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30 4

2010 2 5

0258-8013 (2010) 04-0001-07


Proceedings of the CSEE
TM 73

Vol.30 No.4 Feb.5, 2010


2010 Chin.Soc.for Elec.Eng.

47040

( 100192)

Application of Advanced Power Electronics in Smart Grid


ZHANG Wen-liang, TANG Guang-fu, ZHA Kun-peng, HE Zhi-yuan
(China Electric Power Research Institute, Haidian District, Beijing 100192, China)
ABSTRACT: The major driving forces to construct smart grid
are to increase the reliability, efficiency and safety of the power
gird. Advancement in power electronics technology provides
an important approach for such purpose. The demand of smart
grid for advanced power electronics is analyzed from different
perspectives, followed by the outlook for the research and
development trend of the power electronics technology in
China. Then the principle of power electronics technology and
its applications in smart grid is presented, with emphasis on the
flexible AC transmission system (FACTS) and high voltage DC
(HVDC) transmission system technologies. The paper points
out the research priorities in the future.
KEY WORDS: smart grid; power electronics; flexible AC
transmission system (FACTS); high voltage DC (HVDC);

[1-3]
(flexible AC transmission
systemFACTS)(high voltage
DCHVDC)(custom power)

power quality; energy transformation

1.1


HVDCFACTS

[4-5]

(flexible AC transmission
systemFACTS)(high voltage DCHVDC)

2020 100~
150 GW 20 GW

1.3

[6]

1.2

Tab. 1

30

1.4

HVDC
[7]

1.5

2008

[8]

2
20
1

1
Development routine chart for advanced power electronics

2010
2020

FACTS

FACTS

FACTS

2030

HVDC FACTS

100 Mvar SVC


SVC
3 SVCSVC
SVC

SVC
2009
20 SVC
180 Mvar
SVC 25.976 GWh
1149 [11]

3 FACTS

FACTS
FACTS

[9]
FACTS
(static var
compen-satorSVC)(thyristor controlled
series compensatorTCSC)
(static synchronous
compensator STATCOM)(unified
power flow controllerUPFC)

FACTS

3.2 SVC
SVC

[10]
20 80
6 SVC2004

3.1

3.3

TCSC

(metal oxide varistorMOV)

[12] 20 90
2004
TCSC 220 kV
4
2007 10 500 kV

2008
25 33
10.870 Gvar
40 3 200 km
3.4

FACTS

/
FACTS
FACTS
2006 50 Mvar STATCOM
500 kV
(stepped control shunt reactorSCSR)
500 kV(magnetically control shunt

30

reactorMCSR) 2006 9
2007 9 [13]

3.5 FACTS

FACTS 5
FACTS 1
750 kV/1 000 kV2750
kV/1 000 kV3
(static synchronous series
compensatorSSSC)4UPFC
5 (wide area
measurement systemWAMS)FACTS

AV1

ACB2
ADR

Y/Y2
A

ADR

AV2

ACB
AV2
Y/2
AV2

ACB12

AV3

Y/Y1
ACB11

AV2
AV2 AM1

Y/1
A

AV2

4
AE11

HVDC

2009 7
2
7 085 km 20 GW
2020

50
30 5 1 000 kV
[13-16]

2007 800 kV/6 400 MW

6
II 6
4.5 kA/
2009
660 kV

1 000 kV/5 kA
800 kV
12
1 500 660 kV 12
125
5006608001 000 kV
4.1

Fig. 1

AE12

AE2

1
UHVDC project basic topology of coverter station

33.544.55 kA[14-17]

()

[18]
4.2
20 90
(voltage source converterVSC)
(insulategate bipolar transistorIGBT)

[19]

100
10 GW10 GW

ABB 9

2006 5

2008 8

20 MVA30 kV
2010
2
2 VSC-HVDC
[20]

Zs1

Zs2

Fig. 2

2
Electric main circuit of VSC-HVDC demo project
2
Tab. 2 Main technical parameters of the
VSC-HVDC converter

/kV

/Hz

35

50

35

50

/kV

/A

30

20 MVA/18 MW

300

30

20 MVA/18 MW

300

VSC

VSC

100 MW100 kV

200 MW150 kV
10
2011
500 MW250 kV

4.3

11 000 kV
23
45
6
7

(active power filterAPF)


(dynamic voltage restorerDVR)
[21]

(
)

(unified power quality


controllerUPQC)

[22]

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