ST 2SC945

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be manufactured in different pin configurations.

TO-92 Plastic Package Weight approx. 0.19g

Absolute Maximum Ratings (Ta = 25) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 150 250 150 -55 to +150 Unit V V V mA mW
O O

C C

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 22/07/2004

ST 2SC945
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y P L Collector Base Breakdown Voltage at IC=100A Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10A Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500 NF 4 dB COB 2.5 pF fT 300 MHz VCE(sat) 0.15 0.3 V IEBO 0.1 A ICBO 0.1 A V(BR)EBO 5 V V(BR)CEO 50 V V(BR)CBO 60 V hFE hFE hFE hFE hFE 40 70 120 200 350 80 140 240 400 700 Min. Typ. Max. Unit

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 22/07/2004

ST 2SC945
Total power dissipation vs. ambient temperature 300
Free air

Normalized collector cutoff current vs. ambient temperature 10000

I CBO(Ta) Normalized collector cutoff current I CBO(Ta=25 C)

250 200 150 100 50

1000

P tot (mW)

100

10

25

50

75

100

125

150

20

40

60

80

100 120 140

160

Tamb ( C)
Tamb ( C)

Collector current vs. collector emitter voltage

Collector current vs. collector emitter voltage

100 80 60
Ic - mA

1.0 0.9 0.8 0.7 0.6 0.5 0.4

10 8 6
Ic - mA

4.5 4 3.5 3 2.5 2 1.5 1

0.3

40
0.2

4 2

20
I B =0.1mA

0 0

0.4

0.8

1.2

1.6

2.0

0 0

IB=0.5 A

10

20

30

40

50

VCE, V

VCE, V

h FE - I C
360 360

h FE - I C pulse d
VCE=6V pulsed

320 280
DC CURRENT GAIN DC CURRENT GAIN

320 280 Ta=75 C 240 200 25 C 160 120 80 40 0 -25 C

240 VCE=6.0V 200 160 120 80 40 0 0.01 0.1 1 10 100 COLLECTOR CURRENT, mA 3.0V 2.0V 1.0V 0.5V

0.01

0.1

10

100

COLLECTOR CURRENT, mA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 22/07/2004

ST 2SC945
Collector current vs. base emitter voltage 100
VCE=6V pulsed

Normalized h-parameters vs. collector current 10

Hie VCE=6V f=1kHz He= he(Ic) he(Ic=1mA)

Normalized h-parameters

10
C

Hre

Ic - mA

25 C

-25 C

75

Ta=

Hoe

1
Hfe Hoe

Hfe

0.1

Hre Hie

0.01 0.2

0.3

0.4

0.5

0.6
VBE , V

0.7

0.8

0.9

0.1 0.1

1 Ic ,

10
mA

Collector and base saturation

voltage vs. collector current 10 pulsed 10000

fT - I E

VBE(sat) , V VCE(sat) , V

VBE(sat)

IC/IB=10

1000
fT - MHz
VCE=10V

20 50 50 0.1
VCE(sat)

20
IC/IB=10

100

6V 2V 1V

0.01 0.1 1 10 Collector Current, mA

100

10 -0.1 -1 -10 Emitter Current, mA

-100

VEB, VCB vs. Cib, Cob

100
f=1MHz

Small signal current gain vs. DC current gain

1000
Small signal current gain
VCE=6V Ic=1mA f=1kHz

Cib(Ic=0)
Cib, Cob - pF

800 600 400 200

10 Cob(IE=0) 1

0.1 0.1

10

100

200

400

600

800

1000

VEB, VCB - V

DC current gain

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 22/07/2004

ST 2SC945

100 hoe - Output admittance ( s) 80 60 40 20

hre - Voltage feedback ratio (x10 -4 )

50 hie - Input impedance(k ) 40 30 20 10

Input impedance, voltage feedback ratio and output admittance vs. small signal current gain 50 40 30 20 10
hoe hre hie

Normalized h-parameters vs. collector emitter voltage 3 Normalized h- parameters

Ic=1mA f=1kHz he(VCE) He= he(VCE=6V)

VCE=6V Ic=1mA f=1kHz

2
hoe hre

hfe

hie

1
hfe hie

hre hoe

200

400

600

800

1000

10 VCE - V

20

30

hfe - Small signal current gain

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 22/07/2004