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Materials used for encapsulating semiconductor devices are known as plastic molding compounds. Molding compounds are generally composite materials consisting of epoxy resins, phenolic hardeners, silicas, catalysts, pigments, and mold release agents. Critical properties considered when selecting a molding compound include its glass transition temperature, Tg, moisture absorption rate, flexural modulus/strength, coefficient of thermal expansion, thermal conductivity, and adhesion properties. There are many types of molding compounds used in the semiconductor industry today. General-purpose molding compounds with relatively high flexural strengths but exert relatively larger stresses to the device may be used for large and thick packages such as the PDIP and PLCC. Low to ultra-low stress molding compounds are preferred for the encapsulation of thin packages. High-thermal conductivity molding compounds, on the other hand, are required to encapsulate high-power devices. Molding compounds used for surface mount devices may have a low moisture absorption rate, or a high flexural strength at board-mounting temperatures, or a combination of both in order to prevent popcorn cracking. Proper molding compound selection will prevent problems associated with manufacturability, package stress, package cracking, and interfacial delaminations.
Table 1. Formulations of Molding Compounds from Sumitomo Bakelite Co., Ltd.
EME-6650 Filler Content Epoxy Type Hardener Type Higher than 6600 Low Vis. ECN Standard
Standard New II
Standard New I
Standard Standard
ITEM Spiral Flow Gel Time Koka's vls. Alpha1 Alpha 2 Tg Flexural Strength(25C) Flexural Strength(240C) Flexural Modulus(25C) Flexural Modulus(240C) Specific Gravity Water Absorption Shore D Hardness Flame Resistance
6650 6600 R R 110 30 110 1.1 4.5 160 16 2.2 70 30 280 1.2 4.5 150 17 2.0
6300H 90 40 300 1.7 6.6 165 12 1.7 1200 75 1.81 0.30 82 V-0
ARATRONIC 2184 2184H 2184HH 2184HHH 2184-4 (formerly 2184) 2184-3 (formerly 2184H) 2184HH 2184HHH Obsolete Obsolete Obsolete Obsolete Updated Updated Updated Updated
Viscosity @ 175C (poises) 200-300 250-350 380-500 400-500 200-260 220-300 300-450 350-500
2184-2 2184-8
New New
45 35
22 18
80-150 120-200
See Also: Semiconductor Materials; Encapsulation; IC Manufacturing HOME Copyright 2003 www.SiliconFarEast.com. All Rights Reserved.
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Materials used for encapsulating semiconductor devices are known as plastic molding compounds. Molding compounds are generally composite materials consisting of epoxy resins, phenolic hardeners, silicas, catalysts, pigments, and mold release agents. Critical properties considered when selecting a molding compound include its glass transition temperature, Tg, moisture absorption rate, flexural modulus/strength, coefficient of thermal expansion, thermal conductivity, and adhesion properties. There are many types of molding compounds used in the semiconductor industry today. General-purpose molding compounds with relatively high flexural strengths but exert relatively larger stresses to the device may be used for large and thick packages such as the PDIP and PLCC. Low to ultra-low stress molding compounds are preferred for the encapsulation of thin packages. High-thermal conductivity molding compounds, on the other hand, are required to encapsulate high-power devices. Molding compounds used for surface mount devices may have a low moisture absorption rate, or a high flexural strength at board-mounting temperatures, or a combination of both in order to prevent popcorn cracking.
Proper molding compound selection will prevent problems associated with manufacturability, package stress, package cracking, and interfacial delaminations.
Table 1. Formulations of Molding Compounds from Sumitomo Bakelite Co., Ltd.
EME-6650 Filler Content Epoxy Type Hardener Type Catalyst Type LSA Type Higher than 6600 Low Vis. ECN Standard Standard New II
ITEM Spiral Flow Gel Time Koka's vls. Alpha1 Alpha 2 Tg Flexural Strength(25C) Flexural Strength(240C) Flexural Modulus(25C) Flexural Modulus(240C) Specific Gravity Water Absorption Shore D Hardness Flame Resistance
6650 6600 R R 110 30 110 1.1 4.5 160 16 2.2 70 30 280 1.2 4.5 150 17 2.0
6300H 90 40 300 1.7 6.6 165 12 1.7 1200 75 1.81 0.30 82 V-0
2184H 2184HH 2184HHH 2184-4 (formerly 2184) 2184-3 (formerly 2184H) 2184HH 2184HHH 2184-2 2184-8
24 18 16 30 25 18 16 45 35
16 12 8 22 18 12 8 22 18
See Also: Semiconductor Materials; Encapsulation; IC Manufacturing HOME Copyright 2003 www.SiliconFarEast.com. All Rights Reserved.
