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STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1 STB4NK60Z-STD4NK60Z-STD4NK60Z-1

N-CHANNEL600V-1.76-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK

Zener-Protected SuperMESHPower MOSFET


TYPE STP4NK60Z STP4NK60ZFP STB4NK60Z STB4NK60Z-1 STD4NK60Z STD4NK60Z-1
s s s s s s

VDSS 600 600 600 600 600 600 V V V V V V

RDS(on) <2 <2 <2 < 2 <2 <2

ID 4 4 4 4 4 4 A A A A A A

Pw 70 W 25 W 70 W 70 W 70 W 70 W

3 1

D2PAK TO-220

3 1 2

TYPICAL RDS(on) = 1.76 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY

TO-220FP

3 1
3 12
1

3 2

DPAK

I2PAK

IPAK

DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING
s

ORDERING INFORMATION
SALES TYPE STP4NK60Z STP4NK60ZFP STB4NK60ZT4 STB4NK60Z-1 STD4NK60ZT4 STD4NK60Z-1 March 2003 MARKING P4NK60Z P4NK60ZFP B4NK60Z B4NK60Z D4NK60Z D4NK60Z PACKAGE TO-220 TO-220FP D2PAK I2PAK DPAK IPAK PACKAGING TUBE TUBE TAPE & REEL TUBE TAPE & REEL TUBE 1/16

STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
STP4NK60Z STB4NK60Z STB4NK60Z-1

Value
STP4NK60ZFP STD4NK60Z STD4NK60Z-1

Unit

VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg

Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 4 2.5 16 70 0.56

600 600 30 4 (*) 2.5 (*) 16 (*) 25 0.2 3000 4.5 2500 -55 to 150 -55 to 150 4 2.5 16 70 0.56

V V V A A A W W/C V V/ns V C C

( ) Pulse width limited by safe operating area (1) ISD 4A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed

THERMAL DATA
TO-220 D2PAK I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.78 62.5 300 TO-220FP 5 DPAK IPAK 1.78 100 C/W C/W C

AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 4 120 Unit A mJ

GATE-SOURCE ZENER DIODE


Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs= 1mA (Open Drain) Min. 30 Typ. Max. Unit V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components.
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STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 50A VGS = 10V, ID = 2 A 3 3.75 1.76 Min. 600 1 50 10 4.5 2 Typ. Max. Unit V A A A V

DYNAMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 2 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 3 510 67 13 38.5 Max. Unit S pF pF pF pF

VGS = 0V, VDS = 0V to 480V

SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 300 V, ID = 2 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 4 A, VGS = 10V Min. Typ. 12 9.5 18.8 3.8 9.8 26 Max. Unit ns ns nC nC nC

SWITCHING OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300 V, ID = 2 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 4A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 29 16.5 12 12 19.5 Max. Unit ns ns ns ns ns

SOURCE DRAIN DIODE


Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100A/s VDD = 24V, Tj = 150C (see test circuit, Figure 5) 400 1700 8.5 Test Conditions Min. Typ. Max. 4 16 1.6 Unit A A V ns nC A

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

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STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
Safe Operatingrea:TO-220/DPAK/IPAK/D2PAK/I2PAK Safe Operating Area For TO-220FP A

Thermal Impedance:TO-220/DPAK/IPAK/D2PAK/I2PAK Thermal Impedance For TO-220FP

Output Characteristics

Transfer Characteristics

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Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Threshold Voltage vs Temp.

Normalized On Resistance vs Temperature

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STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature

Maximum Avalanche Energy vs Temperature

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STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

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STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1

TO-220 MECHANICAL DATA


DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107

D1

L2

F1

G1

E
Dia. L5 L7 L6 L4
P011C

L9

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F2

H2

STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1

TO-220FP MECHANICAL DATA


mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409

DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7

L3 L6 L7
F1 F

G1 H
F2
L2 L5

E
1 2 3
L4

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TO-252 (DPAK) MECHANICAL DATA


mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0
o

DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35

inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8
o

TYP.

TYP.

MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398

0.8 0.024 0
o

0.039 0o

P032P_B

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STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1

TO-251 (IPAK) MECHANICAL DATA


DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033

C C2
L2 D

B3

B6

A1

B5

A3
=

B2

G
=

L1

0068771-E

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STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1

TO-262 (I2PAK) MECHANICAL DATA


mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055

DIM.

C2

B2

L1 L2 D L
P011P5/E

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A1

STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1

D2PAK MECHANICAL DATA


mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch

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D2PAK FOOTPRINT

TUBE SHIPMENT (no suffix)*

TAPE AND REEL SHIPMENT (suffix T4)*


REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992

TAPE MECHANICAL DATA


DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956

BASE QTY 1000

* on 14/16 sales type

STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1

DPAK FOOTPRINT

TUBE SHIPMENT (no suffix)*

All dimensions are in millimeters

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix T4)*


REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992

TAPE MECHANICAL DATA


DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W

BASE QTY 2500

mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40
15.7 16.3

inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618
0.641

MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1

* on sales type
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

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