1.0. Semiconductor Diodes 1.

2 Ideal Diode ID
+ VD Open Circuit VD ID Short Circuit

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1.0. Semiconductor Diodes 1.3 Semiconductor Materials Conductor Insulator Semiconductor

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= = =

(Resistivity, ohm-cm) * (Length, L cm) / (Area, cm2) RA/L (50,000 ohm-cm)(4 cm)/(2cm x 4cm) = 25,000 ohms

Resistivity of a semiconductor decreases as temperature increases. Negative temperature coefficient.

1.0. Semiconductor Diodes Ge and Si single-crystal structure

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Atomic structure: (a) germanium; (b) silicon.

1.0. Semiconductor Diodes Energy Levels

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1.0. Semiconductor Diodes

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W = QV joules Q = 1.6 x 10-19 coulomb (1 electron worth of charge)(1V) = = (1.6 x 10-19 coulomb)(1V) 3 electrons and 2 volts 3 electrons have a charge = 4.8(10-19 coulomb)(2 volts) =

1.6 x 10-19 Joule 1.6 x 10-19 Joule

4.8(10-19) comlomb 9.6(10-19) Joule

or

6eV

1.0. Semiconductor Diodes 1.5 Extrinsic Materials doped

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1.0. Semiconductor Diodes (a) n-type material; (b) p-type material.

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1.0. Semiconductor Diodes 1.6 Semiconductor Diode

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p-n junction with no external bias

Carriers combine, resulting in depletion region

1.0. Semiconductor Diodes Reverse-biased p-n junction.

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electrons

holes

1.0. Semiconductor Diodes Forward-biased p-n junction. holes electrons

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1.0. Semiconductor Diodes Silicon semiconductor diode characteristics.

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1.0. Semiconductor Diodes ID = Is(ekV/T 1) k V T constant, 11,600/ = 1 for Ge and 2 for Si diode forward voltage temperature in Kelvin, 273o + temp in centigrade

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Example: Si, voltage = 0.7, k=5800, Is = -25nA

k K TA TK Is VD ID 5800 273 20 K TA
9

25. 10 0.7 Is . e
k.

VD TK

.02605004764852208305

1.0. Semiconductor Diodes

20mA

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10mA

Zener region
0A

VT = 0.7 Si

-10mA

-20mA -6.0V I(D1)

-5.0V

-4.0V

-3.0V

-2.0V

-1.0V

-0.0V

1.0V

V_V1

Peak Inverse Voltage - usually >50 volts Temperature effects Current doubles for every10o C increase in temperature temperature r o VT decreases 2mv for every1 C

1.0. Semiconductor Diodes 1.8 Resistance Levels Diode I-V characteristic

30mA

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20mA

10mA

0A

0V
I(D1)

0.5V

1.0V

1.5V

2.0V

2.5V

3.0V

3.5V

4.0V

4.5V

5.0V

V_V1

DC Resistance RD = VD / ID
0.0667*1000

Q-point Quiescent point Operating point

1V/15mA =

66.7

1.0. Semiconductor Diodes AC or Dynamic Resistance

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30mA

20mA

10mA

0A

0V
I(D1)

0.5V

1.0V

1.5V

2.0V

2.5V

3.0V

3.5V

4.0V

4.5V

5.0V

V_V1

RD

Vd / Id

Q-point Quiescent point Operating point

for example at 25mA in Fig. 1.34 on page 22, RD = Vd / Id = = (0.8V 0.78V)/(30mA 20mA) 2 ohms

1.0. Semiconductor Diodes Using calculus we get approx, dI/dV 1/rD = = = = d/dV (Is(ekV/T 1) Is (k/T) ekV/T (k/T) Is ekV/T

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which is almost kID / T 1/rD = at room temp 25oC rd = 26mv / ID 26mv / 15mA 1.733 ohms

at 15mA, rd =

rd

(26mv / ID) + rB , add diode body resistance

1.0. Semiconductor Diodes Average AC resistance

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1.0. Semiconductor Diodes 1.9 Diode Equivalent Circuits Piecewise-Linear Equivalent Circuit

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1.0. Semiconductor Diodes Simplified equivalent circuit for the silicon semiconductor diode.

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Ideal diode and its characteristics.

1.0. Semiconductor Diodes 1.10 Diode Specification Sheets

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1.0. Semiconductor Diodes 1.11 Transition and Diffusion Capacitance Reverse bias capacitance of depletion region. CT Forward bias excess charge injected into regions just outside the depletion region, CD.

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1.12 Reverse Recovery Time Diffusion capacitance (charge stored). Reversing the bias sweeps the stored charge out.

1.0. Semiconductor Diodes 22 of 27 FIGURE 1-42 Transition and diffusion capacitance versus applied bias for a silicon diode.

At V = 0.25 the CD = 9pF At V = -15 the CT = 1pF

1.0. Semiconductor Diodes 1.13 Semiconductor Diode Notation 1.14 Diode Testing 1.15 Zener Diodes Conduction direction: (a) Zener diode; (b) semiconductor diode.

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1.0. Semiconductor Diodes

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1.0. Semiconductor Diodes 1.16 Light Emitting Diodes (a) Process of electroluminescence in the LED; (b) graphic symbol.

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1.0. Semiconductor Diodes

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1.0. Semiconductor Diodes 1.17 Diode Arrays Integrated Circuits 1.18 Summary 1.19 Computer Analysis

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