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Email: Lynn.Fuller@rit.edu
MicroE webpage: http://www.microe.rit.edu
OUTLINE
Introduction
Gain Function and Bode Plots
Low Frequency Response of CE Amplifier
Millers Theorem
High Frequency Response of CE Amplifier
References
Homework Questions
INTRODUCTION
INTRODUCTION
Thus the decibel is often used to express voltage gains. (Really only
correct if RL=Rin but many people are not precise about this point)
K (s-z1)(s-z2)(s-z3)…
A(s) = (s-p1)(s-p2)(s-p3)…
Where z1, z2, z3 are zeros, p1, p2, p3 are poles
K (jω-z1)(jω-z2)(jω-z3)…
A(jω) = (jω-p1)(jω-p2)(jω-p3)…
A0 (jω/ω1)Ν(jω/ω3+1)(jω/ω5+1)…
A(jω) Institute =
Microelectronic Engineering (jω/ω2+1)(jω/ω4+1)(jω/ω6+1)…
Rochester of Technology
GOALS
Phase (Degrees)
Vo/Vs (dB)
ω
Log10 scale
Rochester Institute of Technology
Log10 scale
Microelectronic Engineering ω
© March 1, 2011 Dr. Lynn Fuller, Professor Page 7
Frequency Response
Av = Vo/Vin = 1
jω/ω1 + 1
CONTINUE EXAMPLE 1
0dB
-3dB
Vo/Vs (dB)
-20dB
ω
ω1
Log10 scale
Phase (Degrees)
ω
-45
Rochester Institute of Technology
-90
Microelectronic Engineering
EXAMPLE 2
Poles and Zeros: the complex frequency at which the gain function
goes to infinity in the case of poles or to zero in the case of zeros.
ω
jω
Example 1: 1
Vo/Vin
sCR + 1 σ
Pole at s1 = - 1/RC
ω
jω s-plane
Example 2: sCR
Vo/Vin
sCR + 1
σ
Which has a Zero at zero and a Pole at s1 = - 1/RC s2
Rochester Institute of Technology
Microelectronic Engineering
CORNER FREQUENCY
Example 1: 1
Vo/Vin =
jωCR + 1
Has a corner at ω1 = 1/RC or f = 1/2πRC
Example 2: jωCR
Vo/Vin =
jωCR + 1
Has a corner ω1 = 1/RC
EXAMPLE 3
Find the gain function, poles, zeros and corner frequencies for the
network shown, sketch the Bode plot.
C
+ R1 +
Vin R2 Vout
- -
= -β Rc
vo/vs = sCeRe + 1
(sCeRe + 1) rπ + (β+1) Re
= -β Rc sCeRe + 1 -β Rc sCeRe + 1
=
sCeRe rπ + rπ + (β+1) Re rπ + (β+1) Re sCeRe rπ
rπ + (β+1) Re + 1
-β Rc (jω/ωe + 1)
vo/vs =
rπ + (β+1) Re (jω/ωe1+ 1)
Where: ωe = 1/Ce Re
k=Avlow ωe1 = 1/(Ce Re//(rπ/(β+1)))
Note: ωe1 is always > ωe
Note: Avmid = Avlow ωe1/ωe
Rochester Institute of Technology
Microelectronic Engineering
Vo/Vs (dB)
Avmid
Avlow
ω
ωe1 ωe1
Log10 scale
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Microelectronic Engineering
Rs = 2K β = 100 Vcc
R1 = 40K Vcc = 20
R2 = 10K Cc = Ce = Cc2 = 10µf Rc
RC = 4K R1 Cc2
Rs
Re = 1K +
RL = 2K RL vo
+
Cc
vs -
R2 Re -
Ce
Find k, ω1, ω2, ω3, ω4
EXAMPLE: SOLUTION
Rbb’ Cb’c
b b’ c
Cb’e
rπ CD β ib ro
ib
e
Rbb’ is the series base resistance
rπ is the base emitter small signal junction resistance
Cb’e is the base emitter junction capacitance
Cb’c is the base collector junction capacitance
CD is the diffusion capacitance, represents the change in charge
stored in the base caused by a change in base emitter
voltage
ro is the small signal output resistance = VA/IC
β is the Rochester
shortInstitute
circuit common emitter current gain
of Technology
Microelectronic Engineering
MILLERS THEOREM
MILLERS THEOREM
Z Z1 = Z/(1-K) Z2 = Z (K/(K-1))
V1 V2 V1 V2
N1 N2 N1 N2
Z1 Z2
Ref Ref
where K=V2/V1
e
1/sCb’c
From: Z1 = Z/(1-K) we have 1/sCm =
1-V2/V1
V2 = -β ib ro and V1 = ib rπ
Therefore: Cm = Cb’c (1- - β ro/rπ)
β = 100
rπ = 1K, Rb’b = 0 RS Rbb’
Cb’c = 20pf
Cb’e + CD = 20pf + 1000pf CT
iin
vs + ib β ib
- RB rπ
Vcc RL
Rb Rc Let CT = Cb’e + CD + Cm
and Cm = Cb’c(1- - β RL/rπ)
Iin To find the gain function:
vs + RL
- vo = - β ib RL
ib = Vb’e/rπ Next
Vb’e = vs (RB//rπ//(1/sCT) pg
RS + (RB//rπ//(1/sCT)
Rochester Institute of Technology
Microelectronic Engineering
- β RL R 1
vo/vs = rπ
(RS + R) jω CT R RS +1
(RS + R)
Avmid
ωh = 1/ CT (R//RS)
Vo/Vs (dB)
20Log10 (Avmid)
ω
ωh
Rochester Institute of Technology
Log10 scale
Microelectronic Engineering
RB Rc Rbb’
RB CT iout
iin
Iin Io vs + ib β ib
vs + - rπ
-
2N3904
Rb = 10 ohms
Rochester Institute of Technology
Microelectronic Engineering
iout = β ib
1/sCT
ib = iin iout/iin (dB)
rπ + 1/sCT
β 20Log10 (β)
iout/iin =
sCT rπ + 1
β
iout/iin = 0 dB
jωCT rπ + 1
ω
ωh ωΤ
β
iout/iin =
jω/ωb + 1 ωb = 1/(CT rπ)
ωΤ = 2π fT = transition freq in radians/s
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Microelectronic Engineering
β
at ωT, iout/in = 1 = ~
jω/ωb
β
2 π fT =
CT rπ
β
So CT = = Cb’e + CD + Cm
2 π fT rπ
and Cm = Cb’c since Av = zero
β
Finally Cb’e + CD = - Cb’c
2 π fT rπ
Rochester Institute of Technology
Microelectronic Engineering
Given:
1. Common-Base Open Circuit Output Capacitace of 12 pf is
measured at f = 1 Mhz, VCB = 10V and IE = zero.
2. A transition frequency of 100 Mhz is measured using the following
test conditions, VCE = 2V, IC = 50mA, β response with frequency is
extrapolated at -20 dB/Dec to fT at which β = 1 from f = 20Mhz where
β =100
12V
Find Cb’c,. Cb’e + CD
Rc=1K
188K
+
vo
ANOTHER EXAMPLE
REFERENCES