2000 Fairchild Semiconductor lnternational

Rev. F, May 2000

MODULATION + DAMPER DIODE
AbsoIute Maximum Ratings (ModuIation) T

=25 C unIess otherwise noted

AbsoIute Maximum Ratings (Damper) T

=25 C unIess otherwise noted

ThermaI Characteristics
SymboI Parameter VaIue Units
V
RRM
Peak Repetitive Reverse Voltage 600 V
l
F(AV)
Average Rectified Forward Current @ T
C
= 100C 20 A
l
FSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
120 A
T
J,
T
STG
Operating Junction and Storage Temperature - 65 to +150 C
SymboI Parameter VaIue Units
V
RRM
Peak Repetitive Reverse Voltage 1500 V
l
F(AV)
Average Rectified Forward Current @ T
C
= 100C 6 A
l
FSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
60 A
T
J,
T
STG
Operating Junction and Storage Temperature - 65 to +150 C
SymboI Parameter VaIue Units
R
JC
Maximum Thermal Resistance, Junction to Case 3.3 C/W

Features
High voltage and high reliability
High speed switching
Modulation diode / Damper diode
Low conduction loss
Modulation diode / Damper diode
AppIications
(Modulation + Damper) diode designed for
horizontal deflection circuts in C-TV &
monitor
TO-3PF

Modulation Damper
2000 Fairchild Semiconductor lnternational
Rev. F, May 2000

EIectricaI Characteristics*(ModuIation) T

=25 C unIess otherwise noted

* Pulse Test: Pulse Width=300s, Duty Cycle=2%
EIectricaI Characteristics*(Damper) T

=25 C unIess otherwise noted

* Pulse Test: Pulse Width=300s, Duty Cycle=2%
SymboI Parameter Min. Typ. Max. Units
V
FM
Maximum lnstantaneous Forward Voltage

l
F
= 20A
l
F
= 20A
T
C
= 25 C
T
C
= 100 C
2.2
2.0
V
l
RM
Maximum lnstantaneous Reverse Current
@ rated V
R
T
C
= 25 C
T
C
= 100 C
10
100
A
t
rr
l
rr
Q
rr
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(l
F
=20A, di/dt = 200A/s)
90
8
360
ns
A
nC
SymboI Parameter Min Typ Max Units
V
FM
Maximum lnstantaneous Forward Voltage

l
F
= 6A
l
F
= 6A
T
C
= 25 C
T
C
= 100 C
1.6
1.4
V
l
RM
Maximum lnstantaneous Reverse Current
@ rated V
R
T
C
= 25 C
T
C
= 100 C
7
60
A
t
rr
Maximum Reverse Recovery Time
(l
F
=1.0A, di/dt = 50A/s)
170 ns
t
fr
Maximum Forward Recovery Time
(l
F
=6.5A, di/dt = 50A/s)
350 ns
V
FRM
Maximum Forward Recovery Voltage 17 V
2000 Fairchild Semiconductor lnternational Rev. F, May 2000

TypicaI Characteristics
Figure 1. TypicaI Forward Characteristics
(ModuIation Diode)
Figure 3. TypicaI Reverse Current
vs. Reverse VoItage (ModuIation Diode)
Figure 5. TypicaI Junction Capacitance
(ModuIation Diode)
Figure 2. TypicaI Forward Characteristics
(Damper Diode)
Figure 4. TypicaI Reverse Current
vs. Reverse VoItage (Damper Diode)
Figure 6. TypicaI Junction Capacitance
(Damper Diode)
0.1
1
10
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T

= 25

C
T

= 100

C
Forward Voltage , V

[V]
F
o
r
w
a
r
d

C
u
r
r
e
n
t

,

l

[
A
]
100 200 300 400 500 600
0.001
0.01
0.1
1
10
100
1000
T

= 100

C
T

= 25

C
R
e
v
e
r
s
e

C
u
r
r
e
n
t

,

l

[
u
A
]
Reverse Voltage , V

[V]
0.1 1 10 100
1
50
100
150
200
Typical Capacitance
at 0V = 178 pF
C
a
p
a
c
i
t
a
n
c
e

,

C
j

[
p
F
]
Reverse Voltage , V

[V]

Forward Voltage , V

[V]
F
o
r
w
a
r
d

C
u
r
r
e
n
t

,

l

[
A
]
0 300 600 900 1200 1500
0.001
0.01
0.1
1
10
100
T

= 100

C
T

= 125

C
T

= 25

C
R
e
v
e
r
s
e

C
u
r
r
e
n
t

,

A
]
Reverse Voltage , V

[V]
0.1 1 10 100
0
20
40
60
80
100
120
Typical Capacitance
at 0V = 100 pF
C
a
p
a
c
i
t
a
n
c
e

