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# EC 2151 ELECTRIC CIRCUITS AND ELECTRON DEVICES (Common to Biomedical Engineering, Electronics and Communication Engineering and Information

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(Regulation 2008) Time : Three hours Maximum : 100 Marks Answer ALL questions PART A (10 2 = 20 Marks) 1. Find Req of the restive network . 2. Determine the current drawn by the source as shown in 3. For the circuit shown in fig.3 determine the value of Q at resonance and Bandwidth of the circuit. 4. A Series RC circuit consists of resistor of 10 and a capacitor of 0.1F as shown in Fig.4. A constant voltage of 20v is applied to the circuit at t=0. Determine voltage across resistor and capacitor. 5. State Mass-Action law. 6. Define diffusion capacitance. 7. Define Base width modulation and bring out its consequences. 8. Mention the advantages of MOSFET over JFET. 9. Draw the two transistor model of an SCR with its characteristic curve. 10. Under what principle does a photo voltaic cell work? PART B (5 16 = 80 Marks) 11. (a) (i) Use Thevenin's theorem to find the current through 5 resistor (Marks 8) (ii) Find the voltage across 2 resistor in fig.6 by using super position theorem. (Marks 8) Or (b) (i) Determine current flowing through the 5 resistor in the circuit Norton theorem. (Marks 8) (ii) Determine the maximum power delivered to the load in the circuit (Marks 8) 12. (a) (i) Find the complete solution for the current in a RLC circuit for a sinusoidal input. (Marks 8) (ii) The circuit consists of R = 10, L = 0.5 H and C = 200 F. If the switch is closed when f = 30. Determine the current equation. (Marks 8) Or (b) (i) Consider the single tuned circuit 1. Resonant frequency 2. Output voltage at resonance and 3. Maximum output voltage. Assume Rs>>wrL, and k=0.9. (Marks 8) (ii) With neat diagram, obtain gain of a double tuned amplifier with critical value of mutual inductance. (Marks 8) 13. (a) (i) State continuity equation and prove that concentration of changes is independent of time with zero electric field. (Marks 8) (ii) With neat diagram, explain the formation of PN junction and derive its depletion width. (Marks 8) Or (b) (i) What is the breakdown mechanism found in Zener diode? Explain it with neat diagram. (Marks 8) (ii) Write detailed notes on space charge and diffusion capacitance. (Marks 8) 14. (a) Explain the construction and working principle of a JFET and obtain its characteristic parameters. (Marks 16) Or (b) Explain the operation of a Depletion mode MOSFET and its comparison over enhancement MOSFET with neat

diagrams. (Marks 16) 15. (a) Discuss the construction and operation of a Tunnel Diode with neat energy band diagram. (Marks 16) Or (b) Write detailed notes on: (i) DIAC and TRIAC (Marks 5) (ii) Photodiode and Phototransister (Marks 5) (iii) LED and LCD (Marks 6)

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B.E./B.Tech. DEGREE EXAMINATION, JUNE 2010 Second Semester Computer Science and Engineering EC2151- ELECTRIC CIRCUITS AND ELECTRON DEVICES (Regulation 2008) (Common to Biomedical Engineering, Electronics and Communication Engineering and Information Technology) Time: Three hours Maximum: 100 Marks Answer ALL Questions PART A- (10 X 2 = 20 Marks) 1. State Kirchoff's current law and voltage law. 2. State Superposition theorem. 3. What is quality factor? 4. Find the resonant frequency in the ideal parallel LC circuit shown in figure. 5. Give the expression for transition capacitance and diffusion capacitance of a PN diode. 6. Define avalanche breakdown. 7. What is "Early effect" in CB configuration and give its consequences? 8. Distinguish clearly the difference between N with P channel FETs. 9. Give some applications of tunnel diode. 10. What is meant by photovoltaic cell? PART B- (5 X16 = 80 Marks) 11. (a) (i) State Thevenin's and superposition theorems, mention one application. (8 Marks) (ii) Find the Thevenin's equivalent of the circuit shown in figure. (8 Marks) (Or) (b) (i) Consider the circuit in figure. (12 Marks) (1) If Rout = 3Kohm, find the power delivered to it. (2) What is the maximum power that can be delivered to any Rout? (3) What two different values of Rout will have exactly 20mw delivered to them? (ii) State maximum power transfer theorem. (4 Marks) 12. (a) In the circuit shown in figure, determine the complete solution for the current when the switch is closed at t =0. Applied voltage is v(t) = 400cos(500t + ^/4), resistance R = 15ohm, inductance L =

0.2H and capacitance C = 3 Uf. (16 Marks) (Or) (b) (i) Explain (using the relevant circuit) the double tuned circuit and derive the expression for A and Mc. (10 Marks) (ii) The tuned frequency of a double tuned circuit shown in fig. is 10^4 rad/sec. If the source voltage is 2v and has a resistance of 0.1 ohm, calculate the maximum output voltage at resonance if R1= 0.01 ohm, L1= 2UH, R2 = 0.1 ohm and L2 = 25UH. (6 Marks) 13. (a) (i) Derive the PN diode current equation. (8 Marks) (ii) Explain how the depletion region at a p-n junction is formed and explain with relevant sketches for charge density, electric field intensity and potential energy barriers at the junction. (8 Marks) (Or) (b) (i) Draw the Zener diode characteristics and explain the working o Zener diode. (8 Marks) (ii) Draw the Zener regulation circuit and explain its function for input and output regulation. (8 Marks) 14. (a) Explain the input and output characteristics of a common emitter configuration with a neat sketch. (16 Marks) (Or) (b) What is MOSFET? Explain the construction and working principle of enhancement mode and depletion mode MOSFET with a neat diagram. (16 Marks) 15. (a) What is tunneling phenomenon? Describe the V-I characteristics and concepts of tunnel diode with application. (16 Marks) (Or) (b) Explain the negative resistance characteristics of Unijunction Transistor with neat sketch. (16 Marks)