DUAL BEAM FEI NOVA 600 NANOLAB

TABLE OF CONTENT

Figure 1: The dual beam FEI Nova 600

Dual Beam FEI Nova 600 NanoLab ........................................................................................................................................................... 1 1. System overview ................................................................................................................................................................................ 2 1.1 Introduction ............................................................................................................................................................................... 2 1.2 Description.................................................................................................................................................................................. 2 1.3 Gas injection system options (GIS) ................................................................................................................................... 3 1.4 Hardware options .................................................................................................................................................................... 3 1.5 Software options....................................................................................................................................................................... 4 1.6 Fabrication and machining performances ..................................................................................................................... 4 2. Get started............................................................................................................................................................................................. 5 2.1 Login .............................................................................................................................................................................................. 5 2.2 Loading sample ......................................................................................................................................................................... 5 2.3 Preliminary adjustments....................................................................................................................................................... 5 2.4 Where are the saved pictures on the network? ........................................................................................................ 10 3. Cross-Sections .................................................................................................................................................................................. 10 3.1 Automatic Cross-Section routines .................................................................................................................................. 10 3.1 Handmade Cross-Section ................................................................................................................................................... 11 4. Patterning .......................................................................................................................................................................................... 12 4.1 With basic shapes from the control software ............................................................................................................ 12 4.2 By converting the pattern files ........................................................................................................................................ 14 5. Weekly alignments ......................................................................................................................................................................... 16 6. Galeries................................................................................................................................................................................................ 17 7. DualBeam review ............................................................................................................................................................................ 19 7.1 John Melngailis's lectures .................................................................................................................................................. 19 7.2 Typical sputtering rates...................................................................................................................................................... 19 7.3 Bibliography ............................................................................................................................................................................ 20 7.4 Links ........................................................................................................................................................................................... 20 8. Access fees ......................................................................................................................................................................................... 20 8.1 Equipment ................................................................................................................................................................................ 20 8.2 Operator .................................................................................................................................................................................... 20 1

1. SYSTEM OVERVIEW
1.1 Introduction The Nova 600 NanoLab is a Dual Beam SEM / FIB for nanoscale prototyping, machining, characterization, and analysis of structures below 100 nm. It combines ultra-high resolution field emission Scanning Electron Microscopy (SEM) and precise Focused Ion Beam (FIB) etch and deposition. 1.2 Description GEOMETRY On a 21-port specimen chamber the electron and ion column are mounted at 52 degrees to each other. The beam coincidence point is at 5 mm working distance, which is also the eucentric working distance of the stage and the analytical working distance. There are 5 Gas Insulator System (GIS) ports grouped around the ion column. VACUUM The Nova 600 NanoLab uses a vacuum system, which is entirely oil-free including an Edwards SDX10 scroll pump. Differential pumping on the electron column ensures tip operation at the ultra-high vacuum levels (1010 mbar) even with a controlled gas flow in the specimen chamber. SAMPLE NAVIGATION The Nova 600 NanoLab is equipped with a 5-axes motorized x-y-z-rotate-tilt stage. Travel along the x and y-axis is 150 mm, the tilt range is 5 to 60 degrees. The motorized z-range is 10 mm. Minimum step size is 100 nm, repeatability at 0 degrees tilt is 1 m, and 2 m at 52 degrees tilt. ELECTRON OPTICS Magnetic immersion lens electron optics with ultra-high brightness Sirion emitter: Source: Schottky field emitter, Sirion type. Source lifetime: 1 year guaranteed. Voltage: 200 V to 30 kV, continuously adjustable. Beam current: < 20 nA. Resolution: 1.1 nm @ 15 kV, 2.5 nm @ 1 kV (< 60 dBC). Detection: in-lens secondary electrons (SE) and back scattered electrons (BSE). ION OPTICS Magnum field emission focused ion beam optics with liquid Gallium ion emitter: Source lifetime: 1500 hours. Voltage: 5 kV to 30 kV. Beam current: 20 nA in 15 steps. Resolution: 7.0 nm @ 30 kV. Detection: CDEM detector (direct ion detector). SCANNING SYSTEM High-resolution digital scanning engine controlled from the User Interface: Resolution: 512 x 442, 1024 x 884, 2048 x 1768, 3584 x 3094 pixels. Minimum Dwell Time: 50 ns / pixel. Electronic scan rotation by n x 360 degrees. PATTERNING SYSTEM High-resolution digital patterning engine controlled from the User Interface: Maximum resolution: 4k x 4k x 8 bit. Minimum Dwell Time: 100 ns / pixel. Maximum Dwell Time: 4 ms / pixel. Multiple pattern shapes. Variable dwell time pattern to give 3D milling. Complex milling patterns through Bitmap import. DETECTION The Nova 600 NanoLab features in-lens SE and BSE detection for high-resolution imaging at both high and low kVs, as well as an Everhart-Thornley SE detector for conventional SE detection. Optionally available is a 22

