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KA5x03xx-SERIES

KA5H0365R, KA5M0365R, KA5L0365R KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS)

Features
Precision Fixed Operating Frequency (100/67/50kHz) Low Start-up Current(Typ. 100uA) Pulse by Pulse Current Limiting Over Current Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode

Description
The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter
TO-220F-4L

Applications
SMPS for VCR, SVR, STB, DVD & DVCD SMPS for Printer, Facsimile & Scanner Adaptor for Camcorder

1. GND 2. Drain 3. VCC 4. FB

Internal Block Diagram

#3 VCC
32V 5V Vref Good logic OSC 9V 5A 1mA 2.5R 1R + 7.5V + 27V Thermal S/D OVER VOLTAGE S/D + S R L.E.B 0.1V S R Q Q Internal bias

#2 DRAIN
SFET

#4 FB

#1 GND

Power on reset

Rev.1.0.6
2003 Fairchild Semiconductor Corporation

KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25C, unless otherwise specified) Characteristic KA5H0365R, KA5M0365R, KA5L0365R Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed
(1)

Symbol VDGR VGS IDM ID ID EAS VCC,MAX VFB PD Derating TJ TA TSTG VDGR VGS IDM ID ID EAS VCC,MAX VFB PD Derating TJ TA TSTG

Value 650 30 12.0 3.0 2.4 358 30 -0.3 to VSD 75 0.6 +160 -25 to +85 -55 to +150 800 30 12.0 3.0 2.1 95 30 -0.3 to VSD 75 0.6 +160 -25 to +85 -55 to +150

Unit V V ADC ADC ADC mJ V V W W/C C C C V V ADC ADC ADC mJ V V W W/C C C C

Continuous Drain Current (TC=25C) Continuous Drain Current (TC=100C) Single Pulsed Avalanche Energy Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. KA5H0380R, KA5M0380R, KA5L0380R Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed
(1) (2)

Continuous Drain Current (TC=25C) Continuous Drain Current (TC=100C) Single Pulsed Avalanche Energy Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range.
(2)

Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25C 3. L = 13H, starting Tj = 25C

KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25C unless otherwise specified) Parameter KA5H0365R, KA5M0365R, KA5L0365R Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge KA5H0380R, KA5M0380R, KA5L0380R Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge
Note: 1. Pulse test: Pulse width 300S, duty 2% 2. 1 S = --R
(Note) (Note)

Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Condition VGS=0V, ID=50A VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) VGS=0V, ID=50A VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature)

Min. 650 2.0 800 1.5 -

Typ. 3.6 720 40 40 150 100 150 42 7.3 13.3 4.0 2.5 779 75.6 24.9 40 95 150 60 7.2 12.1

Max. 50 200 4.5 34 250 1000 5.0 34 -

Unit V A A S pF

nS

nC

V A A

S pF

nS

nC

KA5X03XX-SERIES

Electrical Characteristics (Control Part) (Continued)

(Ta = 25C unless otherwise specified) Characteristic UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Accuracy Initial Accuracy Initial Accuracy Frequency Change With Temperature (2) Maximum Duty Cycle FOSC FOSC FOSC Dmax KA5H0365R KA5H0380R KA5M0365R KA5M0380R KA5L0365R KA5L0380R -25CTa+85C KA5H0365R KA5H0380R KA5M0365R KA5M0380R KA5L0365R KA5L0380R Ta=25C, 0V<Vfb<3V Vfb>6.5V Ta=25C, 5VVfbVSD Ta=25C -25CTa+85C Max. inductor current VCC>24V VCC=14V VCC<28 90 61 45 62 100 67 50 5 67 110 73 55 10 72 kHz kHz kHz % % VSTART VSTOP VFB=GND VFB=GND 14 8.4 15 9 16 9.6 V V Symbol Test condition Min. Typ. Max. Unit

Maximum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current REFERENCE SECTION Output Voltage (1) Temperature Stability Peak Current Limit PROTECTION SECTION Over Voltage Protection Thermal Shutdown Temperature (Tj) Start-up Current Operating Supply Current (Control Part Only)
(1) (1)(2)

Dmax

72

77

82

IFB VSD Idelay Vref Vref/T IOVER VOVP TSD ISTART IOP

0.7 6.9 4 4.80 1.89 25 140 -

0.9 7.5 5 5.00 0.3 2.15 27 160 100 7

1.1 8.1 6 5.20 0.6 2.41 29 170 12

mA V A V mV/C A V C A mA

CURRENT LIMIT(SELF-PROTECTION)SECTION

TOTAL STANDBY CURRENT SECTION

Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process

KA5X03XX-SERIES

Typical Performance Characteristics(SenseFET part)

