ANALYTICAL CHARGE CONTROL MODEL FOR GaAs/AIGaAs-BASED MULTIPLE-QUANTUM-WELL POWER HEMTs

M. Nawaz Centre for Technology at Kjeller (UNIK) P.O. Box 70 N-2007 Kjeller, Norway

Geir U. Jensen Telenor Research P.O. BOX a3 N-2007 Kjeller, Norway KEY TERMS HEMT, deuice modeling, multichannel HEMT, power declice

oped a closed-form charge control and dc model for DH HEMTs. The buffer two-dimensional electron gas (2 DEG) channel beneath the quantum well and cross linking of the carriers inside the GaAs well were considered. In this article we report, for the first time to our knowledge, a simple analytical charge control model for multiple-quantum-well HEMTs based on a GaAs/AlGaAs material system. The developed model is extended to triple-quantum-well structures (six channels). The rcsults were compared both theoretically (with numerical calculations based on the selfconsistent solutions of Poisson and Schrodinger equations) and experimentally. Excellent agreement was obtained in both cases. Simple analytical expressions are developed for average distance of the 2 DEG density from the top and bottom heterojunctions.
2. ANALYTICAL MODEL

ABSTRACT
We haue deueloped an analytical charge control model for GaAs / AlGaAs multiple-quantum-well(MQW-)based high-electron-mobility transistors. The valid$ of the deuelnped model was tested with numerical calculationsbased on self consistent solutions of Poisson and Schriidinger equations. Excellent agreement was achieued with both numerical calculations and experimental data. Furthermore, simple expressions are deueloped for the location of sheet charge density fiom the top and bottom interfaces inside the GaAs quantum well. The developed modelprouides a good tool for the design und optimization of microwave circuit design. 0 1996 John Wiley & Sons, Inc.
1. INTRODUCTION

The equilibrium sheet charge density of the two-dimensional electron gas (2 DEG) formed at the heterointerface [6] is calculated as

During the past few years, high-electron-mobility transistors (HEMTs) based on various material systems (e.g., GaAs/AlGaAs, InGaAs/AlCaAs, InAlAs/InGaAs) have been extensively studied for different technological applications at microwave and millimeter-wave frequencies [l-141. Particularly, HEMT is considered as an attractive candidate for microwave power applications, because of its high sheet charge density and hence large drain current capability. However, the drain current driveability is limited for conventional HEMTs based on a single-channcl structure. The sheet charge density and output drain current can be increased by stacking up several conducting channels parallel with each other (socalled multichannel HEMT), and modulated by the same gate voltage. Thus, sheet charge density increases linearly with the number of channels [l]. This approach has been demonstrated previously both theoretically (using self-consistent numerical calculations) and experimentally [2- 111. Excellent dc and rf performance has been reported for MQWbased HEMTs. Recently, a high drain current of 1100 mA/mm (the highest value reported so far) was measured by using a triple-quantum-well structure for a GaAs/AlGaAs material system [ 111. Due to the increase of conducting channels, numerical calculations become more computer intensive, which means that device optimization will require much time. However, analytical models are desirable because they provide a faster response and good physical insight into the device operation. Various analytical models both for single-heterojunction (SH) and double-heterojunction-(DH-) based HEMTs [3, 8, 12, 141 have already been developed. An analytical charge control model for DH HEMTs was presented by Cazaux, Pavlidis, and Chau [3], but the model show poor agreement with the exact self-consistent calculations, particularly near the threshold regions. Recently, Yu and Ibrahim [8] have devel-

where 6 = E, - El is the potential difference for the degenerate case far away from the heterointerface. m = 1,2 denotes the top and bottom heterojunction interfaces, respectively. A E , is the conduction-hand discontinuity. nd is the doping concentration in the AlGaAs layer and e is the spacer-layer thickness. 6, is a small correction voltage. Figure 1 shows the conduction-band energy diagram and defines the layer parameters used in the text. The conducting channels are formed by undoped GaAs quantum-well layers of thicknesses d,,, d,,, and d,, (starting from the gate surface), sandwiched between two AlGaAs barrier layers. Carriers in the GaAs wells are supplied from both sides of the well from the doped AlGaAs layers. The Fermi level is assumed constant throughout the semiconducting layers. Figure 2 shows the GaAs/AlGaAs-layer structure schematically. The doping concentration in the doped AlGaAs layers was 1.0 X 1.0l8 cm -3. The model is based on the assumption that the GaAswell thickness is large enough so that two separate triangular wells are formed at the top and bottom heterointerfaces. This aswmption has been tested and verified previously by various authors [3, 51. Therefore, validity of the present analytical model for the control of two independent sheet charge densities inside the quantum well formed at the top and bottom iperfaces limits the minimum thickness of the well to 200 A. The Schottky barrier height (qcp,) was 1.0 eV. The donor energy level ( E d )was 50 meV. The conduction-band discontinuity A E, and the AlGaAs permittivity E are both dependent on the aluminum composition X in the AlGaAs layers, and are calculated by [3]