segment solid-state STEM detector for both bright- and dark-field imaging and Nano-analysis of FIB-prepared cross-sections. An integrated IR-CCD camera is standard for in-chamber viewing. IMAGING Images are displayed in an area of 1024 x 884 pixels, configurable for single frame display or 4-quadrant display. Images can be viewed live, averaged or integrated. Images can be saved in TIFF, BMP or JPEG file formats, and in 8-bit or 16-bit depth, to the hard disk or LAN from the graphical user interface. Image printing is also available from the user interface. PATTERNING Predefined patterns can be drawn in overlay in any of the four quadrants in the User Interface. Progress of the patterning is monitored in the User Interface through a progress bar. End-point detection is available through an integrated Real-time monitor. Simultaneous imaging and patterning is a standard feature of the Nova 600 NanoLab. SYSTEM CONTROL The Nova 600 NanoLab is controlled from a Windows 2000 Graphical User Interface running at 1280 x 1024 screen resolution on a dedicated microscope controller. A support computer is standard on the system for software utilities that could interfere with the control software running on the controller (e.g. LAN connection). The system includes two 18-inch LCD monitors, an optical mouse and a height-adjustable office desk. A manual user interface is optionally available. 1.3 Gas injection system options (GIS) INSULATOR DEPOSITION Gas chemistry (TEOS) solution for in-situ deposition of insulator material, preferably mounted on GIS port 4. The resistivity of the deposition has been greatly improved with this release of Insulator deposition which includes an additional deposition enhancement gas. PLATINUM DEPOSITION Gas chemistry solution for Ion or Electron beam deposition of Platinum-containing material. Platinum gas chemistry is the preferred metal deposition in case ease of use, high deposition rate and precision of the deposition is required. INSULATOR ENHANCED ETCH Gas chemistry solution (XeF2) for enhanced etching of insulator materials, mounted on any of the available GIS ports. This gas chemistry is used to selectively remove insulating materials while inhibiting the removal of conducting materials. SELECTIVE CARBON MILL Gas chemistry solution for enhanced etching of polymer-based materials such as resist, polycarbonate or diamonds. It mounts on any of the available GIS ports. 1.4 Hardware options OMNIPROBE SYSTEM The Omniprobe is FEIs preferred solution for in-situ TEM sample lift-out. ELECTROSTATIC BEAM BLANKER The Electrostatic Beam Blanker is an essential tool for Lithography applications on SEM and Small Dual Beam. This option will blank the Electron Beam with a decay/rise time of 1 ns when an external blanking voltage of +8 V is applied. The E-Beam will pass the column undisturbed when a voltage of 0 V is applied. SOLID- STATE STEM DETECTOR Two-segment solid-state STEM detector for high-resolution bright and dark field imaging of FIB-prepared cross sections and critical dimension measurements. The STEM detector is designed to hold up to 6 FIB-prepared sections placed on copper-grid supported carbon film. CDEM DETECTOR Channel Detection Electron Multiplier (CDEM) for direct ion imaging and ion-induced secondary electron imaging. The geometry of the detector is optimized for imaging with the ion column resulting in excellent S/N in ion imaging, as opposed to the Everhart Thornley SED which is optimized for S/N in electron imaging. The CDEM detector can be used in combination with the charge neutralizer providing ion imaging while the specimen is flooded with electrons to neutralize charge. 3

