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3, MARCH 2006
I. INTRODUCTION
Fig. 3. (a) Micrograph of the 1P4T RF switch and (b) photograph of PCB and
bonded switch chip.
increases the return loss and the loss through associated para-
sitic substrate resistances. Because of these, there are optimal
transistor widths for minimum insertion loss. The parasitic ca-
pacitances also degrade insertion loss of a transistor with fre-
quency as well as isolation [6], [7].
Since the transistors are intended for operation at dif-
ferent frequencies, their sizes must be accordingly chosen
(1 296 m, 2 378 m, 3 378 m, 4 422 m). Fig. 4. (a) Measured return loss and (b) insertion loss of 1P4T RF switch.
This is another unique requirement not to be considered for
the design of previously reported switches. In order to get
O [8] showed that RF switches with low substrate resistances
comparable insertion losses among four transistors, only M4
have better insertion loss and isolation. Therefore, all of the die
for WCDMA was chosen to have the optimum width while the
area except the four transistors, four resistors, and twelve pads,
other transistors were made narrower than the optimum. M1 for
are occupied by substrate contacts. The die size including the
GSM900 has the smallest width and M4 for WCDMA has the
bond pads is 0.3 mm . Fig. 3(b) shows a photograph of the
largest width. The minimum channel length of 180 nm is ex-
switch mounted on a printed circuit board (PCB).
clusively used to reduce the channel resistance. The multifinger
Fig. 4 shows the measured return loss and insertion loss
interdigitated transistor layout is used to reduce the junction
versus frequency at the four bands. The return losses for
capacitances. The parasitic interconnect capacitance between a
GSM 900, DCS 1800, PCS 1900, and WCDMA are 23 dB,
drain and a source is an important factor determining isolation
14 dB, 16 dB, and 18.5 dB, respectively, which are excellent.
and its effects become more critical as the transistor length
For GSM 900, the insertion loss varied between 0.37 dB
decreases. Hence, only the metal1 and metal2 are used for the
(935 MHz) and 0.39 dB (960 MHz). For DCS 1800 and
drain and source connections.
PCS 1900, the maximum insertion losses are 0.61 dB at
1880 MHz and 0.66 dB at 1990MHz, respectively. Last, for
III. EXPERIMENT RESULTS WCDMA, the maximum insertion loss is 0.75 dB at 2170 MHz.
A microphotograph of the 1P4T RF switch is shown in These should be adequate for cellular applications. Actually,
Fig. 3(a). To reduce the lengths for the interconnections be- the simulated insertion losses were all less than 0.5 dB. The
tween M3 and bond pad and between M4 and bond pad, the differences between simulation and measurement are attributed
transistors are located between the pads. R1-R4 resistors are to the fact that the actual bond-wire inductances ( 3 nH) on
chosen to be (\sim) 70 k to float the gate terminals. Li and the RF pats are 50% higher than that used for the design
130 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 16, NO. 3, MARCH 2006
IV. CONCLUSION
An one-pole-four-throw switch for a multiband receiver is
implemented using 1.8-V 0.18- m NMOS transistors. Its inser-
tion losses are 0.39, 0.61, 0.66, and 0.75 dB for the GSM900,
DCS1800, PCS1900, WCDMA bands, and its IIP3s of 27 dBm
should be sufficient for this application. The insertion losses
are lowered by eliminating the shunt transistors normally found
Fig. 5. Simulated insertion losses for varying bond wire inductances. in one-pole-two-throw switches. Different width transistors are
used in the four bands to balance the insertion loss.
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