AE,
E

0.67

AEg = 0.835X3,

(2) (3)

12.88 - 2.82X.

The analytical expressions that relate the Fermi energy with the sheet charge density at different temperatures have been developed previously [12, 13, 151. However, the difference of the analytical results with the exact numerical calculations (in the triangular-well approximation) varies from author to au-

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 11, No. 1, January 1996

x3
nd3

x4
nd4

5 l -c .

Enc
+ive x

-ive x 0 4 1 -

Figure 1 Conduction-band energy diagram for the GaAs/AlGaAs multiple-quantum-well HEMT device

Source

Gate

Drain

AlGaAs 300A Ndoped AlGaAs 50A

I .O x '0 1

GaAs

3O0A Wellb
1.0 x 10"

AlGaAs 50A AIGaAs 300A Ndoped AlGaAs 50A

cm-3

GaAs

300A Wellc

AlGaAs 5OA AlGaAs 200A N doped

lo" cm-3

Undoped

2DEG

Undoped

Undoped

2DEG

Undoped

S.I. SUBSTRATE
Figure 2 Multiple-quantum-well HEMT layer structure used in the present study

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 11, No. 1, January 1996

thor. In our analysis we use a simple analytical expression that is accurate with less than 1% calculation error in the active region of the devicc operation developed by Molony, Ponse, and Morkoc [12] as

tric field F Z i ( x )equal to zero and using Eqs. 10-(12), we get

e,2,+-

Ef = K ( ~ z , ) ' -~0.155, /
E~ = L ( n s ) 2 / 3 ,

at T at T

300 K, 77 K,

(4)

(5)

Substituting F,, and FZr from Eqs. (8) and (10) in Eq. (61, we get charge control for the total sheet charge density nsT,!= nsl,rn 5 2 , r inside the quantum well as

where K = 1.09 X L = 2.1027 X lo-'', and n, is in reciprocal square meters and the corresponding Fermi energy is in electron volts. The maximum sheet charge density for the top and bottom channels were calculated by iterating Eqs. (1) and (4). The iteration process converges rapidly, with less than 10 iterations required to obtain a sheet charge density of 10" cm-2. The Poisson equation is solved inside the GaAs quantum well, which relates the electric field at the top and bottom interfaces with the sheet charge density as

(14) where dT,; is the total thickness from the top heterointerface of the bottom well (well c) to the gate surface. VP,,; the total pinch-off voltage from the top heterointis erface of the bottom well to the gate surface. i = a, b, c is the well index, and j = 1,2,3,4 and k = 2,3,4,5 are indexes for the physical parameters of the layer structure. The procedure for the use of general charge-control equations [Eqs. (7) and (14)] is as follows: For example, if we want to use this model for HEMT based on a single-quantum-well structure, then i = a , j = 1, k = 2 will be used in charge-control equations, where

Integrating the Poisson equation from the top interface of the bottom well (well c) to the gate surface (from x = 0 to x = - d T , in each layer gives the following gcncral equation, which relates the chargc dcnsity formcd at the top heterointerface with the applied gate bias:

Equation (7) can be written in another general form, like

where

is the total band bending from the top interface ol the bottom well to the gate surface. F,, = qn,,,,/&, is the electric field at the top heterointerface. Further, integrating the Poisson equation from the lower interface of the bottom well (well c) to the end of the depletion region, we get

is the pinch-off voltage, and dT.a = d,, + e l , is the total thickness from the top interface of the quantum well (well a ) to the gate surface. For the use of a two-quantum-well structure, i = b, j = 2, k = 3 will be used in the charge control equations, where

where
" 2 =

-- -- 62,i
9 9

AEc2,i

Ef2,i

(11)

is total band bending from top of the conduction band of lower interface of the bottom well (well c ) to far away from the interface (neutral region). (12) is the pinch-off voltage of the bottom AlGaAs layer beneath the bottom well (well c). The back depletion region thickness ( d R , L d , , z + e 2 t ;see Figure 1) is calculated by setting elec=

will be the corresponding pinch-off voltage. The total thickness from the bottom well (well b ) to the gate surface will be