1.5 Software options AUTOFIB Multi-site, multi-task automation software for the Nova NanoLab. The software includes image recognition software. Application-specific automation software can be built on top of AutoFIB. AutoTEM is an example of such application specific software and hence requires AutoFIB. AUTOTEM Automation software for unattended TEM sample preparation by Focused Ion Beam Nano-machining. Throughput typically is two samples per hour depending on the required final thickness of the sample. The AutoTEM option requires Auto-FIB and Platinum or Tungsten gas chemistry. AUTO SLICE AND VIEW Automation software for unattended serial sectioning and imaging through a site-specific volume of the specimen. The sequence of images can be merged into a video or be used as the input for 3 dimensional reconstruction of the volume subjected to the slice and view process. PRO IMAGE ANALYSIS SOFTWARE Extended Image Analysis Software Package including image archive, particle analysis, FFT and scripting capabilities. Sample holder options UMB STUB HOLDER KIT Specimen stub holder kit containing the following items: Universal mounting base (UMB). 2 stub modules each holding 3 inch stubs 2 or 1 inch stubs, 2 clamp bars. System calibration sample. UMB FIB/TEM SPECIMEN HOLDER KIT TEM specimen holder kit containing 2 row holders for 6 TEM samples each. Also included are 2 row holder carriers, a storage box and a sample loading base. FP 3660/00 UMB Stub holder kit is required for this option. VISE SPECIMEN HOLDER Clamp specimen holder to mount irregular, large or heavy specimens to the specimen stage. 4'' WAFER HOLDER (100 MM) Light-weight, aluminium wafer holder for 4'' wafer with flat. The holder is delivered with an aluminium protective case. An Allen key is required to mount the holder to the rotation platform of the specimen stage. 6'' WAFER HOLDER (150 MM) Light-weight, aluminium wafer holder for 6'' wafer with flat. The holder is delivered with an aluminium protective case. An Allen key is required to mount the holder to the rotation platform of the specimen stage. 1.6 Fabrication and machining performances FABRICATION Predefined patterns (line, rectangle, polygon, circle, ring, regular cross-section and cleaning crosssetion). Predefined patterns can be drawn in overlay in any of the four quadrants in the User Interface. Bitmaps. 24 bit bitmaps can be imported. Stream files. Stream files are ASCII or binary files that contain the screen locations of each point to be milled. Script files. A script file is a list of commands that can be executed without user interaction. 1 M pixels addressable. MACHINING PERFORMANCES Minimum deposted line width : 20 nm achievable with electron and 50 nm achivable with ion beam (Pt). Minimum etched line width: < 15 nm achievable (Si). Maximum hole aspect ratio: 10:1 (Si, 500 nm hole radius). 20:1 achievable with XeF2. Typical TEM sample thickness: 50-100 nm (30-50 nm achievable).

2. GET STARTED
2.1 Login ON THE ZONE COMPUTER : Log on the computer zone. ON THE DUAL BEAM COMPUTER : Start the user interface if it is not already started (click on Start UI). Log on the system (File -> Log On). 2.2 Loading sample Vent the chamber with Vent button (cf. Figure 12). Set the stage position at X = 76 mm, Y = 76 mm and R = -135 (cf. Figure 13). Fix the sample on the appropriate holder. When the chamber is vented, fix the holder on the stage (cf. Figure 2, Figure 3, Figure 4, Figure 5, Figure 6). Close the chamber (cf. Figure 9). Start the pumping with Pump button and maintain the chambers door properly closed (cf. Figure 12). When the chamber is pumped, start the beams with the Wake Up button (cf. Figure 12). 2.3 Preliminary adjustments Set the stage position at X = 0 mm, Y = 0 mm (cf. Figure 13). Adjust the focus on your sample and press on the button to link Z to the focal distance (cf. Figure 11). Tip: You have to click on this button each time you change the focal distance because the system links the Z axis to the focal distance and not the reverse. EUCENTRIC POSITION : Set the stage at Z = 5 mm (cf. Figure 13). Set the focal distance and link again the Z axis with it (this link works only for small Z displacements, cf. Figure 11). With the SEM, zoom in till x10000 (cf. Figure 11) and center a recognizable target point (double click on it with the left mouse button, cf. Figure 14). Tilt the column at 7 and check if the central cross has moved on the sample (cf. Figure 15). Shift the cross to the target point by adjusting the stage height (medium mouse button on the camera quadrant). Tilt back to 0 and restart the height adjustment until the setting seems correct. Tilt to 52 and adjust the stage height (cf. Figure 16). Tilt back to 0 and restart the height adjustment until the setting seems correct. Tilt a last time to 52. SET THE SEM: Use the Auto Contrast and Brightness function (F9). Set the focal distance, the stigmatism with Stigmator and the lens alignment with the Modulator button and Lens Alignment setting. Do a sequence with these three settings utile you reach the prettiest picture (cf. Figure 12).

Tip: You have two different backscattering electrons detectors. The Field-Free detector the default detector which is flexible to use and the Immersion detector which have a better resolution. To increase the signal on noise ratio you can increase the integration time per pixel or integrating several full scanning (cf. Figure 11, Images parameters).

