Escolar Documentos
Profissional Documentos
Cultura Documentos
IRF7406
HEXFET Power MOSFET
Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S
1 8 7
A D D D D
S
S G
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
SO-8
Max.
-6.7 -5.8 -3.7 -23 2.5 0.02 20 -5.0 -55 to + 150
Units
A W W/C V V/ns C
Typ.
Max.
50
Units
C/W
www.irf.com
1
06/12/03
IRF7406
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -30 V VGS = 0V, ID = -250A -0.020 V/C Reference to 25C, ID = -1mA 0.045 VGS = -10V, I D = -2.8A 0.070 VGS = -4.5V, ID = -2.4A -1.0 V VDS = VGS, ID = -250A 3.1 S VDS = -15V, ID = -2.8A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 59 ID = -2.8A 5.7 nC VDS = -2.4V 21 VGS = -10V, See Fig. 6 and 12 16 VDD = -15V 33 ID = -2.8A ns 45 RG = 6.0 47 RD = 5.3, See Fig. 10 2.5 4.0 nH pF 1100 490 220
D
Between lead tip and center of die contact VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, IF = -2.8A di/dt = 100A/s
Notes:
www.irf.com
IRF7406
1000
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
1000
100
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
100
-4.5V
10
-4.5V
10
1 0.1 1
1 0.1
100
1000
2.0
I D = -4.7A
1.5
T = 25C J
100
1.0
TJ = 150C
0.5
10 4 5 6 7
VGS = -10V
www.irf.com
IRF7406
2500
2000
20
16
C, Capacitance (pF)
1500
Ciss Coss
12
1000
500
Crss
0 1 10 100
0 0 20
100
100
10
100us
TJ = 150C
TJ = 25C
10 1ms
VGS = 0V
1.2
1 0.1
10ms
100
www.irf.com
IRF7406
6.0
V DS
5.0
RD
V GS RG
D.U.T.
+
4.0
3.0
-10V
Pulse Width 1 s Duty Factor 0.1 %
2.0
1.0
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
100
D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100
10
0.1 0.0001
0.001
www.irf.com
V DD
IRF7406
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
QGS VG
QGD
VGS
-3mA
IG
ID
Charge
www.irf.com
-10V
D.U.T.
VDS
IRF7406
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
RG VGS*
**
dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ -
V DD
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D= P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS
www.irf.com
IRF7406
Package Outline
SO-8 Outline Dimensions are shown in millimeters (inches)
D -B-
DIM
5
INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157
MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99
A
6 5 H 0.25 (.010) M A M
8 E -A-
A1 B C D E
e 6X
K x 45 e1 A
e e1 H K L
.050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8
0.10 (.004) L 8X 6 C 8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 )
1.78 (.070) 8X
EXAMPLE: T HIS IS AN IRF7101 (MOS FET) DAT E CODE (YWW) Y = LAST DIGIT OF T HE YEAR WW = WEEK LOT CODE PART NUMBER
www.irf.com
IRF7406
Tape & Reel Information
SO-8 Dimensions are shown in millimeters (inches)
1.85 (.072) 4.10 (.161) 1.65 (.065) 3.90 (.154) 1.60 (.062) 1.50 (.059) 0.35 (.013) 0.25 (.010)
TERMINATION NUMBER 1
FEED DIRECTION
NOTES: 1 CONFORMS TO EIA-481-1 2 INCLUDES FLANGE DISTORTION @ OUTER EDGE 3 DIMENSIONS MEASURED @ HUB 4 CONTROLLING DIMENSION : METRIC
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/03
www.irf.com