(KA5H0365R, KA5M0365R, KA5L0365R)

10

10

ID, Drain Current [A]

ID, Drain Current [A]

V GS Top : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V

150oC

@ Notes: 1. 300 s Pulse Test 2. TC = 25 oC 0.1

25oC

-25oC

@ Notes: 1. VDS = 30V 2. 300 s Pulse Test

10

0.1

10

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

7 6

RDS(on) , [ ] Drain-Source On-Resistance

5 4

V gs=10V

IDR, Reverse Drain Current [A]

V gs=20V 3 2 1 0

0.1

150oC

25oC @ Notes : 1. VG = 0V S 2. 300s PulseTest

@Note : Tj=25

ID,Drain Current [A]

0.01

0.4

0.6

0.8

1.0

1.2

VSD, Source-Drain Voltage [V]

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

700 600 500

VGS,Gate-Source Voltage[V]

Ciss

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

10 VDS=130V 8 VDS=320V VDS=520V 6

Capacitance [pF]

400 300 200

Coss
100

2 @Note : ID=3.0A

Crss
0 100 101
0 0 5 10 15

20

25

VDS, Drain-Source Voltage [V]

QG,Total Gate Charge [nC]

Figure 5. Capacitance vs. Drain-Source Voltage

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(KA5H0365R, KA5M0365R, KA5L0365R)

1.2

2.5

2.0

Drain-Source Breakdown Voltage

Drain-Source On-Resistance

1.1

BVDSS, (Normalized)

RDS(on), (Normalized)

1.5

1.0

1.0 @Notes: 1. VGS = 10V 2. ID = 1.5 A

0.9

@ Notes : 1. VGS = 0V 2. ID = 250A

0.5

0.8

-50

50
o

100

150

0.0

-50

50

100

150

TJ, Junction Temperature [ C]

T J, Junction Temperature [oC]

Figure 7. Breakdown Voltage vs. Temperature

Figure 8. On-Resistance vs. Temperature

102

ID , Drain Current [A]

Operation in This Area is Limited by R DS(on) 101 10 ms 100 DC 10 s 100 s 1 ms

3.0

2.5

ID, Drain Current [A]

103

2.0

1.5 1.0

10-1

@ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse

0.5

10-2 0 10

101

102

0.0 25

50

75

100

125

150

VDS , Drain-Source Voltage [V]

TC, Case Temperature [oC]

Figure 9. Max. Safe Operating Area

Figure 10. Max. Drain Current vs. Case Temperature

100 D=0.5
Z JC(t) , Thermal Response

0.2 0.1 0.05 0.02 0.01

10- 1

@ Notes : 1. Z J C (t)=1.25 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t)

single pulse

10- 2 - 5 10

10- 4

10- 3

10- 2

10- 1

100

101

t1 , Square Wave Pulse Duration

[sec]

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

101 V GS Top : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V 100

101

ID, Drain Current [A]

ID, Drain Current [A]

100 150oC

@ Notes: 1. 300 s Pulse Test 2. TC = 25oC 10-1 100 101

25oC

-25oC

@Notes: 1. VDS = 30 V 2. 300 s PulseTest 6 8 10

10-1

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. Output Characteristics

Figure 2. Thansfer Characteristics

8 7

Fig3. On-Resistance vs. Drain Current

10

Drain-Source On-Resistance

6 5 4 3 2 1 0 Vgs=20V

IDR, Reverse Drain Current [A]

Vgs=10V

RDS(on) , [ ]

150oC

25oC

@Note: Tj=25 0 1 2 3 4
0.1 0.4 0.6 0.8

@Notes: 1. VGS = 0V 2. 300 s Pulse Test 1.0

ID,Drain Current

VSD, Source-Drain Voltage [V]

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

1000 900 800 700

VGS,Gate-Source Voltage[V]

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss

10

VDS=160V VDS=400V VDS=640V

Capacitance [pF]

600 500 400 300 200 100 0 100

Coss Crss
101

2 @Note : ID=3.0A 0

10

15

20

25

30

VDS, Drain-Source Voltage [V]

QG,Total Gate Charge [nC]

Figure 5. Capacitance vs. Drain-Source Voltage

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

1.2

2.5

Drain-Source Breakdown Voltage

2.0

1.1

Drain-Source On-Resistance

BVDSS, (Normalized)

RDS(on), (Normalized)

1.5

1.0

1.0

0.9

@ Notes : 1. VGS = 0V 2. ID = 250A

0.5

@ Notes: 1. VGS = 10V 2. ID = 1.5 A

0.8

-50

50

100

150

0.0

-50

50

100

150

TJ, Junction Temperature [oC]