Figure 2: NEVER press on the stage

Figure 3: Stage

Figure 4: Raising ring

Figure 5: 4 inches holder

Figure 6: 4 inches wafer

Figure 7: Piece part holder and the elephant (to set the height)

Figure 8: The sample surface must be between the 2 trunk planes

Figure 9: Close the door

Figure 10: FEI Control Menu

Sources

Zoom & Beams

Settings

Figure 11: Tools Bar

Images parameters

Detectors Writing controls Control pages

Figure 13: Stage Control Page

Figure 12: Beam Control Page

SET THE FIB If it is not already done, set the focal distance to 19.5 mm (which have been set during the weekly alignments). Select a beam with a low energy (eg. 30 kV, 10 pA). Start the scanning (live mode). Use the Auto Contrast and Brightness function (F9). Take a picture (snapshot or photogrphy depend on needs) Tip: When you observe your sample have in mind than you can dramatically affect the sample with Ga + ion beam. That depends on three parameters: the acceleration voltage, the aperture diameter (which is an image of the current) and the magnification. These parameters define the power dessity on your sample. Bigger is it harder will be the milling so above a certain power density you will etch your sample. Because of that, we advice you to stop the ion scanning as often as possible.

Figure 14: Eucentric position Center a recognizable target point

Figure 15: Eucentric position Tilt at 7

F IGURE 16: E UCENTRIC POSITION T ILT AT 52

2.4 Where are the saved pictures on the network? When you save a picture the file should be in the \\Cmipc23\@public directory on the STI server. All the users have theirs own directory like @public\MyLaboratory\MyName.

3. CROSS-SECTIONS
3.1 Automatic Cross-Section routines Set the SEM (cf. 2.3) use an area near the one that interests you. Not the good one to avoid contamination. Set the Eucentric position. Set the FIB. Target the same point with the SEM and the FIB (use the beam shift setting). Target the area that interests you. Minimize the UI and load RunScript (its shortcut is on the desk).

F IGURE 17: R UN S CRIPT

Start the script number 6 (called wizard.spc). When the software ask you turn on the Pt GIS by double click on Cold on the Patterning tab (the third icon on the top of the Figure 13).

F IGURE 18: H EAT THE P T GIS

On the next popup click on <New> button. Select the recipe called section-15x4um.recipe.

F IGURE 19: H EAT THE P T GIS

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Select Edit Data. Set the needed cross-section width and depth.

F IGURE 20: D ATA EDITION

Wait and click on <Continue>. Dont move the stage and clik on <No>. Click on Run Now. To finish click on All.

F IGURE 21: S CRIPT SUCCESSFULLY F INISHED

Figure 22: Cross-section made with Script

Tip: When you use measurment tools, you can specify the measurment plan by selecting the correct Tilt Correction (on the Figure 22 you can observe linear mesurments on cross-section). 3.1 Handmade Cross-Section Set the SEM (cf. 2.3) use an area near the one that interests you. Not the good one to avoid contamination. Set the Eucentric position. Set the FIB. Target the same point with the SEM and the FIB (use the beam shift setting). 11

Target the area that interests you. Turn on the Pt GIS by double click on Cold on the Patterning tab (the third icon on the top of the Figure 13). When the Pt GIS is Warm you can insert it. Depose between 0.5 and 1 m with the rectangle shape tools and by set the Application parameter to Pt dep. Select the better FIB beam (to have a deposition time between 2 and 5 min). When dimentions and beam are properly set click on play button in the writing control on the tools bar (cf. Figure 11). Remove GIS from the chamber. Use the regular cross section tools to etch your sample . Set the Application parameter to Si to etch the sample. Select the better FIB beam (to have an etching time between 2 and 5 min). When dimentions and beam are properly set click on play button in the writing control. Now you will clean the cross section with the cleaning cross section tools Select again the better FIB beam (to have a cleaning time between 2 and 5 min). Tip: You can pattern things only into the FIB field of view. Dont forget to stop the FIB scanning as often as possible. Each time when you change the beam, check if the alignment is still correct. To be able to see the bottom of your ectching with 52 tilt on the SEM you must fallow this equation: . Its better to set the to avoid x shift problem. For the cleaning is enouth. .

