EE221 HWS7

EE221 HW7 Solutions

15. From Eq. 39,
Q p = q

xn

( p n p no )

dx

= q p no e qV / kT 1 e
xn

( x xn ) / L p

dx

The hole diffusion length is larger than the length of neutral region.

Qp = q

x n'
xn

( pn pno ) dx

= q p no (e qV / kT 1) e
x n'

( x xn ) / L p

xn

dx

x x
xn xn
n n
qV

L
L

p
= qp no ( L p ) e kT 1 e
e p

'

1
0

0.0259
15
(9.65 10 9 ) 2
4
= 1.6 10
( 5 10 ) e
1 e e 5
1016

3
2
= 8.784 10 C/cm .
19

16. From Fig. 26, the critical field at breakdown for a Si one-sided abrupt junction is about 2.8
105 V/cm. Then from Eq. 85, we obtain
EW E
V B (breakdown voltage) = c = s c
2
2q

11.9 8.85 10 14 2.8 10 5

=
2 1.6 10 19

(N B )1

) (10 )
2

15 1

= 258 V

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EE221 HWS7

W=

2 s (Vbi V )

qN B

2 11.9 8.85 10 14 258

= 1.843 10 3 cm = 18.43m
1.6 10 19 1015

When the n-region is reduced to 5m, the punch-through will take place first. From Eq.
87, we can obtain

W
V B ' shaded area in Fig. 29 insert W
2
=
=
(Ec Wm )/2
VB
Wm
Wm
W
V B ' = V B
Wm

W
2
Wm

5
5
= 258
2
= 121 V
18.43
18.43

Compared to Fig. 29, the calculated result is the same as the value under the
conditions of W = 5 m and NB = 101 5 cm-3.
19. (a) The i-layer is easy to deplete, and assume the field in the depletion region is constant. From Eq.
84, we can obtain.

W
0

1
E
E
4
3
5
6
=

10
dx
1
10

10
=
1

E
=
4

10

(
10
)
= 5.87 10 5 V/cm

critical
5
4 10
4 105
5
3
V B = 5.87 10 10 = 587 V
4

(b) From Fig. 26, the critical field is 5 105 V/cm.

V B (breakdown voltage) =

EcW s Ec
=
2
2q

(N B )1

12.4 8.85 10 14 (5 10 5 )
(2 1016 )1
19
2 1.6 10
2

= 42.8 V.

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EE221 HWS7

20. a =

2 1018
= 10 22 cm 4
4
2 10
3/ 2

2EW 4Ec
VB =
=
3
3
=

4E c

3/ 2

2 s

1/ 2

(a )1 / 2

2 11.9 8.85 10 14

1.6 10 19

= 4.84 10 8 Ec

1/ 2

10 22

1 / 2

3/ 2

The breakdown voltage can be determined by a selected Ec.

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