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In This Book:
Unit I: Hot (or energetic) Processes Unit II: Pattern Transfer (Lithography) Unit III: Thin Films Deposition Unit IV: Process Integration
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Contents (I)
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Contents (II)
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Contents (III)
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Contents (VI)
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Disciplines
5 2 1 3
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Objective
After taking this course, you will able to
Use common semiconductor terminology Describe a basic IC fabrication sequence Briefly explain each process step Relate your job or products to semiconductor manufacturing process
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IC
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Introduction
First Transistor, AT&T Bell Labs, 1947 First Single Crystal Germanium, 1952 First Single Crystal Silicon, 1954 First IC device, TI, 1958 First IC product, Fairchild Camera, 1961
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2005(f) 351.36 178.5 104.5 93.06 88.25 88.01 82.77 57.93 57.3 56.87
NCHU, EE, Prof. F. H. Wang
2005 15% 7.6% 4.4% 4.0% 3.8% 3.7% 3.5% 2.5% 2.4% 2.4%
Source:Gartner, 2005/12
18
2005
(1)Applied Materials623400 (2)Tokyo Electron445500 (3)ASML Holding316 000 (4)KLA-Tencor20500 (5)Advantest 196000 (6)Nikon156600 (7)Lam Research138200 (8)Novellus Systems13200 (9)Hitachi High-Technologies127700 (10)Canon124700
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Electrical/Computer engineers like to classify materials based on electrical behavior (insulators and conductors). Chemists or Materials Engineers/Scientists classify materials based on bond type (covalent, ionic, metallic, or van der Waals), or structure (crystalline, polycrystalline, amorphous, etc...).
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P-type Dopant
Types of Semiconductors:
N-type Dopants
Elemental: Silicon or Germanium (Si or Ge) Compound: Gallium Arsenide (GaAs), Indium Phosphide (InP), Silicon Carbide (SiC), CdS and many others Note that the sum of the valence adds to 8, a complete outer shell. I.E. 4+4,3+5, 2+6, etc...
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Silicon
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28
Group 4 Elements
*Only has a measurable bandgap near 0K **Different bonding/Crystal Structure due to unfilled higher orbital states
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N()
Si
Si
Si
Si
As
Si
Si
Si
Si
Valence band, Ev
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P()
Conducting band,Ec
Si Si Si
Hole
Si B Si
Eg = 1.1 eV Ea ~ 0.05 eV
Si
Si
Si
Electron
Valence band, Ev
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Compound Semiconductors(): Offer high performance (optical characteristics, higher frequency, higher power) than elemental semiconductors. Binary: GaAs, SiC, etc... Ternary: AlxGa1-xAs, InxGa1-xN where 0<=x<=1 Quaternary: InxGa1-xAsyP1-y where 0<=x<=1 and 0<=y<=1 Half the total number of atoms must come from group III (Column III) and the other half the atoms must come from group V (Column V) (or more precisely, IV/IV , III/V, or II/VI combinations).
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(electrons) (holes)
NP
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IC
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Resistor () Capacitor () Diode () Bipolar Transistor () MOS Transistor () Memory Device DRAM , SRAM , Non-volatile memory Optoelectronic Device TFTLCD, LED
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Resistor ()
l h w
l R wh
:
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Capacitor ()
h d
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hl C d
: Dielectric Constant()
Capacitor ()
Dielectric Layer () Poly 2
Poly Si Oxide Si
Poly Si Poly 1
Si
(flat)
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(stack)
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(trench)
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Parasitic Capacitor ()
Dielectric, Metal,
l d w
(parasitic capacitor)
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Diode ()
V1 > V2 , V1 < V2 ,
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current no current
P1 > P2,
current
-(I-V curve)
I V -I 0
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Bipolar Transistor ()
PNP or NPN Switch () Amplifier () Analog circuit () Fast high power device ()
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E
N P
B
N
E
B E
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B
P N P
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NPN
n+
AlCuSi SiO2 p+
p+
n+ N
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NPN
Metal CVD oxide Base Poly Field oxide p Emitter n+ n Epi n+ p Field oxide Buried Layer n+ Field oxide CVD oxide Collector CVD oxide
P-substrate
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MOS Transistor ()
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NMOS
VG Ground
VG = 0
VD
VD
Metal Gate
Metal Gate
n+ Source
+++++++ p-Si
n+ Drain
PMOS
VG Ground
VG = 0
VD
VD
Metal Gate SiO2 SiO2 p+ Source n-Si p+ Drain Positive charges No current
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p+ Source
+++++++ n-Si
p+ Drain
Silicon
Dominate IC industry
SiliconSiliconGermanium Compound
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4% 8%
1980
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1990
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2000
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Bipolar IC ()
Earliest IC chip 1961, four bipolar transistors, $150.00 TV VCR Cellular phone, etc.
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PMOS
First MOS field effect transistor, 1960 Used for digital logic devices in the 1960s Replaced by NMOS after the mid-1970s Faster than PMOS Used for digital logic devices in 1970s and 1980s Replaced by CMOS after the 1980s
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NMOS
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80IC
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CMOS Inverter ()
Vdd
Gate Source
PMOS
Drain
V in
Drain
Vout NMOS
Gate Source
Vss
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CMOS Mainly in 1990s CMOS as logic circuit Bipolar for input/output Faster than CMOS 1
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IC Chips
Memory () Microprocessor ()
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Memory Chips
Volatile memory ()
Dynamic random access memory (DRAM) Static random access memory (SRAM) Erasable programmable read only memory (EPROM) () EEPROM FLASH Memory
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Non-volatile memory
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DRAM
Capacitor
GND
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DRAM
DRAM NMOS (word line) NMOS /(bit line)
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DRAM
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SRAM
Bit select
Vcc
Bit
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EPROM ()
Non-volatile memory
(Memory ) 10
bios Floating gate () UV
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EPROM
Passivation Dielectric () VG
VD
Inter-poly Dielectric
Poly 2 Poly 1
Gate Oxide
n+ Source p-Si
n+ Drain
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EPROM Programming
Passivation Dielectric
VG>VT>0
VD > 0
Inter-poly Dielectric
Poly 2 e- e- e- e- e- e-
Gate Oxide
n+ Source p-Si
n+ Drain
Electron Tunneling( )
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Inter-poly Dielectric
Poly 2 e- e-
Gate Oxide
n+ Source p-Si
n+ Drain
Electron Tunneling
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Flash Memory
(NVRAM ) 10 (EEPROM ) EEPROM (bite ) (Data) (Digital Camera ) EEPROM
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TFT-LCD
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Display area
TFT
Amorphous-Si TFT
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Poly-Si TFT
ITO
2nd interlayer Al 1st interlayer
Gate N+ N+ P+
Gate P+
Buffer SiO2
Gate N+ N+
Glass
N channel
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P channel
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Pixel
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LED
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IC
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Development History
First Transistor(), AT&T Bell Labs, 1947 First Single Crystal Germanium(), 1952 First Single Crystal Silicon(), 1954 First IC device, TI, 1958 First IC product, Fairchild Camera, 1961
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Pioneers of Transistor
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Planar Process
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IC Scales
Integration level Small Scale Integration Medium Scale Integration Large Scale Integration Very Large Scale Integration Ultra Large Scale Integration Super Large Scale Integration Abbreviation SSI MSI LSI VLSI ULSI SLSI Number of devices on a chip 2 to 50 50 to 5,000 5,000 to 100,000 100,000 to 10,000,000 10,000,000 to 1,000,000,000 over 1,000,000,000
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(Chip)
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Modern Electronics
0.13 um
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Modern devices have lateral dimensions that are only fractions of a micron (~0.1 m) and vertical dimensions that may be only a few atoms tall.
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Moores Law
Gorden Moore 1964 12 198018 2010
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IC Technology Scaling
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SIA Roadmap
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DRAM
DRAM
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Killer Defects()
Y = 28/32 = 87.5%
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Y = 2/6 = 33.3%
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Power Density
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Number and kinds of processes and how they are integrated together. Important Metrics: thermal budget, layout density, process cost (masks and steps) Leverage Points: self-aligned techniques, trench isolation, local interconnect, planarization
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Process Integration
MOSIS is a low-cost prototyping and small-volume production service for VLSI circuit development.
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Processing Temperature
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Conductivity, , is material conducts electricity. Ohms Law: V=IR or J=E where J is current density and E is electric field.
It is the ability to control conductivity that make semiconductors useful as current/voltage control elements. Current/Voltage control is the key to switches (digital logic including microprocessors etc), amplifiers, LEDs, LASERs, photodetectors, etc...
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IC
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N-Silicon
N-Silicon
Primer
Field Oxide
Field Oxide
Photoresist
N-Silicon
N-Silicon
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Source/Drain Mask
UV Light
Photoresist N-Silicon
PR N-Silicon
Field Oxide
Field Oxide
PR N-Silicon
PR N-Silicon
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N-Silicon
p+
p+
N-Silicon
Field Oxide
Gate Oxide
Field Oxide
p+
p+
p+
p+
N-Silicon
N-Silicon
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Gate Oxide
Field Oxide
p+
p+
p+
N-Silicon
N-Silicon
p+
Gate Oxide
Field Oxide
Gate Oxide
p+
p+
N-Silicon
p+
p+
N-Silicon
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CMOS Inverter
n+ Source/Drain
p+ Source/Drain
p-Si
STI Bulk Si
n-Si
USG
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Nitride PD2 Oxide PD1 Metal 2, AlCuSi IMD PMD p+ n+ Poly Si Gate P-type substrate
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n+
p+ N-well
p+
Copper
Nitride etch stop layer Nitride seal layer Tantalum barrier layer T/TiN barrier & adhesion layer
FSG FSG
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Metal 4 Metal 3
Metal 2
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Memo
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