For the use of this model for a three-quantum-well-based HEMT, i = c, j = 3, k = 4 will be used, and thc pinch-off

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 11, No. 1 , January 1996

voltage will become

- qndld?a --

nsd is the 2 DEG occupancy in different subbands. Substituting Eqs. (20) and (21) into Eq. (22), we get
qndzdabdta

qnd3dbedia 81
+

281

+
68

qndzdabela

El

El
qnd3dbcdwa

(23) where

+ qnd3dbcelu
El

qnd2dabdwa

qnd2dabe2a E2

+
+

qnd3dbce2u 82 qnd3dbcelb

+-qnd2d?b
282

1.

(24)

+ qnd3dbcdab
82

qnd3dbcdwb
Eg

82

Because the sheet charge density inside the GaAs quantum well is related with the heterointerface electric fields [Eq. (6)],the average 2 DEG distance from the bottom interface is related with the average of the fields inside the GaAs quantum well. The average field is

E2

where Fli is the field at the top heterointerface and F2i is the field at the bottom heterointerface. The use of Eqs. (23)-(25) gives us the average distance of the bottom-channel 2 DEG from the top heterointerface during inverted HEMT mode as
dadeg = dw - AZ.

(26)

AEc2,a

AEcl,u

AEc2,b

+-

AEcl,b

(18)

and total thickness from the top of the bottom well (well c) to the gate surface will be

When the bottom sheet charge density reaches its maximum value, simultaneously the top channel starts to accumulate 2 DEG charges. In this mode (which is called the normal HEMT mode of operation), the average distance from the top heterointerface will become

where d, is the average distance of the top-channel 2 DEG from the top heterointerface, which is'equal to All other equations will remain the same. Only indexes for layer physical parameters will be changed. The charge control equations [Eqs. (7) and (1411 were further used to find the position of 2 DEG sheet charge density from the top and bottom heterointerfaces inside the GaAs quantum well. The discrete subband energy is related with the sheet charge density as (28) and d, is the average distance of the bottom-channel 2 DEG from the top heterointerface, as shown below:
d,
= d,

H
( ~ ~ ~ 1' 2 ) ' ~ ~

(29)

where d = 0 , 1 , 2 represents the index for discrete subband energies. y d is the measured parameter given elsewhere [16]. The centroid of the sheet charge density occupying the dth energy level [14] from the heterojunction is approximated as
Z - -Ed, d - 3Fi

In this case F,, = q n s l J E , and FZi= q n , , 2 , i / E . Figure 3 shows the location of 2 DEG density from the top heterojunction during normal and inverted HEMT modes of operation.
3. RESULTS AND DISCUSSION

(21)

where Fi is the heterointerface electric field. The 2 DEG distance from the bottom heterointerface is calculated by taking the weighted average of all energy levels as
AZ

d nsdZd

(22)

nsT,i

Conduction-band energy and carrier concentration for a single quantum well (well a ) at various gate biases based on numerical calculations by solving Poisson and Schrodinger equations self consistently are shown in Figure 4. At VBs = 0.5 V (near threshold) only the bottom channel is conducting, where carriers are confined mainly to the lower interface of the well. The sheet charge density at the bottom channel increases with the increase of gate voltage (so-called inverted H E W mode) until the bottom channel becomes saturated and simultaneously the top channel starts to conduct [Figure

MICROWAVE AND OPTICAL TECHNOLOGY LEVERS / Vol. 11, No. 1, January 1996

4
d,

2DEG

AlGaAs

normal HEMT mode

Figure 3 Location of 2 DEG sheet charge densities from the top heterointerface

4(b)]. Because the carriers are localized near the bottom heterointerface, smaller gate capacitance i s achieved due to the increased separation between the metal gate and the 2 DEG density. The top heterointerface starts to accumulate 2 DEG charges at V,, = 0.2 V, which is clearly shown by the emergence of the second peak. At VgS 0.5 V, two clear = distinct peaks show the conduction of two channels separately inside the quantum well. The gate capacitance increases due to the decreased distance between the sheet density and the metal gate. One can imagine two HEMT devices working in parallel, which doubles the maximum

sheet charge density. However, this situation is different for thin quantum wells (50 A), where only a single peak for the carrier distribution appears at the same gate bias of P& = 0.5 V [Figure 4(d)]. Carriers are mainly located inside the middlc of the well for a thin quantum well. Figure 5 shows the analytical results [using Eqs. (7) and (14)] for the dependence of sheet density on the gate bias. The sheet charge density as a function of gate bias increases with different ratcs, which is in accordance with the results of present numerical calculations and also with self-consistent calculation presented by Inoue, Sakaki, Yoshino, and Hotta

.
-

. vgS=o.zv
N%t=1.248~12 cm-2 dw=3Wdi

T4WK

3
! !
i:

- B(ev) .. - 18+1E .-.... rn (cm-3)

..........
Ef (cV)
10 .

i :

S s

'

0,5

0.0

Figure 4 Conduction-band energy and carrier distribution at different gate biases and well widths

MICROWAVE AND OPTICAL TECHNOLOGY LETERS / Vol. 11, No. 1, January 1996

3,OOe+12
nS . T.

oooooo
0 0

dT,i = 350.k. e l , =
c2.

= 50A. dw, = 300A

0

1.41.2 -

"d,

= "dl

0 1.ox 1ol8 m-'

- Q -

--t-

we11 c analytical well a numerical

wcllaanalytical
well b numerical

- C -

wcllbanalytical

0 0 0 0

XI

XZ = 0.3

oo
10.8 0.6

"Z. S.

0.4 -

0.2-

v s (v) p
Figure 5 Analytical calculation of the sheet charge density as a function of the gate bias for a single-quantum-well (well a ) HEMT
Figure 6 Comparison of analytical and numerical calculation of the sheet charge density as a function of gate bias for a multiplequantum-well HEMT

[51. The procedure for the charge control calculations is as follows; During inverted HEMT mode of operation in which only the bottom channel is conducting nS1,, 0 and n,,,, = = ns2, Because the total concentration ( n s T J depends on the ,. , and two Fermi energies Ffl,[ Ef2,, for the top and bottom heterointerfaces, respectively, a separate iteration procedure was adopted for the charge control calculations. Because the top heterointerface lies between the gate surface and the bottom channel ns2,, should be related first to Ef,,,. and Yu Ibrahim [81 have developed an analytical expression that ) relates the sheet charge density ( n S 2 , ,at the bottom channel with the Fermi energy (Efl,,) top interface through at the cross linking of the carriers from the lower interface (before the conduction of top channel) inside the GaAs quantum well. Equation (14) was first iterated with Eq. (4) for E f 2 , , , and then with the following equation for Efl,l [8]

All parameters A, p, Y , p , cy are given in Reference [&I. When sheet charge density at the lower interface reaches its maximum value, the top channel starts to conduct simultaneously. Under a normal HEMT mode of operation, when both channels are conducting, Eq. (7) was iterated with Eq. (4) for Efl,, Eq. (14) was iterated with Eq. (4) for EfZ,,. this and In mode, bottom-channel 2 DEG density will be calculated as ns2, = nS,, - nS,, The back depletion region thickness dB, ,. beneath the bottom well depends on the Fermi energy Efz,i and hence sheet charge density nSa,;. initial value was Its ; calculated by setting n S 2 ,= nso2,i (i.e., equilibrium sheet

