FQD30N06L / FQU30N06L

May 2001

QFET
FQD30N06L / FQU30N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

TM

Features
24A, 60V, RDS(on) = 0.039 @ VGS = 10V Low gate charge ( typical 15 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers

D D
!
"

G! G S

! "
" "

D-PAK
FQD Series

I-PAK
G D S
FQU Series

Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TC = 25C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

FQD30N06L / FQR30N06L 60 24 15 96 20
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * Power Dissipation (TC = 25C)

400 24 4.4 7.0 2.5 44 0.35 -55 to +150 300

TJ, TSTG TL

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 2.85 50 110 Units C/W C/W C/W

* When mounted on the minimum pad size recommended (PCB Mount)

2001 Fairchild Semiconductor Corporation Rev. A1. May 2001

FQD30N06L / FQU30N06L

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 125C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 60 ------0.07 ------1 10 100 -100 V V/C A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = 5 V, ID = 250 A VGS = 10 V, ID = 12 A VGS = 5 V, ID = 12 A VDS = 25 V, ID = 12 A
(Note 4)

1.0 ----

-0.031 0.038 23

2.5 0.039 0.047 --

V S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---800 270 50 1040 350 65 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 48 V, ID = 32 A, VGS = 5 V
(Note 4, 5)

VDD = 30 V, ID = 16 A, RG = 25
(Note 4, 5)

--------

15 210 55 110 15 3.5 8.5

40 430 120 230 20 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 24 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IF = 32 A, dIF / dt = 100 A/s
(Note 4)

------

---55 80

24 96 1.5 ---

A A V ns nC

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.8mH, IAS = 24A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 32A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300us, Duty cycle 2% 5. Essentially independent of operating temperature

2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

FQD30N06L / FQU30N06L

Typical Characteristics

ID, Drain Current [A]

10

ID, Drain Current [A]

VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top :

10

150 25 -55
Notes : 1. VDS = 25V 2. 250 s Pulse Test

Notes : 1. 250 s Pulse Test 2. TC = 25

10 -1 10

10

10

10

10

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

80

Drain-Source On-Resistance

R DS(ON) [m ],

VGS = 10V VGS = 5V

40

IDR , Reverse Drain Current [A]

60

10

20

150
0

25

Note : TJ = 25

Notes : 1. VGS = 0V 2. 250 s Pulse Test

0 0 20 40 60 80 100 120

10

0.4

0.6

0.8

1.0

1.2

1.4

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

2000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

12

10

Ciss
Notes : 1. VGS = 0 V 2. f = 1 MHz

V GS , Gate-Source Voltage [V]

1500

Coss

VDS = 30V
8

VDS = 48V

Capacitance [pF]

1000

Crss
500

2
Note : ID = 32A

0 -1 10

10

10

10

15

20

25

30

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

FQD30N06L / FQU30N06L

Typical Characteristics

(Continued)

1.2

2.5

BV DSS , (Normalized) Drain-Source Breakdown Voltage

1.0

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

RDS(ON) , (Normalized) Drain-Source On-Resistance

1.1

2.0

1.5

1.0

0.5

Notes : 1. VGS = 10 V 2. ID = 12 A

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs. Temperature

25
Operation in This Area is Limited by R DS(on)

10

20

I D , Drain Current [A]

1 ms
10
1

ID, Drain Current [A]

10
2

100 s 10 ms DC

15

10

10

Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

o o

10

-1

10

-1

10

10

0 25

50

75

100

125

150

VDS, Drain-Source Voltage [V]

TC, Case Temperature []

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs. Case Temperature

(t), T h e rm a l R e s p o n s e

D = 0 .5
10
0

0 .2 0 .1 0 .0 5
10
-1

N otes : 1 . Z J C( t ) = 2 . 8 5 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t )

JC

0 .0 2 0 .0 1 s in g le p u ls e

PDM t1 t2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ]

Figure 11. Transient Thermal Response Curve

2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

FQD30N06L / FQU30N06L

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS Qg 5V Qgs Qgd

VGS

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS VGS RG

RL VDD

VDS

90%

5V

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG DUT
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp

ID (t) VDS (t) Time

10V

2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

FQD30N06L / FQU30N06L

Peak Diode Recovery dv/dt Test Circuit & Waveform

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

2001 Fairchild Semiconductor Corporation

Rev. A1. May 2001

FQD30N06L / FQU30N06L

Package Dimensions

DPAK
6.60 0.20 5.34 0.30 (0.50) (4.34) (0.50) 0.70 0.20 2.30 0.10 0.50 0.10

0.60 0.20

6.10 0.20

2.70 0.20

9.50 0.30

0.91 0.10

0.80 0.20

MAX0.96 2.30TYP [2.300.20]

0.76 0.10 2.30TYP [2.300.20]

0.89 0.10

0.50 0.10 1.02 0.20 2.30 0.20

(0.70)

(0.90) (0.10) (3.05)

6.10 0.20

9.50 0.30

2.70 0.20

(2XR0.25)

0.76 0.10

2001 Fairchild Semiconductor Corporation

(1.00)
Rev. A1. May 2001

6.60 0.20 (5.34) (5.04) (1.50)

MIN0.55

FQD30N06L / FQU30N06L

Package Dimensions

(Continued)

IPAK
6.60 0.20 5.34 0.20 (0.50) (4.34) (0.50) 0.50 0.10 2.30 0.20

0.60 0.20

0.70 0.20

0.80 0.10

6.10 0.20

1.80 0.20

MAX0.96 0.76 0.10

9.30 0.30

2.30TYP [2.300.20]

2.30TYP [2.300.20]

0.50 0.10

2001 Fairchild Semiconductor Corporation

16.10 0.30
Rev. A1. May 2001

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H2

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