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proper addition of dopant elements, p-n junctions can be formed on silicon. Useful electronic components and integrated circuits can be built from p-n junctions. Silicon is obtained by heating silicon dioxide (SiO2), or silica, with a reducing agent in a furnace. Silicon dioxide is the main component of ordinary sand. Aside from being used as semiconductor substrate, silicon is also widely used as dielectric in integrated circuits, usually in the form of silicon dioxide. Dielectric layers are used to isolate conductive lines and the individual components in the circuit from each other. Polycrystalline silicon, or polysilicon, is also used for making resistors or conductors in integrated circuits. The top glassivation used to mechanically and electrically protect the die is also usually composed of silicon in the form of silicon nitride. Silicon is also widely used in semiconductor packaging, being the main ingredient of plastic encapsulants for integrated circuits. Silicon is also used in die overcoats.
Value
2.33 7 for crystalline silicon 1.11 eV 1.57 W/cm deg C 2.63e-6/deg C
Aluminum, symbol Al, is a lightweight metal with silvery appearance. It is the most abundant metallic element on earth. Aluminum is used in many aspects of semiconductor manufacturing. On the integrated circuit, Al metal lines are commonly used as the main conductor between components, mainly because of its low resistivity (2.7 ohm-cm). As a thin film, it also has good adherence to silicon dioxide. Aluminum is also the metallization used for the bonding and probing pads on the die. When used for IC metallization, Al is usually very lightly doped with other elements such as Si and/or Cu to improve its characteristics and reliability. In semiconductor assembly, ceramic packages are composed mainly of alumina. Aluminum is also used for wirebonding integrated circuits in ceramic packages. Table 2. Aluminum's Basic Properties Property Value Property
Atomic Number Atomic Group Atomic Weight Density 13 13 or IIIA 26.9815 2.7 g/cm3 Melting Point Boiling Temp Specific Gravity Resistivity
Value
660 deg C 2467 deg C 2.7 2.7 ohm-cm
Gold, symbol Au, is a soft metallic element that is bright yellowish in color. A good conductor of heat and electricity, it is also the most malleable and ductile of all metals.Gold is used in many aspects of semiconductor manufacturing, particularly in the assembly or packaging processes. Its most widespread use is in wirebonding. Because of gold's excellent conductivity and ductility, it is extensively used in making wires for the connection of the integrated circuit to the leads of the package. Aside from manufacturability, the ductility of gold wires offers one more advantage when used in plastic-encapsulated devices, i.e., it makes the wires resistant to wire breaking during the encapsulation process. Gold is also used as die attach material for the eutectic die attach process, which is commonly used in old hermetic assembly processes. Gold is also used to cover the die cavity and bonding posts of ceramic packages to protect these from chemical degradation. Table 3. Gold's Basic Properties Property Value
Atomic Number Atomic Group Atomic Weight
Property
Value
1064 deg C 2808 deg C 19.3
Silver, symbol Ag, is a shiny metallic element used for ornamental and coinage purposes since the ancient times. It is next only to gold in terms of malleability and ductility, and is also a good conductor of heat and electricity. In fact, silver is the best conductor of electricity, better even than copper and gold. Silver, like gold, is used in many facets of semiconductor manufacturing, again more particularly in the assembly or packaging processes. Most epoxy die
attach materials contain silver fillers for increased thermal and electrical conductivity. Silver is also used to cover the surfaces of the die pad and bonding fingers of the leadframes of plastic packages to prevent chemical degradation of these areas, which may lead to die attach and bonding problems. Table 4. Silver's Basic Properties Property Value
Atomic Number Atomic Group Atomic Weight
Property
Value
962 deg C 2212 deg C 10.5
Copper, symbol Cu, is one of the most widely used metals in the history of mankind, mainly because of its many desirable properties. It is the second best conductor of electricity, next only to silver but better even than gold. It also is very malleable and ductile, and is also a good conductor of heat. Copper is also widely used in semiconductor assembly. For instance, most leadframes for plastic packages are composed of copper. The leadframe is the skeletal support of a plastic package. Copper, being an excellent conductor, would've been a very good candidate for use in metal lines in an integrated circuit, but difficulties in the manufacturing of IC's using copper for metallization resulted in Al being the metal of choice for this purpose. Recent technological advancements though have already allowed the use of copper as metal lines in semiconductor devices. Table 5. Copper's Basic Properties Property Value
Atomic Number Atomic Group Atomic Weight
Property
Value
1083 deg C 2567 deg C 8.9
See Also: Leadframes; Die Attach Materials; Bonding Wires; Mold Compounds; Marking Inks;
Chemicals/Gases; Hazardous Chemicals; IC Manufacturing; Semiconductor Eqpt.
