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October 2005
BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V RDS(ON) = 6.0 @ VGS = 4.5 V High density cell design for extremely low RDS(ON) Rugged and Reliable Compact industry standard SOT-23 surface mount package
S
G S
SOT-23
G
TA=25oC unless otherwise noted
Parameter
Ratings
50 20
(Note 1)
Units
V V A W mW/C C C
(Note 1)
Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16 from Case for 10 Seconds
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1)
350
C/W
BSS138
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
Test Conditions
ID = 250 A VGS = 0 V, ID = 250 A,Referenced to 25C VDS = 50 V, VDS = 30 V, VGS = 0 V VGS = 0 V VDS = 0 V
Units
V mV/C A A nA nA
Off Characteristics
VGS = 20 V,
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
VDS = VGS,
ID = 1 mA
0.8
ID = 1 mA,Referenced to 25C ID = 0.22 A VGS = 10 V, ID = 0.22 A VGS = 4.5 V, VGS = 10 V, ID = 0.22 A, TJ = 125C VGS = 10 V, VDS = 5 V VDS = 10V, ID = 0.22 A
1.5
V mV/C
ID(on) gFS
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
V GS = 0 V,
27 13 6 9
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 30 V, VGS = 10 V,
ID = 0.29 A, RGEN = 6
2.5 9 20 7
5 18 36 14 2.4
ns ns ns ns nC nC nC
VDS = 25 V, VGS = 10 V
ID = 0.22 A,
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
BSS138
Typical Characteristics
VGS = 10V
0.8 ID, DRAIN CURRENT (A)
6.0V
3.4
4.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.5V 3.0V
VGS = 2.5V
2.6 2.2
0.6
3.0V
1.8 1.4 1 0.6
2.5V
0.4
0.2
2.0V
0.2
0.4
0.6
0.8
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
125
150
10
25 C 125oC
VDS = 10V
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
BSS138
Typical Characteristics
100
VDS = 8V 30V
25V
80
f = 1 MHz VGS = 0 V
60
CISS
40
COSS
20
CRSS 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Qg, GATE CHARGE (nC)
0 0 10 20 30 40 50
0.1
0.01
0 0.001
0.01
0.1
10
100
1000
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 350 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
o
0.1
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
10
100
1000
TRADEMARKS
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I17