BDX53/A/B/C

BDX53/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
• Power Darlington TR
• Complement to BDX54, BDX54A, BDX54B and BDX54C respectively

1 TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BDX53 45 V
: BDX53A 60 V
: BDX53B 80 V
: BDX53C 100 V
VCEO Collector-Emitter Voltage : BDX53 45 V
: BDX53A 60 V
: BDX53B 80 V
: BDX53C 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 8 A
ICP *Collector Current (Pulse) 12 A
IB Base Current 0.2 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BDX53 IC = 100mA, IB = 0 45 V
: BDX53A 60 V
: BDX53B 80 V
: BDX53C 100 V
ICBO Collector Cut-off Current : BDX53 VCB = 45V, IE = 0 200 µA
: BDX53A VCB = 60V, IE = 0 200 µA
: BDX53B VCB = 80V, IE = 0 200 µA
: BDX53C VCB = 100V, IE = 0 200 µA
ICEO Collector Cut-off Current : BDX53 VCE = 22V, IB = 0 500 µA
: BDX53A VCE = 30V, IB = 0 500 µA
: BDX53B VCE = 40V, IB = 0 500 µA
: BDX53C VCE = 50V, IB = 0 500 µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V, IC = 3A 750
VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA 2 V
VBE(sat) * Base-Emitter Saturation Voltage IC = 3A, IB = 12mA 2.5 V
VF * Parallel Diode Forward Voltage IF= 3A 1.8 2.5 V
IF= 8A 2.5 V
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BDX53/A/B/C
Typical Characteristics

100000 3.4

VCE = 3V 3.2

VBE(sat)[V], SATURATION VOLTAGE

IC = 250IB
3.0

2.8
hFE, DC CURRENT GAIN

2.6
10000
2.4

2.2

2.0

1.8
1000
1.6

1.4

1.2

1.0

100 0.8
0.1 1 10 0.1 1 10

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

3.2 3.0

3.0 IC = 250IB 2.8

VCE(sat)[V], SATURATION VOLTAGE

VF(sat)[V], FORWARD VOLTAGE

2.8 2.6

2.6 2.4

2.4 2.2

2.2 2.0

2.0 1.8

1.8 1.6

1.6 1.4

1.4 1.2

1.2 1.0

1.0 0.8

0.8 0.6

0.6 0.4
0.1 1 10 0.1 1 10

IC[A], COLLECTOR CURRENT IF[A], FORWARD CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Damper Diode Forward Voltage

100 80

70
IC[A], COLLECTOR CURRENT

PD[W], POWER DISSIPATION

IC Max. (Pulsed) 60
10

10
us

50
1m

IC Max. (Continuous)
s

100us 40
D
C

30
1

20
BDX53
BDX53A
10
BDX53B
BDX53C
0.1 0
1 10 100 1000 0 25 50 75 100 125 150 175

o
VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BDX53/A/B/C
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

Bottomless™ ISOPLANAR™ SyncFET™
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FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E

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