Figure 23: Diferent kind of patterning

4. PATTERNING
4.1 With basic shapes from the control software Set the SEM (cf. 2.3) use an area near the one that interests you. Not the interesting one to be able to contaminate it. Set the Eucentric position. Set the FIB. Target the same point with the SEM and the FIB (use the beam shift setting). Target the area that interests you. Then draw the basic shapes need: o o Rectangle Circle 12

Line

o Polygon Several parameters are important: Icon or/and text name or Serial mode

Fonctionality In serial mode the patterns will be mill one after the other. In parallel mode all the patterns will be mill at the same time. At the CMI we only use this 2 applications Pt dep for platinum deposition (with the Pt GIS insert) Si to etch the surface Depend on the kind of shape selected Size on the X/Y plane with the specified unit Thinkness or depth with the specified unit (depend on the selected application) The time the beam spends on a single pixel per pass in the specified unit Depend on the kind of shape selected

Parallel mode Basic/ Application Pt dep or Si Basic/Sizes X/Y or radius sizes and Z size Basic/Dwell time Basic/ScanDirection Inner to Outer/Outer to Inner or Bottom to Top/Top to Bottom/Left to Right/Right to Left Advanced/positions X/Y positions

Positions of the shape which is selected with the specified unit The reference point is ce center of the field of view When parameters and beam are properly set click on play button in the writing control on the tools bar (cf. Figure 11).

Tip: For high resolution patterning you must use low current beam and small value of dwell time to obtain good results. Dont forget to set the beam stigmatism after having selected the current.

Gold on polymer - Current : 1 pA, Dwell time : 200 ns and Scan direction set along the rectangles 13

Aluminium on silicon - Current : 10 pA and Dwell time : 200 ns

Figure 24: Examples of high resolution writings

4.2 By converting the pattern files ON THE ZONE COMPUTER Open the software LinkCAD 5. Select your pattern format in Import Format (GDSII or CIF) and DualBeam Stream in Export Format. Click on Next. Dont change any parameters on the 1st page. Click on Next. On the 2nd page: Parameter nane Fonctionality Horizontal field of view This parameter depend on the size of your pattern (cf. table HFW vs magnification underneath) Ion beam current The current than you will use Material This one is the application (so select Pt dep or Si, cf. previous table) Depth Thinkness or depth with the specified unit (depend on the selected application) The time the beam spends on a single pixel per pass with Dwell time the specified unit Sets the beam diameter overlap Overlap Scan mode Serpentin mode In Serpentin mode the pattern will be milled from the or left to the right for odd lines and the reverse for the Raster mode even lines In Raster mode the pattern will be milled from the left to the right line by line File format ASCII Text ASCII file can be edited with text editor (eg notepad) or Binary Binary file are smaller the ASCII file but cannot be edited with text editor

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HFW 944 um 720 um 576 um 411 um 288 um 222 um 180 um 144 um 120 um 96 um 72 um 57.6 um 41.1 um 28.8 um 22.2 um 18 um 14.4 um 12 um 9.6 um 7.2 um 5.76 um 4.11 um 2.88 um 2.22 um 1.8 um 1.44 um

Mag 150x 200x 250x 350x 500x 650x 800x 1000x 1200x 1500x 2000x 2500x 3500x 5000x 6500x 8000x 10000x 12000x 15000x 20000x 25000x 35000x 50000x 65000x 80000x 100000x

Click on Next. Select your source file. Check if the file have been properly import thanks to the cells, layers and with the visualisation tools (View tab in the top-right). Select the export directory. Check if the file is properly export. If its not you will have information by putting the mouse over the red cross. Tip: The writing is limitated by 3 parameters: the beam size (beam current), the energy per volume unit (beam current and scanning area) and the numerical system resolution (4096 pixels on both axis of the field of view). ON THE DUALBEAM COMPUTER Set the SEM (cf. 2.3) use an area near the one that interests you. Not the good one to avoid contamination. Set the Eucentric position. Set the FIB. Target the same point with the SEM and the FIB (use the beam shift setting). Target the area that interests you. Select the pattern stream file . Click inside the FIB quad. Click on the File parameter and to select the stream file. Now you can set all the parameters as you saved them in the stream file during the conversion (cf. previous part) When parameters and beam are properly set click on play button in the writing control on the tools bar (cf. Figure 11).