density in the bottom channel) i Eq. (4). As long as the n bottom channel is saturated n S l , iis greater than zero, ns2,i and hence dB,i remain constant. When n,,,, becomes zero and nS2,istarts decreasing with the gate bias, the depletion region thickness dB,i starts to increase due to the decrease of the Fermi energy Ef2,i in accordance with the numerical calculations [51. Figure 6 shows results of the analytical and numerical calculations for the dependence o the sheet charge density f on the gate bias, performed in this work for multiple-quantum-well structures. For comparison of the analytical and numerical calculations, aluminum composition of X = 0.3 was assumed in all AlGaAs layers. The conduction-band discontinuity was h Ec, = 300 meV. The layer thicknesses are given in Figure 2. The unintentional doping concentraacceptor. We observe tion was assumed to be 5 X 1014 an increase of the population in each quantum well with gate bias and the appearance of different threshold and saturation voltages for each well. To avoid electrostatic interaction and coupling between the two quantum wells, thickly doped AlGaAs barrier layers were used. However, thick AlGaAs barriers introduce nonlinearities in the transconductance and C-V profiles, which degrades the device performance (due to the decreased transconductance as a result of the parallel conduction path in the doped AlGaAs layers) [l, 21. Therefore, one must optimize the device layer structure to avoid this MESFET operation of the device for practical applications. The layer structure based on coupled quantum wells (using thin AlGaAs barriers) as proposed by Daembkes and Weimann [2] is therefore a beneficial approach to operate the device over a wide gate bias range without transconductance degradation. The validities of the analytical charge control equations were also verified by varying different parameters such as layer thicknesses, doping concentration, and aluminum composition. There is an excellent agreement between the analytical and numerical calculations. The charge control equations [Eqs. (7) and (1411 can be further used for calculating the gate source capacitance in each quantum well

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. I t , No. 1, January 1996

by simply differentiating the sheet charge densities with the gate bias in different regions of the device operation [3, 121. To test the validity of the model further, results of the analytical charge control calculations were also compared with measured data [l, 2, 7, 91 for different multiple-quantum-well structures. Table 1 shows a comparison between analytical and experimental results. Good agreement was again obtained with the experimental data. To assess the high-speed performance of HEMT, it is necessary t o characterize fully the gate capacitance of the device. Thus, one must know the exact location of the 2 DEG inside the quantum well, because it has strong influences on the gate capacitance. The average distance of the 2 DEG from the top heterointerface is shown in Figure 7 for different well widths. During the inverted HEMT mode of operation, average 2 DEG distance from the top heterointerface was calculated from Eq. (26) and Eq. (27) was used for average 2 DEG distance from the top heterointerface during normal HEMT mode of operation. Average distance from the top interface (during inverted HEMT mode) remains approximately constant, while average distance decreases at a much faster rate when both channels start to conduct. The analytical results (i.e., 2 DEG distance) of single-quantum-well structures (two channels) contradicts with the single-channel structures, where average distance decreases rapidly [15] with the increase of sheet charge density with the gate bias. The same trend, which is consisTABLE 1 Comparison of Analytical and Experimental Sheet Charge Densities
No. of Quantum Temperature nrT (ern-') nST Wells (K) Measured Calculated

tent with our analytical results for the average 2 DEG distance, has been demonstrated previously [101 by numerical calculations based on self-consistent solutions. The results show that the average distance strongly depends upon the well width. The smaller average distance is required for larger gate capacitance, and wider wells give poor gate capacitance; however, a greater two-dimensional spread of electron gas inside the quantum well enhances the carrier mobility. Thus, one must use an optimum well width (d, 20-30 nm) for high-speed operation of the device [lo].

