ON Semiconductor

2N3442

High-Power Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.

10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS
117 WATTS

Collector Emitter Sustaining Voltage

VCEO(sus) = 140 Vdc (Min)

Excellent Second Breakdown Capability

CASE 107
TO204AA
(TO3)

*MAXIMUM RATINGS

Rating

Symbol

Value

Unit

VCEO

140

Vdc

CollectorBase Voltage

VCB

160

Vdc

EmitterBase Voltage

VEB

7.0

Vdc

Collector Current Continuous

Collector Current Peak

IC

10
15**

Adc

Base Current Continuous

Peak

IB

7.0

Adc

Total Power Dissipation @ TC = 25
C

Derate above 25
C

PD

117
0.67

Watts
W/
C

TJ, Tstg

65 to +200

C

Symbol

Max

Unit

RJC

1.5

C/W

CollectorEmitter Voltage

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

* Indicates JEDEC Registered Data.

** This data guaranteed in addition to JEDEC registered data.

Semiconductor Components Industries, LLC, 2001

March, 2001 Rev. 10

Publication Order Number:

2N3442/D

2N3442

ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

VCEO(sus)

140

Vdc

Collector Cutoff Current

(VCE = 140 Vdc, IB = 0)

ICEO

200

mAdc

Collector Cutoff Current

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150
C)

ICEX

5.0
30

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

IEBO

5.0

20
7.5

70

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage

(IC = 200 mAdc, IB = 0)

mAdc

mAdc

ON CHARACTERISTICS (1)

DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 10 Adc, IB = 2.0 Adc)

VCE(sat)

5.0

Vdc

BaseEmitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)

VBE(on)

5.7

Vdc

CurrentGain Bandwidth Product (2)

(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)

fT

80

kHz

SmallSignal Current Gain

(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

hfe

12

72

DYNAMIC CHARACTERISTICS

PD /PD(MAX), POWER DISSIPATION (NORMALIZED)

*Indicates JEDEC Registered Data.

NOTES:
1. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
2. fT = |hfe| ftest
1.0
0.8
0.6
0.4
0.2
0

25

50

75
100
125
150
TC, CASE TEMPERATURE (C)

Figure 1. Power Derating

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2

175

200

2N3442
ACTIVE REGION SAFE OPERATING AREA INFORMATION

IC, COLLECTOR CURRENT (AMP)

20

10 s

There are two limitations on the powerhandling ability

of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200
C; TC is variable depending on conditions. At high case temperatures,
thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second
breakdown.

10
dc

7.0
5.0

30 s

3.0

50 s

2.0
1.0

100 s

TJ = 200C

CURRENT LIMIT
THERMAL LIMIT @ TC = 25C
SINGLE PULSE
SECOND BREAKDOWN LIMIT

0.7
0.5
0.3
0.2
2.0 3.0

1.0 ms
100 ms

50 70 100
5.0 7.0 10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

200

400

TJ = 150C

hFE, DC CURRENT GAIN

200
100
25C

60

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. 2N3442

VCE = 4.0 V

-
55C

40
20
10
6.0
4.0
0.1

0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

5.0 7.0 10

1.4
1.2

IC = 1.0 A

2.0 A

4.0 A

8.0 A

1.0
0.8
0.6
0.4
0.2
0
2.0

Figure 3. DC Current Gain

TJ = 25C
5.0

10

20
50 100 200
IB, BASE CURRENT (mA)

500

1.0k 2.0k

Figure 4. CollectorSaturation Region

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2N3442
PACKAGE DIMENSIONS
CASE 107
TO204AA (TO3)
ISSUE Z

A
N
C
T
E
D

SEATING
PLANE

2 PL

0.13 (0.005)
U

T Q

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

T Y

Q
0.13 (0.005)

INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188

MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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2N3442/D

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