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Figure 25: Example of stream file

5. WEEKLY ALIGNMENTS The CMI staffs do some electron beams and the focused ion beams alignments each week. On the SEM we align all the beams from 30 kV to 5 kV (except the smallest current). On the FIB we align each 3 week the fallowing beams:
30 kV 1 pA 10 pA 10 pA 30 pA 50 pA 0.1 nA 0.3 nA 0.3 nA 0.5 nA 1.0 nA 3 nA 5 nA 7 nA 7 nA 20 nA 10 kV 50 pA 120 pA 120 pA 5 kV 14 pA 29 pA 70 pA 70 pA

If you really need to use another beam for your application dont hesitate to ask us.

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6. GALERIES

SEM picture, Gold on carbon at 15kV

SEM picture, Gold on carbon at 15kV

FIB picture, Gold on carbon at 30 kV, 1 pA

FIB picture, Graphite at 30 kV, 1 pA

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Jumbled dualbeam pictures

The process chamber

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7. DUALBEAM REVIEW
7.1 John Melngailis's lectures John Melngailis has had more than 25 years experience in the field of micro and nanofabrication with the past 15 years devoted largely to focused ion beams. As of October, 1993 he is Professor of Electrical Engineering at the University of Maryland where he co-directs the Laboratory for Ion Beam Research and Applications which probably has the largest concentration of FIB equipment and expertise in the world. His previous research position was at MIT where he initiated and developed an internationally recognized program in applications of ion beams to lithography, to ion induced deposition of conductors, and to unique devices based on direct, maskless implantation. He was the Chair of the Gordon Conference on Nanostructure Fabrication in 1992, and the Program Chair of EIPBN2000 (Conference on Electron Ion and Photon Beam Technology and Nanofabrication) He has authored or co-authored more than 120 papers. Professor Melngailis received his Ph.D. in physics from Carnegie Mellon University. On Tuesday, June 15th and Wednesday, June 16th 2004, John Melngailis gave 3 lectures at the Center of MicroNanoTechnology (CMI). By courtesy of John Melngailis, here are the pdf files of his 3 lectures: Focused ion beams: sources, systems, and summary of applications Focused ion beam applications: milling and implantation Focused ion beam induced processes: deposition and etching 7.2 Typical sputtering rates Below are listed the typical sputtering rates for various materials with ions accelerated at 30 kV. The exact value will depend on patterning conditions such as dwell time, overlap...

Material C Si Al Ti Cr Fe Ni Cu Mo Ta W Au MgO SiO2 Al2O3 TiO Si3N4 TiN Fe2O3 GaAs Pt PMMA

Sputtering rates 3 -1 ([m] .[nC] ) 0.18 0.27 0.3 0.37 0.1 0.29 0.14 0.25 0.12 0.32 0.12 1.5 0.15 0.24 0.08 0.15 0.2 0.15 0.25 0.61 0.23 0.4

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In the following table, the time needed to mill a 10 m x 10 m x 5 m box for the previous materials is reported according to the previous sputtering rates. The time is given for two different ion beam currents: 100 pA for fine milling 5000 pA for coarse milling
Material C Si Al Ti Cr Fe Ni Cu Mo Ta W Au MgO SiO2 Al2O3 TiO Si3N4 TiN Fe2O3 GaAs Pt PMMA Time in hours Time in minutes Fine milling (100 pA) Coarse milling (5000 pA) 7.7 9.3 5.1 6.2 4.6 5.6 3.8 4.5 13.9 16.7 4.8 5.7 9.9 11.9 5.6 6.7 11.6 13.9 4.3 5.2 11.6 13.9 0.9 1.1 9.3 11.1 5.8 6.9 17.4 20.8 9.3 11.1 6.9 8.3 9.3 11.1 5.6 6.7 2.3 2.7 6.0 7.2 3.5 4.2

7.3 Bibliography Melngailis J. Critical review: focused ion beam technology and applications J. Vac. Sci. Technol. B 5 (1987) 469-495 Reyntjens S. and Puers R. A review of focused ion beam applications in microsystem technology J. Micromech Microeng. 11 (2001) 287-300 7.4 Links FEI European FIB Users Group

8. ACCESS FEES
8.1 Equipment EPFL and CMI partners(1): 120 CHF/hour Academic externs without scientific collaboration with the CMI(2): 162 CHF/hour Industrials without contract with the CMI(2): 240 CHF/hour 8.2 Operator EPFL : 100 CHF/hour Academic externs: 150 CHF/hour Industrials: 200 CHF/hour CMI partners are either industrials paying 2000 CHF/month or academic externs with scientific collaborations. (2) Service can be done exceptionally by the CMI. For information, service is regularly done at EMPA.
(1)

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