4. CONCLUSION

In conclusion, we have developed a simple analytical charge control model for GaAs/AlGaAs-based multiple quantum wells HEMT. The results of this model arc in excellent agreement with numerical calculations based on the selfconsistent solution of the Poisson and Schrodinger equations and experimental data. Furthermore, simple analytical expressions were developed for the location of sheet charge density inside the GaAs quantum well. This model provides a valuable tool for the design, optimization, and performance prediction of microwave power devices.
REFERENCES 1. N. H. Sheng, C. P. Lee, R. T. Chen, D. L. Miller, and S. J. Lee, Multiple Channel GaAs/AlGaAs High Electron Mobility Transistors, ZEEE Electron Dezice Lett., Vol. EDL-6, June 1985, pp. 307-310. 2. II. Daembkes and G. Weimann, Multiple Quantum Well AlGaAs/GaAs Field Effect Transistor Structures for Power AppliLett., Vol. 52, No. 17, 1988, pp. 1404-1406. cations, Appl. Phy~. 3. J. L. Cazaux, G. Ng, D. Pavlidis, and H. Chau, An Analytical Approach to the Capacitance Voltage Characteristics of Double Heterojunction HEMT, IEEE Zrans. Electron Devices, Vol. ED35, NO. 8, 1988, pp. 1223-1231. 4. K. Hikosaka, Y.Hirachi, and M. Abe, Microwave Power Double Heterojunction HEMTs, ZEEE Trans. Electron. Deuices, Vol. 33, No. 9, 1986, pp. 583-589. 5. K. Inoue, H. Sakaki, J. Yoshino, and T. Hotta, Self-Consistent Calculation of Electronic States in AlGaAs Selectively Doped Double Heterojunction Systems under Electric Fields, J. Appl. Phys., Vol. 58, NO. 11, 1984, pp. 4277-4281. 6. K. Lee, M. Shur, T. Drummond, and H. Morkoc, Electron Density of the Two Dimensional Electron Gas in Modulation Doped Layers, J. Appl. Phys., Vol. 54, No. 4,1983, pp. 2093-2096. 7. E. Sovero, A. K. Gupta, J . A. Higgins, and W. A. Hill, 35-GHz Performance of Single and Quadruple Power Heterojunction HEMTs, IEEE Trans. Electron Devices, ED-33, 1986, pp. 1434-1437. 8. D. C. Yu and M. Ibrahim, An Analytical Model for CurrentVoltage Characteristics of Quantum Well Heterojunction Field Effect Transistors, Solid-StateElectron., Vol. 34, No. 5, 1991, pp. 467-479. 9. K. Hiko?aka, N. Hidaka, Y. Hirachi, and M. Abe, A 30 GHz I-W Power HEMT, ZEEE Electron Deuice Lett., Vol. EDL-8, NO. 11, 1987, pp. 521-523. 10. M. Tomizawa, T. Furuta, K. Yokoyama, and A. Yoshii, Modeling for Electron Transport in AlGaAs/GaAs/AlGaAs Double Heterojunction Structures, ZEEE Trans. Electron Devices., Vol. EDL-36, NO. 11, 1989, p. 2380. 11. T. Hager, W. Klein, R. Kempter, G. B @ h ,G. Trankle, and G. Weimann, GaAs/AlGaAs HEMT Structures with Multiquantum Well Channels, Electron. Lett., Vol. 27, No. 12, June 1991, pp. 1035-1037. 12. M. J. Molony, F. Ponse, and H. Morkoc, Gate CapacitanceVoltage Characteristics of MODFETs: Its Effect on Transconductance, ZEEE Trans. Electron Devices, Vol. ED-32, No. 9, 1985, pp. 1675-1784.

Reference Daembkes and Weimann [2] Sovero, Gupta, Higgins, and Hill [7] Sheng et al. [l] Hikosaka, Hidaka, Hirachi, and Abe (91

300 77

3.8 x 10l2 4.32 x 10 3.6 X 10 4.35 X 10

2 3

300 77

3.2 x lo1* 3.9 x lo1* 5.33 X 10l2 6.17 X 10l2

77

5.2 X lo* 5.981 X 101*

400

. . . .

. . . . .
dw3400 A

. .

. . . . .T=300K
Ed--H)mcV

. .

oe+o

le+12

2e+12

Sheet charge density (cm-2)

Figure 7 Average distance of the 2 DEG from the top heterointerface for different well widths

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 11, No. 1, January 1996

13. S . Kola, J. Golio, and G. Maracas, An Analytical Expression for Fermi Level versus Sheet Charge Concentration from HEMT Modeling, ZEEE Electron Device Lett., Vol. EDL-9, 1988, pp. 136-138. 14. W. A. Hughes and C. M. Snowden, Nonlinear Charge Control in AIGaAs/GaAs Modulation Doped FETs, ZEEE Trans. Electron Devices, Vol. ED-34, No. 8, 1987, pp. 1617-1625. 15. A. Shey and H. K. Walter, On the Charge Control of the Two-Dimensional Electron Gas for Analytic Modeling of HEMTs, ZEEE Electron Deuice. Len., Vol. ED-9, No. 12, 1988, pp. 624-626. 16. D. Delagebeaudeuf and N. Linh, Metal-(n) AlGaAs-GaAs Two Dimensional Electron Gas FET, ZEEE Trans. Electron Devices, Vol. ED-29, NO. 6, 1982, pp. 955-960.
Received 8-31-95

Microwave and Optical Technology Letters, 11/1, 1-8 0 1996 John Wiley & Sons, Inc. CCC 0895-2477/96