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage vs. Temperature

Figure 8. On-Resistance vs. Temperature

102

3.5

ID , Drain Current [A]

Operation in This Area is Limited by R DS(on) 101 100 s 1 ms 100 10 ms DC 10 s

3.0 2.5

ID, Drain Current [A]

103

2.0 1.5 1.0 0.5 0.0

10-1

@ Notes : 1. TC = 25 oC 2. TJ = 150 C 3. Single Pulse

o

10

-2

101

102

40

60

80

100

120

140

VDS , Drain-Source Voltage [V]

TC, Case Temperature [oC]

Figure 9. Max. Safe Operating Area

Figure 10. Max. Drain Current vs. Case Temperature

100
(t) , Thermal Response

D=0.5 0.2 0.1 10- 1 0.05 0.02 0.01 single pulse @ Notes : 1. Z J C (t)=1.25 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t)

JC

10- 2 - 5 10

10- 4

10- 3

10- 2

10- 1

100

101

t 1 , Square Wave Pulse Duration

[sec]

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics (Control Part) (Continued)

(These characteristic graphs are normalized at Ta = 25C)

1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25

Fig.1 Operating Frequency

25

50

75

100 125 150

1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25

Fig.2 Feedback Source Current

25

50

75

100

125 150

Figure 1. Operating Frequency

Figure 2. Feedback Source Current

1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25

Fig.3 Operating Current

1.1 1.05

Fig.4 Max Inductor Current

IIpeak 1 over
0.95 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150 0.9

Figure 3. Operating Supply Current

Figure 4. Peak Current Limit

1.5 1.3

Fig.5 Start up Current

1.15 1.1 1.05

Fig.6 Start Threshold Voltage

Istart

1.1 0.9 0.7 0.5 -25 0 25 50 75 100 125 150

Vstart 1
0.95 0.9 0.85 -25 0 25 50 75 100 125 150

Figure 5. Start up Current

Figure 6. Start Threshold Voltage

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25C)

1.15 1.1 1.05

Fig.7 Stop Threshold Voltage

1.15 1.1 1.05

Fig.8 Maximum Duty Cycle

Vstop 1
0.95 0.9 0.85 -25 0 25 50 75 100 125 150

Dmax 1
0.95 0.9 0.85 -25 0 25 50 75 100 125 150

Figure 7. Stop Threshold Voltage

Figure 8. Maximum Duty Cycle

1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25

Fig.9 Vcc Zener Voltage

1.15 1.1 1.05

Fig.10 Shutdown Feedback Voltage

Vsd 1
0.95 0.9
0 25 50 75 100 125 150

0.85 -25

25

50

75

100 125 150

Figure 9. VCC Zener Voltage

Figure 10. Shutdown Feedback Voltage

1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25

Fig.11 Shutdown Delay Current

1.15 1.1 1.05

Fig.12 Over Voltage Protection

Vovp 1
0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150

Figure 11. Shutdown Delay Current

Figure 12. Over Voltage Protection

10

KA5X03XX-SERIES

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta = 25C)

1.15 1.1 1.05

Fig.13 Soft Start Voltage

2.5 2 1.5
( Rdson)1

Fig.14 Drain Source Turn-on Resistance

Vss

1 0.9

0.95 0.85 -25

0.5 0 25 50 75 100 125 150 0 -25 0 25 50 75 100 125 150

Figure13. Soft Start Voltage

Figure 14. Static Drain-Source on Resistance

11

KA5X03XX-SERIES

Package Dimensions

TO-220F-4L

12

KA5X03XX-SERIES

Package Dimensions (Continued)

TO-220F-4L(Forming)

13

KA5X03XX-SERIES

Ordering Information
Product Number KA5H0365RTU KA5H0365RYDTU KA5M0365RTU KA5M0365RYDTU KA5L0365RTU KA5L0365RYDTU Product Number KA5H0380RTU KA5H0380RYDTU KA5M0380RTU KA5M0380RYDTU KA5L0380RTU KA5L0380RYDTU
TU :Non Forming Type YDTU : Forming type

Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming)

Marking Code 5H0365R 5M0365R 5L0365R Marking Code 5H0380R 5M0380R 5L0380R

BVDSS 650V 650V 650V BVDSS 800V 800V 800V

FOSC 100kHz 67kHz 50kHz FOSC 100kHz 67kHz 50kHz

RDS(on) 3.6 3.6 3.6 RDS(on) 4.6 4.6 4.6

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
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2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

12/9/03 0.0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation