02 - Semiconductor Devices

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Digital Circuits I
Semiconductor Devices
Semiconductor Fundamentals
Three types of materials: Conductors solids with high conductivity and low resistivity Insulators solids with small or low conductivity and high resistivity Semiconductors solids with conductivity and resistivity between conductors and insulators
University of the Philippines Electrical and Electronics Engineering Institute
Joy Reyes-Madamba@2010
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Energy Band Model

conduction band conduction band conduction band EC EC EC EG EV valence band EG CONDUCTOR EG EV valence band
SEMICONDUCTOR
EV valence band most commonly used: Silicon (Si), Germanium (Ge)
INSULATOR
EC = conduction energy EV = valence energy EG = energy gap
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Types of Semiconductors
Intrinsic semiconductors semiconductors in pure state, without chemical impurities Extrinsic semiconductors impurities (atoms of other elements) are introduced into an intrinsic semiconductor
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Intrinsic Semiconductors
Few charge carriers Not good for electronic devices At 0K, they act like insulators Conductivity increases with temperature
Semiconductor Structure
Semiconductor atoms form a crystalline structure similar to that of diamond At 0K, no free electrons (like an insulator)
Si Si Si University of the Philippines Electrical and Electronics Engineering Institute
- Si - Si - Si -
- Si - Si - Si
Electrons are shared between atoms using covalent bonds
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As temperature rises, thermal energy enables some electrons to free themselves At room temperature, a small amount of electrons Si - - Si - - Si are free
EC EG EV Free electron Si because of thermal - energy - Si - Si - - Si Free
Si electron Si
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A free electron creates a vacancy, called a hole, in the bond Behaves as a positive charge carrier
Si Si hole
Si -
- Si - Si - Si -
- Si - Si - Si
hole
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When an electron transfers to a hole, effect is the hole has moved
Si Si Si University of the Philippines Electrical and Electronics Engineering Institute
- Si - Si - Si -
- Si Si - Si
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Extrinsic Semiconductors
Intrinsic semiconductors to which impurities have been added to increase conductivity Process of adding impurities is called doping Effect of doping is addition of an energy level closer to the conduction or valence band
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Types of impurities
N-type or donor impurities atoms with five valence electrons (e.g. arsenic[As], antimony[Sb], phosphorus[P]); give rise to an n-type semiconductor P-type or acceptor impurities trivalent atoms (e.g. gallium[Ga], boron[B], indium[In]); results in a p-type semiconductor
Fifth electron has a weaker bond than other electrons
Si Si Si -
- Si - P - Si
- Si - Si - Si
Free electron
EC EG EV -
- from impurity Edonor - -
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Si Acceptor impurity has only three Si electrons to share; hole is created Si -
- Si B - Si -
- Si - Si - Si
EC EG EV Eacceptor
+ Free hole from impurity
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To increase the conductivity of the intrinsic semiconductor, a small amount of impurity is needed Doping produces semiconductors with a predominance of one type of carrier
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In n-type semiconductors, electrons are majority carriers & holes are minority carriers In p-type semiconductors, vice versa Doping reduces minority carriers through faster recombination
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Junction Diode
A two-terminal device resulting from the combining a p-type and n-type semiconductor P-N junction diode is the building block of all semiconductor devices
P N
PN junction
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Diode Circuit Symbol

I + V
Typical V-I Curve

I
V Breakdown region
junction diode lets the current flow in one direction only ideally, acts like a switch
Physical Operation of Junction Diodes

There is a greater concentration of holes in the P-region than in the N-region, while a greater concentration of electrons is in the N-region than in the P-region
+ + + P N
This results in diffusion of carriers.

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A depletion or space-charge region is formed, where there are no mobile charges, only immobile ions.
P + + + N
These immobile ions produce an electric field which results in a potential barrier and a drift current.
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The potential barrier prevents the flow of carriers across the junction. An external voltage source or bias, V, is connected to the diode to increase or decrease the potential barrier.
P-region N-region
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Forward biasing positive values of V
o Decreases the potential barrier o A net forward current is seen at the diode o As V is increased, the current increases
P-region
N-region
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Reverse biasing negative values of V
o Increases the potential barrier o A small reverse or saturation current, IS, is seen at the diode o An increase in V does not increase the current significantly, until breakdown occurs.
Peak inverse voltage or breakdown voltage (PIV) around 75V for general- purpose diodes
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Cut-in or threshold voltage forward bias voltage needed for current to flow, typically 0.6V for silicon diodes. Forward voltage in normal operation, VF, typically 0.4 0.8V
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Special types of diodes:
o Zener diodes typically used in the breakdown region o Light-emitting diodes (LED) uses materials other than germanium and silicon; color depends on energy gap of material
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Diode Circuits
Half-wave rectifier
VS
Vin
Vout
RL
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Diode Circuits
Full-wave bridge
VS Vin RL Vout
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Diode Circuits
Clipper circuit has other variations (see book by Boylestad)
Vin
Vout
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Junction Transistor
Also called bipolar transistor Three-element device formed from two junctions Can function as a controlled source or switch Two types: pnp and npn transistors Arrow of symbols indicate direction of positive charge flow (or actual current)
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Junction Transistor
Three elements/terminals:
emitter source of mobile carriers collector collects carriers base controls flow of carriers from emitter to collector
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PNP transistor basic structure:

P E B N P C E
NPN transistor
N P B N C
symbol:
C B E C B E
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Junction Transistor
Convention for polarity of currents: for all terminals, currents entering the transistor are positive
IC IB IB IC IE
IE
IE = I C + I B
Transistor Operation
Active region
Mode of operation in which transistor acts like a controlled source Emitter-base junction is forward-biased and collector-base junction is reverse-biased
Cutoff region
Emitter-base junction and collector-base junction are reverse-biased
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Saturation region
Emitter-base junction and collector-base junction are forward-biased
Reverse-active region
Emitter-base junction is reverse-biased and collector-base junction is forward-biased
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Transistor acts as a switch when in saturation and cutoff region
When in cutoff, transistor is OFF When in saturation, transistor is ON
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VEB/VBE
Forward active Saturation
VCB/VBC
Cutoff Inverted active
PNP Output characteristics
PNP/NPN regions of operation
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Amplifier Types
According to common terminals
common base common emitter common collector
IC IB _ VEB + P N P+ + VCB + VEC _ _ IB P+ N P _ IE P+ + VEB _ N P + VCB _ IC
IE
VEC
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Biasing a Transistor
Quiescent point point in loadline that corresponds to quiescent conditions of transistor; is usually found in active region of transistor Biasing configuring the circuit to establish the quiescent point
Some Transistor Circuits

Fixed bias circuit
VCC RB RC
VBE + IBRB = VCC IB = VCC VBE RB VBE is fixed for Si: 0.7V VCE + ICRC = VCC IC = IB For active region, VCE > 0.2V
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Emitter-stabilized Bias Circuit
VCC RB RC
IB = VCC VBE RB VCE + ICRC + IERE = VCC IE = (+1) IB
RE
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Voltage-Divider Bias
VCC R1 RC
VCC = VCC R2 R1 + R2 RB = R1 || R2 IB = VCC VBE RB VCE + ICRC + IERE = VCC

R2 RE
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Junction Field Effect Transistor (JFET)

A voltage-operated , unipolar transistor that functions using only majority carriers Drain two types
N-channel JFET P-channel JFET
Gate
Gate Source Drain
Source
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Basic JFET Structure
Cross section of basic JFET structure

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Biasing
Biasing conditions
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Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

Insulated gate FET Uses a metal gate instead of a PN junction Oxide electrically isolates metal gate from semiconductor channel Two types
N-type MOSFET (NMOS) P-type MOSFET (PMOS)
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Modes of Operation
Depletion mode conducts when zero bias is applied to the gate Enhancement mode conducts when positive bias is applied to the gate
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MOSFET Symbols
Enhancement Type MOSFETs
Drain Gate Substrate Source D G S D D SS
G S NMOS
G S PMOS
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MOSFET Symbols
Depletion Type MOSFETs
D SS S D SS S G G
G S
G S
NMOS
PMOS
Basic MOSFET Structure
Cross section of basic MOSFET structure

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Phases of MOSFET Operation (VG > VT)
VD = 0
pinch-off
moderate VD
post pinch-off
Digital Device Families

Different logic families are grouped according to the major circuit element These families are used to implement different integrated circuits (ICs) ICs can be grouped by standard levels of complexity (or no. of gates)
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Standard Levels of IC Complexity

Complexity Small-scale integration (SSI) Medium-scale integration (MSI) Large-scale integration (LSI) Very-large-scale integration (VLSI) Ultra-large-scale integration (ULSI) No. of Gates Functions Fewer than 12 Gates, flip-flops 12 to 99 100 to 9999 10,000 to 99,999 100,000 or more Registers, counters, decoders, etc. RAMs and ROMs < 10KBits Microprocessors
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BJT Logic Families

Resistor Transistor Logic (RTL) Direct Coupled Transistor Logic (DCTL) Integrated Injection Logic (IIL) Diode Transistor Logic (DTL) High Threshold Logic (HTL) Transistor Transistor Logic (TTL) High Speed TTL Emitter Coupled Logic (ECL) University of the Philippines
Electrical and Electronics Engineering Institute
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MOSFET Logic Families

Gates are implemented using only NMOS and PMOS transistors MOSFET logic that uses both NMOS and PMOS transistors in making gates is called complementary MOSFET logic (CMOS)
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02 - Semiconductor Devices

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02 - Semiconductor Devices

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11/28/2010

University of the Philippines Electrical and Electronics Engineering Institute

Energy Band Model

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

Electrons are shared between atoms using covalent bonds

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

Fifth electron has a weaker bond than other electrons

- from impurity Edonor - -

University of the Philippines Electrical and Electronics Engineering Institute

Si Acceptor impurity has only three Si electrons to share; hole is created Si -

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

Diode Circuit Symbol

Typical V-I Curve

Physical Operation of Junction Diodes

This results in diffusion of carriers.

Physical Operation of Junction Diodes

University of the Philippines Electrical and Electronics Engineering Institute

Physical Operation of Junction Diodes

University of the Philippines Electrical and Electronics Engineering Institute

Physical Operation of Junction Diodes

+ University of the Philippines Electrical and Electronics Engineering Institute

Physical Operation of Junction Diodes

Physical Operation of Junction Diodes

University of the Philippines Electrical and Electronics Engineering Institute

Physical Operation of Junction Diodes

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

PNP transistor basic structure:

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

PNP Output characteristics

PNP/NPN regions of operation

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

Some Transistor Circuits

University of the Philippines Electrical and Electronics Engineering Institute

Some Transistor Circuits

IB = VCC VBE RB VCE + ICRC + IERE = VCC IE = (+1) IB

Some Transistor Circuits

VCC = VCC R2 R1 + R2 RB = R1 || R2 IB = VCC VBE RB VCE + ICRC + IERE = VCC

University of the Philippines Electrical and Electronics Engineering Institute

Junction Field Effect Transistor (JFET)

Gate Source Drain

Basic JFET Structure

Cross section of basic JFET structure

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

University of the Philippines Electrical and Electronics Engineering Institute

University of the Philippines Electrical and Electronics Engineering Institute

Basic MOSFET Structure

Cross section of basic MOSFET structure

Phases of MOSFET Operation (VG > VT)

Digital Device Families