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Features
Pin Description
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
SO-8
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
G1 G2 D1 D1 S2
Applications
S1 D2 D2
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
N-Channel MOSFET
P-Channel MOSFET
APM4500 K :
APM4500 XXXXX
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - May., 2003 1 www.anpec.com.tw
APM4500
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM PD TJ TSTG RjA Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous Maximum Drain Current Pulsed Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance Junction to Ambient TA=25C TA=100C
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Parameter
Test Condition
VGS=0V , IDS=250A VDS=16V , VGS=0V VDS=-16V , VGS=0V VDS=VGS , IDS=250A VDS=VGS , IDS=-250A VGS=12V , VDS=0V VGS=12V , VDS=0V VGS=4.5V , IDS=8A VGS=2.5V , IDS=5.2A VGS=-4.5V , IDS=-4.3A VGS=-2.5V , IDS=-2A ISD=1.7A , VGS=0V ISD=-1.25A , VGS=0V
P-Ch N-Ch P-Ch N-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
V A V
P-Ch -0.45
RDS(ON)a
VSDa
Notes
a
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APM4500
Electrical Characteristics (Cont.)
Symbol Dynamicb Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance VGS=0V Output Capacitance Reverse Transfer Capacitance VDS=15V Frequency=1.0MHz N-Channel VDS=10V , IDS= 8A VGS=4.5V P-Channel VDS=-10V , IDS=-3A VGS=-4.5V N-Channel VDD=10V , IDS=1A , VGEN =4.5V , RG=0.2 P-Channel VDD=-10V , IDS=-1A , VGEN =-4.5V , RG=6 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 9 3 3 2.5 1 16 13 40 36 42 45 20 37 675 510 178 270 105 120 pF 32 21.5 75 56 78 69.5 35 57.5 ns 13 12 nC Parameter
Test Condition
Notes
b
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APM4500
Typical Characteristics
N-Channel MOSFET Output Characteristics
20
VGS=3,4,5,6,7,8,9,10V VGS=2.5V
Transfer Characteristics
20
16
16
12
12
VGS=2V
4
VGS=1.5V
0 0.0
0.5
1.0
1.5
2.0
2.5
RDS(ON)-On-Resistance ()
0.05 0.04
VGS=2.5V
0.03
VGS=4.5V
-25
25
50
75
10
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APM4500
Typical Characteristics (Cont.)
RDS(ON)-On-Resistance ()
RDS(ON)-On-Resistance () (Normalized)
-25
25
50
75
Gate Charge
10
VDS=10V ID=1A
Capacitance
1000
Frequency=1MHz
800
Capacitance (pF)
Ciss
600
400
Coss Crss
200
12
16
20
12
16
20
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APM4500
Typical Characteristics (Cont.)
48
Power (W)
1.2 1.4
36
TJ=150C
TJ=25C
24
12
0.1 0.0
0.2
0.4
0.6
0.8
1.0
0 0.01
0.1
10
100
Time (sec)
D= 0.2 D= 0.1
0.1
D= 0.05
D= 0.02
SINGLE PULSE
1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=62.5C/W 3.T JM -T A =P DM Z thJA 4.Surface Mounted
0.01 1E-4
1E-3
0.01
0.1
10
100
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APM4500
Typical Characteristics
P-Channel MOSFET Output Characteristics
10
-VGS=3,4.5,6,7,8V
Transfer Characteristics
10
-VGS=2V
4
-VGS=1.5V
4
TJ=25C TJ=-55C
2
-VGS=1V
TJ=125C
10
0 0.0
0.5
1.0
1.5
2.0
2.5
RDS(ON)-On-Resistance ()
-25
25
50
75
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APM4500
Typical Characteristics (Cont.)
RDS(ON)-On-Resistance ()
RDS(ON)-On-Resistance () (Normalized)
0.18
0.2 -50
-25
25
50
75
Gate Charge
5
Capacitance
800 700
Frequency=1MHz
-VDS=10V -ID=3A
Capacitance (pF)
600
Ciss
1
Crss
10
100
10
15
20
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APM4500
Typical Characteristics (Cont.)
10
Power (W)
1.4 1.6
8 6 4 2
TJ=150C
TJ=25C
1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.01
0.1
10
100
Time (sec)
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=R thJA=62.5C/W 3.T JM-T A=P DMZ thJA SINGLE PULSE
D=0.01
0.01 1E-4
1E-3
0.01
0.1
10
100
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APM4500
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
e1 D
e2
A1
1 L
0.004max.
Dim A A1 D E H L e1 e2 1
Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8
10
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APM4500
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
Peak temperature
Time
11
APM4500
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Bo
Ao
D1 T2
Ko
J C A B
T1
Application
A 330 1
B 62 +1.5 D
C 12.75+ 0.15 D1
J 2 0.5 Po
W 12 0. 3 Bo 5.2 0. 1
P 8 0.1 Ko
E 1.750.1 t
SOP- 8
F 5.5 1
12
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APM4500
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
13
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This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.