Product Primer
Epoxy Molding Compounds for Semiconductor Encapsulation
[Summary] Epoxy molding compounds are black plastic materials that encapsulate semiconductor chips to protect them from light, heat, humidity, dust, physical shock, etc. They are applied to almost all semiconductor packages.
[Method of Use] The method of use in transfer molding, which is the most common method, is as follows:
1) Set the lead frame connected to the semiconductor chip into the mold.
2) Set the molding compound tablet into the pot of the molding machine.
3) Under mold temperature conditions of 170-180C, melt the molding compound, and pour it into the mold under pressure.
4) After applying pressure for 45-90 seconds, when the molding compound has been fully cured, open the mold and take out the molded parts. This completes encapsulation process.
[Features and Strengths of Hitachi Chemical's Products] The strength of Hitachi Chemical's products lies in molding compounds best suited for memory devices, particularly DRAM and flash memory products. Miniaturization is most critical in memory devices among other
semiconductors. Memory-use molding compounds must be capable of withstanding harsh conditions, as semiconductor chips must be protected from heat and moisture by the thinnest possible compound layer.
[Market Share and Rank (company estimate)] World share: Over 20% Rank: No.2
[Manufacturing Bases] Hitachi Chemical Co., Ltd., Shimodate Works Hitachi Chemical (Malaysia) Sdn. Bhd.
paper describes the EMC formula composition, reaction mechanism, the relationship between performance and packaging technolo
icroelectronics industry and technological development of food, with the IC packaging technology development, the material prope
requirements, have taken advantage of driving the development of packaging materials. Epoxy Molding Compound (EMC) is the ba
e of the three main materials, using epoxy molding ultra-large scale integrated circuit packaging has become the mainstream at hom
sent more than 95% of the microelectronic devices are plastic devices.
compound based on epoxy resin as matrix resin, with phenolic resin as curing agent, plus filler, accelerator, flame retardants, colo
s, and other trace components, according to a certain percentage through the pre-mixed , extrusion, grinding, magnetic separation
dients
Compound Epoxy is an important part of one of the type of epoxy resin and its proportion of the different, not only directly affect t
of epoxy molding compound, but also a direct impact on the epoxy molding compound of thermal performance and electrical chara
of epoxy resin with different characteristics, such as o-cresol-type epoxy resin with high thermal stability and chemical stability; b
in with low shrinkage and low-volatile component; multi-functional-type epoxy resin has excellent thermal stability, fast curing and
ristics; biphenyl-type epoxy resin has a low viscosity, high filling characteristics; tea-type epoxy resin with high T g, high - heat-res
of the curing agent reaction with the epoxy resin to form a stable three-dimensional network structure. Curing agent and epoxy res
low characteristics of epoxy molding, thermal and electrical characteristics. Now commonly used phenolic resin following structure
Compounds are often used in the silica powder filler are generally crystalline, melt-type and three kinds of ball (Figure 1). Its shap
erator
ator determines the speed of curing of epoxy molding compound of the mechanical properties, thermal properties, moisture absorp
coupling is through a chemical reaction or chemical adsorption approach (Figure 2) to change the filler surface, the physical and c
ncrease their organic matter in the resin and increase the dispersion of filler and resin matrix interface compatibility, thereby impro
Mechanism
Compound is made from epoxy resin adhesives, phenolic resin as curing agent, and other groups were in accordance with a certa
ixing, and then after the hot mixture prepared by single-component composition. In the heat and under the influence of curing agen
en-loop and phenolic resin chemical reactions in which the role of crosslinking to become thermosetting plastics. Cured epoxy mol
excellent adhesion, excellent electrical insulation, high mechanical strength, heat resistance and resistance to chemical corrosion
e and application of
assification
elopment of IC molding, resin systems currently divided into: ECON-type, DCPD-type, Bi-Pheny1 type and Multi-Function type; acc
divided into: common type, fast curing, high thermal conductivity, low stress, low radioactive, low-warp type, no post-solid type, e
.; by end-use, appearance of the difference can be divided into solid plastic or epoxy die-casting material, said transfer (Transfer M
quid plastic material (Liquid Molding Compound), the bottom of the plastic filling three categories, in terms of scale to the largest s
ound.
