R − R2 R3
= + + vcm 4 1
2 R1 R1 (R3 + R4 ) R1 (R3 + R4 )
1 R2 R4 (R1 + R2 ) R R − R2 R3
Gd = + ⇒ Gcm = 4 1
2 R1 R1 (R3 + R4 ) R1 (R3 + R4 )
Gd 1 R2 (R3 + R4 ) + R4 ( R1 + R2 )
CMRR = 20 log = 20 log
Gcm 2 R4 R1 − R2 R3
SAMPLE FINAL EXAMINATION PAGE-12
+7V
RB 10kΩ
C +
Vout (t)
+ -
Vin (t)
-
a. By drawing a load line on the characteristic curve, choose the circuit quiescent
point or DC operating point to maximize the AC voltage swing of Vout(t). What are
the DC values of the bias current, the collector current, R B and Vout at the quiescent
point (carefully specify units)?
DC bias current = 3.5 µA
b. For these quiescent point values, sketch in the space on the next page a complete
small-signal equivalent circuit of the transistor including values and units for all
parameters of the equivalent circuit (neglect any high frequency effects).
SAMPLE FINAL EXAMINATION PAGE-14
vIN vOUT
10 kΩ
R = 1.8 MΩ r ο = 89 kΩ
B
c. Again at the quiescent point found above and at frequencies where we can neglect
capacitive effects, find the small-signal voltage gain, input impedance and output
impedance of the circuit.
Small-signal voltage gain = (0.016 Ω-1) (89 || 10) kΩ = 144
I ref
Io
Q3
Q1 Q2
Measurements on the three circuits below yield the voltages indicated. Find the value of β
for each of the pnp transistors.
+5V +5V + 10 V
1 kΩ
+9V
+ 4.3 V + 4.3 V + 8.3 V
(a) β =
(b) β =
(c) β =
SAMPLE FINAL EXAMINATION PAGE-17
10 VGS = 4.5V
mA
iD
VGS = 4.0V
5
mA VGS = 3.5V
VGS = 3.0V
VGS < Vt
Vt = 2V
VDS
-5
mA 0.0 1.0 2.0 3.0 4.0 5.0 6.0
V V V V V V V
Suppose two such transistors are used in a common source, NMOS amplifier configuration
where one transistor serves as the load of the other . Assume that the amplifier is powered
by a single-sided + 6 volt supply.
b. Draw directly on the characteristic curve above the appropriate load curve for the
amplifier. See characteristic curve
dc drain current = 3 mA
d. For these quiescent point values, find the ac voltage gain of the amplifier.
voltage gain ≈ 1
As the first step in analyzing the following BJT amplifier, replace the transistor with its low-
frequency “T” equivalent circuit. Then, derive the gain vE/vi, the gain vC/vi, and the input
impedance of the amplifier.
+VCC
RC
vC
+
vi vE
−
RE
-VEE
SAMPLE FINAL EXAMINATION PAGE-19
gm ( vi − vE ) + C = 0 gm ( vi − vE ) +
v vC v
= E
RC ro || RC ro
Node E Node E
vE v vE vE v v
= i + = C+ i
re || RE re ro re || RE ro re
Results (including ro ):
ro || RC
re || RE
− gm (r || R )
vE re ro e E
=
vi r || R r || R
1− gm o C (re || RE ) + o C ( re || RE )
ro ro RC
r || R r r || R r || R
−gm (ro || RC ) e E 1+ o + e E o C
vC ro RE re ro s
=
vi r || R r || R
1− gm o C (re || RE ) + o C ( re || RE )
ro ro RC
re || RE ro || RC
+
ro RC
( re || RE )
gm - 1
1 i RE
= b = −
ro || RC
(re || RE ) + ro || RC ( re || RE )
Rin vi re
1− gm ro ro RC
For a particular npn transistor operating in the active mode the collector current is
measured to be 1 mA and 10 mA for base-to-emitter voltages of 0.63 V and 0.70 V,
respectively. Find the corresponding values of n and IS for this transistor.
VBE
Assume that IC (VBE ) = IS exp
nV T
1 (V − V2 ) 1 (0.7 − 0.63) V 70 mV 1
therefore n = 1
2.3 = 1.2
= =
VT I (V1 ) 25 mV 10 25 mV
ln ln
I (V2 ) 1
IC (VBE ) 10 mA 10 mA
and I S = = = = 0.74 × 10 -12 A
VBE 700 mV 1.36 × 1010
exp exp
n VT 30 mV
a. If two such devices are connected in parallel and a forward bias o 0.65 V is applied
across the two base-emitter junctions, what total collector current do you expect?
b. Draw a small-signal version of this complete emitter-follower that utilizes the most
appropriate BJT small-signal equivalent circuit.
c. Using this small-signal circuit, find an expression for the voltage gain of the amplifier
d. Again using this small-signal circuit, find an expression for the input impedance of the
amplifier.
a. Assuming that the op amp is ideal, find the transfer function H (s) = V2 (s ) V1 (s ) .
SAMPLE FINAL EXAMINATION PAGE-22
V1 ( s) −V2 (s)
=
10 + s
3
10 6
103 +
s
106 10 3
10 + 3
1+
V ( s)
H (s ) = 2 = − s =− s
V1 (s) 103 + s s
1+ 3
10
b. Describe the behavior of this transfer function in both the high and low frequency
limits.
V ( s) 10 3
H (s ) = 2 → − ⇒0
V1 (s) ω→∞
s
V ( s) 10 3
H (s ) = 2 0→ − ⇒∞
V1 (s) ω→
s
b. Draw a small-signal version of this complete source-follower that utilizes the most
appropriate MOSFET small-signal equivalent circuit.
c. Using this small-signal circuit, find an expression for the voltage gain of the amplifier
c. Again using this small-signal circuit, find an expression for the input impedance of the
amplifier.