BUH1215

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

s s

STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED

APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION The BUH1215 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
1

3 2

TO-218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature
o

Value 1500 700 10 16 22 9 12 200 -65 to 150 150

Uni t V V V A A A A W
o o

C C 1/7

January 1999

BUH1215
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 0.63
o

C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol I CES I EBO V CEO(sus) V EBO V CE(sat ) V BE(s at) h F E Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain RESISTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA I E = 10 mA I C = 12 A I C = 12 A I C = 12 A I C = 12 A IB = 2.4 A IB = 2.4 A VCE = 5 V VCE = 5 V 7 5 10 700 10 1.5 1.5 14 Tj = 125 C
o

Min.

Typ .

Max. 0.2 2 100

Un it mA mA A V V V V

Tj = 100 C

ts tf ts tf

V CC = 400 V I B1 = 2 A I C = 12 A I B1 = 2 A

I C = 12 A I B2 = -6 A

1.5 110 4 220

s ns s ns

f = 31250 Hz I B2 = -1.5 A 6 V c eflybac k = 1050 sin 10 t V 5

ts tf

INDUCTIVE LO AD Storage Time Fall Time

f = 64 KHz V BE(off ) = -2 A V c eflybac k = 1200 sin 106 t V 5

IC = 6 A I B1 = 1 A

3.5 180

s ns

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Area

Thermal Impedance

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BUH1215
Derating Curve DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Power Losses at 64 KHz

Switching Time Inductive Load at 64 KHz (see figure 2)

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BUH1215
Reverse Biased SOA

BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided the transistor to turn off (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB1 at 64 KHz scanning frequencies for choosing the optimum negative drive. The test circuit is illustrated in figure 1. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 = 2 f = L C Where IC = operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace.

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BUH1215
Figure 1: Inductive Load Switching Test Circuits.

Figure 2: Switching Waveforms in a Deflection Circuit

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BUH1215

TO-218 (SOT-93) MECHANICAL DATA

mm MIN. A C D E F G H L2 L3 L5 L6 R 4 3.95 31 12.2 4.1 0.157 0.5 1.1 10.8 14.7 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054

DIM.

L5 L3 L2

L6

E H F R 1 2 3

P025A

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BUH1215

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .

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