PERFORMANCE OF RING PATCH ANTENNAS WITH GLASS SUPERSTRATES

L. Economou and R. J. Langley
Electronic Engineering Laboratory University of Kent at Canterbury Canterbury, Kent CT2 7NT, United Kingdom
KEY TERMS Microstrip patch antennag spectral-domain analysis, mobile antennas

the fundamental TM,, mode and the higher-order TM,, mode the radiation pattern of which is conical. The antennas have application on vehicles for satellite communications [2]. They were analyzed and designed using a spectral-domain moment method, and theoretical results are compared with experiment for both modes. The analysis includes the option of superstrates such as a laminated windscreen and a resistive layer as per [l]. Neither higher-order mode analysis results nor results regarding attachment to glass have previously been reported in the literature. The Letter concentrates on the bandwidth changes brought about by the glass and a lossy area. The annular rings were printed on Taconic substrates 0.787 mm thick with relative permittivity er = 2.17 and loss tangent t n S = O.OOO9. They were probe fed and had inner a and outer radii of 5 and 25 mm, respectively. Figure 1 shows the basic antenna/windscreen geometry. The adhesive layer between the patch and screen was assumed to have a similar permittivity to the substrate. The glass laminates were 2.5 mm thick with cr = 6.3 and tan 6 = 0.009, separated by a plastic layer 0.7 mm thick. These parameters are an approximate average for the glass, as they will depend on the chemical constituents, which are notoriously variable from batch to batch.
2. ANALYSIS

There have been several articles published on the analysis of patches using a spectral-domain approach [3, 41. For brevity we shall not repeat the basic method here. However, the current basis functions chosen for the higher-order modes were chosen to be the TM current modes of a magnetic wall annular ring cavity of inner radius a and outer radius b:

ABSTRACT This Letter discusses an experimental study and Hankel-domain analysis of annular ring patch antennas attached to a laminated glass vehicle windscreen. The fundamental TM,, and higher-onler TM2, modes are studied, the latter being of interest for mobile satellite communications. Attaching the antenna to the screen brings about a doubling in the bandwidth, and adding a resistiue ring on top of the screen further improves the bandwidth. 0 I996 John Wiley & Sons, Znc.
1. INTRODUCTION

where k,, is the solution of

Basis functions for all modes up to the ( n + 1) mode were included in the computations to achieve convergence of the solution.
3. INPUT IMPEDANCE

There is currently significant interest in patch antennas for use on vehicles for mobile communications and global positioning systems (GPS). The question of where to place the antennas often gives problems, but one possibility is to affix them to or etch them onto the glass areas of the vehicle, either the windscreen, the side or rear windows, or the sunroof. The antennas are then less conspicuous and more secure. Little has been published on the performance of patch antennas attached to glass. Lowes et al. [l]have shown experimentally that rectangular patches printed onto a windscreen with a printed resistive layer to reduce surface waves resulted in a bandwidth improvement from 2% to 20%, the increase in bandwidth being attributable to the glass superstrate alone and not the lossy layer. In this letter we report on an experimental and theoretical study of annular ring patch antennas that are fixed to glass areas with adhesive rather than directly printed to the glass. This is more economical in the long run, because should the glass be broken the antenna is merely reafhed, as an interior rearview mirror would be. The patches were operated both in

Figure 2 shows the real and imaginary parts of the input impedance 2, for the annular rings of Figure 1. These results include theoretical and experimental results for the patches without a cover [Figure 2(a)], and when attached to the laminated windscreen [Figure 2(b)], for each mode of resonance. In Figure 2(a) the TM,, mode resonated at 2.25 GHz, and the TM,, mode at 3.86 GHz. There is very good agreement between the calculated and measured results for both parts of the input impedance. The patch was fixed to the windscreen and the measurements repeated as in Figure 2(b). The TM,, mode resonance moved down to 2.05 GHz from 2.25 GHz with a subsequent reduction in the both components of Zin,the resistance changing from 135 s2 to about 90 s2, making the mode far easier to match. For the higher-order mode the resonant frequency decreased from 3.86 to 3.45 GHz, with the resistance falling from about 25 to only 7 a. The poor match now obtained for the TM,, mode can be improved by relocating the feed point, as shown in Figure 3.

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 11, No. 1, January 1996