UNISONIC TECHNOLOGIES CO.

, LTD 4N65
4 Amps, 650 Volts N-CHANNEL POWER MOSFET
1

Power MOSFET

TO-220

DESCRIPTION
The UTC 4N65 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

TO-220F

TO-220F1

FEATURES
* RDS(ON) = 2.5 @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
1

1 TO-251

TO-252

SYMBOL
2.Drain
1 1

TO-263

TO-262

1.Gate

3.Source

ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 4N65L-TA3-T 4N65G-TA3-T 4N65L- TF1-T 4N65G-TF1-T 4N65L- TF3-T 4N65G-TF3-T 4N65L-TM3-T 4N65G-TM3-T 4N65L-TN3-R 4N65G-TN3-R 4N65L-T2Q-T 4N65G-T2Q-T 4N65L-TQ2-R 4N65G-TQ2-R 4N65L-TQ2-T 4N65G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-251 TO-252 TO-262 TO-263 TO-263 1 G G G G G G G G Pin Assignment 2 3 D S D S D S D S D S D S D S D S Packing Tube Tube Tube Tube Tape Reel Tube Tape Reel Tube

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ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)

Power MOSFET

PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 4.4 A Continuous ID 4.0 A Drain Current Pulsed (Note 2) IDM 16 A Single Pulsed (Note 3) EAS 260 mJ Avalanche Energy 10.6 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 106 W TO-220F/TO-220F1 36 W Power Dissipation PD TO-251 50 W TO-252 50 W Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25C 4. ISD4.4A, di/dt 200A/s, VDDBVDSS, Starting TJ = 25C

ELECTRICAL CHARACTERISTICS (TC =25, unless otherwise specified)

PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS MIN TYP MAX UNIT 650 10 100 -100 0.6 2.0 4.0 2.5 520 70 8 670 90 11 V A nA nA V/ V pF pF pF

VGS = 0 V, ID = 250 A VDS = 650 V, VGS = 0 V Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient BVDSS/TJ ID = 250 A, Referenced to 25C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 A Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2 A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, f = 1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS

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ELECTRICAL CHARACTERISTICS(Cont.)

Power MOSFET

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 13 35 VDD = 300V, ID = 4.0A, RG = 25 Turn-On Rise Time tR 45 100 (Note 1, 2) Turn-Off Delay Time tD(OFF) 25 60 Turn-Off Fall Time tF 35 80 Total Gate Charge QG 15 20 VDS= 480V,ID= 4.0A, VGS= 10 V Gate-Source Charge QGS 3.4 (Note 1, 2) Gate-Drain Charge QGD 7.1 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A 1.4 Maximum Continuous Drain-Source Diode IS 4.4 Forward Current Maximum Pulsed Drain-Source Diode ISM 17.6 Forward Current VGS = 0 V, IS = 4.4 A, Reverse Recovery Time tRR 250 dIF/dt = 100 A/s (Note 1) 1.5 Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width300s, Duty cycle2% 2. Essentially independent of operating temperature

UNIT ns ns ns ns nC nC nC V A A ns C

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TEST CIRCUITS AND WAVEFORMS

Power MOSFET

D.U.T.

+ VDS -

+ L

RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS (Driver)

Period P.W.

D=

P. W. Period

VGS= 10V

IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt

Body Diode Recovery dv/dt VDS (D.U.T.) VDD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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TEST CIRCUITS AND WAVEFORMS (Cont.)

Power MOSFET

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD

ID(t)

VDS(t)

10V

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs. Temperature 1.2 Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) Drain-Source On-Resistance, RDS(ON) (Normalized) () 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100

Power MOSFET

On-Resistance Junction Temperature

1.1

1.0

0.9

Note: 1. VGS=0V 2. ID=250A -50 0 50 100 150 200

Note: 1. VGS=10V 2. ID=4A -50 0 50 100 150 200

0.8 -100

Junction Temperature, TJ ()

Junction Temperature, TJ ()

On-State Characteristics 10
VGS 10V 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0V Top:

Transfer Characteristics 10

25 5.0V 1 150

0.1

Notes: 1. 250s Pulse Test 2. TC=25

0.1 2 4 6

Notes: 1. VDS=50V 2. 250s Pulse Test

0.1

10

10

Drain-to-Source Voltage, VDS (V)

Gate-Source Voltage, VGS (V)

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TYPICAL CHARACTERISTICS(Cont.)

Power MOSFET

Thermal Response, JC (t)

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PD (w)

Gate-Source Voltage, VGS (V)

Capacitance (pF)

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TYPICAL CHARACTERISTICS(Cont.)

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

Drain Current, ID (A)

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