,

C
j

[
p
F
]
Reverse Voltage , V

[V]
2000 Fairchild Semiconductor lnternational Rev. F, May 2000

TypicaI Characteristics
Figure 7. TypicaI Reverse Recovery Time
vs. di/dt (ModuIation Diode)
Figure 9. TypicaI Reverse Recovery Current
vs. di/dt (ModuIation Diode)
Figure 11. Forward Current Derating Curve
(ModuIation Diode)
Figure 8. TypicaI Reverse Recovery Time
vs. di/dt (Damper Diode)
Figure 10. Forward Current Derating Curve
(Damper Diode)
100 500
40
50
60
70
80
90
100
l

= 20A
T

= 25

C
R
e
v
e
r
s
e

R
e
c
o
v
e
r
y

T
i
m
e

,

t

[
n
s
]
di/dt [A/us]
100 500
0
2
4
6
8
10
12
14
16
l

= 20A
T

= 25

C
R
e
v
e
r
s
e

R
e
c
o
v
e
r
y

C
u
r
r
e
n
t

,

[
A
]
di/dt [A/us]
60 80 100 120 140 160
0
5
10
15
20
25
30

A
v
e
r
a
g
e


F
o
r
w
a
r
d


C
u
r
r
e
n
t


,

[
A
]
Case Temperature , T

C]
1 2 3 4 5 6 7 8 9 10
0
100
200
300
400

di/dt = 100A/s
di/dt = 50A/s
R
e
v
e
r
s
e

R
e
c
o
v
e
r
y

T
i
m
e

,

t

[
n
s
]
Forward Current ,

[A]
80 100 120 140 160
0
1
2
3
4
5
6
7
8
9
10

A
v
e
r
a
g
e


F
o
r
w
a
r
d


C
u
r
r
e
n
t


,

[
A
]
Case Temperature , T

C]
2000 Fairchild Semiconductor lnternational
Rev. F, May 2000

Package Dimensions
Dimensions in Millimeters

15.50 0.20 3.60 0.20

2
6
.
5
0

0
.
2
0
4
.
5
0

0
.
2
0
1
0
.
0
0

0
.
2
0
1
6
.
5
0

0
.
2
0
1
0

1
6
.
5
0

0
.
2
0
2
2
.
0
0

0
.
2
0
2
3
.
0
0

0
.
2
0
1
.
5
0

0
.
2
0
1
4
.
5
0

0
.
2
0
2
.
0
0

0
.
2
0
2.00 0.20
2.00 0.20
0.85 0.03
2.00 0.20
5.50 0.20
3.00 0.20
(1.50)
3.30 0.20
2.00 0.20
4.00 0.20
2
.
5
0

0
.
2
0
1
4
.
8
0

0
.
2
0
3
.
3
0

0
.
2
0
2
.
0
0

0
.
2
0
5
.
5
0

0
.
2
0
0.75
+0.20
0.10
0.90
+0.20
0.10
5.45TYP
[5.45 0.30]
5.45TYP
[5.45 0.30]
2000 Fairchild Semiconductor lnternational Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
Bottomless
CoolFET
CROSSVOLT
E
2
CMOS
FACT
FACT Quiet Series
FAST

FASTr
GTO
HiSeC
ISOPLANAR
MICROWIRE
POP
PowerTrench

QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
VCX
DISCLAIMER
FAlRCHlLD SEMlCONDUCTOR RESERVES THE RlGHT TO MAKE CHANGES WlTHOUT FURTHER NOTlCE TO ANY
PRODUCTS HERElN TO lMPROVE RELlABlLlTY, FUNCTlON OR DESlGN. FAlRCHlLD DOES NOT ASSUME ANY
LlABlLlTY ARlSlNG OUT OF THE APPLlCATlON OR USE OF ANY PRODUCT OR ClRCUlT DESCRlBED HERElN;
NElTHER DOES lT CONVEY ANY LlCENSE UNDER lTS PATENT RlGHTS, NOR THE RlGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAlRCHlLD'S PRODUCTS ARE NOT AUTHORlZED FOR USE AS CRlTlCAL COMPONENTS lN LlFE SUPPORT
DEVlCES OR SYSTEMS WlTHOUT THE EXPRESS WRlTTEN APPROVAL OF FAlRCHlLD SEMlCONDUCTOR
lNTERNATlONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance lnformation Formative or ln
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No ldentification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not ln Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.