cations
ce packaging
evices to smaller, light weight, high-performance direction, the device packages to smaller packages, high-power devices, SMD pa
different forms of packaging performance of epoxy molding compound made different requirements (Table 4).
g a high set of integrated circuits, wiring micro-oriented, large-scale chip and surface mount technology development, and the corre
development of epoxy molding is to make materials with high purity, low stress, low expansion, high heat and other performance ch
Trend
wners in order to support materials, IC packaging, and its development is followed by machine and the development of packaging t
ent trend of machine: light, small (portability); high-speed; increased functionality; improve reliability; lower costs; right, less enviro
hnology trends: package outline to the small, thin, light, high-density direction; scale from a single-chip to multi-chip development;
sional to three-dimensional assembly of development; packaging material from Tao Feng to the Plastic development; price, the cos
d.
nuous development of ever-changing high-tech applications of semiconductor technology continues to promote, so its epoxy packag
ingent requirements in the future epoxy molding compound, mainly to the following five aspects of development:
opriate nature of surface-mount high-and low-price-oriented direction. In order to meet the high nature of molding and low prices, s
ment emerging new type of epoxy resins, crystalline resins, because of the low molecular weight, melt viscosity is low, but the high
maneuverability, for high mobility packaging materials. Has some crystalline epoxy resin, suitable packaging materials in order to g
ost of the molecular chain grafting of the soft segment, but the forming and heat-resistant packaging materials can not meet the re
opriate type of packaging material flip the direction of development [2]. With the recent development of the electronics industry, as
stallation method, the so-called bare-die installed aroused great attention. In the bare-die flip-chip method to install, in order to pr
pollution of the external environment, the use of liquid packaging materials. In the liquid packaging compound, called for chip and
filling the gap due to the infiltration and filling theory is ultimately carried out through the capillary, thus requiring a very high resin
ate should be reduced. However, liquid packaging material and may increase the stress between the chip, thus requiring plastic ma
efficient of linear expansion, and now abroad, with a naphthalene ring structure using a new epoxy molding compounds prepared.
and other new packaging approach requires the development of new materials [3]. Bare die installation method, though high-densit
thod, but there are still some problems, such as the installation of devices and chip quality assurance, there was a new way that th
SP, which is a grid connection mode of packaging, not only can achieve smaller and lighter, but also to achieve high-speed transmi
e current package is in the period of rapid growth. However, this process in the cooling process after molding warpage phenomeno
ubstrate and packaging materials, shrinkage differences. To overcome the method is to try to make packaging material and the sub near expansion close to adhesives from packaging materials and substrates are required both at the same time develop new EMC o improve adhesion.
f EMC. With the development of electronic equipment, packaging materials, heat dissipation issues have been raised because the
oxy resins are organic polymer materials, based on the different molecular structure, the improvement of thermal conductivity has b
ad frame set of metallic materials, using 42 # copper alloy, because a relatively high thermal conductivity, copper alloy lead frame
film, thus requiring EMC has a good adhesion with adhesion. Some foreign manufacturers are research and development, through chain segments, improve Van De Walle gravity in order to enhance the framework of the gravitational EMC and copper.
ronmental protection EMCT: growing louder and louder as the global environmental protection, environmental protection requireme
ackage is the market is currently Warwick electronic system using non-flame retardant epoxy resin or higher, the amount of non-fla
being implemented EMC green commercial. There are also some foreign companies are experimenting with phosphorous compoun
s and Lin.
arge-scale integrated circuits to the superb, ultra-high-speed, high-density, high-power, high-precision, multi-direction and the rapi
f electronic packaging technology was developed by THT (PHT) to the surface-mount technology development, closure mounted fo
the (thin) quad-lead flat pack (TQFP / QFP) and ball grid array plastic loading (PBGA) and chip size package (CSP) direction, Epo
MC is moving in the direction of development of high-purity, high reliability, high thermal conductivity, high resistance to welding, h
strength, low stress, low expansion, low viscosity, easy processing, low environmental pollution and other direction .
Date2009